JP2003060081A5 - - Google Patents

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Publication number
JP2003060081A5
JP2003060081A5 JP2001241792A JP2001241792A JP2003060081A5 JP 2003060081 A5 JP2003060081 A5 JP 2003060081A5 JP 2001241792 A JP2001241792 A JP 2001241792A JP 2001241792 A JP2001241792 A JP 2001241792A JP 2003060081 A5 JP2003060081 A5 JP 2003060081A5
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JP
Japan
Prior art keywords
forming
film
metal
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001241792A
Other languages
English (en)
Japanese (ja)
Other versions
JP4065670B2 (ja
JP2003060081A (ja
Filing date
Publication date
Priority claimed from JP2001241792A external-priority patent/JP4065670B2/ja
Priority to JP2001241792A priority Critical patent/JP4065670B2/ja
Application filed filed Critical
Priority to TW91111707A priority patent/TW573353B/zh
Priority to US10/208,780 priority patent/US6734086B2/en
Priority to KR1020020046498A priority patent/KR100878384B1/ko
Publication of JP2003060081A publication Critical patent/JP2003060081A/ja
Priority to US10/778,075 priority patent/US20040161891A1/en
Publication of JP2003060081A5 publication Critical patent/JP2003060081A5/ja
Publication of JP4065670B2 publication Critical patent/JP4065670B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2001241792A 2001-08-09 2001-08-09 半導体集積回路装置の製造方法 Expired - Fee Related JP4065670B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001241792A JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法
TW91111707A TW573353B (en) 2001-08-09 2002-05-31 Semiconductor integrated circuit device and method of manufacturing the same
US10/208,780 US6734086B2 (en) 2001-08-09 2002-08-01 Semiconductor integrated circuit device and method of manufacturing the same
KR1020020046498A KR100878384B1 (ko) 2001-08-09 2002-08-07 반도체 집적 회로 장치의 제조 방법
US10/778,075 US20040161891A1 (en) 2001-08-09 2004-02-17 Semiconductor integrated circuit device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001241792A JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003060081A JP2003060081A (ja) 2003-02-28
JP2003060081A5 true JP2003060081A5 (enExample) 2005-05-26
JP4065670B2 JP4065670B2 (ja) 2008-03-26

Family

ID=19072167

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001241792A Expired - Fee Related JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6734086B2 (enExample)
JP (1) JP4065670B2 (enExample)
KR (1) KR100878384B1 (enExample)
TW (1) TW573353B (enExample)

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Publication number Priority date Publication date Assignee Title
KR100438782B1 (ko) * 2001-12-29 2004-07-05 삼성전자주식회사 반도체 소자의 실린더형 커패시터 제조방법
KR100688493B1 (ko) * 2003-06-17 2007-03-02 삼성전자주식회사 폴리실리콘 콘택 플러그를 갖는 금속-절연막-금속캐패시터 및 그 제조방법
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication
CN100377357C (zh) * 2003-10-22 2008-03-26 松下电器产业株式会社 半导体装置及其制造方法
KR100738068B1 (ko) * 2004-08-20 2007-07-12 삼성전자주식회사 산화 환원 반응을 이용한 귀금속 전극 형성 방법
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
KR100652795B1 (ko) * 2005-06-30 2006-12-01 주식회사 하이닉스반도체 질소성분이 함유된 금속막하드마스크를 이용한반도체소자의 스토리지노드콘택 형성 방법
JP2007324350A (ja) * 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US9281275B2 (en) * 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall

Family Cites Families (23)

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Publication number Priority date Publication date Assignee Title
US146902A (en) * 1874-01-27 Improvement in filtering-points for well-tubes
US102826A (en) * 1870-05-10 Improved drawer tor furniture
US3722A (en) * 1844-08-31 Henry bttkt
US181644A (en) * 1876-08-29 Improvement in sirup-pans
US7793A (en) * 1850-11-26 And chas
US31403A (en) * 1861-02-12 Satjsage-sttjffer
US5130080A (en) * 1990-04-02 1992-07-14 General Electric Company Method of providing extended life expectancy for components of boiling water reactors
JPH06236879A (ja) * 1993-02-09 1994-08-23 Kawasaki Steel Corp 半導体集積回路装置の配線の形成方法
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
JP3488007B2 (ja) 1996-03-05 2004-01-19 富士通株式会社 薄膜形成方法、半導体装置及びその製造方法
JP3130757B2 (ja) * 1995-03-27 2001-01-31 富士通株式会社 キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法
FR2746934B1 (fr) * 1996-03-27 1998-05-07 Saint Gobain Vitrage Dispositif electrochimique
US6714618B1 (en) * 1997-11-28 2004-03-30 General Electric Company Temperature-based method for controlling the amount of metal applied to metal oxide surfaces to reduce corrosion and stress corrosion cracking
JP3905977B2 (ja) * 1998-05-22 2007-04-18 株式会社東芝 半導体装置の製造方法
US6074945A (en) * 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6133161A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6127192A (en) * 1998-08-27 2000-10-03 Micron Technology, Inc. Complexes having tris (pyrazolyl) borate ligands for forming films
US6225237B1 (en) * 1998-09-01 2001-05-01 Micron Technology, Inc. Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
JP3976462B2 (ja) * 2000-01-26 2007-09-19 エルピーダメモリ株式会社 半導体装置の製造方法
JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法

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