JP4065670B2 - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法 Download PDF

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Publication number
JP4065670B2
JP4065670B2 JP2001241792A JP2001241792A JP4065670B2 JP 4065670 B2 JP4065670 B2 JP 4065670B2 JP 2001241792 A JP2001241792 A JP 2001241792A JP 2001241792 A JP2001241792 A JP 2001241792A JP 4065670 B2 JP4065670 B2 JP 4065670B2
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Japan
Prior art keywords
film
forming
metal
integrated circuit
circuit device
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Expired - Fee Related
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JP2001241792A
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English (en)
Japanese (ja)
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JP2003060081A5 (enExample
JP2003060081A (ja
Inventor
正恭 鈴樹
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Renesas Technology Corp
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Renesas Technology Corp
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Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2001241792A priority Critical patent/JP4065670B2/ja
Priority to TW91111707A priority patent/TW573353B/zh
Priority to US10/208,780 priority patent/US6734086B2/en
Priority to KR1020020046498A priority patent/KR100878384B1/ko
Publication of JP2003060081A publication Critical patent/JP2003060081A/ja
Priority to US10/778,075 priority patent/US20040161891A1/en
Publication of JP2003060081A5 publication Critical patent/JP2003060081A5/ja
Application granted granted Critical
Publication of JP4065670B2 publication Critical patent/JP4065670B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
JP2001241792A 2001-08-09 2001-08-09 半導体集積回路装置の製造方法 Expired - Fee Related JP4065670B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2001241792A JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法
TW91111707A TW573353B (en) 2001-08-09 2002-05-31 Semiconductor integrated circuit device and method of manufacturing the same
US10/208,780 US6734086B2 (en) 2001-08-09 2002-08-01 Semiconductor integrated circuit device and method of manufacturing the same
KR1020020046498A KR100878384B1 (ko) 2001-08-09 2002-08-07 반도체 집적 회로 장치의 제조 방법
US10/778,075 US20040161891A1 (en) 2001-08-09 2004-02-17 Semiconductor integrated circuit device and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001241792A JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Publications (3)

Publication Number Publication Date
JP2003060081A JP2003060081A (ja) 2003-02-28
JP2003060081A5 JP2003060081A5 (enExample) 2005-05-26
JP4065670B2 true JP4065670B2 (ja) 2008-03-26

Family

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Family Applications (1)

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JP2001241792A Expired - Fee Related JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法

Country Status (4)

Country Link
US (2) US6734086B2 (enExample)
JP (1) JP4065670B2 (enExample)
KR (1) KR100878384B1 (enExample)
TW (1) TW573353B (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438782B1 (ko) * 2001-12-29 2004-07-05 삼성전자주식회사 반도체 소자의 실린더형 커패시터 제조방법
KR100688493B1 (ko) * 2003-06-17 2007-03-02 삼성전자주식회사 폴리실리콘 콘택 플러그를 갖는 금속-절연막-금속캐패시터 및 그 제조방법
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication
CN100377357C (zh) * 2003-10-22 2008-03-26 松下电器产业株式会社 半导体装置及其制造方法
KR100738068B1 (ko) * 2004-08-20 2007-07-12 삼성전자주식회사 산화 환원 반응을 이용한 귀금속 전극 형성 방법
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
KR100652795B1 (ko) * 2005-06-30 2006-12-01 주식회사 하이닉스반도체 질소성분이 함유된 금속막하드마스크를 이용한반도체소자의 스토리지노드콘택 형성 방법
JP2007324350A (ja) * 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US9281275B2 (en) * 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall

Family Cites Families (23)

* Cited by examiner, † Cited by third party
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US146902A (en) * 1874-01-27 Improvement in filtering-points for well-tubes
US102826A (en) * 1870-05-10 Improved drawer tor furniture
US3722A (en) * 1844-08-31 Henry bttkt
US181644A (en) * 1876-08-29 Improvement in sirup-pans
US7793A (en) * 1850-11-26 And chas
US31403A (en) * 1861-02-12 Satjsage-sttjffer
US5130080A (en) * 1990-04-02 1992-07-14 General Electric Company Method of providing extended life expectancy for components of boiling water reactors
JPH06236879A (ja) * 1993-02-09 1994-08-23 Kawasaki Steel Corp 半導体集積回路装置の配線の形成方法
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
JP3488007B2 (ja) 1996-03-05 2004-01-19 富士通株式会社 薄膜形成方法、半導体装置及びその製造方法
JP3130757B2 (ja) * 1995-03-27 2001-01-31 富士通株式会社 キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法
FR2746934B1 (fr) * 1996-03-27 1998-05-07 Saint Gobain Vitrage Dispositif electrochimique
US6714618B1 (en) * 1997-11-28 2004-03-30 General Electric Company Temperature-based method for controlling the amount of metal applied to metal oxide surfaces to reduce corrosion and stress corrosion cracking
JP3905977B2 (ja) * 1998-05-22 2007-04-18 株式会社東芝 半導体装置の製造方法
US6074945A (en) * 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6133161A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
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JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法

Also Published As

Publication number Publication date
US20040161891A1 (en) 2004-08-19
TW573353B (en) 2004-01-21
US20030032234A1 (en) 2003-02-13
US6734086B2 (en) 2004-05-11
JP2003060081A (ja) 2003-02-28
KR100878384B1 (ko) 2009-01-13
KR20030014612A (ko) 2003-02-19

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