JP2009536791A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009536791A5 JP2009536791A5 JP2009510032A JP2009510032A JP2009536791A5 JP 2009536791 A5 JP2009536791 A5 JP 2009536791A5 JP 2009510032 A JP2009510032 A JP 2009510032A JP 2009510032 A JP2009510032 A JP 2009510032A JP 2009536791 A5 JP2009536791 A5 JP 2009536791A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductive layer
- dielectric
- dielectric layer
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 26
- 239000000463 material Substances 0.000 claims 19
- 238000000151 deposition Methods 0.000 claims 17
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 15
- 229910052707 ruthenium Inorganic materials 0.000 claims 15
- 239000003990 capacitor Substances 0.000 claims 14
- 229910052735 hafnium Inorganic materials 0.000 claims 13
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 13
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 12
- 229910006249 ZrSi Inorganic materials 0.000 claims 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 9
- 125000006850 spacer group Chemical group 0.000 claims 9
- 238000004377 microelectronic Methods 0.000 claims 7
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 6
- 239000011651 chromium Substances 0.000 claims 6
- 239000010955 niobium Substances 0.000 claims 6
- PXXKQOPKNFECSZ-UHFFFAOYSA-N platinum rhodium Chemical compound [Rh].[Pt] PXXKQOPKNFECSZ-UHFFFAOYSA-N 0.000 claims 6
- 239000010936 titanium Substances 0.000 claims 6
- 229910052726 zirconium Inorganic materials 0.000 claims 6
- 229910052721 tungsten Inorganic materials 0.000 claims 5
- 239000010937 tungsten Substances 0.000 claims 5
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 3
- 229910052804 chromium Inorganic materials 0.000 claims 3
- 229910052741 iridium Inorganic materials 0.000 claims 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 3
- 229910052750 molybdenum Inorganic materials 0.000 claims 3
- 239000011733 molybdenum Substances 0.000 claims 3
- 229910052758 niobium Inorganic materials 0.000 claims 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 3
- 150000004767 nitrides Chemical class 0.000 claims 3
- HWLDNSXPUQTBOD-UHFFFAOYSA-N platinum-iridium alloy Chemical compound [Ir].[Pt] HWLDNSXPUQTBOD-UHFFFAOYSA-N 0.000 claims 3
- 229910052702 rhenium Inorganic materials 0.000 claims 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 3
- CGFYHILWFSGVJS-UHFFFAOYSA-N silicic acid;trioxotungsten Chemical compound O[Si](O)(O)O.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1.O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 CGFYHILWFSGVJS-UHFFFAOYSA-N 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- 229910052715 tantalum Inorganic materials 0.000 claims 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 3
- 229910052719 titanium Inorganic materials 0.000 claims 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 3
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims 3
- 239000002253 acid Substances 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 2
- 150000001247 metal acetylides Chemical class 0.000 claims 2
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 2
- 229910001260 Pt alloy Inorganic materials 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910007880 ZrAl Inorganic materials 0.000 claims 1
- MIQVEZFSDIJTMW-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O-2].[Al+3].[Hf+4] MIQVEZFSDIJTMW-UHFFFAOYSA-N 0.000 claims 1
- HVXCTUSYKCFNMG-UHFFFAOYSA-N aluminum oxygen(2-) zirconium(4+) Chemical compound [O-2].[Zr+4].[Al+3] HVXCTUSYKCFNMG-UHFFFAOYSA-N 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- -1 tungsten nitride Chemical class 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/431,958 | 2006-05-10 | ||
| US11/431,958 US7560392B2 (en) | 2006-05-10 | 2006-05-10 | Electrical components for microelectronic devices and methods of forming the same |
| PCT/US2007/067942 WO2007133936A1 (en) | 2006-05-10 | 2007-05-01 | Electrical components for microelectronic devices and methods of forming the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009536791A JP2009536791A (ja) | 2009-10-15 |
| JP2009536791A5 true JP2009536791A5 (enExample) | 2009-12-17 |
| JP5163965B2 JP5163965B2 (ja) | 2013-03-13 |
Family
ID=38542006
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009510032A Expired - Fee Related JP5163965B2 (ja) | 2006-05-10 | 2007-05-01 | マイクロ電子工学装置のための電子部品、およびその製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US7560392B2 (enExample) |
| EP (1) | EP2016616A1 (enExample) |
| JP (1) | JP5163965B2 (enExample) |
| KR (1) | KR101127741B1 (enExample) |
| CN (1) | CN101461037B (enExample) |
| TW (1) | TWI365513B (enExample) |
| WO (1) | WO2007133936A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7807582B2 (en) * | 2006-03-06 | 2010-10-05 | Micron Technology, Inc. | Method of forming contacts for a memory device |
| US7560392B2 (en) | 2006-05-10 | 2009-07-14 | Micron Technology, Inc. | Electrical components for microelectronic devices and methods of forming the same |
| KR100919712B1 (ko) * | 2007-06-27 | 2009-10-06 | 삼성전자주식회사 | 반도체 집적 회로 장치 및 그 제조 방법 |
| US8124528B2 (en) | 2008-04-10 | 2012-02-28 | Micron Technology, Inc. | Method for forming a ruthenium film |
| KR20100079293A (ko) * | 2008-12-31 | 2010-07-08 | 주식회사 동부하이텍 | 커패시터 및 그 제조 방법 |
| US9159551B2 (en) * | 2009-07-02 | 2015-10-13 | Micron Technology, Inc. | Methods of forming capacitors |
| JP2013021012A (ja) | 2011-07-07 | 2013-01-31 | Renesas Electronics Corp | 半導体装置の製造方法 |
| US9466660B2 (en) * | 2013-10-16 | 2016-10-11 | Micron Technology, Inc. | Semiconductor structures including molybdenum nitride, molybdenum oxynitride or molybdenum-based alloy material, and method of making such structures |
| US10553673B2 (en) * | 2017-12-27 | 2020-02-04 | Micron Technology, Inc. | Methods used in forming at least a portion of at least one conductive capacitor electrode of a capacitor that comprises a pair of conductive capacitor electrodes having a capacitor insulator there-between and methods of forming a capacitor |
| JP7228849B2 (ja) | 2018-04-04 | 2023-02-27 | パナソニックＩｐマネジメント株式会社 | 電子デバイス及びその製造方法 |
| CN113299651B (zh) | 2020-02-24 | 2023-06-16 | 长鑫存储技术有限公司 | 半导体结构制备方法和半导体结构 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0218895A (ja) * | 1988-07-04 | 1990-01-23 | Murata Mfg Co Ltd | 薄膜ｅｌ素子 |
| JP2645811B2 (ja) * | 1995-03-20 | 1997-08-25 | エルジイ・セミコン・カンパニイ・リミテッド | 拡散バリヤ機能を有する半導体素子の電極形成方法 |
| US5668040A (en) | 1995-03-20 | 1997-09-16 | Lg Semicon Co., Ltd. | Method for forming a semiconductor device electrode which also serves as a diffusion barrier |
| JP3512959B2 (ja) * | 1996-11-14 | 2004-03-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JPH11274419A (ja) * | 1998-03-26 | 1999-10-08 | Toshiba Corp | 薄膜キャパシタ |
| KR100290895B1 (ko) | 1998-06-30 | 2001-07-12 | 김영환 | 반도체 소자의 커패시터 구조 및 이의 제조 방법 |
| JP3768357B2 (ja) * | 1998-12-01 | 2006-04-19 | 富士通株式会社 | 高誘電体キャパシタの製造方法 |
| US6475854B2 (en) * | 1999-12-30 | 2002-11-05 | Applied Materials, Inc. | Method of forming metal electrodes |
| JP3851752B2 (ja) * | 2000-03-27 | 2006-11-29 | 株式会社東芝 | 半導体装置の製造方法 |
| US6492241B1 (en) * | 2000-04-10 | 2002-12-10 | Micron Technology, Inc. | Integrated capacitors fabricated with conductive metal oxides |
| US20020036313A1 (en) | 2000-06-06 | 2002-03-28 | Sam Yang | Memory cell capacitor structure and method of formation |
| US6440495B1 (en) * | 2000-08-03 | 2002-08-27 | Applied Materials, Inc. | Chemical vapor deposition of ruthenium films for metal electrode applications |
| JP3624822B2 (ja) * | 2000-11-22 | 2005-03-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| JP2002313951A (ja) * | 2001-04-11 | 2002-10-25 | Hitachi Ltd | 半導体集積回路装置及びその製造方法 |
| JP2003168749A (ja) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | 不揮発性半導体記憶装置及びその製造方法 |
| US6787831B2 (en) * | 2002-01-15 | 2004-09-07 | Infineon Technologies Aktiengesellschaft | Barrier stack with improved barrier properties |
| US7335552B2 (en) | 2002-05-15 | 2008-02-26 | Raytheon Company | Electrode for thin film capacitor devices |
| CN1519916A (zh) * | 2003-01-20 | 2004-08-11 | �����ɷ� | 制作dram的存储单元的方法 |
| JP4360467B2 (ja) * | 2003-11-20 | 2009-11-11 | 独立行政法人科学技術振興機構 | 強誘電体メソ結晶担持薄膜及びその製造方法 |
| JP2005209712A (ja) * | 2004-01-20 | 2005-08-04 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法および基板処理装置 |
| KR100614803B1 (ko) | 2004-10-26 | 2006-08-22 | 삼성전자주식회사 | 커패시터 제조 방법 |
| KR100653721B1 (ko) * | 2005-06-30 | 2006-12-05 | 삼성전자주식회사 | 질소주입활성영역을 갖는 반도체소자 및 그 제조방법 |
| KR100728959B1 (ko) * | 2005-08-18 | 2007-06-15 | 주식회사 하이닉스반도체 | 반도체 소자의 캐패시터 형성방법 |
| US7560392B2 (en) * | 2006-05-10 | 2009-07-14 | Micron Technology, Inc. | Electrical components for microelectronic devices and methods of forming the same |
-
2006
- 2006-05-10 US US11/431,958 patent/US7560392B2/en active Active
-
2007
- 2007-05-01 KR KR1020087030111A patent/KR101127741B1/ko active Active
- 2007-05-01 CN CN2007800210506A patent/CN101461037B/zh active Active
- 2007-05-01 WO PCT/US2007/067942 patent/WO2007133936A1/en not_active Ceased
- 2007-05-01 EP EP07761689A patent/EP2016616A1/en not_active Withdrawn
- 2007-05-01 JP JP2009510032A patent/JP5163965B2/ja not_active Expired - Fee Related
- 2007-05-09 TW TW096116503A patent/TWI365513B/zh active
-
2009
- 2009-07-14 US US12/502,630 patent/US7968969B2/en active Active
-
2011
- 2011-06-28 US US13/171,320 patent/US8450173B2/en not_active Expired - Fee Related
-
2013
- 2013-05-28 US US13/903,364 patent/US8987863B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2009536791A5 (enExample) | ||
| JP5163965B2 (ja) | マイクロ電子工学装置のための電子部品、およびその製造方法 | |
| JP2006128680A5 (enExample) | ||
| US20100255217A1 (en) | Method for forming a capacitor dielectric and method for manufacturing capacitor using the capacitor dielectric | |
| JP2005333148A5 (enExample) | ||
| JPH08236708A (ja) | 高融点金属上のアルミニウムからなる薄膜多層酸素拡散バリア | |
| US20220336493A1 (en) | Semiconductor device and method of manufacturing the same | |
| JP2008530820A5 (enExample) | ||
| WO2014007603A2 (en) | A method of fabricating a gas sensor | |
| WO2011002603A2 (en) | Methods of forming capacitors | |
| JP2009158485A5 (enExample) | ||
| TW440937B (en) | Iridium conductive electrode/barrier structure and method for same | |
| US20100133654A1 (en) | Method for manufacturing capacitor of semiconductor | |
| JPWO2019142080A5 (enExample) | ||
| JP2002076293A (ja) | キャパシタ及び半導体装置の製造方法 | |
| JP2003060081A5 (enExample) | ||
| JP2002248777A5 (enExample) | ||
| JP2010153487A5 (enExample) | ||
| JPS584975A (ja) | 半導体装置の製造方法 | |
| JP2000040824A (ja) | 半導体装置 | |
| TW511247B (en) | Manufacturing method for a memory condenser containing a dielectric on the basis of strontium-bismuth-tantalum | |
| JP2005167226A5 (enExample) | ||
| JP2005159331A5 (enExample) | ||
| Yamagata et al. | Evaluation of electrical characteristics of the layer-by-layer self-assembled films after the various annealing temperatures | |
| CN104752606B (zh) | 电阻式存储器的形成方法 |