KR100878384B1 - 반도체 집적 회로 장치의 제조 방법 - Google Patents

반도체 집적 회로 장치의 제조 방법 Download PDF

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Publication number
KR100878384B1
KR100878384B1 KR1020020046498A KR20020046498A KR100878384B1 KR 100878384 B1 KR100878384 B1 KR 100878384B1 KR 1020020046498 A KR1020020046498 A KR 1020020046498A KR 20020046498 A KR20020046498 A KR 20020046498A KR 100878384 B1 KR100878384 B1 KR 100878384B1
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South Korea
Prior art keywords
film
metal
forming
circuit device
integrated circuit
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Expired - Fee Related
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KR1020020046498A
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English (en)
Korean (ko)
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KR20030014612A (ko
Inventor
스즈끼마사유끼
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가부시키가이샤 히타치세이사쿠쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
KR1020020046498A 2001-08-09 2002-08-07 반도체 집적 회로 장치의 제조 방법 Expired - Fee Related KR100878384B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001241792A JP4065670B2 (ja) 2001-08-09 2001-08-09 半導体集積回路装置の製造方法
JPJP-P-2001-00241792 2001-08-09

Publications (2)

Publication Number Publication Date
KR20030014612A KR20030014612A (ko) 2003-02-19
KR100878384B1 true KR100878384B1 (ko) 2009-01-13

Family

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Family Applications (1)

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KR1020020046498A Expired - Fee Related KR100878384B1 (ko) 2001-08-09 2002-08-07 반도체 집적 회로 장치의 제조 방법

Country Status (4)

Country Link
US (2) US6734086B2 (enExample)
JP (1) JP4065670B2 (enExample)
KR (1) KR100878384B1 (enExample)
TW (1) TW573353B (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100438782B1 (ko) * 2001-12-29 2004-07-05 삼성전자주식회사 반도체 소자의 실린더형 커패시터 제조방법
KR100688493B1 (ko) * 2003-06-17 2007-03-02 삼성전자주식회사 폴리실리콘 콘택 플러그를 갖는 금속-절연막-금속캐패시터 및 그 제조방법
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication
CN100377357C (zh) * 2003-10-22 2008-03-26 松下电器产业株式会社 半导体装置及其制造方法
KR100738068B1 (ko) * 2004-08-20 2007-07-12 삼성전자주식회사 산화 환원 반응을 이용한 귀금속 전극 형성 방법
US7091542B1 (en) * 2005-01-28 2006-08-15 International Business Machines Corporation Method of forming a MIM capacitor for Cu BEOL application
KR100652795B1 (ko) * 2005-06-30 2006-12-01 주식회사 하이닉스반도체 질소성분이 함유된 금속막하드마스크를 이용한반도체소자의 스토리지노드콘택 형성 방법
JP2007324350A (ja) * 2006-05-31 2007-12-13 Tokyo Electron Ltd 熱処理方法および熱処理装置、ならびに基板処理装置
US20090130466A1 (en) * 2007-11-16 2009-05-21 Air Products And Chemicals, Inc. Deposition Of Metal Films On Diffusion Layers By Atomic Layer Deposition And Organometallic Precursor Complexes Therefor
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US9281275B2 (en) * 2014-05-15 2016-03-08 Texas Instruments Incorporated Bond pad having ruthenium directly on passivation sidewall

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06236879A (ja) * 1993-02-09 1994-08-23 Kawasaki Steel Corp 半導体集積回路装置の配線の形成方法
JPH11340435A (ja) * 1998-05-22 1999-12-10 Toshiba Corp 半導体装置の製造方法
JP3130757B2 (ja) * 1995-03-27 2001-01-31 富士通株式会社 キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法
JP2001210802A (ja) * 2000-01-26 2001-08-03 Hitachi Ltd 半導体装置及びその製造方法

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US146902A (en) * 1874-01-27 Improvement in filtering-points for well-tubes
US102826A (en) * 1870-05-10 Improved drawer tor furniture
US3722A (en) * 1844-08-31 Henry bttkt
US181644A (en) * 1876-08-29 Improvement in sirup-pans
US7793A (en) * 1850-11-26 And chas
US31403A (en) * 1861-02-12 Satjsage-sttjffer
US5130080A (en) * 1990-04-02 1992-07-14 General Electric Company Method of providing extended life expectancy for components of boiling water reactors
US5874364A (en) * 1995-03-27 1999-02-23 Fujitsu Limited Thin film deposition method, capacitor device and method for fabricating the same, and semiconductor device and method for fabricating the same
JP3488007B2 (ja) 1996-03-05 2004-01-19 富士通株式会社 薄膜形成方法、半導体装置及びその製造方法
FR2746934B1 (fr) * 1996-03-27 1998-05-07 Saint Gobain Vitrage Dispositif electrochimique
US6714618B1 (en) * 1997-11-28 2004-03-30 General Electric Company Temperature-based method for controlling the amount of metal applied to metal oxide surfaces to reduce corrosion and stress corrosion cracking
US6074945A (en) * 1998-08-27 2000-06-13 Micron Technology, Inc. Methods for preparing ruthenium metal films
US6133161A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods of forming a film on a substrate using complexes having tris(pyrazolyl) methanate ligands
US6133159A (en) * 1998-08-27 2000-10-17 Micron Technology, Inc. Methods for preparing ruthenium oxide films
US6127192A (en) * 1998-08-27 2000-10-03 Micron Technology, Inc. Complexes having tris (pyrazolyl) borate ligands for forming films
US6225237B1 (en) * 1998-09-01 2001-05-01 Micron Technology, Inc. Method for forming metal-containing films using metal complexes with chelating O- and/or N-donor ligands
US6239028B1 (en) * 1998-09-03 2001-05-29 Micron Technology, Inc. Methods for forming iridium-containing films on substrates
US6303809B1 (en) * 1999-12-10 2001-10-16 Yun Chi Organometallic ruthenium and osmium source reagents for chemical vapor deposition
JP2002231656A (ja) * 2001-01-31 2002-08-16 Hitachi Ltd 半導体集積回路装置の製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06236879A (ja) * 1993-02-09 1994-08-23 Kawasaki Steel Corp 半導体集積回路装置の配線の形成方法
JP3130757B2 (ja) * 1995-03-27 2001-01-31 富士通株式会社 キャパシタ電極用薄膜の形成方法、半導体装置及びその製造方法
JPH11340435A (ja) * 1998-05-22 1999-12-10 Toshiba Corp 半導体装置の製造方法
JP2001210802A (ja) * 2000-01-26 2001-08-03 Hitachi Ltd 半導体装置及びその製造方法

Also Published As

Publication number Publication date
US20040161891A1 (en) 2004-08-19
JP4065670B2 (ja) 2008-03-26
TW573353B (en) 2004-01-21
US20030032234A1 (en) 2003-02-13
US6734086B2 (en) 2004-05-11
JP2003060081A (ja) 2003-02-28
KR20030014612A (ko) 2003-02-19

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