JP2009511717A - ポリイミドおよび疎水性エポキシを含む組成物、ならびにそれに関する方法 - Google Patents

ポリイミドおよび疎水性エポキシを含む組成物、ならびにそれに関する方法 Download PDF

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Publication number
JP2009511717A
JP2009511717A JP2008535675A JP2008535675A JP2009511717A JP 2009511717 A JP2009511717 A JP 2009511717A JP 2008535675 A JP2008535675 A JP 2008535675A JP 2008535675 A JP2008535675 A JP 2008535675A JP 2009511717 A JP2009511717 A JP 2009511717A
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composition
polyimide
bis
composition according
ptf
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English (en)
Japanese (ja)
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JP2009511717A5 (zh
Inventor
イー．デューバー トーマス
ディー．サマーズ ジョン
シー．アウマン ブライアン
エー．サブラマニアン ムニールパッラム
エス．ロガド ニリッサ
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EIDP Inc
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EI Du Pont de Nemours and Co
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Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2009511717A publication Critical patent/JP2009511717A/ja
Publication of JP2009511717A5 publication Critical patent/JP2009511717A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0387—Polyamides or polyimides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00—Polymer mixtures characterised by other features
    • C08L2205/02—Polymer mixtures characterised by other features containing two or more polymers of the same C08L -group
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0154—Polyimide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31511—Of epoxy ether
    • Y10T428/31515—As intermediate layer
    • Y10T428/31522—Next to metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Dispersion Chemistry (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2008535675A 2005-10-12 2006-10-12 ポリイミドおよび疎水性エポキシを含む組成物、ならびにそれに関する方法 Withdrawn JP2009511717A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/248,803 US7745516B2 (en) 2005-10-12 2005-10-12 Composition of polyimide and sterically-hindered hydrophobic epoxy
PCT/US2006/039912 WO2007047384A1 (en) 2005-10-12 2006-10-12 Compositions comprising polyimide and hydrophobic epoxy, and methods relating thereto

Publications (2)

Publication Number Publication Date
JP2009511717A true JP2009511717A (ja) 2009-03-19
JP2009511717A5 JP2009511717A5 (zh) 2009-09-24

Family

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JP2008535675A Withdrawn JP2009511717A (ja) 2005-10-12 2006-10-12 ポリイミドおよび疎水性エポキシを含む組成物、ならびにそれに関する方法

Country Status (6)

Country Link
US (2) US7745516B2 (zh)
EP (1) EP1943311A1 (zh)
JP (1) JP2009511717A (zh)
KR (1) KR20080066033A (zh)
CN (1) CN101283048A (zh)
WO (1) WO2007047384A1 (zh)

Cited By (8)

* Cited by examiner, † Cited by third party
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JP2010053223A (ja) * 2008-08-27 2010-03-11 Shin-Etsu Chemical Co Ltd 無溶剤型ポリイミドシリコーン系樹脂組成物及びその硬化物
WO2013122062A1 (ja) * 2012-02-13 2013-08-22 日産化学工業株式会社 液晶配向剤、液晶配向膜および液晶表示素子
WO2014157625A1 (ja) * 2013-03-29 2014-10-02 日産化学工業株式会社 ブロック化されたイソシアネート基を有する重合体を含有する液晶配向剤、液晶配向膜、及び液晶表示素子
JP2017510978A (ja) * 2014-02-07 2017-04-13 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーＥ．Ｉ．Ｄｕ Ｐｏｎｔ Ｄｅ Ｎｅｍｏｕｒｓ Ａｎｄ Ｃｏｍｐａｎｙ 熱伝導性電子基板およびそれに関連する方法
JP2018182199A (ja) * 2017-04-19 2018-11-15 三井化学株式会社 半導体用膜形成用組成物、半導体用膜形成用組成物の製造方法、半導体用部材の製造方法、及び半導体用工程材の製造方法
WO2019150994A1 (ja) * 2018-02-01 2019-08-08 三井金属鉱業株式会社 樹脂組成物、樹脂付銅箔、誘電体層、銅張積層板、キャパシタ素子及びキャパシタ内蔵プリント配線板
WO2021171939A1 (ja) * 2020-02-26 2021-09-02 日産化学株式会社 ポリイミドワニス
JP2021527743A (ja) * 2018-06-18 2021-10-14 デュポン エレクトロニクス インコーポレイテッド 可撓性電気導電性ペースト及びそれを使用して製造されるデバイス

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JP5077583B2 (ja) * 2008-03-26 2012-11-21 Ｊｓｒ株式会社 液晶配向剤および液晶表示素子
JP5019064B2 (ja) * 2008-03-26 2012-09-05 Ｊｓｒ株式会社 液晶配向剤および液晶表示素子
TWI518458B (zh) * 2008-03-28 2016-01-21 富士軟片股份有限公司 正型感光性樹脂組成物及使用它的硬化膜形成方法
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KR101050370B1 (ko) * 2009-08-18 2011-07-20 한국화학연구원 폴리이미드를 포함하는 유기절연체 형성용 조성물, 및 이를 이용한 유기절연체 및 유기박막트랜지스터
KR20120101660A (ko) * 2009-10-27 2012-09-14 이 아이 듀폰 디 네모아 앤드 캄파니 고온 마모 용도를 위한 폴리이미드 수지
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CN105273614B (zh) * 2015-10-12 2017-08-22 广东省宜华木业股份有限公司 室温反应制备用于木质材料表面uv超疏水聚酰亚胺涂料
US10153075B2 (en) * 2016-01-07 2018-12-11 E I Du Pont De Nemours And Company Polyimide-based polymer thick film resistor composition
CN109790405B (zh) 2017-09-11 2022-07-15 富士胶片电子材料美国有限公司 形成介电膜的组合物
CN109880111B (zh) * 2017-12-06 2021-08-06 中国石油化工股份有限公司 一种用于合成聚醚胺的催化剂及其制备方法
CN107897181A (zh) * 2017-12-08 2018-04-13 江汉大学 一种四甲基双酚a的应用及抗菌材料
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CN111925539B (zh) * 2020-07-10 2022-07-12 中国航空工业集团公司北京长城航空测控技术研究所 一种抗油液腐蚀动态吸-脱水高分子材料的制备方法
JP2022058252A (ja) * 2020-09-30 2022-04-11 日鉄ケミカル＆マテリアル株式会社 樹脂組成物、樹脂フィルム、積層体、カバーレイフィルム、樹脂付き銅箔、金属張積層板及び回路基板
US11854927B2 (en) 2021-03-24 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor package and method of forming same
KR20240042666A (ko) 2021-08-20 2024-04-02 스미또모 베이크라이트 가부시키가이샤 감광성 수지 조성물, 전자 디바이스의 제조 방법 및 전자 디바이스
US12009226B2 (en) * 2021-08-27 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method of forming same
CN114213790A (zh) * 2021-12-31 2022-03-22 南京清研新材料研究院有限公司 一种光配向聚酰亚胺组合物及其制备工艺
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US20070083017A1 (en) 2007-04-12
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