CN109790405B - 形成介电膜的组合物 - Google Patents
形成介电膜的组合物 Download PDFInfo
- Publication number
- CN109790405B CN109790405B CN201880001944.7A CN201880001944A CN109790405B CN 109790405 B CN109790405 B CN 109790405B CN 201880001944 A CN201880001944 A CN 201880001944A CN 109790405 B CN109790405 B CN 109790405B
- Authority
- CN
- China
- Prior art keywords
- dielectric film
- acrylate
- meth
- composition
- conductive metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 152
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims abstract description 117
- 238000000034 method Methods 0.000 claims abstract description 116
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 229920000642 polymer Polymers 0.000 claims abstract description 62
- 230000008569 process Effects 0.000 claims abstract description 61
- 239000004642 Polyimide Substances 0.000 claims abstract description 47
- 229920001721 polyimide Polymers 0.000 claims abstract description 47
- 238000000608 laser ablation Methods 0.000 claims abstract description 29
- 239000003054 catalyst Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 99
- -1 carboxyethyl Chemical group 0.000 claims description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 49
- 239000010949 copper Substances 0.000 claims description 49
- 229910052802 copper Inorganic materials 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 42
- 238000000151 deposition Methods 0.000 claims description 38
- 239000010936 titanium Substances 0.000 claims description 35
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 34
- 229910052719 titanium Inorganic materials 0.000 claims description 34
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 239000000945 filler Substances 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 22
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 21
- 229910052726 zirconium Inorganic materials 0.000 claims description 21
- 229910052735 hafnium Inorganic materials 0.000 claims description 19
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000004971 Cross linker Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 11
- 239000003431 cross linking reagent Substances 0.000 claims description 10
- 238000000059 patterning Methods 0.000 claims description 10
- 239000003999 initiator Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000011241 protective layer Substances 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 125000003342 alkenyl group Chemical group 0.000 claims description 6
- 125000000304 alkynyl group Chemical group 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000002203 pretreatment Methods 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 4
- 239000008199 coating composition Substances 0.000 claims description 4
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 3
- 239000010954 inorganic particle Substances 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- 229910002113 barium titanate Inorganic materials 0.000 claims description 2
- 229910021523 barium zirconate Inorganic materials 0.000 claims description 2
- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims description 2
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims description 2
- GROMGGTZECPEKN-UHFFFAOYSA-N sodium metatitanate Chemical compound [Na+].[Na+].[O-][Ti](=O)O[Ti](=O)O[Ti]([O-])=O GROMGGTZECPEKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 28
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 22
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 20
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 18
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 18
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 18
- 239000002318 adhesion promoter Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 17
- 230000008021 deposition Effects 0.000 description 16
- 238000006116 polymerization reaction Methods 0.000 description 16
- 239000007787 solid Substances 0.000 description 16
- 238000004132 cross linking Methods 0.000 description 15
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 14
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 11
- 230000000052 comparative effect Effects 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 10
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 10
- 229920005575 poly(amic acid) Polymers 0.000 description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 8
- 239000002245 particle Substances 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 7
- 238000007906 compression Methods 0.000 description 7
- 229920006149 polyester-amide block copolymer Polymers 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 5
- 238000002679 ablation Methods 0.000 description 5
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 5
- 239000012964 benzotriazole Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 230000006835 compression Effects 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 5
- 229910021641 deionized water Inorganic materials 0.000 description 5
- 229940116333 ethyl lactate Drugs 0.000 description 5
- 238000001914 filtration Methods 0.000 description 5
- 238000010907 mechanical stirring Methods 0.000 description 5
- 239000004014 plasticizer Substances 0.000 description 5
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 5
- 239000002002 slurry Substances 0.000 description 5
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 4
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 4
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 4
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 4
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 4
- 229920006378 biaxially oriented polypropylene Polymers 0.000 description 4
- 239000011127 biaxially oriented polypropylene Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- MPTQRFCYZCXJFQ-UHFFFAOYSA-L copper(II) chloride dihydrate Chemical group O.O.[Cl-].[Cl-].[Cu+2] MPTQRFCYZCXJFQ-UHFFFAOYSA-L 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- DMBHHRLKUKUOEG-UHFFFAOYSA-N diphenylamine Chemical compound C=1C=CC=CC=1NC1=CC=CC=C1 DMBHHRLKUKUOEG-UHFFFAOYSA-N 0.000 description 4
- 238000009472 formulation Methods 0.000 description 4
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- LCEDQNDDFOCWGG-UHFFFAOYSA-N morpholine-4-carbaldehyde Chemical compound O=CN1CCOCC1 LCEDQNDDFOCWGG-UHFFFAOYSA-N 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- OISVCGZHLKNMSJ-UHFFFAOYSA-N 2,6-dimethylpyridine Chemical compound CC1=CC=CC(C)=N1 OISVCGZHLKNMSJ-UHFFFAOYSA-N 0.000 description 3
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 3
- KHFCQXUMTHBEGQ-UHFFFAOYSA-J 5-hydroxy-2-methylidene-5-oxopentanoate titanium(4+) Chemical compound [Ti+4].OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O.OC(=O)CCC(=C)C([O-])=O KHFCQXUMTHBEGQ-UHFFFAOYSA-J 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 3
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 239000001089 [(2R)-oxolan-2-yl]methanol Substances 0.000 description 3
- 238000002835 absorbance Methods 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 239000000975 dye Substances 0.000 description 3
- 150000002148 esters Chemical class 0.000 description 3
- 238000011049 filling Methods 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- 230000000977 initiatory effect Effects 0.000 description 3
- 150000002576 ketones Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 239000011146 organic particle Substances 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 description 3
- BSYVTEYKTMYBMK-UHFFFAOYSA-N tetrahydrofurfuryl alcohol Chemical compound OCC1CCCO1 BSYVTEYKTMYBMK-UHFFFAOYSA-N 0.000 description 3
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 2
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 2
- KJUGUADJHNHALS-UHFFFAOYSA-N 1H-tetrazole Chemical compound C=1N=NNN=1 KJUGUADJHNHALS-UHFFFAOYSA-N 0.000 description 2
- SYOANZBNGDEJFH-UHFFFAOYSA-N 2,5-dihydro-1h-triazole Chemical compound C1NNN=C1 SYOANZBNGDEJFH-UHFFFAOYSA-N 0.000 description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 2
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 2
- HWWYDZCSSYKIAD-UHFFFAOYSA-N 3,5-dimethylpyridine Chemical compound CC1=CN=CC(C)=C1 HWWYDZCSSYKIAD-UHFFFAOYSA-N 0.000 description 2
- DKKYOQYISDAQER-UHFFFAOYSA-N 3-[3-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=C(OC=3C=C(N)C=CC=3)C=CC=2)=C1 DKKYOQYISDAQER-UHFFFAOYSA-N 0.000 description 2
- ZRJAHFLFCRNNMR-UHFFFAOYSA-N 3-amino-2-(4-aminophenyl)benzoic acid Chemical compound C1=CC(N)=CC=C1C1=C(N)C=CC=C1C(O)=O ZRJAHFLFCRNNMR-UHFFFAOYSA-N 0.000 description 2
- FWBHETKCLVMNFS-UHFFFAOYSA-N 4',6-Diamino-2-phenylindol Chemical compound C1=CC(C(=N)N)=CC=C1C1=CC2=CC=C(C(N)=N)C=C2N1 FWBHETKCLVMNFS-UHFFFAOYSA-N 0.000 description 2
- WUPRYUDHUFLKFL-UHFFFAOYSA-N 4-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=CC(N)=CC=2)=C1 WUPRYUDHUFLKFL-UHFFFAOYSA-N 0.000 description 2
- JCRRFJIVUPSNTA-UHFFFAOYSA-N 4-[4-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC(C=C1)=CC=C1OC1=CC=C(N)C=C1 JCRRFJIVUPSNTA-UHFFFAOYSA-N 0.000 description 2
- LNNSODHYZXCEJP-UHFFFAOYSA-N 4-methyl-2,3-dihydro-1h-indene Chemical compound CC1=CC=CC2=C1CCC2 LNNSODHYZXCEJP-UHFFFAOYSA-N 0.000 description 2
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 description 2
- KZSXRDLXTFEHJM-UHFFFAOYSA-N 5-(trifluoromethyl)benzene-1,3-diamine Chemical compound NC1=CC(N)=CC(C(F)(F)F)=C1 KZSXRDLXTFEHJM-UHFFFAOYSA-N 0.000 description 2
- RFXBCGVZEJEYGG-UHFFFAOYSA-N 5-methyl-2,3-dihydro-1h-indene Chemical compound CC1=CC=C2CCCC2=C1 RFXBCGVZEJEYGG-UHFFFAOYSA-N 0.000 description 2
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 2
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical compound NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 2
- HKMTVMBEALTRRR-UHFFFAOYSA-N Benzo[a]fluorene Chemical compound C1=CC=CC2=C3CC4=CC=CC=C4C3=CC=C21 HKMTVMBEALTRRR-UHFFFAOYSA-N 0.000 description 2
- 239000004342 Benzoyl peroxide Substances 0.000 description 2
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 2
- KLDXJTOLSGUMSJ-JGWLITMVSA-N Isosorbide Chemical compound O[C@@H]1CO[C@@H]2[C@@H](O)CO[C@@H]21 KLDXJTOLSGUMSJ-JGWLITMVSA-N 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 2
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- KFSLWBXXFJQRDL-UHFFFAOYSA-N Peracetic acid Chemical compound CC(=O)OO KFSLWBXXFJQRDL-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- SEEVRZDUPHZSOX-WPWMEQJKSA-N [(e)-1-[9-ethyl-6-(2-methylbenzoyl)carbazol-3-yl]ethylideneamino] acetate Chemical compound C=1C=C2N(CC)C3=CC=C(C(\C)=N\OC(C)=O)C=C3C2=CC=1C(=O)C1=CC=CC=C1C SEEVRZDUPHZSOX-WPWMEQJKSA-N 0.000 description 2
- AMNPXXIGUOKIPP-UHFFFAOYSA-N [4-(carbamothioylamino)phenyl]thiourea Chemical compound NC(=S)NC1=CC=C(NC(N)=S)C=C1 AMNPXXIGUOKIPP-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- ISAOCJYIOMOJEB-UHFFFAOYSA-N benzoin Chemical compound C=1C=CC=CC=1C(O)C(=O)C1=CC=CC=C1 ISAOCJYIOMOJEB-UHFFFAOYSA-N 0.000 description 2
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 150000001565 benzotriazoles Chemical class 0.000 description 2
- 235000019400 benzoyl peroxide Nutrition 0.000 description 2
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 description 2
- VHRGRCVQAFMJIZ-UHFFFAOYSA-N cadaverine Chemical compound NCCCCCN VHRGRCVQAFMJIZ-UHFFFAOYSA-N 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000018044 dehydration Effects 0.000 description 2
- 238000006297 dehydration reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- VFHVQBAGLAREND-UHFFFAOYSA-N diphenylphosphoryl-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 VFHVQBAGLAREND-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- GHLKSLMMWAKNBM-UHFFFAOYSA-N dodecane-1,12-diol Chemical compound OCCCCCCCCCCCCO GHLKSLMMWAKNBM-UHFFFAOYSA-N 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002334 glycols Chemical class 0.000 description 2
- 150000002357 guanidines Chemical class 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- GNOIPBMMFNIUFM-UHFFFAOYSA-N hexamethylphosphoric triamide Chemical compound CN(C)P(=O)(N(C)C)N(C)C GNOIPBMMFNIUFM-UHFFFAOYSA-N 0.000 description 2
- 230000002209 hydrophobic effect Effects 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000011256 inorganic filler Substances 0.000 description 2
- 229910003475 inorganic filler Inorganic materials 0.000 description 2
- HJOVHMDZYOCNQW-UHFFFAOYSA-N isophorone Chemical compound CC1=CC(=O)CC(C)(C)C1 HJOVHMDZYOCNQW-UHFFFAOYSA-N 0.000 description 2
- 150000002596 lactones Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 2
- 239000000347 magnesium hydroxide Substances 0.000 description 2
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- 238000003801 milling Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012074 organic phase Substances 0.000 description 2
- 239000003880 polar aprotic solvent Substances 0.000 description 2
- 229920006267 polyester film Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000012286 potassium permanganate Substances 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 2
- 150000004040 pyrrolidinones Chemical class 0.000 description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 2
- 150000003852 triazoles Chemical class 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- IZGZHGAANAVEBU-UHFFFAOYSA-N (1,3-dioxobenzo[de]isoquinolin-2-yl) benzenesulfonate Chemical compound O=C1C(C=23)=CC=CC3=CC=CC=2C(=O)N1OS(=O)(=O)C1=CC=CC=C1 IZGZHGAANAVEBU-UHFFFAOYSA-N 0.000 description 1
- QNODIIQQMGDSEF-UHFFFAOYSA-N (1-hydroxycyclohexyl)-phenylmethanone Chemical compound C=1C=CC=CC=1C(=O)C1(O)CCCCC1 QNODIIQQMGDSEF-UHFFFAOYSA-N 0.000 description 1
- MCUMKZQJKPLVBJ-UHFFFAOYSA-N (2,4-dinitrophenyl)methyl 4-(trifluoromethyl)benzenesulfonate Chemical compound [O-][N+](=O)C1=CC([N+](=O)[O-])=CC=C1COS(=O)(=O)C1=CC=C(C(F)(F)F)C=C1 MCUMKZQJKPLVBJ-UHFFFAOYSA-N 0.000 description 1
- MCJPJAJHPRCILL-UHFFFAOYSA-N (2,6-dinitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O MCJPJAJHPRCILL-UHFFFAOYSA-N 0.000 description 1
- MCVVDMSWCQUKEV-UHFFFAOYSA-N (2-nitrophenyl)methyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1[N+]([O-])=O MCVVDMSWCQUKEV-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MEJYDZQQVZJMPP-ULAWRXDQSA-N (3s,3ar,6r,6ar)-3,6-dimethoxy-2,3,3a,5,6,6a-hexahydrofuro[3,2-b]furan Chemical compound CO[C@H]1CO[C@@H]2[C@H](OC)CO[C@@H]21 MEJYDZQQVZJMPP-ULAWRXDQSA-N 0.000 description 1
- NHAZGSRLKBTDBF-UHFFFAOYSA-N 1,2,4-triazol-1-amine Chemical compound NN1C=NC=N1 NHAZGSRLKBTDBF-UHFFFAOYSA-N 0.000 description 1
- GEYOCULIXLDCMW-UHFFFAOYSA-N 1,2-phenylenediamine Chemical compound NC1=CC=CC=C1N GEYOCULIXLDCMW-UHFFFAOYSA-N 0.000 description 1
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- UICXTANXZJJIBC-UHFFFAOYSA-N 1-(1-hydroperoxycyclohexyl)peroxycyclohexan-1-ol Chemical compound C1CCCCC1(O)OOC1(OO)CCCCC1 UICXTANXZJJIBC-UHFFFAOYSA-N 0.000 description 1
- DGVSYJXJJQOOTG-UHFFFAOYSA-N 1-(3,4-dicarboxyphenyl)-1,3,3-trimethyl-2h-indene-5,6-dicarboxylic acid Chemical compound C12=CC(C(O)=O)=C(C(O)=O)C=C2C(C)(C)CC1(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 DGVSYJXJJQOOTG-UHFFFAOYSA-N 0.000 description 1
- GLQZKLVNEGUZHG-UHFFFAOYSA-N 1-(3-amino-4-methylphenyl)-1,3,3,6-tetramethyl-2h-inden-4-amine Chemical compound NC1=CC(C)=CC2=C1C(C)(C)CC2(C)C1=CC=C(C)C(N)=C1 GLQZKLVNEGUZHG-UHFFFAOYSA-N 0.000 description 1
- MHOJULUYHDJEOA-UHFFFAOYSA-N 1-(3-amino-4-methylphenyl)-1,3,3,6-tetramethyl-2h-inden-5-amine Chemical compound C1=C(N)C(C)=CC=C1C1(C)C2=CC(C)=C(N)C=C2C(C)(C)C1 MHOJULUYHDJEOA-UHFFFAOYSA-N 0.000 description 1
- UUWJBXKHMMQDED-UHFFFAOYSA-N 1-(3-chlorophenyl)ethanone Chemical compound CC(=O)C1=CC=CC(Cl)=C1 UUWJBXKHMMQDED-UHFFFAOYSA-N 0.000 description 1
- CGSKOGYKWHUSLC-UHFFFAOYSA-N 1-(4-aminophenyl)-1,3,3-trimethyl-2h-inden-5-amine Chemical compound C12=CC=C(N)C=C2C(C)(C)CC1(C)C1=CC=C(N)C=C1 CGSKOGYKWHUSLC-UHFFFAOYSA-N 0.000 description 1
- QCZZSANNLWPGEA-UHFFFAOYSA-N 1-(4-phenylphenyl)ethanone Chemical group C1=CC(C(=O)C)=CC=C1C1=CC=CC=C1 QCZZSANNLWPGEA-UHFFFAOYSA-N 0.000 description 1
- GGZHVNZHFYCSEV-UHFFFAOYSA-N 1-Phenyl-5-mercaptotetrazole Chemical compound SC1=NN=NN1C1=CC=CC=C1 GGZHVNZHFYCSEV-UHFFFAOYSA-N 0.000 description 1
- VWJFWYXFPOARLW-UHFFFAOYSA-N 1-cyclohexyl-2-diazonio-2-(4-methylphenyl)sulfonylethenolate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)C([N+]#N)=C([O-])C1CCCCC1 VWJFWYXFPOARLW-UHFFFAOYSA-N 0.000 description 1
- CNJRPYFBORAQAU-UHFFFAOYSA-N 1-ethoxy-2-(2-methoxyethoxy)ethane Chemical compound CCOCCOCCOC CNJRPYFBORAQAU-UHFFFAOYSA-N 0.000 description 1
- KBYAXHYSPYSWSO-UHFFFAOYSA-N 1-methyl-1h-naphthalen-2-one Chemical compound C1=CC=C2C(C)C(=O)C=CC2=C1 KBYAXHYSPYSWSO-UHFFFAOYSA-N 0.000 description 1
- FIPKSKMDTAQBDJ-UHFFFAOYSA-N 1-methyl-2,3-dihydro-1h-indene Chemical compound C1=CC=C2C(C)CCC2=C1 FIPKSKMDTAQBDJ-UHFFFAOYSA-N 0.000 description 1
- XOHZHMUQBFJTNH-UHFFFAOYSA-N 1-methyl-2h-tetrazole-5-thione Chemical compound CN1N=NN=C1S XOHZHMUQBFJTNH-UHFFFAOYSA-N 0.000 description 1
- VWSWXWDRIFCYPV-UHFFFAOYSA-N 1-pentyltriazole Chemical compound CCCCCN1C=CN=N1 VWSWXWDRIFCYPV-UHFFFAOYSA-N 0.000 description 1
- QWENRTYMTSOGBR-UHFFFAOYSA-N 1H-1,2,3-Triazole Chemical compound C=1C=NNN=1 QWENRTYMTSOGBR-UHFFFAOYSA-N 0.000 description 1
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 1
- AFBBKYQYNPNMAT-UHFFFAOYSA-N 1h-1,2,4-triazol-1-ium-3-thiolate Chemical compound SC=1N=CNN=1 AFBBKYQYNPNMAT-UHFFFAOYSA-N 0.000 description 1
- PIZHFBODNLEQBL-UHFFFAOYSA-N 2,2-diethoxy-1-phenylethanone Chemical compound CCOC(OCC)C(=O)C1=CC=CC=C1 PIZHFBODNLEQBL-UHFFFAOYSA-N 0.000 description 1
- LTMRRSWNXVJMBA-UHFFFAOYSA-L 2,2-diethylpropanedioate Chemical compound CCC(CC)(C([O-])=O)C([O-])=O LTMRRSWNXVJMBA-UHFFFAOYSA-L 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- FXGQUGCFZKMIJW-UHFFFAOYSA-N 2,4,5,6-tetrafluorobenzene-1,3-diamine Chemical compound NC1=C(F)C(N)=C(F)C(F)=C1F FXGQUGCFZKMIJW-UHFFFAOYSA-N 0.000 description 1
- 229960001406 2,5-dimethylisosorbide Drugs 0.000 description 1
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- JHQVCQDWGSXTFE-UHFFFAOYSA-N 2-(2-prop-2-enoxycarbonyloxyethoxy)ethyl prop-2-enyl carbonate Chemical compound C=CCOC(=O)OCCOCCOC(=O)OCC=C JHQVCQDWGSXTFE-UHFFFAOYSA-N 0.000 description 1
- UOTQEHLQKASWQO-UHFFFAOYSA-N 2-(5-sulfanylidene-2h-tetrazol-1-yl)acetic acid Chemical compound OC(=O)CN1N=NN=C1S UOTQEHLQKASWQO-UHFFFAOYSA-N 0.000 description 1
- ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 2-(trifluoromethyl)benzene-1,4-diamine Chemical compound NC1=CC=C(N)C(C(F)(F)F)=C1 ZQQOGBKIFPCFMJ-UHFFFAOYSA-N 0.000 description 1
- FFYTTYVSDVWNMY-UHFFFAOYSA-N 2-Methyl-5-nitroimidazole Chemical compound CC1=NC=C([N+]([O-])=O)N1 FFYTTYVSDVWNMY-UHFFFAOYSA-N 0.000 description 1
- WMYINDVYGQKYMI-UHFFFAOYSA-N 2-[2,2-bis(hydroxymethyl)butoxymethyl]-2-ethylpropane-1,3-diol Chemical compound CCC(CO)(CO)COCC(CC)(CO)CO WMYINDVYGQKYMI-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZCDADJXRUCOCJE-UHFFFAOYSA-N 2-chlorothioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(Cl)=CC=C3SC2=C1 ZCDADJXRUCOCJE-UHFFFAOYSA-N 0.000 description 1
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 1
- RIWRBSMFKVOJMN-UHFFFAOYSA-N 2-methyl-1-phenylpropan-2-ol Chemical compound CC(C)(O)CC1=CC=CC=C1 RIWRBSMFKVOJMN-UHFFFAOYSA-N 0.000 description 1
- MWGYLUXMIMSOTM-UHFFFAOYSA-N 2-methyl-2,3-dihydro-1h-indene Chemical compound C1=CC=C2CC(C)CC2=C1 MWGYLUXMIMSOTM-UHFFFAOYSA-N 0.000 description 1
- XWKFPIODWVPXLX-UHFFFAOYSA-N 2-methyl-5-methylpyridine Natural products CC1=CC=C(C)N=C1 XWKFPIODWVPXLX-UHFFFAOYSA-N 0.000 description 1
- RFSCGDQQLKVJEJ-UHFFFAOYSA-N 2-methylbutan-2-yl benzenecarboperoxoate Chemical compound CCC(C)(C)OOC(=O)C1=CC=CC=C1 RFSCGDQQLKVJEJ-UHFFFAOYSA-N 0.000 description 1
- RCEJCSULJQNRQQ-UHFFFAOYSA-N 2-methylbutanenitrile Chemical compound CCC(C)C#N RCEJCSULJQNRQQ-UHFFFAOYSA-N 0.000 description 1
- BSKHPKMHTQYZBB-UHFFFAOYSA-N 2-methylpyridine Chemical compound CC1=CC=CC=N1 BSKHPKMHTQYZBB-UHFFFAOYSA-N 0.000 description 1
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 1
- MYISVPVWAQRUTL-UHFFFAOYSA-N 2-methylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C)=CC=C3SC2=C1 MYISVPVWAQRUTL-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- JMTMSDXUXJISAY-UHFFFAOYSA-N 2H-benzotriazol-4-ol Chemical compound OC1=CC=CC2=C1N=NN2 JMTMSDXUXJISAY-UHFFFAOYSA-N 0.000 description 1
- YTZPUTADNGREHA-UHFFFAOYSA-N 2h-benzo[e]benzotriazole Chemical compound C1=CC2=CC=CC=C2C2=NNN=C21 YTZPUTADNGREHA-UHFFFAOYSA-N 0.000 description 1
- ULRPISSMEBPJLN-UHFFFAOYSA-N 2h-tetrazol-5-amine Chemical compound NC1=NN=NN1 ULRPISSMEBPJLN-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical group C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- LBLCXNQFTZHQPG-UHFFFAOYSA-N 3,3,5-trimethyl-1,2-dihydroindene-4,6-diamine Chemical compound CC1=C(N)C=C2CCC(C)(C)C2=C1N LBLCXNQFTZHQPG-UHFFFAOYSA-N 0.000 description 1
- ZTECVWNTLJTZLK-UHFFFAOYSA-N 3,3,7-trimethyl-1,2-dihydroindene-4,6-diamine Chemical compound C1=C(N)C(C)=C2CCC(C)(C)C2=C1N ZTECVWNTLJTZLK-UHFFFAOYSA-N 0.000 description 1
- PBTJHERGAPXNPR-UHFFFAOYSA-N 3,3-dimethyl-1,2-dihydroindene-4,6-diamine Chemical compound NC1=CC(N)=C2C(C)(C)CCC2=C1 PBTJHERGAPXNPR-UHFFFAOYSA-N 0.000 description 1
- RLLGRWMXMOAFBT-UHFFFAOYSA-N 3,3-dimethyl-1,2-dihydroindene-4,7-diamine Chemical compound NC1=CC=C(N)C2=C1C(C)(C)CC2 RLLGRWMXMOAFBT-UHFFFAOYSA-N 0.000 description 1
- DUTLDPJDAOIISX-UHFFFAOYSA-N 3-(1,1,1,3,3,3-hexafluoropropan-2-yl)aniline Chemical compound NC1=CC=CC(C(C(F)(F)F)C(F)(F)F)=C1 DUTLDPJDAOIISX-UHFFFAOYSA-N 0.000 description 1
- FRIBMENBGGCKPD-UHFFFAOYSA-N 3-(2,3-dimethoxyphenyl)prop-2-enal Chemical compound COC1=CC=CC(C=CC=O)=C1OC FRIBMENBGGCKPD-UHFFFAOYSA-N 0.000 description 1
- PEQMXHDQUPCPQJ-UHFFFAOYSA-N 3-(3,4-dicarboxyphenyl)-1,1,3-trimethyl-2h-indene-4,5-dicarboxylic acid Chemical compound C1=CC(C(O)=O)=C(C(O)=O)C2=C1C(C)(C)CC2(C)C1=CC=C(C(O)=O)C(C(O)=O)=C1 PEQMXHDQUPCPQJ-UHFFFAOYSA-N 0.000 description 1
- LJGHYPLBDBRCRZ-UHFFFAOYSA-N 3-(3-aminophenyl)sulfonylaniline Chemical compound NC1=CC=CC(S(=O)(=O)C=2C=C(N)C=CC=2)=C1 LJGHYPLBDBRCRZ-UHFFFAOYSA-N 0.000 description 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 description 1
- GXDMUOPCQNLBCZ-UHFFFAOYSA-N 3-(3-triethoxysilylpropyl)oxolane-2,5-dione Chemical compound CCO[Si](OCC)(OCC)CCCC1CC(=O)OC1=O GXDMUOPCQNLBCZ-UHFFFAOYSA-N 0.000 description 1
- WBUSESIMOZDSHU-UHFFFAOYSA-N 3-(4,5-dihydroimidazol-1-yl)propyl-triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN1CCN=C1 WBUSESIMOZDSHU-UHFFFAOYSA-N 0.000 description 1
- ZBMISJGHVWNWTE-UHFFFAOYSA-N 3-(4-aminophenoxy)aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(N)=C1 ZBMISJGHVWNWTE-UHFFFAOYSA-N 0.000 description 1
- RNLHGQLZWXBQNY-UHFFFAOYSA-N 3-(aminomethyl)-3,5,5-trimethylcyclohexan-1-amine Chemical compound CC1(C)CC(N)CC(C)(CN)C1 RNLHGQLZWXBQNY-UHFFFAOYSA-N 0.000 description 1
- INQGLILZDPLSJY-UHFFFAOYSA-N 3-[3-(4-aminophenoxy)phenoxy]aniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC(OC=2C=C(N)C=CC=2)=C1 INQGLILZDPLSJY-UHFFFAOYSA-N 0.000 description 1
- LBPVOEHZEWAJKQ-UHFFFAOYSA-N 3-[4-(3-aminophenoxy)phenoxy]aniline Chemical compound NC1=CC=CC(OC=2C=CC(OC=3C=C(N)C=CC=3)=CC=2)=C1 LBPVOEHZEWAJKQ-UHFFFAOYSA-N 0.000 description 1
- GDDNTTHUKVNJRA-UHFFFAOYSA-N 3-bromo-3,3-difluoroprop-1-ene Chemical compound FC(F)(Br)C=C GDDNTTHUKVNJRA-UHFFFAOYSA-N 0.000 description 1
- MFKRHJVUCZRDTF-UHFFFAOYSA-N 3-methoxy-3-methylbutan-1-ol Chemical compound COC(C)(C)CCO MFKRHJVUCZRDTF-UHFFFAOYSA-N 0.000 description 1
- AXNUJYHFQHQZBE-UHFFFAOYSA-N 3-methylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N)=C1N AXNUJYHFQHQZBE-UHFFFAOYSA-N 0.000 description 1
- YOABZRCMJMKPFF-UHFFFAOYSA-N 3-triethoxysilylaniline Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC(N)=C1 YOABZRCMJMKPFF-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- LVACOMKKELLCHJ-UHFFFAOYSA-N 3-trimethoxysilylpropylurea Chemical compound CO[Si](OC)(OC)CCCNC(N)=O LVACOMKKELLCHJ-UHFFFAOYSA-N 0.000 description 1
- MKTOIPPVFPJEQO-UHFFFAOYSA-N 4-(3-carboxypropanoylperoxy)-4-oxobutanoic acid Chemical compound OC(=O)CCC(=O)OOC(=O)CCC(O)=O MKTOIPPVFPJEQO-UHFFFAOYSA-N 0.000 description 1
- QYIMZXITLDTULQ-UHFFFAOYSA-N 4-(4-amino-2-methylphenyl)-3-methylaniline Chemical group CC1=CC(N)=CC=C1C1=CC=C(N)C=C1C QYIMZXITLDTULQ-UHFFFAOYSA-N 0.000 description 1
- JPZRPCNEISCANI-UHFFFAOYSA-N 4-(4-aminophenyl)-3-(trifluoromethyl)aniline Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1C(F)(F)F JPZRPCNEISCANI-UHFFFAOYSA-N 0.000 description 1
- KHYXYOGWAIYVBD-UHFFFAOYSA-N 4-(4-propylphenoxy)aniline Chemical compound C1=CC(CCC)=CC=C1OC1=CC=C(N)C=C1 KHYXYOGWAIYVBD-UHFFFAOYSA-N 0.000 description 1
- FADZWOLRHIYXHJ-UHFFFAOYSA-N 4-[4-amino-2-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound FC(F)(F)C1=CC(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 FADZWOLRHIYXHJ-UHFFFAOYSA-N 0.000 description 1
- PJWQLRKRVISYPL-UHFFFAOYSA-N 4-[4-amino-3-(trifluoromethyl)phenyl]-2-(trifluoromethyl)aniline Chemical compound C1=C(C(F)(F)F)C(N)=CC=C1C1=CC=C(N)C(C(F)(F)F)=C1 PJWQLRKRVISYPL-UHFFFAOYSA-N 0.000 description 1
- ZNBNBTIDJSKEAM-UHFFFAOYSA-N 4-[7-hydroxy-2-[5-[5-[6-hydroxy-6-(hydroxymethyl)-3,5-dimethyloxan-2-yl]-3-methyloxolan-2-yl]-5-methyloxolan-2-yl]-2,8-dimethyl-1,10-dioxaspiro[4.5]decan-9-yl]-2-methyl-3-propanoyloxypentanoic acid Chemical compound C1C(O)C(C)C(C(C)C(OC(=O)CC)C(C)C(O)=O)OC11OC(C)(C2OC(C)(CC2)C2C(CC(O2)C2C(CC(C)C(O)(CO)O2)C)C)CC1 ZNBNBTIDJSKEAM-UHFFFAOYSA-N 0.000 description 1
- WOYZXEVUWXQVNV-UHFFFAOYSA-N 4-phenoxyaniline Chemical compound C1=CC(N)=CC=C1OC1=CC=CC=C1 WOYZXEVUWXQVNV-UHFFFAOYSA-N 0.000 description 1
- OAPDPORYXWQVJE-UHFFFAOYSA-N 4-propylaniline Chemical compound CCCC1=CC=C(N)C=C1 OAPDPORYXWQVJE-UHFFFAOYSA-N 0.000 description 1
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 description 1
- DYXJYKFGJLLBHY-UHFFFAOYSA-N 5-(1,1,1,3,3,3-hexafluoropropan-2-yl)-2-methylaniline Chemical compound NC=1C=C(C=CC1C)C(C(F)(F)F)C(F)(F)F DYXJYKFGJLLBHY-UHFFFAOYSA-N 0.000 description 1
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 1
- YZTYEGCWRPJWEE-UHFFFAOYSA-N 5-(benzotriazol-2-yl)pentan-1-amine Chemical compound C1=CC=CC2=NN(CCCCCN)N=C21 YZTYEGCWRPJWEE-UHFFFAOYSA-N 0.000 description 1
- ZHBXLZQQVCDGPA-UHFFFAOYSA-N 5-[(1,3-dioxo-2-benzofuran-5-yl)sulfonyl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(S(=O)(=O)C=2C=C3C(=O)OC(C3=CC=2)=O)=C1 ZHBXLZQQVCDGPA-UHFFFAOYSA-N 0.000 description 1
- QHHKLPCQTTWFSS-UHFFFAOYSA-N 5-[2-(1,3-dioxo-2-benzofuran-5-yl)-1,1,1,3,3,3-hexafluoropropan-2-yl]-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)(C(F)(F)F)C(F)(F)F)=C1 QHHKLPCQTTWFSS-UHFFFAOYSA-N 0.000 description 1
- DUZDWKQSIJVSMY-UHFFFAOYSA-N 5-[4-(6-amino-2-methylhexan-2-yl)phenyl]-5-methylhexan-1-amine Chemical compound NCCCCC(C)(C)C1=CC=C(C(C)(C)CCCCN)C=C1 DUZDWKQSIJVSMY-UHFFFAOYSA-N 0.000 description 1
- WZUUZPAYWFIBDF-UHFFFAOYSA-N 5-amino-1,2-dihydro-1,2,4-triazole-3-thione Chemical compound NC1=NNC(S)=N1 WZUUZPAYWFIBDF-UHFFFAOYSA-N 0.000 description 1
- WYXQDGGJZMWJOX-UHFFFAOYSA-N 5-ethyl-1-methyltetrazole Chemical compound CCC1=NN=NN1C WYXQDGGJZMWJOX-UHFFFAOYSA-N 0.000 description 1
- LRUDIIUSNGCQKF-UHFFFAOYSA-N 5-methyl-1H-benzotriazole Chemical compound C1=C(C)C=CC2=NNN=C21 LRUDIIUSNGCQKF-UHFFFAOYSA-N 0.000 description 1
- PZKFSRWSQOQYNR-UHFFFAOYSA-N 5-methyl-1h-1,2,4-triazole Chemical compound CC1=NC=NN1 PZKFSRWSQOQYNR-UHFFFAOYSA-N 0.000 description 1
- XZGLNCKSNVGDNX-UHFFFAOYSA-N 5-methyl-2h-tetrazole Chemical compound CC=1N=NNN=1 XZGLNCKSNVGDNX-UHFFFAOYSA-N 0.000 description 1
- WSYOWIMKNNMEMZ-UHFFFAOYSA-N 5-methyl-4-nitro-1h-imidazole Chemical compound CC=1NC=NC=1[N+]([O-])=O WSYOWIMKNNMEMZ-UHFFFAOYSA-N 0.000 description 1
- HCEKEODXLSQFDV-UHFFFAOYSA-N 5-methyltriazol-1-amine Chemical compound CC1=CN=NN1N HCEKEODXLSQFDV-UHFFFAOYSA-N 0.000 description 1
- AOCDQWRMYHJTMY-UHFFFAOYSA-N 5-nitro-2h-benzotriazole Chemical compound C1=C([N+](=O)[O-])C=CC2=NNN=C21 AOCDQWRMYHJTMY-UHFFFAOYSA-N 0.000 description 1
- WXSBVEKBZGNSDY-UHFFFAOYSA-N 5-phenyl-2h-benzotriazole Chemical compound C1=CC=CC=C1C1=CC2=NNN=C2C=C1 WXSBVEKBZGNSDY-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- AJNQPSCMOSUVKK-UHFFFAOYSA-N 5-propan-2-yl-1h-1,2,4-triazole Chemical compound CC(C)C=1N=CNN=1 AJNQPSCMOSUVKK-UHFFFAOYSA-N 0.000 description 1
- IEOFXFVYXRHTMH-UHFFFAOYSA-N 5-thiophen-2-yl-2H-benzotriazole Chemical compound C1=CSC(C2=CC3=NNN=C3C=C2)=C1 IEOFXFVYXRHTMH-UHFFFAOYSA-N 0.000 description 1
- CAJCGERRDZYERF-UHFFFAOYSA-N 7-ethyl-3,3-dimethyl-1,2-dihydroindene-4,6-diamine Chemical compound C1=C(N)C(CC)=C2CCC(C)(C)C2=C1N CAJCGERRDZYERF-UHFFFAOYSA-N 0.000 description 1
- CPGPAVAKSZHMBP-UHFFFAOYSA-N 9-methylanthracene Chemical compound C1=CC=C2C(C)=C(C=CC=C3)C3=CC2=C1 CPGPAVAKSZHMBP-UHFFFAOYSA-N 0.000 description 1
- BIWPFZAZLYKHDA-UHFFFAOYSA-N 9h-fluorene-2,6-diamine Chemical compound C1=C(N)C=C2C3=CC=C(N)C=C3CC2=C1 BIWPFZAZLYKHDA-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- UDFGCAKEVMRBJU-UHFFFAOYSA-N CC(C[PH2]=O)CC(C)(C)C Chemical compound CC(C[PH2]=O)CC(C)(C)C UDFGCAKEVMRBJU-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- ZMDDERVSCYEKPQ-UHFFFAOYSA-N Ethyl (mesitylcarbonyl)phenylphosphinate Chemical compound C=1C=CC=CC=1P(=O)(OCC)C(=O)C1=C(C)C=C(C)C=C1C ZMDDERVSCYEKPQ-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-N Nitrous acid Chemical compound ON=O IOVCWXUNBOPUCH-UHFFFAOYSA-N 0.000 description 1
- 229940123973 Oxygen scavenger Drugs 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920002873 Polyethylenimine Polymers 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 244000028419 Styrax benzoin Species 0.000 description 1
- 235000000126 Styrax benzoin Nutrition 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 235000008411 Sumatra benzointree Nutrition 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- NTLSYSZBWNPERW-UHFFFAOYSA-N [2-hydroxy-3-[2-hydroxy-3-(4-methylphenyl)sulfonyloxy-1,2-diphenylpropoxy]-2,3-diphenylpropyl] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC(O)(C=1C=CC=CC=1)C(C=1C=CC=CC=1)OC(C(O)(COS(=O)(=O)C=1C=CC(C)=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 NTLSYSZBWNPERW-UHFFFAOYSA-N 0.000 description 1
- KGFXDXUJQHTGSD-UHFFFAOYSA-N [3-(2-hydroxy-2-phenylacetyl)-2-methylphenyl] 4-methylbenzenesulfonate Chemical compound CC1=CC=C(C=C1)S(=O)(=O)OC=1C(=C(C=CC=1)C(=O)C(O)C1=CC=CC=C1)C KGFXDXUJQHTGSD-UHFFFAOYSA-N 0.000 description 1
- MWIIAFYVTVUWOU-UHFFFAOYSA-M [O-]O.C[N+](C)(C)C Chemical compound [O-]O.C[N+](C)(C)C MWIIAFYVTVUWOU-UHFFFAOYSA-M 0.000 description 1
- LOCXTTRLSIDGPS-UHFFFAOYSA-N [[1-oxo-1-(4-phenylsulfanylphenyl)octan-2-ylidene]amino] benzoate Chemical compound C=1C=C(SC=2C=CC=CC=2)C=CC=1C(=O)C(CCCCCC)=NOC(=O)C1=CC=CC=C1 LOCXTTRLSIDGPS-UHFFFAOYSA-N 0.000 description 1
- GLCCGSHEKBXUGH-UHFFFAOYSA-N [[5-[cyano-(2-methylphenyl)methylidene]thiophen-2-ylidene]amino] 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)ON=C(S1)C=CC1=C(C#N)C1=CC=CC=C1C GLCCGSHEKBXUGH-UHFFFAOYSA-N 0.000 description 1
- GLGXSTXZLFQYKJ-UHFFFAOYSA-N [cyclohexylsulfonyl(diazo)methyl]sulfonylcyclohexane Chemical compound C1CCCCC1S(=O)(=O)C(=[N+]=[N-])S(=O)(=O)C1CCCCC1 GLGXSTXZLFQYKJ-UHFFFAOYSA-N 0.000 description 1
- GUCYFKSBFREPBC-UHFFFAOYSA-N [phenyl-(2,4,6-trimethylbenzoyl)phosphoryl]-(2,4,6-trimethylphenyl)methanone Chemical compound CC1=CC(C)=CC(C)=C1C(=O)P(=O)(C=1C=CC=CC=1)C(=O)C1=C(C)C=C(C)C=C1C GUCYFKSBFREPBC-UHFFFAOYSA-N 0.000 description 1
- KYIKRXIYLAGAKQ-UHFFFAOYSA-N abcn Chemical compound C1CCCCC1(C#N)N=NC1(C#N)CCCCC1 KYIKRXIYLAGAKQ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000011481 absorbance measurement Methods 0.000 description 1
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- HXGDTGSAIMULJN-UHFFFAOYSA-N acetnaphthylene Natural products C1=CC(C=C2)=C3C2=CC=CC3=C1 HXGDTGSAIMULJN-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000005370 alkoxysilyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- KHPLPBHMTCTCHA-UHFFFAOYSA-N ammonium chlorate Chemical compound N.OCl(=O)=O KHPLPBHMTCTCHA-UHFFFAOYSA-N 0.000 description 1
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium peroxydisulfate Substances [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 1
- VAZSKTXWXKYQJF-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)OOS([O-])=O VAZSKTXWXKYQJF-UHFFFAOYSA-N 0.000 description 1
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- ARCGXLSVLAOJQL-UHFFFAOYSA-N anhydrous trimellitic acid Natural products OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 ARCGXLSVLAOJQL-UHFFFAOYSA-N 0.000 description 1
- XCCCHWWMLSAIOH-UHFFFAOYSA-N anthracen-1-ylmethanol Chemical compound C1=CC=C2C=C3C(CO)=CC=CC3=CC2=C1 XCCCHWWMLSAIOH-UHFFFAOYSA-N 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000008346 aqueous phase Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- ZRDJERPXCFOFCP-UHFFFAOYSA-N azane;iodic acid Chemical compound [NH4+].[O-]I(=O)=O ZRDJERPXCFOFCP-UHFFFAOYSA-N 0.000 description 1
- YUUVAZCKXDQEIS-UHFFFAOYSA-N azanium;chlorite Chemical compound [NH4+].[O-]Cl=O YUUVAZCKXDQEIS-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 150000008366 benzophenones Chemical class 0.000 description 1
- OVHDZBAFUMEXCX-UHFFFAOYSA-N benzyl 4-methylbenzenesulfonate Chemical compound C1=CC(C)=CC=C1S(=O)(=O)OCC1=CC=CC=C1 OVHDZBAFUMEXCX-UHFFFAOYSA-N 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- QDHFHIQKOVNCNC-UHFFFAOYSA-N butane-1-sulfonic acid Chemical compound CCCCS(O)(=O)=O QDHFHIQKOVNCNC-UHFFFAOYSA-N 0.000 description 1
- YHASWHZGWUONAO-UHFFFAOYSA-N butanoyl butanoate Chemical compound CCCC(=O)OC(=O)CCC YHASWHZGWUONAO-UHFFFAOYSA-N 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 150000003997 cyclic ketones Chemical class 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- UKJLNMAFNRKWGR-UHFFFAOYSA-N cyclohexatrienamine Chemical group NC1=CC=C=C[CH]1 UKJLNMAFNRKWGR-UHFFFAOYSA-N 0.000 description 1
- YQLZOAVZWJBZSY-UHFFFAOYSA-N decane-1,10-diamine Chemical compound NCCCCCCCCCCN YQLZOAVZWJBZSY-UHFFFAOYSA-N 0.000 description 1
- 239000012024 dehydrating agents Substances 0.000 description 1
- QVQGTNFYPJQJNM-UHFFFAOYSA-N dicyclohexylmethanamine Chemical compound C1CCCCC1C(N)C1CCCCC1 QVQGTNFYPJQJNM-UHFFFAOYSA-N 0.000 description 1
- 238000007607 die coating method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-M ethanesulfonate Chemical compound CCS([O-])(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-M 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- BHXIWUJLHYHGSJ-UHFFFAOYSA-N ethyl 3-ethoxypropanoate Chemical compound CCOCCC(=O)OCC BHXIWUJLHYHGSJ-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- XXMIOPMDWAUFGU-UHFFFAOYSA-N hexane-1,6-diol Chemical compound OCCCCCCO XXMIOPMDWAUFGU-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- WFNASTYGEKUMIY-UHFFFAOYSA-N hydron;1h-imidazol-5-ylmethanol;chloride Chemical compound Cl.OCC1=CN=CN1 WFNASTYGEKUMIY-UHFFFAOYSA-N 0.000 description 1
- NPZTUJOABDZTLV-UHFFFAOYSA-N hydroxybenzotriazole Substances O=C1C=CC=C2NNN=C12 NPZTUJOABDZTLV-UHFFFAOYSA-N 0.000 description 1
- 229910000378 hydroxylammonium sulfate Inorganic materials 0.000 description 1
- 150000003949 imides Chemical group 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 125000000654 isopropylidene group Chemical group C(C)(C)=* 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 229940018564 m-phenylenediamine Drugs 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- PMRYVIKBURPHAH-UHFFFAOYSA-N methimazole Chemical compound CN1C=CNC1=S PMRYVIKBURPHAH-UHFFFAOYSA-N 0.000 description 1
- BDJSOPWXYLFTNW-UHFFFAOYSA-N methyl 3-methoxypropanoate Chemical compound COCCC(=O)OC BDJSOPWXYLFTNW-UHFFFAOYSA-N 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- BSDJDVJJSQFGOW-UHFFFAOYSA-N n,n-diethyl-2-triethoxysilylethanamine Chemical compound CCO[Si](OCC)(OCC)CCN(CC)CC BSDJDVJJSQFGOW-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- QJQAMHYHNCADNR-UHFFFAOYSA-N n-methylpropanamide Chemical compound CCC(=O)NC QJQAMHYHNCADNR-UHFFFAOYSA-N 0.000 description 1
- ILRCASAICYSGHZ-UHFFFAOYSA-N n-trimethoxysilylcyclohexanamine Chemical compound CO[Si](OC)(OC)NC1CCCCC1 ILRCASAICYSGHZ-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 1
- OADYBSJSJUFUBR-UHFFFAOYSA-N octanedial Chemical compound O=CCCCCCCC=O OADYBSJSJUFUBR-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- JGTNAGYHADQMCM-UHFFFAOYSA-N perfluorobutanesulfonic acid Chemical compound OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F JGTNAGYHADQMCM-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- JRKICGRDRMAZLK-UHFFFAOYSA-L peroxydisulfate Chemical compound [O-]S(=O)(=O)OOS([O-])(=O)=O JRKICGRDRMAZLK-UHFFFAOYSA-L 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- JLKDVMWYMMLWTI-UHFFFAOYSA-M potassium iodate Chemical compound [K+].[O-]I(=O)=O JLKDVMWYMMLWTI-UHFFFAOYSA-M 0.000 description 1
- 239000001230 potassium iodate Substances 0.000 description 1
- 235000006666 potassium iodate Nutrition 0.000 description 1
- 229940093930 potassium iodate Drugs 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- WYVAMUWZEOHJOQ-UHFFFAOYSA-N propionic anhydride Chemical compound CCC(=O)OC(=O)CC WYVAMUWZEOHJOQ-UHFFFAOYSA-N 0.000 description 1
- KRIOVPPHQSLHCZ-UHFFFAOYSA-N propiophenone Chemical compound CCC(=O)C1=CC=CC=C1 KRIOVPPHQSLHCZ-UHFFFAOYSA-N 0.000 description 1
- YPVDWEHVCUBACK-UHFFFAOYSA-N propoxycarbonyloxy propyl carbonate Chemical compound CCCOC(=O)OOC(=O)OCCC YPVDWEHVCUBACK-UHFFFAOYSA-N 0.000 description 1
- ILVGAIQLOCKNQA-UHFFFAOYSA-N propyl 2-hydroxypropanoate Chemical compound CCCOC(=O)C(C)O ILVGAIQLOCKNQA-UHFFFAOYSA-N 0.000 description 1
- RTHVZRHBNXZKKB-UHFFFAOYSA-N pyrazine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=NC(C(O)=O)=C(C(O)=O)N=C1C(O)=O RTHVZRHBNXZKKB-UHFFFAOYSA-N 0.000 description 1
- JRDBISOHUUQXHE-UHFFFAOYSA-N pyridine-2,3,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)N=C1C(O)=O JRDBISOHUUQXHE-UHFFFAOYSA-N 0.000 description 1
- NGVDGCNFYWLIFO-UHFFFAOYSA-N pyridoxal 5'-phosphate Chemical compound CC1=NC=C(COP(O)(O)=O)C(C=O)=C1O NGVDGCNFYWLIFO-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- LCHWKMAWSZDQRD-UHFFFAOYSA-N silylformonitrile Chemical class [SiH3]C#N LCHWKMAWSZDQRD-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical class S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical compound C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 description 1
- MDDUHVRJJAFRAU-YZNNVMRBSA-N tert-butyl-[(1r,3s,5z)-3-[tert-butyl(dimethyl)silyl]oxy-5-(2-diphenylphosphorylethylidene)-4-methylidenecyclohexyl]oxy-dimethylsilane Chemical compound C1[C@@H](O[Si](C)(C)C(C)(C)C)C[C@H](O[Si](C)(C)C(C)(C)C)C(=C)\C1=C/CP(=O)(C=1C=CC=CC=1)C1=CC=CC=C1 MDDUHVRJJAFRAU-YZNNVMRBSA-N 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- LUVHDTDFZLTVFM-UHFFFAOYSA-M tetramethylazanium;chlorate Chemical compound [O-]Cl(=O)=O.C[N+](C)(C)C LUVHDTDFZLTVFM-UHFFFAOYSA-M 0.000 description 1
- FDXKBUSUNHRUIZ-UHFFFAOYSA-M tetramethylazanium;chlorite Chemical compound [O-]Cl=O.C[N+](C)(C)C FDXKBUSUNHRUIZ-UHFFFAOYSA-M 0.000 description 1
- ZRVXFJFFJZFRLQ-UHFFFAOYSA-M tetramethylazanium;iodate Chemical compound [O-]I(=O)=O.C[N+](C)(C)C ZRVXFJFFJZFRLQ-UHFFFAOYSA-M 0.000 description 1
- ZCWKIFAQRXNZCH-UHFFFAOYSA-M tetramethylazanium;perchlorate Chemical compound C[N+](C)(C)C.[O-]Cl(=O)(=O)=O ZCWKIFAQRXNZCH-UHFFFAOYSA-M 0.000 description 1
- HLQAWDQQEJSALG-UHFFFAOYSA-M tetramethylazanium;periodate Chemical compound C[N+](C)(C)C.[O-]I(=O)(=O)=O HLQAWDQQEJSALG-UHFFFAOYSA-M 0.000 description 1
- 150000003573 thiols Chemical class 0.000 description 1
- LUEGQDUCMILDOJ-UHFFFAOYSA-N thiophene-2,3,4,5-tetracarboxylic acid Chemical compound OC(=O)C=1SC(C(O)=O)=C(C(O)=O)C=1C(O)=O LUEGQDUCMILDOJ-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- MPSUGQWRVNRJEE-UHFFFAOYSA-N triazol-1-amine Chemical compound NN1C=CN=N1 MPSUGQWRVNRJEE-UHFFFAOYSA-N 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- FTDRQHXSYGDMNJ-UHFFFAOYSA-N trimethoxy(3-pyrrol-1-ylpropyl)silane Chemical compound CO[Si](OC)(OC)CCCN1C=CC=C1 FTDRQHXSYGDMNJ-UHFFFAOYSA-N 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- AQLJVWUFPCUVLO-UHFFFAOYSA-N urea hydrogen peroxide Chemical compound OO.NC(N)=O AQLJVWUFPCUVLO-UHFFFAOYSA-N 0.000 description 1
- 150000003673 urethanes Chemical class 0.000 description 1
- 238000005292 vacuum distillation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
- C08F283/04—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polycarbonamides, polyesteramides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F2/00—Processes of polymerisation
- C08F2/46—Polymerisation initiated by wave energy or particle radiation
- C08F2/48—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
- C08F2/50—Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light with sensitising agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/102—Esters of polyhydric alcohols or polyhydric phenols of dialcohols, e.g. ethylene glycol di(meth)acrylate or 1,4-butanediol dimethacrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/105—Esters of polyhydric alcohols or polyhydric phenols of pentaalcohols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F267/00—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00
- C08F267/10—Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated polycarboxylic acids or derivatives thereof as defined in group C08F22/00 on to polymers of amides or imides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1003—Preparatory processes
- C08G73/1007—Preparatory processes from tetracarboxylic acids or derivatives and diamines
- C08G73/101—Preparatory processes from tetracarboxylic acids or derivatives and diamines containing chain terminating or branching agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1039—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors comprising halogen-containing substituents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1067—Wholly aromatic polyimides, i.e. having both tetracarboxylic and diamino moieties aromatically bound
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1085—Polyimides with diamino moieties or tetracarboxylic segments containing heterocyclic moieties
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1092—Polysuccinimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J3/00—Processes of treating or compounding macromolecular substances
- C08J3/24—Crosslinking, e.g. vulcanising, of macromolecules
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/24—Impregnating materials with prepolymers which can be polymerised in situ, e.g. manufacture of prepregs
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/34—Silicon-containing compounds
- C08K3/36—Silica
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
- C08K5/0025—Crosslinking or vulcanising agents; including accelerators
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/04—Oxygen-containing compounds
- C08K5/09—Carboxylic acids; Metal salts thereof; Anhydrides thereof
- C08K5/098—Metal salts of carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D179/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09D161/00 - C09D177/00
- C09D179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09D179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
- C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/40—Additives
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/025—Non-macromolecular photopolymerisable compounds having carbon-to-carbon triple bonds, e.g. acetylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
- G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
- G03F7/202—Masking pattern being obtained by thermal means, e.g. laser ablation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/38—Treatment before imagewise removal, e.g. prebaking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76865—Selective removal of parts of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5226—Via connections in a multilevel interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F222/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides, or nitriles thereof
- C08F222/10—Esters
- C08F222/1006—Esters of polyhydric alcohols or polyhydric phenols
- C08F222/106—Esters of polycondensation macromers
- C08F222/1065—Esters of polycondensation macromers of alcohol terminated (poly)urethanes, e.g. urethane(meth)acrylates
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2379/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
- C08J2379/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C08J2379/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/005—Additives being defined by their particle size in general
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Optics & Photonics (AREA)
- High Energy & Nuclear Physics (AREA)
- Ceramic Engineering (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Laminated Bodies (AREA)
- Paints Or Removers (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Materials For Photolithography (AREA)
- Graft Or Block Polymers (AREA)
- Inorganic Insulating Materials (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
本发明涉及一种形成介电膜的组合物,其包含a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种含金属的(甲基)丙烯酸酯;c)至少一种催化剂;d)至少一种溶剂,以及相关的工艺和相关产品。当通过激光烧蚀工艺图案化介电膜时,该组合物可以形成基本上不产生碎屑的介电膜。
Description
相关申请的交叉引用
本申请要求2017年11月6日提交的美国临时申请序列号62/581,895和2017年9月11日提交的美国临时申请序列号62/556,723的优先权。在先申请通过引用整体并入本文。
背景技术
移动计算应用的持续扩展需要在更小的器件占用空间中封装不断增长的计算能力。半导体器件的设计者依赖于使用各种新的芯片架构来满足新的器件要求。这些新架构不仅对新集成电路的设计者提出了重大挑战,而且对将使用这些器件的封装材料的设计者也提出了重大挑战。
发明内容
由于这些新的先进器件在很大程度上依赖晶圆和面板级封装(WLP和PLP)以及3D集成,因此对封装应用的介电材料需求不断发展。利用由多个通过多级通孔结构连接的电介质堆积层组成的高密度互连(HDI)架构以将更多的计算能力封装到更小的空间中。在先进的半导体封装应用中,有必要生产具有极小尺寸和紧密间距(例如2×2微米)的铜迹线的铜互连结构。介电膜的准分子激光烧蚀是实现这种图案化水平的便利技术之一。然而,对于传统的介电材料,在烧蚀过程中会形成大量的碎屑。碎屑的存在可以通过阻止均匀的种子层沉积来干扰铜沉积过程。因此,必须去除烧蚀碎屑。去除这种烧蚀碎屑通常需要通过化学和/或等离子体处理进行的额外的清洁工艺步骤,这增加了成本。为了减少或消除这种所需的清洁工艺,开发能够高分辨率图案化同时还产生很少或不产生烧蚀碎屑的介电材料将是有利的。本发明通过使用本发明的新型的形成介电膜的组合物解决了这种需要。
本发明的一个实施方案的特征在于一种新型的形成介电膜的组合物,包含:
a)至少一种完全酰亚胺化的聚酰亚胺聚合物;
b)至少一种含金属的(甲基)丙烯酸酯;
c)至少一种催化剂;和
d)至少一种溶剂。
在一些实施方案中,本发明的特征在于一种由本文所述组合物形成的新型介电膜(例如,能自己立住的膜)。在一些实施方案中,介电膜可含有:a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种含金属的(甲基)丙烯酸酯(例如,未交联的含金属的(甲基)丙烯酸酯);以及c)至少一种催化剂。在一些实施方案中,介电膜可包括(例如,在交联之后):a)至少一种完全酰亚胺化的聚酰亚胺聚合物;以及b)至少一种交联的含金属的(甲基)丙烯酸酯。
在一些实施方案中,本发明的特征在于沉积导电金属层(例如,产生嵌入的铜迹线结构)的方法,该方法包括以下步骤:
a)在衬底上涂覆(例如,通过旋涂)本文所述的形成介电膜的组合物,以形成介电膜;
b)将介电膜暴露于辐射源或热源;
c)图案化该膜以形成具有开口的图案化的介电膜;以及
d)在图案化的介电膜的至少一个开口中沉积导电金属。
在一些实施方案中,该方法还包括在沉积导电金属之前在图案化的介电膜上沉积种子层。
在一些实施方案中,本发明的特征在于一种用于制备干膜结构的方法。该方法包括:
(A)用本文所述的形成介电膜的组合物涂覆载体衬底;
(B)干燥涂覆的组合物以形成介电膜;和
(C)任选地将保护层施加到介电膜上。
附图说明
图1是用于在图案化的介电膜上沉积铜的常规方法的说明性方案。
图2是本发明的示例性发明方法的说明性方案。
发明详述
如本文所用,术语“完全酰亚胺化”是指本发明的聚酰亚胺聚合物为至少约90%(例如,至少约95%、至少约98%、至少约99%、或约100%)酰亚胺化。如本文所用,含金属的(甲基)丙烯酸酯(MCA)是指含有金属和(甲基)丙烯酸酯配体的化合物。MCA的(甲基)丙烯酸酯配体具有足够的反应性,以使MCA能够参与含MCA的膜的自由基诱导的交联。如本文所用,术语“(甲基)丙烯酸酯”包括丙烯酸酯和甲基丙烯酸酯。如本文所用,催化剂(例如引发剂)是当暴露于热源和/或辐射源时能够引发聚合或交联反应的化合物。如本文所用,交联剂是含有两个或更多个能在催化剂存在下进行交联或聚合反应的烯基或炔基的化合物。
在一些实施方案中,本发明的特征在于一种形成介电膜的组合物,包含:
a)至少一种完全酰亚胺化的聚酰亚胺聚合物;
b)至少一种含金属的(甲基)丙烯酸酯;
c)至少一种催化剂;和
d)至少一种溶剂。
在一些实施方案中,通过至少一种二胺与至少一种二羧酸二酐反应来制备形成介电膜的组合物的至少一种完全酰亚胺化的聚酰亚胺聚合物。合适的二胺的实例包括但不限于1-(4-氨基苯基)-1,3,3-三甲基茚满-5-胺(其他名称包括4,4'-[1,4-亚苯基-双(1-甲基亚乙基)]二苯胺)、5-氨基-6-甲基-1-(3'-氨基-4'-甲基苯基)-1,3,3-三甲基茚满、4-氨基-6-甲基-1-(3'-氨基-4'-甲基苯基)-1,3,3-三甲基茚满、5,7-二氨基-1,1-二甲基茚满、4,7-二氨基-1,1-二甲基茚满、5,7-二氨基-1,1,4-三甲基茚满、5,7-二氨基-1,1,6-三甲基茚满、5,7-二氨基-1,1-二甲基-4-乙基茚满、对苯二胺、间苯二胺、邻苯二胺、3-甲基-1,2-苯二胺、1,2-二氨基乙烷、1,3-二氨基丙烷、1,4-二氨基丁烷、1,5-二氨基戊烷、1,6-二氨基己烷、1,7-二氨基庚烷、1,8-二氨基辛烷、1,9-二氨基壬烷、1,10-二氨基癸烷、1,2-二氨基环己烷、1,4-二氨基环己烷、1,3-环己烷双(甲胺)、5-氨基-1,3,3-三甲基环己烷甲胺、2,5-二氨基三氟甲苯、3,5-二氨基三氟甲苯、1,3-二氨基-2,4,5,6-四氟苯、4,4'-二氨基苯胺、3,4'-二氨基二苯醚、3,3'-二氨基二苯醚、3,3'-二氨基二苯基砜、4,4'-二氨基二苯基砜、4,4'-异亚丙基二苯胺、4,4'-二氨基二苯基甲烷、2,2-双(4-氨基苯基)丙烷、4,4'-二氨基二苯基丙烷、4,4'-二氨基二苯基硫醚、4,4'-二氨基二苯基砜、4-氨基苯基-3-氨基苯甲酸酯、2,2'-二甲基-4,4'-二氨基联苯、3,3'-二甲基-4,4'-二氨基联苯、2,2'-双(三氟甲基)联苯胺、3,3'-双(三氟甲基)联苯胺、2,2-双[4-(4-氨基苯氧基苯基)]六氟丙烷、2,2-双(3-氨基-4-甲基苯基)-六氟丙烷、2,2-双(3-氨基苯基)-1,1,1,3,3,3-六氟丙烷、1,3-双-(4-氨基苯氧基)苯、1,3-双-(3-氨基苯氧基)苯、1,4-双-(4-氨基苯氧基)苯、1,4-双-(3-氨基苯氧基)苯、1-(4-氨基苯氧基)-3-(3-氨基苯氧基)苯、2,2'-双-(4-苯氧基苯胺)异亚丙基、双(对-β-氨基-叔丁基苯基)醚、对-双-2-(2-甲基-4-氨基戊基)苯、对-双(1,1-二甲基-5-氨基戊基)苯、3,3'-二甲基-4,4'-二氨基联苯、4,4'-二氨基二苯甲酮、3'-二氯联苯胺、2,2-双[4-(4-氨基苯氧基)苯基]丙烷、4,4'-[1,3-亚苯基双(1-甲基-亚乙基)]二苯胺、4,4'-[1,4-亚苯基双(1-甲基-亚乙基)]二苯胺、2,2-双[4-(4-氨基苯氧基)苯基]砜、2,2-双[4-(3-氨基苯氧基)苯]、1,4-双(4-氨基苯氧基)苯、1,3-双(4-氨基苯氧基)苯、(1,3'-双(3-氨基苯氧基)苯和9H-芴-2,6-二胺。这些二胺中的任何一种可以单独使用或以任何比例组合使用,只要所得聚酰亚胺聚合物满足本发明的要求即可。
四羧酸二酐单体的实例包括但不限于1-(3',4'-二羧基苯基)-1,3,3-三甲基茚满-5,6-二羧酸二酐、1-(3',4'-二羧基苯基)-1,3,3-三甲基茚满-6,7-二羧酸二酐、1-(3',4'-二羧基苯基)-3-甲基茚满-5,6-二羧酸二酐、1-(3',4'-二羧基苯基)-3-甲基茚满-6,7-二羧酸酐、吡嗪-2,3,5,6-四羧酸二酐、噻吩-2,3,4,5-四羧酸二酐、2,3,5,6-吡啶四羧酸二酐、降冰片烷-2,3,5,6-四羧酸二酐、双环[2.2.2]辛-7-烯-3,4,8,9-四羧酸二酐、四环[4.4.1.02,5.07,10]十一烷-1,2,3,4-四羧酸二酐、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-二苯砜四羧酸二酐、3,3',4,4'-二苯醚四羧酸二酐、2,3,3',4'-二苯醚四羧酸二酐、2,2-[双(3,4-二羧基苯基)]六氟丙烷二酐、乙二醇双(无水偏苯三酸)和5-(2,5-二氧代四氢)-3-甲基-3-环己烯-1,2-二羧酸酐。更优选的四羧酸二酐单体包括2,2-[双(3,4-二羧基苯基)]六氟丙烷二酐、3,3',4,4'-二苯甲酮四羧酸二酐、3,3',4,4'-二苯基砜四羧酸二酐和3,3',4,4'-二苯基醚四羧酸二酐。这些四羧酸二酐中的任何一种都可以单独使用或以任何比例组合使用,只要所得聚酰亚胺聚合物满足本发明的要求即可。
通常,由此形成的聚酰亚胺聚合物可溶于有机溶剂中。在一些实施方案中,聚酰亚胺聚合物在25℃在有机溶剂中的溶解度可为至少约50mg/mL(例如,至少约100mg/mL或至少约200mg/mL)。有机溶剂的实例包括但不限于内酯,诸如γ-丁内酯、ε-己内酯、γ-己内酯和δ-戊内酯;环酮,诸如环戊酮和环己酮;线性酮,诸如甲乙酮(MEK);酯,诸如乙酸正丁酯;酯醇,诸如乳酸乙酯;醚醇,诸如四氢糠醇;二醇酯,诸如丙二醇甲醚乙酸酯;吡咯烷酮,诸如N-甲基吡咯烷酮。
在一些实施方案中,为了合成完全酰亚胺化的聚酰亚胺(PI)聚合物,首先制备聚酰亚胺前体聚合物。在一些实施方案中,PI前体聚合物是聚酰胺酸(PAA)聚合物。在一些实施方案中,PI前体是聚酰胺酯(PAE)聚合物。在一些实施方案中,一种或多种二胺与一种或多种四羧酸二酐在至少一种(例如,两种、三种或更多种)聚合溶剂中组合以形成聚酰胺酸(PAA)聚合物。在一些实施方案中,所形成的PAA聚合物通过化学或热的方式酰亚胺化,以形成PI聚合物。在一些实施方案中,在聚合物合成期间或在聚合物合成之后,通过使用合适的试剂对PAA聚合物进行封端。在一些实施方案中,形成的PAA聚合物被酯化以形成聚酰胺酯(PAE)聚合物。在一些实施方案中,通过四羧酸半酯与一种或多种二胺在至少一种聚合溶剂中的组合形成PAE聚合物。在一些实施方案中,通过使用合适的试剂对PAE聚合物进行封端。在一些实施方案中,封端的PI聚合物由PAA聚合物或含有封端基团的PAE聚合物合成。在一些实施方案中,这种PI聚合物在酰亚胺化后被封端。
在一些实施方案中,将化学酰亚胺化剂(例如,脱水剂)加入PAA聚合物中,以催化聚酰胺酸基团的闭环脱水过程以形成酰亚胺官能团,从而形成PI聚合物。合适的脱水剂的实例包括但不限于三氟甲磺酸、甲磺酸、对甲苯磺酸、乙磺酸、丁磺酸、全氟丁烷磺酸、乙酸酐、丙酸酐和丁酸酐。此外,该脱水过程可以通过进一步加入碱性催化剂来催化。合适的碱性催化剂的实例包括但不限于吡啶、三乙胺、三丙胺、三丁胺、二环己基甲胺、2,6-二甲基吡啶、3,5-二甲基吡啶、甲基吡啶、4-二甲基氨基吡啶(DMAP)等。
合成封端和非封端的PI前体聚合物和PI聚合物的方法是本领域技术人员熟知的。此类方法的实例公开于例如专利号US2,731,447、US3,435,002、US3,856,752、US3,983,092、US4,026,876、US4,040,831、US4,579,809、US4,629,777、US4,656,116、US4,960,860、US4,985,529、US5,006,611、US5,122,436、US5,252,534、US5,4789,15、US5,773,559、US5,783,656、US5,969,055、US9,617,386的美国专利和申请号US20040265731、US20040235992和US2007083016的美国专利申请,其内容通过引用并入到本文中。
用于制备PI聚合物或其前体的聚合溶剂通常是一种或两种或更多种极性非质子溶剂的组合。合适的极性非质子溶剂包括但不限于二甲基甲酰胺(DMF)、二甲基乙酰胺(DMAc)、N-甲酰基吗啉(NFM)、N-甲基吡咯烷酮(NMP)、N-乙基吡咯烷酮(NEP)、二甲基亚砜(DMSO)、γ-丁内酯(GBL)、六甲基磷酸三酰胺(HMPT)、四氢呋喃(THF)、甲基四氢呋喃、1,4-二恶烷及其混合物。
在一些实施方案中,本文所述的聚酰亚胺聚合物的重均分子量(Mw)为至少约5,000道尔顿(例如,至少约10,000道尔顿、至少约20,000道尔顿、至少约25,000道尔顿、至少约30,000道尔顿、至少约35,000道尔顿、至少约40,000道尔顿、或至少约45,000道尔顿)和/或至多约100,000道尔顿(例如,至多约90,000道尔顿、至多约80,000道尔顿、至多约70,000道尔顿、至多约65,000道尔顿、至多约60,000道尔顿、至多约55,000道尔顿、或至多约50,000道尔顿)。在一些实施方案中,聚酰亚胺聚合物的重均分子量(Mw)为约20,000道尔顿至约70,000道尔顿或约30,000道尔顿至约80,000道尔顿。重均分子量可通过凝胶渗透色谱法获得,并使用聚苯乙烯标准计算。
在一些实施方案中,聚酰亚胺(A)的量为形成介电膜的组合物(包括任何溶剂)的总重量的至少约3重量%(例如,至少约6重量%、至少约9重量%、至少约12重量%、或至少约15重量%)和/或至多约40重量%(例如,至多约35重量%、至多约30重量%、至多约25重量%、或至多约20重量%)。在一些实施方案中,聚酰亚胺(A)的量为形成介电膜的组合物中的固体量的至少约10重量%(例如,至少约12.5重量%、至少约15重量%、至少约20重量%、或至少约25重量%)和/或至多约60重量%(例如,至多约55重量%、至多约50重量%、至多约45重量%、至多约40重量%、至多约35重量%、或至多约30重量%)。如本文所用,形成介电膜的组合物中的固体量是指组合物的总重量减去组合物中溶剂的量,或由组合物形成的介电膜的总重量。
用于本发明的含金属的(甲基)丙烯酸酯(MCA)通常与形成介电膜的组合物中的其它成分具有足够的相容性,并且在混合时易于分散或溶解在组合物中。MCA可以作为固体或溶液掺入到形成介电膜的组合物中。通常,含有MCA的组合物在25℃静置至少24小时后不形成相分离(变得明显不均匀)。另外,由含MCA的组合物形成的介电膜通常明显透明且均匀。
用于本发明中的MCA的合适金属原子包括钛、锆、铪和锗。在一些实施方案中,MCA包括至少一个金属原子和至少一个(例如,一个、两个、三个或四个)(甲基)丙烯酸酯基团。优选的MCA含有与每个金属原子连接的三个或四个(甲基)丙烯酸酯基团。合适的MCA的实例包括但不限于四(甲基)丙烯酸钛、四(甲基)丙烯酸锆、四(甲基)丙烯酸铪、钛丁氧基三(甲基)丙烯酸酯、钛二丁氧基二(甲基)丙烯酸酯、钛三丁氧基(甲基)丙烯酸酯、锆丁氧基三(甲基)丙烯酸酯、锆二丁氧基二(甲基)丙烯酸酯、锆三丁氧基(甲基)丙烯酸酯、铪丁氧基三(甲基)丙烯酸酯,铪二丁氧基二(甲基)丙烯酸酯、铪三丁氧基(甲基)丙烯酸酯、钛四(羧乙基(甲基)丙烯酸酯)、锆四(羧乙基(甲基)丙烯酸酯)、铪四(羧乙基(甲基)丙烯酸酯)、钛丁氧基三(羧乙基(甲基)丙烯酸酯)、钛二丁氧基二(羧乙基(甲基)丙烯酸酯)、钛三丁氧基(羧乙基(甲基)丙烯酸酯)、锆丁氧基三(羧乙基(甲基)丙烯酸酯)、锆二丁氧基二(羧乙基(甲基)丙烯酸酯)、锆三丁氧基(羧乙基(甲基)丙烯酸酯)、铪丁氧基三(羧乙基(甲基)丙烯酸酯)、铪二丁氧基二(羧乙基(甲基)丙烯酸酯)或铪三丁氧基(羧乙基(甲基)丙烯酸酯)。通常,MCA的(甲基)丙烯酸酯基团具有足够的反应性,以使MCA能够参与由自由基引起的含MCA的膜的交联或聚合,所述自由基可以由形成介电膜的组合物中存在的一种或多种催化剂产生。交联或聚合可在形成介电膜的组合物中的至少两种MCA之间或至少一种MCA和至少一种非MCA交联剂中发生。在一些实施方案中,MCA是交联剂(例如,当MCA包含两个或更多个(甲基)丙烯酸酯基团时)。在一些实施方案中,MCA是适于聚合或起链终止剂作用的单体(例如,当MCA仅包含一个(甲基)丙烯酸酯基团时)。在一些实施方案中,MCA在由本文所述组合物形成的交联介电膜中不交联(例如,当MCA仅包含一个(甲基)丙烯酸酯基团时)。
在一些实施方案中,所述至少一种MCA的量为形成介电膜的组合物的总重量的至少约0.5重量%(例如,至少约1重量%、至少约2重量%、至少约3重量%、至少约4重量%、或至少约5重量%)和/或至多约20重量%(例如,至多约18重量%、至多约16重量%、至多约14重量%、至多约12重量%、或至多约10重量%)。在一些实施方案中,MCA的量为形成介电膜的组合物中的固体量的至少约1重量%(例如,至少约2重量%、至少约4重量%、至少约6重量%、至少约8重量%、或至少约10重量%)和/或至多约25重量%(例如,至多约20重量%、至多约18重量%、至多约16重量%、至多约14重量%、或至多约12重量%)。
令人惊讶地观察到,当通过使用激光烧蚀工艺图案化由组合物形成的介电膜时,在形成介电膜的组合物中存在至少一种MCA可以使碎屑的产生最小化。
在一些实施方案中,本发明的形成介电膜的组合物可包含至少一种催化剂(例如,引发剂)。当暴露于热源和/或辐射源时,催化剂能够引发交联或聚合反应。
在一些实施方案中,使用的催化剂是光引发剂,其中光引发剂是当暴露于高能辐射时能够产生自由基的化合物。高能辐射的非限制性实例包括电子束、紫外光和X射线。不希望受理论束缚,据信光引发剂引发交联或聚合反应,其涉及MCA化合物的(甲基)丙烯酸酯基团和/或组合物中存在的能够进行交联或聚合反应的其他实体。此类实体的实例包括交联剂(例如,非MCA交联剂)和带有烯基和炔基官能团的聚酰亚胺。
光引发剂的具体实例包括但不限于1,8-辛二酮、1,8-双[9-(2-乙基己基)-6-硝基-9H-咔唑-3-基]-1,8-双(O-乙酰基肟)、2-羟基-2-甲基-1-苯基丙-1-酮、1-羟基环己基苯基酮(来自BASF的Irgacure 184)、1-羟基环己基苯基酮和二苯甲酮的混合物(来自BASF的Irgacure 500)、2,4,4-三甲基戊基氧化膦(来自BASF的Irgacure 1800、1850和1700)、2,2-二甲氧基-2-苯乙酮(来自BASF的Irgacure 651)、双(2,4,6-三甲基苯甲酰基)苯基氧化膦(来自BASF的Irgacure 819)、2-甲基-1-[4-(甲硫基)苯基]-2-吗啉基丙烷-1-酮(来自BASF的Irgacure 907)、(2,4,6-三甲基苯甲酰基)二苯基氧化膦(来自BASF的LucerinTPO)、乙氧基(2,4,6-三甲基苯甲酰基)苯基氧化膦(来自BASF的Lucerin TPO-L)、氧化膦、羟基酮和二苯甲酮衍生物的混合物(来自Arkema的ESACURE KTO46)、2-羟基-2-甲基-1-苯基丙烷-1-酮(来自Merck的Darocur 1173)、NCI-831(ADEKA Corp.)、N-1919(ADEKACorp.)、2-(苯甲酰氧基亚氨基)-1-[4-(苯硫基)苯基]-1-辛酮(OXE-01,购自BASF)、1-(O-乙酰基肟)-1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]乙酮(OXE-02,购自BASF)、二苯甲酮,2-氯噻吨酮、2-甲基噻吨酮、2-异丙基噻吨酮、苯并二甲基缩酮、1,1,1-三氯苯乙酮、二乙氧基苯乙酮、间氯苯乙酮、苯丙酮、蒽醌、二苯并噻吩酮等。
非离子型光引发剂的具体实例包括(5-甲苯磺酰氧基亚氨基-5H-噻吩-2-亚基)-2-甲基苯基-乙腈(来自BASF的Irgacure121)、对甲基苯磺酸苯甲酯、对甲苯磺酸苯偶姻、(对甲苯磺酰氧基)甲基苯偶姻、3-(对甲苯磺酰氧基)-2-羟基-2-苯基-1-苯基丙基醚、N-(对十二烷基苯磺酰氧基)-1,8-萘二甲酰亚胺、N-(苯基-磺酰氧基)-1,8-萘酰亚胺、双(环己基磺酰基)重氮甲烷、1-对甲苯磺酰基-1-环己基羰基重氮甲烷、对甲苯磺酸2-硝基苄酯、对甲苯磺酸2,6-二硝基苄酯、对三氟甲基苯磺酸2,4-二硝基苄酯等。
在一些实施方案中,光敏剂可用于形成介电膜的组合物,其中光敏剂可吸收193nm至405nm波长范围内的光。光敏剂的实例包括但不限于9-甲基蒽、蒽甲醇、苊烯、噻吨酮、甲基-2-萘基酮、4-乙酰基联苯和1,2-苯并芴。
在通过加热引发交联或聚合反应的实施方案中,所用催化剂是热引发剂,其中热引发剂是当暴露于约70℃至约250℃的温度时能够产生自由基的化合物。不希望受理论束缚,据信热引发剂引发交联或聚合反应,其涉及MCA化合物的(甲基)丙烯酸酯基团和/或组合物中存在的能够进行交联或聚合反应的其他实体。此类实体的实例包括交联剂(例如,非MCA交联剂)和带有烯基和炔基官能团的聚酰亚胺。
热引发剂的具体实例包括但不限于过氧化苯甲酰、过氧化环己酮、过氧化月桂酰、过氧化苯甲酸叔戊酯、叔丁基过氧化氢、过氧化二异丙苯、氢过氧化枯烯、过氧化琥珀酸、二(正丙基)过氧二碳酸酯、2,2-偶氮二(异丁腈)、2,2-偶氮二(2,4-二甲基戊腈)、2,2-偶氮二异丁酸二甲酯、4,4-偶氮二(4-氰基戊酸)、偶氮二环己腈、2,2-偶氮双(2-甲基丁腈)等。
在一些实施方案中,两种或更多种催化剂的组合可用于形成介电膜的组合物中。催化剂的组合可以是所有热引发剂、所有光引发剂或热引发剂和光引发剂的组合。
在一些实施方案中,催化剂的量为形成介电膜的组合物的总重量的至少约0.25重量%(例如,至少约0.5重量%、至少约0.75重量%、至少约1.0重量%、或至少约1.5重量%)和/或至多约4.0重量%(例如,至多约3.5重量%、至多约3.0重量%、至多约2.5重量%、或至多约2.0重量%)。在一些实施方案中,催化剂的量为形成介电膜的组合物中的固体量的至少约0.5重量%(例如,至少约1.0重量%、至少约1.5重量%、至少约2.0重量%、或至少约2.5重量%)和/或至多约5.0重量%(例如,至多约4.5重量%、至多约4.0重量%、至多约3.5重量%、或至多约3.0重量%)。
可用于本发明的形成介电膜的组合物的有机溶剂的合适实例包括但不限于γ-丁内酯(GBL)、N-甲基-2-吡咯烷酮(NMP)、二甲基咪唑烷酮、N-甲基己内酰胺、N-甲基丙酰胺、N,N-二甲基乙酰胺(DMAc)、二甲基亚砜(DMSO)、N,N-二甲基甲酰胺(DMF)、N,N-二乙基甲酰胺、二乙基乙酰胺、甲基乙基酮(MEK)、甲基异丁基酮(MIBK)、2-庚酮、环戊酮(CP)、环己酮、乙酸正丁酯(nBA)、丙二醇甲醚乙酸酯(PGMEA)、丙二醇甲醚(PGME)、乳酸乙酯(EL)、乳酸丙酯、3-甲基-3-甲氧基丁醇、四氢化萘、异佛尔酮、乙二醇单丁醚、二乙二醇单乙醚、二乙二醇单乙醚乙酸酯、二乙二醇二甲醚、二乙二醇甲乙醚、三乙二醇单乙醚、二丙二醇单甲醚、3-甲氧基丙酸甲酯、3-乙氧基丙酸乙酯、丙二酸二乙酯、乙二醇1,4:3,6-二脱水山梨醇、正丁醇、2,5-二甲基醚(2,5-二甲基异山梨醇)、1,4:3,6-二脱水山梨醇2,5-二乙基醚(2,5-二乙基异山梨醇)及其混合物。在一些优选的实施方案中,有机溶剂可以是γ-丁内酯(GBL)、环戊酮(CP)、环己酮、正丁醇、N-甲基-2-吡咯烷酮(NMP)、二甲基亚砜(DMSO)或其混合物。这些溶剂可以单独使用或组合使用,只要它完全溶解除了不溶性填料之外的组合物的所有组分,浇铸良好的膜以及不干扰组合反应。
在一些实施方案中,形成介电膜的组合物中有机溶剂的量为形成介电膜的组合物的总重量的至少约35重量%(例如,至少约40重量%、至少约45重量%、至少约50重量%、至少约55重量%、至少约60重量%、或至少约65重量%)和/或至多约98重量%(例如,至多约95重量%、至多约90重量%、至多约85重量%、至多约80重量%、至多约75重量%或至多约70重量%)。
在一些实施方案中,本发明的形成介电膜的组合物还可包含至少一种交联剂(例如,非MCA交联剂)。在一些实施方案中,交联剂含有两个或更多个烯基或炔基。通常,交联剂能够在催化剂存在下进行交联或聚合反应。
在一些实施方案中,至少一种交联剂是至少一种氨基甲酸酯丙烯酸酯低聚物。术语“氨基甲酸酯丙烯酸酯低聚物”是指一类氨基甲酸酯(甲基)丙烯酸酯化合物,其含有氨基甲酸酯键并具有(甲基)丙烯酸酯(例如丙烯酸酯或甲基丙烯酸酯)官能团,例如氨基甲酸酯多(甲基)丙烯酸酯、多氨基甲酸酯(甲基)丙烯酸酯和多氨基甲酸酯多(甲基)丙烯酸酯。氨基甲酸酯(甲基)丙烯酸酯低聚物的类型已经由例如Coady等人的专利号US4,608,409和Chisholm等人的专利号US6,844,950的美国专利描述,其内容通过引用并入本文中。可用于本发明的氨基甲酸酯丙烯酸酯低聚物的具体实例包括但不限于CN9165US、CN9167US、CN972、CN9782、CN9783和CN992。这些和其它氨基甲酸酯丙烯酸酯低聚物可从Arkema(Sartomer)商购获得。
在一些实施方案中,交联剂含有至少两个(甲基)丙烯酸酯基团。在一些实施方案中,交联剂选自由以下组成的组:1,6-己二醇二(甲基)丙烯酸酯、四乙二醇二(甲基)丙烯酸酯、1,12-十二烷二醇二(甲基)丙烯酸酯、1,3-丁二醇二(甲基)丙烯酸酯、1,4-丁二醇二(甲基)丙烯酸酯、环己烷二甲醇二(甲基)丙烯酸酯、聚乙二醇二(甲基)丙烯酸酯、丙氧基化(3)甘油三(甲基)丙烯酸酯、二乙烯基苯、乙氧基化双酚-A-双(甲基)丙烯酸酯、二乙二醇双(烯丙基碳酸酯)、三羟甲基丙烷三(甲基)丙烯酸酯、双三羟甲基丙烷四(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、二季戊四醇五-/六-(甲基)丙烯酸酯、异氰脲酸酯三(甲基)丙烯酸酯、双(2-羟乙基)-异氰脲酸酯二(甲基)丙烯酸酯、1,3-丁二醇三(甲基)丙烯酸酯、1,4-丁二醇三(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、(甲基)丙烯酸酯改性脲醛树脂、(甲基)丙烯酸酯改性三聚氰胺甲醛树脂和(甲基)丙烯酸酯改性纤维素。
在一些实施方案中,形成介电膜的组合物中交联剂的量为组合物总重量的至少约2.5重量%(例如,至少约5重量%、至少约7.5重量%、至少约10重量%、至少约12.5重量%、或至少约15重量%)和/或至多约30重量%(例如,至多约27.5重量%、至多约25重量%、至多约22.5重量%、至多约20重量%、或至多约17.5重量%)。在一些实施方案中,形成介电膜的组合物中交联剂的量为组合物中的固体量的约5重量%(例如,至少约10重量%、至少约15重量%、至少约20重量%、至少约25重量%、或至少约30重量%)和/或至多约60重量%(例如,至多约55重量%、至多约50重量%、至多约45重量%、至多约40重量%、或至多约35重量%)。不希望受理论束缚,据信交联剂可改善由本文所述组合物形成的介电膜的机械性能和耐化学性。
本发明的形成介电膜的组合物可任选地包括其他组分,例如助粘剂、填料、表面活性剂、增塑剂、铜钝化剂、着色剂和染料。
在一些实施方案中,本发明的形成介电膜的组合物还包含一种或多种助粘剂。合适的助粘剂描述于出版物“Silane Coupling Agent”EdwinP.Plueddemann,1982PlenumPress,New York”。助粘剂的种类包括但不限于巯基烷氧基硅烷、氨基烷氧基硅烷、环氧烷氧基硅烷、缩水甘油氧基烷氧基硅烷、巯基硅烷、氰基硅烷和咪唑硅烷。在一些实施方案中,助粘剂包含烷氧基甲硅烷基和含有碳-碳多键的官能团,所述含有碳-碳多键的官能团选自取代或未取代的烯基和取代或未取代的炔基。
如果使用的话,形成介电膜的组合物中任选的助粘剂的量为组合物的总重量的至少约0.3重量%(例如,至少约0.5重量%、至少约0.7重量%、或至少约1重量%)和/或至多约4重量%(例如,至多约3重量%、至多约2重量%、或至多约1.5重量%)。在一些实施方案中,形成介电膜的组合物中任选的助粘剂的量为组合物中的固体量的至少约0.5重量%(例如,至少约1重量%、至少约2重量%、或至少约2.5重量%)和/或至多约8重量%(例如,至多约6重量%、至多约5重量%、至多约4重量%、或至多约3重量%)。
在一些实施方案中,本发明的形成介电膜的组合物还可包含一种或多种填料。在一些实施方案中,填料是无机颗粒。在一些实施方案中,无机颗粒选自由以下组成的组:二氧化硅、氧化铝、二氧化钛、氧化锆、氧化铪、CdSe、CdS、CdTe、CuO、氧化锌、氧化镧、氧化铌、氧化钨、氧化锶、钛酸钙、钛酸钠、硫酸钡、钛酸钡、锆酸钡和铌酸钾。优选地,无机填料为平均尺寸为约0.1-20微米的颗粒形式。在一些实施方案中,填料是有机颗粒,其中有机颗粒不溶于组合物的溶剂中。有机颗粒的实例包括但不限于交联的橡胶颗粒、交联或非交联的聚酰亚胺颗粒、和交联的聚合物颗粒。
可用于本发明的二氧化硅填料可以是亲水的或疏水的。疏水性二氧化硅填料可以通过亲水性、气相二氧化硅的表面改性或通过表面改性的二氧化硅填料的直接形成来制备。表面改性的二氧化硅填料的直接形成通常通过官能硅烷的水解缩合来完成。可用于本发明的表面改性的二氧化硅填料可在其表面上具有反应性和/或无反应性的基团。可用于本发明的填料(例如,二氧化硅填料)具有至多约2微米(例如,至多约1.5微米、至多约1微米、至多约0.75微米、至多约0.5微米、至多约0.25微米或至多约0.2微米)和/或至少约0.1微米(例如,至少约0.2微米、至少约0.3微米、至少约0.5微米、或至少约1微米)的粒度(例如,平均粒度)。填料尺寸分布可以是窄的(例如,基本上是单分散的)或宽的。所需的填料尺寸和分布可通过本领域技术人员已知的许多技术中的任何一种来实现,包括但不限于碾磨、研磨和过滤。在一些实施方案中,二氧化硅填料分散在有机溶剂中。溶剂中的分散可以通过本领域技术人员已知的各种方法完成,包括但不限于介质研磨和高剪切混合。用于二氧化硅填料分散的溶剂没有特别限制。优选的溶剂包括酯、醚、内酯、酮、酰胺和醇。更优选的溶剂包括GBL、环戊酮、环己酮、乳酸乙酯和正丁醇。
在一些实施方案中,如果使用,本发明的形成介电膜的组合物中的填料(例如,二氧化硅填料)的量为组合物总重量的至少约2重量%(例如,至少约4重量%、至少约6重量%、至少约8重量%、或至少约10重量%)和/或至多约20重量%(例如,至多约18重量%、至多约15重量%、或至多约12重量%)。在一些实施方案中,本发明的形成介电膜的组合物中填料(例如,二氧化硅填料)的量为组合物中的固体量的至少约5重量%(例如,至少约10重量%、至少约14重量%、至少约17重量%、或至少约20重量%)和/或至多约40重量%(例如,至多约35重量%、至多约30重量%、或至多约25重量%)。
本发明的形成介电膜的组合物还可任选地含有一种或多种表面活性剂。如果使用表面活性剂,则表面活性剂的量为形成介电膜的组合物的总重量的至少约0.001重量%(例如,至少约0.01重量%或至少约0.1重量%)和/或至多约2重量%(例如,至多约1重量%或至多约0.5重量%)。在一些实施方案中,表面活性剂的量为组合物中的固体量的至少约0.002重量%(例如,至少约0.02重量%或至少约0.2重量%)和/或至多约4重量%(例如,至多约1重量%或至多约0.5重量%)。合适的表面活性剂的实例包括但不限于JP-A-62-36663、JP-A-61-226746、JP-A-61-226745、JP-A-62-170950、JP-A-63-34540、JP-A-7-230165、JP-A-8-62834、JP-A-9-54432和JP-A-9-5988中描述的表面活性剂。
本发明的形成介电膜的组合物可任选地含有一种或多种增塑剂。如果使用,任选的增塑剂的量为形成介电膜的组合物的总重量的至少约1重量%(例如,至少约2重量%或至少约3重量%)和/或至多约10重量%(例如,至多约7.5重量%至多约5重量%)。在一些实施方案中,任选的增塑剂的量为组合物中的固体量的至少约2重量%(例如,至少约4重量%或至少约6重量%)和/或至多约20重量%(例如,至多约14重量%或至多约10%重量)。
本发明的形成介电膜的组合物可任选地含有一种或多种铜钝化剂。铜钝化剂的实例包括三唑化合物、咪唑化合物和四唑化合物。三唑化合物可包括三唑、苯并三唑、取代的三唑和取代的苯并三唑。取代基的实例包括C1-C8烷基、氨基、硫醇、巯基、亚氨基、羧基和硝基。三唑化合物的具体实例包括苯并三唑、1,2,4-三唑、1,2,3-三唑、甲苯基三唑、5-甲基-1,2,4-三唑、5-苯基-苯并三唑、5-硝基-苯并三唑、3-氨基-5-巯基-1,2,4-三唑、1-氨基-1,2,4-三唑、羟基苯并三唑、2-(5-氨基-戊基)-苯并三唑、1-氨基-1,2,3-三唑、1-氨基-5-甲基-1,2,3-三唑、3-氨基-1,2,4-三唑、3-巯基-1,2,4-三唑、3-异丙基-1,2,4-三唑、5-苯硫基-苯并三唑、卤代-苯并三唑(卤代=F、Cl、Br或I)、萘并三唑等。咪唑化合物的实例包括但不限于2-烷基-4-甲基咪唑、2-苯基-4-烷基咪唑、2-甲基-4(5)-硝基咪唑、5-甲基-4-硝基咪唑、4-咪唑甲醇盐酸盐、2-巯基-1-甲基咪唑。四唑化合物的实例包括但不限于1-H-四唑、5-甲基-1H-四唑、5-苯基-1H-四唑、5-氨基-1H-四唑、1-苯基-5-巯基-1H-四唑、5,5'-双-1H-四唑、1-甲基-5-乙基四唑、1-甲基-5-巯基四唑、1-羧甲基-5-巯基四唑等。
在一些实施方案中,如果使用的话,任选的铜钝化剂的量为形成介电膜的组合物的总重量的至少约0.01重量%(例如至少约0.05重量%、至少约0.1重量%或至少约0.5重量%)和/或至多约2重量%(例如,至多约1.5重量%或至多约1重量%)。在一些实施方案中,任选的铜钝化剂的量为组合物中的固体量的至少约0.02重量%(例如,至少约0.1重量%、至少约0.2重量%或至少约1重量%)和/或至多约4重量%(例如,至多约3重量%或至多约2重量%)。
本发明的形成介电膜的组合物可任选地含有一种或多种染料和/或一种或多种着色剂。
在一些实施方案中,聚酰亚胺可以由不包括结构(1)的硅氧烷二胺的二胺制备:
其中R1和R2各自独立地为二价脂族或芳族基团(例如,C1-6二价脂族基团或C6-12二价芳族基团),R3、R4、R5和R6各自独立地为一价脂族或芳族基团(例如,C1-6一价脂族基团或C6-12一价芳族基团),m为1-100的一整数。
结构(III)的硅氧烷二胺单体的实例包括但不限于:
在一些实施方案中,本发明的形成介电膜的组合物可以具体地不包括以下溶剂的一种或多种(如果多于一种,则不包括其任何组合)。这些溶剂可选自由以下组成的组:线性酮,诸如甲乙酮(MEK);酯,诸如乙酸乙酯;酯醇,诸如乳酸乙酯;醚醇,诸如四氢糠醇;和二醇酯,诸如丙二醇甲醚醋酸酯(PGMEA)。
在一些实施方案中,本发明的形成介电膜的组合物可以具体地不包括下列助粘剂的一种或多种(如果多于一种,则不包括其任何组合)。这些助粘剂可选自由以下组成的组:含伯胺的助粘剂(诸如3-氨基丙基三乙氧基硅烷和间氨基苯基三乙氧基硅烷)、含仲胺的助粘剂(诸如N-环己基氨基三甲氧基硅烷)、含叔胺的助粘剂(诸如二乙氨基乙基三乙氧基硅烷)、含尿素的助粘剂(如脲基丙基三甲氧基硅烷)、含有酸酐的助粘剂(诸如3-(三乙氧基甲硅烷基)丙基琥珀酸酐)、含环氧树脂的助粘剂(诸如2-(3,4-环氧环己基)乙基三乙氧基硅烷)、含有异氰酸酯的助粘剂(诸如3-异氰酸基丙基三乙氧基硅烷)和含硫的助粘剂(诸如3-巯基丙基三甲氧基硅烷)。
在一些实施方案中,本发明的形成介电膜的组合物可以具体地不包含一种或多种(如果多于一种,则不包含其任何组合)添加剂组分。这些组分可选自由以下组成的组:非聚酰亚胺聚合物、非交联非聚酰亚胺聚合物、表面活性剂、增塑剂、着色剂、染料、水、氧清除剂、季铵氢氧化物、胺、碱金属和碱土金属碱(如NaOH、KOH、LiOH、氢氧化镁和氢氧化钙)、含氟单体化合物、氧化剂(如过氧化物、过氧化氢、硝酸铁、碘酸钾、高锰酸钾、硝酸、亚氯酸铵、氯酸铵、碘酸铵、过硼酸铵、高氯酸铵、高碘酸铵、过硫酸铵、亚氯酸四甲基铵、氯酸四甲基铵、碘酸四甲基铵、过硼酸四甲基铵、高氯酸四甲基铵、高碘酸四甲基铵、过硫酸四甲基铵、过氧化氢脲和过氧乙酸)、磨料、硅酸盐、腐蚀抑制剂(例如、非唑类腐蚀抑制剂)、胍、胍盐、无机酸(如磺酸、硫酸、亚硫酸、亚硝酸、硝酸、亚磷酸和磷酸)、有机酸(如羟基羧酸和羧酸和多元羧酸)、吡咯烷酮、聚乙烯吡咯烷酮和金属卤化物。
不希望受理论束缚,据信当通过使用激光烧蚀工艺图案化由组合物形成的介电膜时,本发明的形成介电膜的组合物可以使碎屑的产生最小化。因此,当这种组合物用于在半导体衬底上形成导电金属层(例如,铜层)的工艺中时,该工艺不需要在涂覆种子层(例如,包括阻挡层和金属种子层)之前的碎屑去除工艺或预处理工艺。
在一些实施方案中,本发明的特征在于由本文所述的形成介电膜的组合物形成的介电膜。在一些实施方案中,当介电膜尚未通过暴露于辐射源或热源而交联时,介电膜可包括:a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种含金属的(甲基)丙烯酸酯;和c)至少一种催化剂。在一些实施方案中,介电膜还可包含至少一种交联剂(例如以上关于形成介电膜的组合物所述的那些交联剂)。
在一些实施方案中,当通过暴露于辐射源或热源使介电膜交联时,介电膜可包括a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种交联的含金属的(甲基)丙烯酸酯;和c)任选至少一种无机填料。在这样的实施方案中,至少一种完全酰亚胺化的聚酰亚胺聚合物可以是未交联的,或者可以与其自身或与含金属的(甲基)丙烯酸酯交联(例如,当聚合物具有至少一个交联基团时)。
在一些实施方案中,本发明的介电膜在308nm、355nm、365nm或405nm波长的光学吸光度为至少约0.1μm-1(例如,至少约0.5μm-1、至少约1μm-1、至少约2μm-1、至少约3μm-1、至少约5μm-1、至少约7μm-1、或至少约9μm-1)。
在一些实施方案中,本发明的特征在于一种制备干膜结构的方法。该方法包括:
(A)用本文所述的形成介电膜的组合物(例如,含有:a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种含金属的(甲基)丙烯酸酯;c)至少一种催化剂;d)至少一种溶剂;和e)任选的至少一种交联剂的组合物)涂覆载体衬底,以形成涂覆组合物;
(B)干燥涂覆组合物以形成介电膜;和
(C)任选地将保护层施加到介电膜上。在一些实施方案中,载体衬底具有优异的光学透明性,并且对用于在聚合物层中形成浮雕图案的光化辐射基本上是透明的。载体衬底的厚度优选在至少约10μm(例如,至少约15μm、至少约20μm、至少约30μm、至少约40μm、至少约50μm或至少约60μm)至至多约150μm(例如,至多约140μm、至多约120μm、至多约100μm、至多约90μm、至多约80μm、或至多约70μm)的范围内。
在一些实施方案中,载体衬底是单层或多层膜,其可包括一种或多种聚合物(例如,聚对苯二甲酸乙二醇酯)。在一些实施方案中,保护层衬底是单层或多层膜,其可包括一种或多种聚合物(例如,聚乙烯或聚丙烯)。载体衬底和保护层的实例已在例如公开号2016/0313642的美国申请中描述,其内容通过引用并入到本文中。在一些实施方案中,干膜结构中的介电膜尚未暴露于用于例如形成交联膜的辐射源或热源。
在一些实施方案中,干膜的介电膜可以作为能自己立住的介电膜从载体层分离。能自己立住的介电膜是可以在不使用任何支撑层(例如载体层)的情况下保持其物理完整性的膜。在一些实施方案中,能自己立住的介电膜可包括(例如,在交联之前):a)至少一种完全酰亚胺化的聚酰亚胺聚合物;b)至少一种含金属的(甲基)丙烯酸酯(例如,未交联的含金属的(甲基)丙烯酸酯);和c)至少一种催化剂(例如,能够引发聚合反应的催化剂)。在一些实施方案中,能自己立住的介电膜可以暴露于辐射源或热源以形成交联的能自己立住的介电膜。在一些实施方案中,交联的能自己立住的介电膜可包括:a)至少一种完全酰亚胺化的聚酰亚胺聚合物;和b)至少一种交联的含金属的(甲基)丙烯酸酯。在一些实施方案中,在预层压介电膜之后,可以使用真空层压机用平面压缩方法或热辊压缩方法在约50℃至约140℃将能自己立住的介电膜(交联或未交联)层压到衬底(例如,半导体衬底)上。
在一些实施方案中,在预层压干膜结构的介电膜之后,可以使用真空层压机用平面压缩方法或热辊压缩方法在约60℃至约140℃的温度将干膜结构的介电膜层压到衬底(例如,半导体衬底)上。当采用热辊层压时,可以将干膜结构放入热辊层压机中,可选的保护层可以从介电膜/载体衬底上剥离,并且可以使用辊以及热和压力使介电膜接触衬底并层压到衬底上,以形成包含衬底、介电膜和载体衬底的制品。然后可以将介电膜暴露于辐射源或热源(例如,通过载体衬底)以形成交联膜。在一些实施方案中,可以在将介电膜暴露于辐射源或热源之前移除载体衬底。
在一些实施方案中,通过包含以下步骤的方法由本发明的形成介电膜的组合物制备介电膜:
a)在衬底上涂覆本文所述的形成介电膜的组合物以形成介电膜;
b)任选地在约50℃至约150℃的温度烘烤膜约20秒至约240秒;以及
c)将介电膜暴露于辐射源或热源。
用于制备介电膜的涂覆方法包括但不限于旋涂(spin coating)、喷涂、辊涂、棒涂、旋涂(rotation coating)、狭缝涂覆、压缩涂覆、幕式淋涂(curtain coating)、模涂(die coating)、线棒涂、刮刀涂覆和干膜的层压。半导体衬底可以具有圆形形状,诸如晶圆,或者可以是面板。在一些实施方案中,半导体衬底可以是硅衬底、铜衬底、铝衬底、氧化硅衬底、氮化硅衬底、玻璃衬底、有机衬底、覆铜层压板或介电材料衬底。
不希望受理论束缚,据信本发明的介电膜可具有相对低的CTE。在一些实施方案中,本发明的介电膜可具有在50-150℃的温度范围内测量的至多约100ppm/℃(例如,至多约95ppm/℃、至多约90ppm/℃、至多约85ppm/℃、至多约80ppm/℃、至多约75ppm/℃、至多约70ppm/℃、至多约65ppm/℃、至多约60ppm/℃、至多约55ppm/℃、或至多约50ppm/℃)和至少约15ppm/℃(例如,至少约20ppm/℃、至少约30ppm/℃、或至少40ppm/℃)的CTE。
本发明的介电膜的膜厚度没有特别限制。在一些实施方案中,介电膜的膜厚度为至少约3微米(例如,至少约4微米、至少约5微米、至少约7微米、至少约10微米、至少约15微米、至少约20微米、或至少约25微米)和/或至多约100微米(例如,至多约80微米、至多约60微米、至多约50微米、至多约40微米、或至多约30微米)。
在一些实施方案中,介电膜可具有相对小的膜厚度(例如,至多约5微米、至多约4微米、或至多约3微米)。
然后可以将介电膜暴露于辐射源或热源(例如,以形成交联膜)。用于辐射曝光的辐射的非限制性实例包括电子束、紫外光和X射线,优选紫外光。通常,可以使用低压汞灯、高压汞灯、超高压汞灯或卤素灯作为辐射源。曝光剂量没有特别限制,本领域技术人员可以容易地确定适当的量。在一些实施方案中,曝光剂量为至少约100mJ/cm2(例如,至少约200mJ/cm2、或至少约500mJ/cm2)且至多约2,000mJ/cm2(例如,至多约1,500mJ/cm2或至多约1,000mJ/cm2)。如果介电膜暴露于热,则加热温度为至少约70℃(例如,至少约100℃、至少约130℃、或至少约160℃)和/或至多约250℃(例如,至多约220℃、至多约200℃、或至多约180℃)。加热时间为至少约10分钟(例如,至少约20分钟、至少约30分钟、至少约40分钟、或至少约50分钟)和/或至多约5小时(例如,至多约4小时、至多约3小时、至多约2小时,或至多约1小时)。
在一些实施方案中,本发明的特征在于一种用于沉积金属层(例如,以产生嵌入的铜迹线结构)的方法,其包括以下步骤:
a)在衬底上沉积本发明的形成介电膜的组合物以形成介电膜;
b)将介电膜暴露于辐射源或热源;
c)图案化该膜(例如,通过激光烧蚀工艺)以形成具有开口的图案化的介电膜;和
d)将金属(例如,导电金属)沉积到介电膜中的至少一个开口中。
步骤a)和b)可以与前面讨论的相同。
可以通过激光烧蚀工艺获得本发明中描述的图案化结构。使用准分子激光束的直接激光烧蚀工艺通常是干燥的、一步材料去除以在介电膜中形成开口(或图案)。在一些实施方案中,激光的波长为351nm或更小(例如,351nm、308nm、248nm或193nm)。在一些实施方案中,激光的波长为308nm或更小。合适的激光烧蚀工艺的实例包括但不限于专利号US7,598,167、US6,667,551和US6,114,240的美国专利中描述的方法,其内容通过引用并入本文中。使用常规介电膜的激光烧蚀工艺产生大量碎屑。去除这种烧蚀碎屑通常需要通过化学和/或等离子体处理进行额外的清洁工艺步骤,这增加了该工艺的复杂性和成本。本发明的一个重要特征是当由本发明的组合物制备的介电膜通过激光烧蚀工艺图案化时,很少或没有形成碎屑,这导致较少的工艺复杂性和较低的成本。描述碎屑水平的一种方法是使用1至5的等级,其中1表示最少量的碎屑(无碎屑),5表示通过激光烧蚀工艺产生的最大碎屑量。如以下实施例中所示,由本发明的形成介电膜的组合物制备的介电膜的激光烧蚀工艺产生的碎屑为至多3(例如,至多2或至多1)。
本发明的一些实施方案描述了在半导体衬底上沉积金属层(例如,导电铜层以产生嵌入的铜迹线结构)的工艺。在一些实施方案中,为了实现这一点,首先将与图案化的介电膜共形的种子层沉积在图案化的介电膜上(例如,膜的开口外部)。种子层可包含阻挡层和金属种子层(例如,铜种子层)。本发明的一个重要方面是阻挡层和金属种子层可以沉积在图案化的介电膜上(膜的开口内部或膜的开口外部),而不需要使用预处理工艺(例如,通过应用化学处理,应用等离子体处理,或使用外部粘合剂层)以确保介电膜和种子层之间的良好粘合。在一些实施方案中,通过使用能够防止导电金属(例如,铜)通过介电层扩散的材料来制备阻挡层。可用于阻挡层的合适材料包括但不限于钽(Ta)、钛(Ti)、氮化钽(TiN)、氮化钨(WN)和Ta/TaN。形成阻挡层的合适方法是溅射(例如,PVD或物理气相沉积)。溅射沉积作为金属沉积技术具有一些优点,因为它可以用于以高沉积速率沉积许多导电材料,并具有良好的均匀性和低拥有成本。传统的溅射填充对于较深、较窄(高纵横比)的特征产生相对差的结果。通过准直溅射的通量改善了溅射沉积的填充因子。通常,这是通过在靶和衬底之间插入具有六边形单元阵列的准直仪板来实现的。
该工艺的下一步是金属种子沉积。可以在阻挡层的顶部形成薄金属(例如,诸如铜的导电金属)种子层,以改善在后续步骤中形成的金属层(例如,铜层)的沉积。
该工艺的下一步骤是在图案化的介电膜的开口中的金属种子层的顶部沉积导电金属层(例如,铜层),其中金属层足够厚以填充图案化的介电膜中的开口。填充图案化的介电膜中的开口的金属层可以通过电镀(例如无电电镀或电解电镀)、溅射、等离子体气相沉积(PVD)和化学气相沉积(CVD)来沉积。电化学沉积通常是施加铜的优选方法,因为它比其他沉积方法更经济,并且可以完美地将铜填充到互连特征中。铜沉积方法通常应满足半导体工业的严格要求。例如,铜沉积物应该是均匀的并且能够完美地填充器件的小互连特征,例如,具有100nm或更小的开口。例如,在专利号为US5,891,804(Havemann等人)、US6,399,486(Tsai等人)、US7,303,992(Paneccasio等人)的美国专利中描述了该技术,其内容通过引用并入本文中。
在一些实施方案中,图案化的介电膜包括至少一个具有至多约10微米(例如,至多约9微米、至多约8微米、至多约7微米、至多约6微米、至多约5微米、至多约4微米、至多约3微米、至多约2微米或至多约1微米)的特征尺寸(例如,宽度)的元件。本发明的一个重要方面是,由本文所述的形成介电膜的组合物制备的介电膜能够通过激光烧蚀工艺产生具有至多约3微米(例如,至多2微米或至多1微米)的特征尺寸的图案。
在一些实施方案中,本发明的图案化的介电膜的特征(例如,最小特征)的纵横比(高度与宽度的比率)为至少约1/3(例如,至少约1/2、至少约1/1、至少约2/1、至少约3/1、至少约4/1、或至少约5/1)。
在一些实施方案中,沉积导电金属层的工艺还包括去除富余(overburden)的导电金属或去除种子层(例如,阻挡层和金属种子层)。本发明方法的一个独特方面是导电金属层的富余或种子层被最小化,并且可以通过相对简单的方法,例如湿法蚀刻,除去。在一些实施方案中,导电金属层(例如,铜层)的富余为至多约3微米(例如,至多约2.8微米、至多约2.6微米、至多约2.4微米、至多约2.2微米、至多约2.0微米或至多约1.8微米)和至少约0.4微米(例如,至少约0.6微米、至少约0.8微米、至少约1微米、至少约1.2微米、至少约1.4微米或至少约1.6微米)。用于除去富余的铜的铜蚀刻剂的实例包括含有氯化铜和盐酸的水溶液或含有硝酸铁和盐酸的含水混合物。其他合适的铜蚀刻剂的实例包括但不限于专利号为US4,784,785、US3,361,674、US3,816,306、US5,524,780、US5,650,249、US5,431,776和US5,248,398的美国专利中以及申请号为US2017175274的美国申请中描述的铜蚀刻剂,其内容通过引入并入本文中。
另外,还可以通过湿法蚀刻去除种子层(例如,阻挡层和金属种子层)。用于去除钛阻挡层的合适钛蚀刻剂的实例包括但不限于氢氟酸、和硝酸与氢氟酸的组合。其他合适的钛蚀刻剂的实例包括但不限于专利号为US4,540,465和US8,801,958的美国专利中描述的钛蚀刻剂,其内容通过引用并入本文。用于去除钽阻挡层的钽蚀刻剂的实例包括但不限于氢氧化钠/过氧化氢的水溶液和氢氧化钾/过氧化氢的水溶液。
图1是示出用于在图案化的介电膜上沉积导电金属(例如,铜)的常规工艺的说明性方案。在步骤100中,将常规介电膜组合物沉积在半导体衬底上。在步骤110中,通过使用激光烧蚀工艺图案化介电膜。在步骤120中,去除在步骤110期间产生的碎屑(例如,通过使用清洁剂或碎屑去除剂的化学处理)。在步骤130中示出了用于改善典型介电膜和种子层(例如,包括阻挡层和种子层)之间的粘附性的预处理工艺。为了确保介电膜和种子层之间的良好粘附性,需要涉及化学处理或等离子体处理或施加外部助粘剂的预处理过程。例如,通常采用利用高锰酸钾和氢氧化钠溶液加热介电膜的去污方法来改善介电膜与种子层的粘附性。接下来,在步骤140中沉积种子层,然后在步骤150中沉积导电金属。在步骤160中进行化学机械抛光(CMP)以去除任意富余的导电金属。最后,在步骤170中,进行CMP后清洁以获得具有嵌入的导电金属迹线的半导体结构。
图2是示出本发明的示例性发明方法的说明性方案。如图2所示,在步骤200中,可通过在半导体衬底上沉积本文所述的形成介电膜的组合物来形成本发明的介电膜。在步骤210中,可以通过激光烧蚀工艺对该涂覆的介电膜进行图案化,其产生很少碎屑或没有产生碎屑。种子层(例如,包括阻挡层和种子层)可以直接沉积在介电膜上,而无需在步骤220中进行任何碎屑去除工艺或任何预处理工艺,然后在步骤230中进行导电金属(例如铜)沉积。最后,在步骤240中,可以通过执行湿法蚀刻工艺以去除任意富余的导电金属或种子层来完成该工艺,以获得具有嵌入的导电金属迹线的半导体结构。
在一些实施方案中,本发明的特征在于一种三维物体,其包含通过本文所述的方法形成的至少一个图案化膜。在一些实施方案中,三维物体可包括至少两个堆叠体(stack)(例如,至少三个堆叠体)中的图案化膜。这种物体的实例包括半导体衬底、用于电子器件的柔性膜、线隔离、线涂层、线漆或着墨衬底。在一些实施方案中,本发明的特征在于包括这些三维物体中的一个或多个半导体器件。这种半导体器件的实例包括集成电路、发光二极管、太阳能电池和晶体管。
本文引用的所有出版物(例如,专利、专利申请公开和文章)的内容通过引用整体并入本文。
参考以下实施方案更详细地说明本发明,这些实施方案用于说明目的,不应解释为限制本发明的范围。
实施例
除非另有说明,否则列出的任何百分比均以重量计(重量%)。
合成例1(P-1)
6FDA/DAPI聚酰亚胺的制备
在25℃将固体4,4'-(六氟异亚丙基)双(邻苯二甲酸酐)(6FDA)(2.370kg,5.33mol)加入到NMP(9.86kg)中的1-(4-氨基苯基)-1,3,3-三甲基茚满-5胺(也称为4,4'-[1,4-亚苯基-双(1-甲基亚乙基)]二苯胺(DAPI))(1.473kg,5.51mol)的溶液中。将反应温度升至40℃并使混合物反应6小时。然后,加入乙酸酐(1.125kg)和吡啶(0.219kg),将反应温度升至100℃并允许反应进行12小时。
将上述反应混合物冷却至室温并转移至配备有机械搅拌器的较大容器中。将反应溶液用乙酸乙酯稀释,并用水洗涤1小时。停止搅拌后,使混合物不受干扰地静置。一旦发生相分离,就除去水相。用乙酸乙酯和丙酮的混合物稀释有机相,并用水洗涤两次。所有洗涤中使用的有机溶剂(乙酸乙酯和丙酮)和水的量示于表1中。
表1
洗涤1 | 洗涤2 | 洗涤3 | |
乙酸乙酯(kg) | 20.5 | 4.1 | 4.1 |
丙酮(kg) | --- | 2.3 | 2.3 |
水(kg) | 22.0 | 26.0 | 26.0 |
向洗涤的有机相中加入环戊酮(10.5kg),通过真空蒸馏浓缩溶液,得到聚合物溶液P-1。最终聚合物的固含量%为32.96%,通过GPC测得的重均分子量(Mw)为49,200道尔顿。
制备形成介电膜的组合物的一般程序
通过机械搅拌聚合物(P-1)、适量甲基丙烯酰氧基丙基三甲氧基硅烷、NCI-831(商品名,可从ADEKA公司获得)、钛四(羧乙基丙烯酸酯)(MCA,正丁醇中60重量%)、二氧化硅、环己酮和交联剂的混合物制备实施例1-6和对比例1的形成介电膜的组合物。在机械搅拌24小时后,无需过滤即可使用该溶液。这些实施方案的组成如表2所示。
表2
*聚酰亚胺聚合物、MCA和二氧化硅的量为100%固体。
**交联剂1(CL-1)是CN 992(商品名,可从Arkema-Sartomer获得),交联剂2(CL-2)是四甘醇二丙烯酸酯,交联剂3(CL-3)是三羟甲基丙烷三丙烯酸酯。
激光烧蚀工艺的一般程序
将每种形成介电膜的组合物旋涂在硅晶圆上,并使用热板在95℃烘烤10分钟以形成涂层。然后用宽波段UV曝光工具(Carl Süss MA-56)以500mJ/cm2对薄膜进行泛光曝光,并在170℃烘烤2小时,以形成厚度为约6微米至9微米的膜。通过使用XeCl激光器以308nm的波长、100Hz的频率通过激光烧蚀工艺对膜进行图案化。对于每种情况通过激光烧蚀工艺产生的碎屑示于表3中的实施例7-12和对比例2中。
表3
在实施例7-12中,实施例1至6的组合物(其全部具有完全酰亚胺化的聚酰亚胺聚合物和MCA)在激光烧蚀工艺后产生很少碎屑或没有产生碎屑(即,碎屑等级为3或更小)。相反,在对比例2中,比较例1的组合物(其是常规的形成介电膜的组合物,不包含MCA)在激光烧蚀工艺之后产生大量碎屑(即碎屑等级为5)。
在表3中,聚酰亚胺聚合物和MCA的量基于这两种化合物在总固体中的百分比计算。总固体的重量定义为形成介电膜的组合物的总重量减去该组合物的溶剂的总重量。
实施例13:激光烧蚀和阻挡层的沉积
实施例2的形成介电膜的组合物的激光烧蚀产生6.2微米膜上的2×2微米(线/间距)的分辨率(例如,纵横比=6.2/2或3.1)。由于在激光烧蚀工艺中形成很少的碎屑或没有形成碎屑,因此在沉积阻挡层之前不需要碎屑去除步骤或预处理过程。
使用溅射技术在图案化的膜的顶部沉积阻挡层(钛)。使用Denton VacuumDesktop装置以56mA的电流进行沉积。在16分钟内形成厚度为26nm的钛阻挡层。
实施例14:铜种子层的沉积
通过使用相同的溅射工具将铜种子层沉积在上述阻挡层的顶部。在50mA的电流下,在60分钟内形成厚度为420nm的铜种子层。
实施例15:铜层的沉积
在为不同尺寸的晶圆设计的电镀单元中进行电镀。整流器形式的电源(其将交流电转换为调节的低压DC电流)提供必要的电流。在电镀之前,将上面获得的工件(晶圆)用10%H2SO4清洗,然后用去离子水冲洗。将浸入电镀浴(主要成分:3%甲磺酸和5%CuSO4·5H2O,在去离子水中作为电解质)中的电极连接到DC电流源的输出端。待电镀的晶圆充当带负电的阴极。带正电的阳极完成电路。电镀浴保持在25℃,同时电解液以6加仑/分钟的速率再循环。为了保持铜沉积的均匀性,将电池设计成具有适当插入物的挡板。当保持4.4安培的电流和8.8伏的电压时,铜以每分钟1微米的速率沉积。铜富余为2微米。
实施例16:去除铜富余和钛阻挡层
通过首先制备90%去离子水和10%氯化铜的混合物,然后加入盐酸将pH调节至1来制备铜蚀刻剂。将上面获得的晶圆浸入铜蚀刻剂中,使得在20分钟后在室温除去2微米的铜富余。通过混合98.994%去离子水、1%氢氟酸和0.006%聚乙烯亚胺(MW为200道尔顿)来制备钛蚀刻剂。将上面获得的晶圆浸入钛蚀刻剂中,使得在室温在1分钟内除去阻挡层(26nm)。获得具有嵌入的铜迹线结构的晶圆。
对比例3:碎屑清除
由对比例1的组合物形成的介电膜的激光烧蚀产生11微米膜上的8×8微米(线/间距)的分辨率(例如,纵横比=11/8或1.4)。产生了大量碎屑。因此,在阻挡层沉积之前,必须除去碎屑。使用碎屑清除组合物,其由2.5重量%的四甲基氢氧化铵(TMAH)、7.5重量%的去离子水、0.5重量%的羟胺硫酸盐、4.3重量%的单甲醇胺、85重量%的四氢糠醇和0.2重量%的5-甲基-1H-苯并三唑组成。将该碎屑去除组合物加热至60℃并通过将晶圆浸入碎屑去除组合物中5分钟来处理晶圆。用水洗涤晶圆,然后干燥。在这种处理后,碎屑被完全除去。
对比例4:阻挡层的沉积
使用溅射技术在对比例3的图案化膜的顶部沉积阻挡层(钛)。使用Denton VacuumDesktop装置以56mA的电流进行沉积。在16分钟内形成厚度为26nm的钛阻挡层。
对比例5:铜种子层的沉积
通过使用相同的溅射工具将铜种子层沉积在上述阻挡层的顶部。在60分钟内,在50mA的电流下形成厚度为420nm的铜种子层。
对比例6:铜层的沉积
除了更长的时间之外,以与实施例15中所述相同的方式进行电镀。铜富余为20微米。
对比例7:通过CMP和CMP后清洗去除铜富余和钛阻挡层
通过CMP工艺去除铜富余。在Mirra AMAT抛光机上使用铜块浆料(copper bulkslurry),浆料流速为175mL/min。CMP工艺的总时间为10分钟。完成该抛光步骤后,在酸性清洁剂中清洁晶圆,去除粘附在晶圆表面上的有机残留物和颗粒。
接下来,用铜阻挡层浆料去除钛阻挡层,铜阻挡层浆料比块浆料更受机械驱动,使得能够有效地去除该层。在第二酸性清洁器中清洁晶圆,去除粘附在晶圆表面上的有机残留物和颗粒。
实施例17:实施例1的形成介电膜的组合物的光学吸光度测量
将实施例1的形成介电膜的组合物旋涂在厚度为3.0μm的透明4”玻璃晶圆的顶部上,并在95℃软烘烤180秒。通过使用波长范围为300至405nm的CARY 400 Conc紫外-可见分光光度计测量该能自己立住的干膜的吸光度。在308nm处该膜的吸光度为0.383μm-1,在355nm处为0.125μm-1,在365nm处为0.127μm-1,在405nm处为0.058μm-1。
实施例18:形成介电膜的组合物
通过使用339.00g聚合物(P-1)、18.00g甲基丙烯酰氧基丙基三甲氧基硅烷、10.80g OXE-01(商品名,可从BASF SE获得)、114.00g钛四(羧乙基丙烯酸酯)(正丁醇中60重量%)、340.11克环己酮、126.00克购自Arkema-Sartomer的四甘醇二丙烯酸酯和252.0克氨基甲酸酯丙烯酸酯(CN992,商品名,购自Arkema-Sartomer)制备实施例18的形成介电膜的组合物。在机械搅拌24小时后,使用0.2微米过滤器过滤组合物。
实施例19:干膜实施例1(DF-1)
使用线速度为2英尺/分钟(60厘米/分钟)、具有30微米的微细间隙的来自Fujifilm USA(Greenwood,SC)的狭缝式挤压涂覆机(slot die coater),将实施例18的经过滤的形成介电膜的组合物施加到宽度为20.2英寸、厚度为35微米、用作载体衬底的聚对苯二甲酸乙二醇酯(PET)膜(Hostaphan3915,由Mitsubishi Polyester Film,Inc.制造)上,并在197°F干燥,得到厚度约为10.0微米的介电层。在该介电层上,通过辊压缩铺设宽度为20.2英寸、厚度为20微米的双轴取向聚丙烯薄膜(BOPP,由Mirwec Film Inc.,Bloomington,IN制造,商品名为BOPLON)作为保护层。
实施例20:形成介电膜的组合物
通过使用470.98g聚合物(P-1)、15.00g甲基丙烯酰氧基丙基三甲氧基硅烷、9.00gNCI-831(商品名,可从ADEKA公司获得)、175.00g钛四(羧乙基丙烯酸酯)(在正丁醇中60重量%)、289.04克环己酮、141.00克购自Arkema-Sartomer的四甘醇二丙烯酸酯、750克分散在环己酮中的20%二氧化硅和150.00克聚氨酯丙烯酸酯(CN 992,商品名,可从Arkema-Sartomer获得)制备实施例20的形成介电膜的组合物。在机械搅拌24小时后,无需过滤即可使用该溶液。
实施例21:干膜实施方案2(DF-2)
使用线速度为2英尺/分钟(60cm/分钟)、具有30微米的微细间隙的来自FujifilmUSA(Greenwood,SC)的狭缝裸片涂覆机,将实施例20的未过滤的形成介电膜的组合物施加到宽度为20.2英寸、厚度为35微米、用作载体衬底的聚对苯二甲酸乙二醇酯(PET)膜(Hostaphan 3915,由Mitsubishi Polyester Film,Inc制造)上,并在197°F干燥,得到厚度约为10.0微米的介电层。在该聚合物层上,通过辊压缩铺设宽度为20.2英寸、厚度为20微米的双轴取向聚丙烯薄膜(BOPP,由Mirwec Film Inc.,Bloomington,IN制造,商品名为BOPLON)作为保护层。
预见实施例22:形成介电膜的组合物
调配物实施例22通过使用28.00g聚合物(Poly-1)、46.88g环戊酮、80.00g环己酮、0.84g N-(3-三甲氧基硅丙基)吡咯、1.40g 1-(O-乙酰氧肟)-1-[9-乙基-6-(2-甲基苯甲酰基)-9H-咔唑-3-基]乙酮(OXE-02,购自BASF)、6.20g丙烯酸四羧酸乙酯、11.00g具有中等尺寸0.45微米的二氧化钛、14克三乙二醇二甲基丙烯酸酯、17.50克CN992(购自Sartomer)、0.84克在环戊酮中的0.05%Polyfox 6320溶液和0.07克对苯醌制备。在机械搅拌24小时后,无需过滤即可使用该制剂。
预见实施例23:形成介电膜的组合物
通过使用26.00g聚合物(Poly-1)、47.00g环戊酮、75.00g环己酮、0.80g N-(3-三乙氧基硅丙基)-4,5-二氢咪唑、1.50g过氧化苯甲酰、7.50g锆丁氧基三(甲基)丙烯酸酯、17.0g四甘醇二丙烯酸酯(SR-209,购自Sartomer)、14.00g季戊四醇三丙烯酸酯、0.72g环戊酮中的0.05%Polyfox6320溶液和0.05g对苯醌制备制剂实施例23。在机械搅拌30小时后,无需过滤即可使用该制剂。
Claims (45)
1.一种形成介电膜的组合物,包含:
a)至少一种完全酰亚胺化的聚酰亚胺聚合物;
b)至少一种含金属的(甲基)丙烯酸酯;
c)至少一种催化剂;和
d)至少一种溶剂。
2.根据权利要求1所述的组合物,其中,所述至少一种含金属的(甲基)丙烯酸酯的金属原子选自由钛、锆、铪和锗组成的组。
3.根据权利要求1所述的组合物,其中,所述至少一种含金属的(甲基)丙烯酸酯包含至少一个金属原子和至少一个(甲基)丙烯酸酯基团。
4.根据权利要求1所述的组合物,其中,所述至少一种含金属的(甲基)丙烯酸酯包括四(甲基)丙烯酸钛、四(甲基)丙烯酸锆、四(甲基)丙烯酸铪、钛丁氧基三(甲基)丙烯酸酯、钛二丁氧基二(甲基)丙烯酸酯、钛三丁氧基(甲基)丙烯酸酯、锆丁氧基三(甲基)丙烯酸酯、锆二丁氧基二(甲基)丙烯酸酯、锆三丁氧基(甲基)丙烯酸酯、铪丁氧基三(甲基)丙烯酸酯、铪二丁氧基二(甲基)丙烯酸酯、铪三丁氧基(甲基)丙烯酸酯、钛四(羧乙基(甲基)丙烯酸酯)、锆四(羧乙基(甲基)丙烯酸酯)、铪四(羧乙基(甲基)丙烯酸酯)、钛丁氧基三(羧乙基(甲基)丙烯酸酯)、钛二丁氧基二(羧乙基(甲基)丙烯酸酯)、钛三丁氧基(羧乙基(甲基)丙烯酸酯)、锆丁氧基三(羧乙基(甲基)丙烯酸酯)、锆二丁氧基二(羧乙基(甲基)丙烯酸酯)、锆三丁氧基(羧乙基(甲基)丙烯酸酯)、铪丁氧基三(羧乙基(甲基)丙烯酸酯)、铪二丁氧基二(羧乙基(甲基)丙烯酸酯)、或铪三丁氧基(羧乙基(甲基)丙烯酸酯)。
5.根据权利要求1所述的组合物,其中,所述至少一种含金属的(甲基)丙烯酸酯的量为所述组合物的0.5重量%至20重量%。
6.根据权利要求1所述的组合物,其中,所述至少一种完全酰亚胺化的聚酰亚胺聚合物的量为所述组合物的3重量%至40重量%。
7.根据权利要求1所述的组合物,其中,所述至少一种催化剂包括光引发剂或热引发剂。
8.根据权利要求1所述的组合物,其中,所述至少一种催化剂的量为所述组合物的0.25重量%至4重量%。
9.根据权利要求1所述的组合物,其中,所述至少一种溶剂的量为所述组合物的35重量%至98重量%。
10.根据权利要求1所述的组合物,还包含至少一种交联剂。
11.根据权利要求10所述的组合物,其中,所述交联剂包含两个或更多个烯基或炔基。
12.根据权利要求1所述的组合物,还包含至少一种填料。
13.根据权利要求12所述的组合物,其中,所述至少一种填料包含选自以下组成的组的无机颗粒:二氧化硅、氧化铝、二氧化钛、氧化锆、氧化铪、CdSe、CdS、CdTe、CuO、氧化锌、氧化镧、氧化铌、氧化钨、氧化锶、钛酸钙、钛酸钠、硫酸钡、钛酸钡、锆酸钡和铌酸钾。
14.根据权利要求1所述的组合物,其中,所述组合物形成介电膜,当通过激光烧蚀工艺图案化所述介电膜时,所述介电膜不产生碎屑。
15.一种介电膜,由权利要求1所述的组合物形成。
16.一种介电膜,包含:
a)至少一种完全酰亚胺化的聚酰亚胺聚合物;
b)至少一种含金属的(甲基)丙烯酸酯;和
c)至少一种催化剂。
17.根据权利要求16所述的介电膜,其中,所述介电膜是能自己立住的介电膜。
18.一种用于沉积导电金属层的方法,包括:
a)将权利要求1所述的组合物沉积在衬底上以形成介电膜;
b)将所述介电膜暴露于辐射源或热源;
c)图案化所述介电膜以形成具有开口的图案化的介电膜;
d)在所述图案化的介电膜上沉积种子层;以及
e)在所述图案化的介电膜的至少一个开口中沉积导电金属层。
19.根据权利要求18所述的方法,还包括:
去除富余的导电金属或去除所述种子层。
20.根据权利要求19所述的方法,其中,去除所述富余的导电金属或去除所述种子层通过湿法蚀刻进行。
21.根据权利要求18所述的方法,其中,将所述介电膜暴露于辐射源或热源包括在70℃至250℃的温度加热所述介电膜。
22.根据权利要求18所述的方法,其中,图案化所述介电膜通过激光烧蚀工艺进行。
23.根据权利要求22所述的方法,其中,所述激光烧蚀工艺不产生碎屑。
24.根据权利要求18所述的方法,其中,所述图案化的介电膜包括至少一种具有至多3微米的特征尺寸的元件。
25.根据权利要求18所述的方法,其中,所述导电金属层包含铜。
26.根据权利要求19所述的方法,其中,所述富余的导电金属具有至多2微米的厚度。
27.根据权利要求18所述的方法,其中,所述种子层在不使用碎屑去除工艺或预处理工艺的情况下被沉积。
28.根据权利要求18所述的方法,其中,所述方法不包括用于处理导电金属富余的化学机械平坦化工艺或化学机械平坦化后清洁工艺。
29.一种三维物体,通过权利要求18所述的方法形成。
30.一种半导体器件,包括权利要求29所述的三维物体。
31.根据权利要求30所述的半导体器件,其中,所述半导体器件是集成电路、发光二极管、太阳能电池或晶体管。
32.一种用于制备干膜结构的方法,包括:
(A)用权利要求1所述的形成介电膜的组合物涂覆载体衬底以形成涂覆组合物;
(B)干燥所述涂覆组合物以形成介电膜;以及
(C)任选地在所述介电膜上施加保护层。
33.一种用于沉积导电金属层的方法,包括:
a)在衬底上形成权利要求16所述的介电膜;
b)将所述介电膜暴露于辐射源或热源;
c)图案化所述介电膜以形成具有开口的图案化的介电膜;
d)在所述图案化的介电膜上沉积种子层;以及
e)在所述图案化的介电膜的至少一个开口中沉积导电金属层,其中,沉积导电金属层形成具有至多2微米的厚度的导电金属富余。
34.根据权利要求33所述的方法,还包括去除所述导电金属富余或去除所述种子层。
35.根据权利要求34所述的方法,其中,去除所述导电金属富余或去除所述种子层通过湿法蚀刻进行。
36.根据权利要求33所述的方法,其中,将所述介电膜暴露于辐射源或热源包括在70℃至250℃的温度加热所述介电膜。
37.根据权利要求33所述的方法,其中,图案化所述介电膜通过激光烧蚀工艺进行。
38.根据权利要求37所述的方法,其中,所述激光烧蚀工艺不产生碎屑。
39.根据权利要求33所述的方法,其中,所述图案化的介电膜包括至少一种具有至多3微米的特征尺寸的元件。
40.根据权利要求33所述的方法,其中,所述导电金属层包含铜。
41.根据权利要求33所述的方法,其中,所述种子层在不使用碎屑去除工艺或预处理工艺的情况下被沉积。
42.根据权利要求33所述的方法,其中,所述方法不包括用于处理任何导电金属富余的化学机械平坦化工艺或化学机械平坦化后清洁工艺。
43.一种介电膜,包括:
a)至少一种完全酰亚胺化的聚酰亚胺聚合物;和
b)至少一种交联的含金属的(甲基)丙烯酸酯。
44.根据权利要求43所述的介电膜,其中,所述介电膜是能自己立住的介电膜。
45.一种制备交联的介电膜的方法,包括:
在衬底上涂覆权利要求1-14中任一所述的形成介电膜的组合物以形成介电膜;
在50℃至150℃的温度烘烤所述介电膜;和
将所述介电膜暴露于辐射源或热源以形成所述交联的介电膜。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201762556723P | 2017-09-11 | 2017-09-11 | |
US62/556,723 | 2017-09-11 | ||
US201762581895P | 2017-11-06 | 2017-11-06 | |
US62/581,895 | 2017-11-06 | ||
PCT/US2018/020102 WO2019050565A1 (en) | 2017-09-11 | 2018-02-28 | COMPOSITION FORMING DIELECTRIC FILM |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109790405A CN109790405A (zh) | 2019-05-21 |
CN109790405B true CN109790405B (zh) | 2022-07-15 |
Family
ID=64426854
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880001950.2A Active CN109789644B (zh) | 2017-09-11 | 2018-02-28 | 形成介电膜的组合物 |
CN201880001944.7A Active CN109790405B (zh) | 2017-09-11 | 2018-02-28 | 形成介电膜的组合物 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201880001950.2A Active CN109789644B (zh) | 2017-09-11 | 2018-02-28 | 形成介电膜的组合物 |
Country Status (8)
Country | Link |
---|---|
US (2) | US10563014B2 (zh) |
EP (2) | EP3478482B1 (zh) |
JP (2) | JP7140687B2 (zh) |
KR (2) | KR102456361B1 (zh) |
CN (2) | CN109789644B (zh) |
PH (2) | PH12018550157A1 (zh) |
TW (2) | TWI766959B (zh) |
WO (2) | WO2019050566A1 (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108027563B (zh) * | 2015-04-21 | 2021-12-03 | 富士胶片电子材料美国有限公司 | 光敏性聚酰亚胺组合物 |
WO2019050566A1 (en) * | 2017-09-11 | 2019-03-14 | Fujifilm Electronic Materials U.S.A., Inc. | DIELECTRIC FILMOGENEOUS COMPOSITION |
CN110431484B (zh) * | 2019-01-23 | 2021-11-02 | 律胜科技股份有限公司 | 感光性聚酰亚胺树脂组合物及其聚酰亚胺膜 |
CN110499087A (zh) * | 2019-08-02 | 2019-11-26 | 刘宁 | 一种提高配电柜柜体表面耐腐蚀性能的方法 |
US11721543B2 (en) | 2019-10-04 | 2023-08-08 | Fujifilm Electronic Materials U.S.A., Inc. | Planarizing process and composition |
CN111113754B (zh) * | 2019-11-22 | 2020-12-04 | 桂林电器科学研究院有限公司 | 一种提高聚酰胺酸薄膜边部强度的方法 |
US20210287939A1 (en) * | 2020-03-10 | 2021-09-16 | Fujifilm Electronic Materials U.S.A., Inc. | Metal Deposition Processes |
CN115734982A (zh) * | 2020-07-02 | 2023-03-03 | 富士胶片电子材料美国有限公司 | 介电膜形成组合物 |
KR20230038756A (ko) * | 2020-07-15 | 2023-03-21 | 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. | 유전체 막 형성 조성물 |
EP4232421A4 (en) * | 2020-10-22 | 2024-03-27 | FUJIFILM Electronic Materials U.S.A, Inc. | DIELECTRIC FILM-FORMING COMPOSITION |
TWI753657B (zh) * | 2020-11-17 | 2022-01-21 | 位速科技股份有限公司 | 鈣鈦礦光電元件 |
CN112531118B (zh) * | 2020-11-18 | 2023-11-07 | 位速科技股份有限公司 | 钙钛矿光电元件 |
WO2024024783A1 (ja) * | 2022-07-29 | 2024-02-01 | 富士フイルム株式会社 | 転写フィルム、積層体の製造方法、積層体、半導体パッケージの製造方法 |
US20240248400A1 (en) * | 2023-01-05 | 2024-07-25 | Fujifilm Electronic Materials U.S.A., Inc. | Dielectric film forming composition containing acyl germanium compound |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107108900A (zh) * | 2014-12-22 | 2017-08-29 | 陶氏环球技术有限责任公司 | 衍生化聚酰亚胺及其制备和使用方法 |
Family Cites Families (79)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2731447A (en) | 1954-06-11 | 1956-01-17 | Du Pont | Novel polyimides |
US3435002A (en) | 1967-05-15 | 1969-03-25 | Gen Electric | Polyamide acid resins and polyimides therefrom |
US3856752A (en) | 1973-10-01 | 1974-12-24 | Ciba Geigy Corp | Soluble polyimides derived from phenylindane diamines and dianhydrides |
DE2437348B2 (de) | 1974-08-02 | 1976-10-07 | Ausscheidung in: 24 62 105 | Verfahren zur herstellung von reliefstrukturen |
US3983092A (en) | 1975-01-20 | 1976-09-28 | Ciba-Geigy Corporation | Phenylindane diamine mixture and epoxy resin therewith |
US4026876A (en) | 1975-01-20 | 1977-05-31 | Ciba-Geigy Corporation | Soluble polyamide-imides derived from phenylindane diamines |
US4579809A (en) | 1982-10-22 | 1986-04-01 | Ciba-Geigy Corporation | Positive image formation |
US4629777A (en) | 1983-05-18 | 1986-12-16 | Ciba-Geigy Corporation | Polyimides, a process for their preparation and their use |
US4656116A (en) | 1983-10-12 | 1987-04-07 | Ciba-Geigy Corporation | Radiation-sensitive coating composition |
JPS61226745A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
JPS61226746A (ja) | 1985-03-30 | 1986-10-08 | Japan Synthetic Rubber Co Ltd | 半導体集積回路製造用のスピンコート用レジスト組成物 |
US4608409A (en) | 1985-05-08 | 1986-08-26 | Desoto, Inc. | Polyacrylated oligomers in ultraviolet curable optical fiber coatings |
EP0540508B1 (en) | 1985-07-31 | 1996-03-06 | Sumitomo Chemical Company, Limited | Imide hardeners and their preparation |
JPH0616174B2 (ja) | 1985-08-12 | 1994-03-02 | 三菱化成株式会社 | ナフトキノンジアジド系化合物及び該化合物を含有するポジ型フオトレジスト組成物 |
JPH083630B2 (ja) | 1986-01-23 | 1996-01-17 | 富士写真フイルム株式会社 | 感光性組成物 |
JPS6334540A (ja) | 1986-07-30 | 1988-02-15 | Mitsubishi Chem Ind Ltd | ポジ型フオトレジスト組成物 |
CA1326673C (en) | 1986-12-26 | 1994-02-01 | Yasuhisa Saito | Imide compound and composition containing the same |
US5006611A (en) | 1989-01-20 | 1991-04-09 | Ciba-Geigy Corporation | Curable epoxy resin compositions of matter containing a thermoplastic which has phenolic end groups |
US5122436A (en) | 1990-04-26 | 1992-06-16 | Eastman Kodak Company | Curable composition |
EP0584410A1 (en) * | 1991-07-05 | 1994-03-02 | Conductus, Inc. | Superconducting electronic structures and methods of preparing same |
US5397863A (en) * | 1991-09-13 | 1995-03-14 | International Business Machines Corporation | Fluorinated carbon polymer composites |
US5252534A (en) | 1992-05-29 | 1993-10-12 | Eastman Kodak Company | Slipping layer of polyimide-siloxane for dye-donor element used in thermal dye transfer |
US5302547A (en) * | 1993-02-08 | 1994-04-12 | General Electric Company | Systems for patterning dielectrics by laser ablation |
US5412065A (en) | 1993-04-09 | 1995-05-02 | Ciba-Geigy Corporation | Polyimide oligomers |
JP3112229B2 (ja) | 1993-06-30 | 2000-11-27 | 東京応化工業株式会社 | ポジ型ホトレジスト組成物 |
US5578697A (en) * | 1994-03-29 | 1996-11-26 | Kabushiki Kaisha Toshiba | Polyimide precursor, bismaleimide-based cured resin precursor and electronic parts having insulating members made from these precursors |
JPH0862834A (ja) | 1994-08-22 | 1996-03-08 | Mitsubishi Chem Corp | フォトレジスト組成物 |
JP3257325B2 (ja) | 1995-01-31 | 2002-02-18 | ジェイエスアール株式会社 | ポリイミド系共重合体の製造方法、薄膜形成剤、並びに液晶配向膜の製造方法 |
JPH095988A (ja) | 1995-06-21 | 1997-01-10 | Mitsubishi Chem Corp | 感放射線性塗布組成物 |
JP3562599B2 (ja) | 1995-08-18 | 2004-09-08 | 大日本インキ化学工業株式会社 | フォトレジスト組成物 |
TW369554B (en) * | 1995-10-19 | 1999-09-11 | Three Bond Co Ltd | Photocurable composition |
US5783656A (en) | 1996-02-06 | 1998-07-21 | Japan Synthetic Rubber Co., Ltd. | Polyamic acid, polyimide and liquid crystal aligning agent |
US5969055A (en) | 1996-05-16 | 1999-10-19 | Jsr Corporation | Liquid crystal alignment agent |
US5874770A (en) * | 1996-10-10 | 1999-02-23 | General Electric Company | Flexible interconnect film including resistor and capacitor layers |
WO1998018838A1 (fr) * | 1996-10-29 | 1998-05-07 | Nippon Zeon Co., Ltd. | Polymere norbornene thermoplastique modifie et procede de production |
EP0902048B1 (en) * | 1997-09-11 | 2005-11-23 | E.I. Du Pont De Nemours And Company | High dielectric constant flexible polyimide film and process of preparation |
US6114240A (en) | 1997-12-18 | 2000-09-05 | Micron Technology, Inc. | Method for fabricating semiconductor components using focused laser beam |
US6036809A (en) | 1999-02-16 | 2000-03-14 | International Business Machines Corporation | Process for releasing a thin-film structure from a substrate |
JP2000294922A (ja) | 1999-04-01 | 2000-10-20 | Victor Co Of Japan Ltd | 多層プリント配線板用の絶縁樹脂組成物 |
JP3736607B2 (ja) | 2000-01-21 | 2006-01-18 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
JP4717268B2 (ja) | 2001-01-12 | 2011-07-06 | 富士通株式会社 | 絶縁樹脂組成物及びそれから形成した絶縁層を含む多層回路基板 |
AU2002303382A1 (en) * | 2001-04-19 | 2002-11-05 | General Electric Company | Spin coating process |
US20040235992A1 (en) | 2001-05-30 | 2004-11-25 | Koji Okada | Photosensitive resin composition and photosensitive dry film resist and photosensitive coverlay film produced therefrom |
WO2003038526A1 (fr) | 2001-10-30 | 2003-05-08 | Kaneka Corporation | Composition de resine photosensible et films et stratifies photosensibles ainsi obtenus |
US20030217462A1 (en) * | 2001-12-13 | 2003-11-27 | Fei Wang | Method for improving electromigration performance of metallization features through multiple depositions of binary alloys |
US7153754B2 (en) * | 2002-08-29 | 2006-12-26 | Micron Technology, Inc. | Methods for forming porous insulators from “void” creating materials and structures and semiconductor devices including same |
GB0221893D0 (en) * | 2002-09-20 | 2002-10-30 | Avecia Ltd | Process |
US6844950B2 (en) | 2003-01-07 | 2005-01-18 | General Electric Company | Microstructure-bearing articles of high refractive index |
EP1633823B1 (en) * | 2003-05-30 | 2008-10-29 | FUJIFILM Imaging Colorants Limited | Process for etching a metal or alloy surface |
US7012017B2 (en) * | 2004-01-29 | 2006-03-14 | 3M Innovative Properties Company | Partially etched dielectric film with conductive features |
US7598167B2 (en) | 2004-08-24 | 2009-10-06 | Micron Technology, Inc. | Method of forming vias in semiconductor substrates without damaging active regions thereof and resulting structures |
US7335608B2 (en) * | 2004-09-22 | 2008-02-26 | Intel Corporation | Materials, structures and methods for microelectronic packaging |
US7442325B2 (en) * | 2004-09-29 | 2008-10-28 | Cytec Technology Corp. | Stabilized crosslinking composition |
WO2006065660A2 (en) * | 2004-12-13 | 2006-06-22 | Hybrid Plastics, Inc. | Metal-containing compositions |
US8709705B2 (en) * | 2004-12-13 | 2014-04-29 | Pryog, Llc | Metal-containing compositions and method of making same |
US7410631B2 (en) * | 2005-03-02 | 2008-08-12 | Aps Laboratory | Metal phosphate sols, metal nanoparticles, metal-chalcogenide nanoparticles, and nanocomposites made therefrom |
GB0511132D0 (en) | 2005-06-01 | 2005-07-06 | Plastic Logic Ltd | Layer-selective laser ablation patterning |
US7745516B2 (en) | 2005-10-12 | 2010-06-29 | E. I. Du Pont De Nemours And Company | Composition of polyimide and sterically-hindered hydrophobic epoxy |
US7629424B2 (en) * | 2005-12-09 | 2009-12-08 | Pryog, Llc | Metal-containing compositions and method of making same |
US7682972B2 (en) * | 2006-06-01 | 2010-03-23 | Amitec-Advanced Multilayer Interconnect Technoloiges Ltd. | Advanced multilayer coreless support structures and method for their fabrication |
US8287686B2 (en) | 2006-07-24 | 2012-10-16 | Designer Molecules, Inc. | Derivatives of poly(styrene-co-allyl alcohol) and methods for use thereof |
US7685687B2 (en) * | 2007-01-22 | 2010-03-30 | E. I. Du Pont De Nemours And Company | Methods of making high capacitance density ceramic capacitors |
US8147639B2 (en) | 2008-05-22 | 2012-04-03 | Tripartisan Technologies, Llc | Process for manufacturing free standing thermoplastic polymeric films |
JP6004649B2 (ja) | 2008-08-07 | 2016-10-12 | プライオグ リミテッド ライアビリティ カンパニーPryog,Llc | 金属組成物及びその製法 |
US20110287243A1 (en) * | 2009-03-06 | 2011-11-24 | E.I. Du Pont De Nemours And Company | Multilayer film for electronic circuitry applications and methods relating thereto |
WO2011017039A2 (en) | 2009-08-03 | 2011-02-10 | 3M Innovative Properties Company | Antireflective transparent emi shielding optical filter |
US8710682B2 (en) * | 2009-09-03 | 2014-04-29 | Designer Molecules Inc, Inc. | Materials and methods for stress reduction in semiconductor wafer passivation layers |
TW201114602A (en) * | 2009-10-20 | 2011-05-01 | Toyo Boseki | Transparent electrically conductive laminated film |
US8816021B2 (en) * | 2010-09-10 | 2014-08-26 | Designer Molecules, Inc. | Curable composition with rubber-like properties |
US9136123B2 (en) * | 2013-01-19 | 2015-09-15 | Rohm And Haas Electronic Materials Llc | Hardmask surface treatment |
US20140274470A1 (en) * | 2013-03-14 | 2014-09-18 | Taylor Made Golf Company, Inc. | Golf ball compositions |
US9725621B2 (en) * | 2013-05-03 | 2017-08-08 | Cabot Corporation | Chemical mechanical planarization slurry composition comprising composite particles, process for removing material using said composition, CMP polishing pad and process for preparing said composition |
US9695284B2 (en) | 2013-05-17 | 2017-07-04 | Fujifilm Electronic Materials U.S.A., Inc. | Polymer and thermosetting composition containing same |
CN106471077B (zh) * | 2014-08-29 | 2020-02-28 | 古河电气工业株式会社 | 粘接膜和使用了粘接膜的半导体封装体 |
KR101961996B1 (ko) * | 2014-08-29 | 2019-03-25 | 후루카와 덴키 고교 가부시키가이샤 | 접착 필름 |
CN108027563B (zh) * | 2015-04-21 | 2021-12-03 | 富士胶片电子材料美国有限公司 | 光敏性聚酰亚胺组合物 |
CN108602844A (zh) | 2015-09-29 | 2018-09-28 | 普拉奥有限责任公司 | 金属组合物及其制备方法 |
CN106832280A (zh) * | 2017-02-27 | 2017-06-13 | 华烁科技股份有限公司 | 一种热塑性导热液晶聚酰亚胺薄膜及其制备方法 |
WO2019050566A1 (en) | 2017-09-11 | 2019-03-14 | Fujifilm Electronic Materials U.S.A., Inc. | DIELECTRIC FILMOGENEOUS COMPOSITION |
-
2018
- 2018-02-28 WO PCT/US2018/020118 patent/WO2019050566A1/en unknown
- 2018-02-28 US US15/907,332 patent/US10563014B2/en active Active
- 2018-02-28 CN CN201880001950.2A patent/CN109789644B/zh active Active
- 2018-02-28 WO PCT/US2018/020102 patent/WO2019050565A1/en active Application Filing
- 2018-02-28 KR KR1020187028209A patent/KR102456361B1/ko active IP Right Grant
- 2018-02-28 KR KR1020187027425A patent/KR102494132B1/ko active IP Right Grant
- 2018-02-28 JP JP2018560516A patent/JP7140687B2/ja active Active
- 2018-02-28 JP JP2018559767A patent/JP7140686B2/ja active Active
- 2018-02-28 EP EP18773067.6A patent/EP3478482B1/en active Active
- 2018-02-28 EP EP18773066.8A patent/EP3478777B1/en active Active
- 2018-02-28 US US15/907,323 patent/US10875965B2/en active Active
- 2018-02-28 CN CN201880001944.7A patent/CN109790405B/zh active Active
- 2018-03-07 TW TW107107683A patent/TWI766959B/zh active
- 2018-03-07 TW TW107107682A patent/TWI776863B/zh active
- 2018-09-18 PH PH12018550157A patent/PH12018550157A1/en unknown
- 2018-09-19 PH PH12018550158A patent/PH12018550158A1/en unknown
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107108900A (zh) * | 2014-12-22 | 2017-08-29 | 陶氏环球技术有限责任公司 | 衍生化聚酰亚胺及其制备和使用方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3478777A4 (en) | 2019-05-08 |
WO2019050566A1 (en) | 2019-03-14 |
KR102456361B1 (ko) | 2022-10-19 |
US20190081001A1 (en) | 2019-03-14 |
JP2020533418A (ja) | 2020-11-19 |
CN109789644A (zh) | 2019-05-21 |
CN109790405A (zh) | 2019-05-21 |
US10875965B2 (en) | 2020-12-29 |
JP7140686B2 (ja) | 2022-09-21 |
PH12018550157A1 (en) | 2019-09-09 |
TWI766959B (zh) | 2022-06-11 |
EP3478482B1 (en) | 2020-12-16 |
EP3478482A1 (en) | 2019-05-08 |
KR20200053388A (ko) | 2020-05-18 |
JP7140687B2 (ja) | 2022-09-21 |
US10563014B2 (en) | 2020-02-18 |
TWI776863B (zh) | 2022-09-11 |
TW201912677A (zh) | 2019-04-01 |
WO2019050565A1 (en) | 2019-03-14 |
KR20200053389A (ko) | 2020-05-18 |
PH12018550158A1 (en) | 2019-09-09 |
EP3478777A1 (en) | 2019-05-08 |
CN109789644B (zh) | 2023-01-31 |
KR102494132B1 (ko) | 2023-01-31 |
EP3478482A4 (en) | 2019-07-17 |
EP3478777B1 (en) | 2020-11-18 |
JP2020533419A (ja) | 2020-11-19 |
US20190077913A1 (en) | 2019-03-14 |
TW201912717A (zh) | 2019-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN109790405B (zh) | 形成介电膜的组合物 | |
JP6845156B2 (ja) | 感光性ポリイミド組成物 | |
JP6898031B2 (ja) | 感光性積層構造体 | |
KR20230152112A (ko) | 수지 조성물, 경화물, 적층체, 경화물의 제조 방법, 및, 반도체 디바이스, 및, 폴리이미드 전구체 및 그 제조 방법 | |
TW202210557A (zh) | 硬化物的製造方法、積層體的製造方法及電子元件的製造方法 | |
US11721543B2 (en) | Planarizing process and composition | |
US20220017673A1 (en) | Dielectric Film Forming Compositions | |
JP2023511118A (ja) | ドライフィルム | |
WO2024147917A1 (en) | Dielectric film forming composition containing acyl germanium compound |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |