201114602 六、發明說明： 【發明所屬之技術領域】 本發明係關於在透明塑膠薄膜所構成的基材上，將高 折射率層、低折射率層及透明導電性薄膜層依此順序積層 而成之透明導電性薄膜之發明。特別是關於作爲靜電電容 式觸控面板等經圖案化之電極薄膜來使用時，由於有透明 導電性薄膜層的部分和被除去的部分之光學特性差異小， 因此可提高目視辨認性之透明導電性薄膜。 【先前技術】 在透明塑膠薄膜所構成的基材上，積層有透明且電阻 小的薄膜而成之透明導電性薄膜，係廣泛地被使用在利用 其導電性之用途，例如液晶顯示器或電激發光（有時略記 EL)顯示器等平面顯示器、或電阻膜式觸控面板之透明電極 等，電氣、電子領域之用途。 近年來，靜電電容式觸控面板被搭載於攜帶型電話、 攜帶型音樂終端等行動機器的案例逐漸增加。這種靜電電 容式觸控面板，具有在經圖案化之導體上積層介電質層之 構成，並且藉由以手指等觸碰的方式，經由人體的靜電電 容而被接地。此時，圖形電極和接地點之間的電阻値產生 變化，辨識位置輸入。但是使用以往的透明導電性薄膜時’ 有透明導電性薄膜層的部分和被除去的部分之光學特性差 異大，因此圖形顯著，當配置在液晶顯示器等顯示體的前 積 出 提 而 周 色 或 率 。 過 題透 問的 的膜 低薄 降性 性電 認導 辨明 視透 巨升 有提 會 7 ’ 爲 時 面 201114602 層反射防止加工等中所使用的折射率相異之層，利用光的 干涉之方法。亦即，提出在透明導電性薄膜層和基材薄膜 之間，設置折射率相異之層，利用光學干涉的方法（專利文 獻1〜3)。 〔專利文獻1〕日本特開平11-286066號公報 〔專利文獻2〕日本特許第3626624號公報 〔專利文獻3〕日本特開2006-346878號公報 但是，該等專利文獻1〜3記載的透明導電性薄膜，係可 改善作爲透明導電性薄膜之目視辨認性，但未經考慮在將 透明導電性薄膜層圖案化時，減少有透明導電性薄膜的部 分和沒有的部分之光學特性差異的問題，因此經圖案化的 部位顯著。 【發明內容】 〔發明所欲解決之課題〕 亦即，本發明之目的爲鑑於上述以往的問題點，而提 供透明導電性積層薄膜，其係藉由使有透明導電性薄膜層 的部分和被除去的部分之光學特性差異變小的方式，於使 用在液晶顯示器等時，目視辨認性良好，並且圖形不顯著》 〔解決課題之手段〕 本發明係鑑於如上述之狀況而硏發者，能解決上述課 題之透明導電性積層，係由以下之構成所形成。 1. 一種透明導電性積層薄膜，其特徵爲在由透明塑膠薄膜 所構成之基材上，具有將高折射率層、低折射率層及透 明導電性薄膜層依此順序積層而成之構造；高折射率層 201114602 之折射率爲1.70〜2.50，膜厚在4〜2〇nm之範圍；低折射 率層之折射率爲1_30~1·60’膜厚在20〜50nm之範圍。 2 .如1記載之透明導電性積層薄膜，其中根據透明導電性 積層薄膜之JISK7105(1999年版）所規定之使用0.125 mm 之光學梳時的透過法之圖像鮮明度’和使用2.0mm之光學 梳時的透過法之圖像鮮明度之比’係滿足下述（1)式’ 0.125 mm寬度梳之値/ 2 mm寬度梳之値20.7 (1) 3 .如1或2記載之透明導電性積層薄膜’其中透明導電性 薄膜層係由非晶質金屬氧化物薄膜所構成。 4.如3記載之透明導電性積層薄膜，其中透明導電性薄膜 層係氧化錫之含有率爲1 〇〜60質量％之非晶質銦-錫複合 氧化物。 5 —種透明導電性積層薄膜，其特徵爲圖案化如1~4中任 —項記載之透明導電性積層薄膜的透明導電性薄膜層而 成之透明導電性積層薄膜的透明導電性薄膜層側’積層 有折射率1.40〜1.70的介電質層。 6·—種透明導電性積層薄膜，其特徵爲具有如5記載之透 明導電性積層薄膜之圖案化所形成之透明導電性薄膜層 的部分和沒有的部分之光學特性差異，係滿足下述（2)式 及（3)式， 0 S | Tl - T0 | 盔 1 .0 (2) 0 S | b1 - b0 | $ 1 .0 (3) (T1:有透明導電性薄膜層的部分之薄膜的全部光線透 201114602 bl:有透明導電性薄膜層的部分之薄膜的色彩b値， T0:沒有透明導電性薄膜層‘的部分之薄膜的全部光 線透過率' bO:沒有透明導電性薄膜層的部分之薄膜的色彩b 値） 〔發明之功效〕 本發明之透明導電性薄膜係於透明塑膠薄膜所構成的 基材上，具有以高折射率層、低折射率層及透明導電性薄 膜層之順序積層而成的構成，並且在將透明導電性薄膜層 圖案化時，有透明導電性薄膜層的部分和沒有的部分之光 學特性差異小，因此即使配置在液晶顯示器等顯示體的前 面，透明導電性薄膜層的圖形亦不顯著，所以可抑制目視 辨認性之降低。 【實施方式】 本發明之透明導電性薄膜係於透明塑膠薄膜所構成的 基材上，具有將高折射率層、低折射率層及透明導電性薄 膜層依此順序積層而成之構成。 進一步，透明導電性積層薄膜特徵爲，在將上述透明 導電性積層薄膜的透明導電性薄膜層，在經圖案化後之透 明導電性積層薄膜的透明導電性薄膜層側，積層有介電質 層。 以下，依各層別詳細地說明。 (透明塑膠薄膜所構成之基材） 本發明中使用的透明塑膠薄膜所構成的基材，係將有 201114602 機高分子以薄膜狀溶融壓出或溶液壓出，成形爲薄膜狀， 因應必要朝長度方向及/或寬方向施行延伸、熱固定、熱鬆 弛處理之薄膜。作爲有機高分子，可舉出聚乙烯、聚丙烯、 聚對苯二甲酸乙二酯、聚-2,6-萘二甲酸乙二酯、聚對苯二 甲酸一丙醋、耐給6、耐输4、耐輪66、耐输12'聚酿亞 胺、聚醯胺醯亞胺、聚醚硫、聚醚醚酮、聚碳酸酯、聚芳 酯、丙酸纖維素、聚氯乙烯、聚偏二氯乙烯、聚乙烯醇、 聚醚醯亞胺、聚苯硫醚、聚苯醚、聚苯乙烯、間規聚苯乙 烯、降冰片烯系聚合物等。 該等有機高分子之中，聚對苯二甲酸乙二酯、聚對苯 二甲酸二丙酯、聚-2,6-萘二甲酸乙二酯、間規聚苯乙烯、 降冰片烯系聚合物、聚碳酸酯、聚芳酯等較適合。且，該 等有機高分子可以和其他有機聚合物的單體少量共聚合， 混合其他有機高分子亦可。 本發明中使用的透明塑膠薄膜所構成的基材之厚度， 爲10~3 00μηι較佳，更佳爲70~260μπι。塑膠薄膜之厚度未 達ΙΟμϊη時，機械強度不足，且在透明導電性薄膜的圖案 形成步驟中操作困難，因而不佳。另一方面，若厚度超過 3 0 Ομπι，則觸控面板之厚度變成過厚，因而不適用於行動 機器等。 本發明中使用的透明塑膠薄膜所構成的基材只要在無 損於.本發明之目的之範圍內，對前述薄膜施行電暈放電處 理、輝光放電處理、火燄處理、紫外線照射處理、電子束 照射處理、臭氧處理等表面活性化處理亦可。· 201114602 又，在本發明使用的透明塑膠薄膜所構成之基材，以 提高與高折射率層之密合性、賦予耐藥品性、防止寡聚物 等低分子量物之析出爲目的，亦可設置以硬化型樹脂爲主 要構成成分之硬化物層》 前述硬化型樹脂只要是藉由加熱、紫外線照射、電子 束照射等能量施加而硬化之樹脂，則無特別限定，可舉出 聚矽氧樹脂、丙烯酸樹脂、甲基丙烯酸酯樹脂、環氧樹脂、 三聚氰胺樹脂、聚酯樹脂、胺基甲酸酯樹脂等。從生產性 之觀點而言，以紫外線硬化型樹脂爲主成分之硬化型樹脂 爲佳。 作爲這種紫外線硬化型樹脂，例如可舉出如多元醇之 丙烯酸或甲基丙烯酸酯之多官能性丙烯酸酯樹脂、二異氰 酸酯、多元醇及丙烯酸或甲基丙烯酸之羥基烷基酯等所合 成之多官能性胺基甲酸酯丙烯酸酯樹脂等。因應必要，可 在該等多官能性樹脂加入單官能性單體，例如乙烯吡咯啶 酮、甲基丙烯酸甲酯、苯乙烯等使其共聚合。 又爲了提高高折射率層和硬化物層的附著力，爲了 提高透明導電性薄膜和硬化物層之附著力，進一步將硬化 物層予以表面處理爲有效。作爲具體方法，可舉出利用照 射輝光放電或電暈放電之放電處理法、增加羰基、羧基、 經基之方法、利用酸或鹼處理之化學藥品處理法、增加胺 基、羥基、羰基等極性基之方法等。 紫外線硬化型樹脂通常被添加光聚合引發劑而使用。 作爲光聚合引發劑，可以不特別限定使用吸收紫外線產生 201114602 自由基之眾所週知之化合物，作爲這種光聚合引發劑，例 如可舉出各種本偶姻類、苯酮類、二苯甲酮類等。光聚合 引發劑之添加量相對於紫外線硬化型樹脂1〇〇質量份而 言，以1~5質量份爲佳。 塗布液中之樹脂成分濃度可以考慮配合塗布法之黏度 等而適當地選擇。例如’塗布液中紫外線硬化型樹脂、光 聚合引發劑之合計量所佔的比例通常爲20〜80質量％。 且，在該塗布液中’亦可配合必要添加其他眾所週知之添 加劑’例如聚矽氧系界面活性劑、氟系界面活性劑等調平 劑等。 本發明中，經調製之塗布液被塗布於透明塑膠薄膜所 構成之基材上。對於塗布法並無特別限定，可使用硬塗法、 凹版印刷塗布法、逆向輥塗法等習知之方法。 且，硬化物層之厚度爲0.1~15pm之範圍爲佳。更佳爲 0.5〜ΙΟμιη，特佳爲1〜8μιη。硬化物層的厚度未達Ο.ίμιη時， 由於無法充分地形成經交聯之構造，因此耐藥品性容易降 低，也容易引起寡聚物等的低分子量造成之密合性降低。 另一方面，硬化物層之厚度爲超過15μιη時，有生產性降 低之傾向。 又，爲了提高設有硬化物層的薄膜或導電性積層薄膜 之滑動性，使硬化物層含有粒子亦較佳。於該情形下，使 硬化物層中含有粒子，以滿足下述條件爲佳。 亦即，根據JISK7105(1999年版）所規定之使用0.125 mm之光學梳時的透過法之圖像鮮明度，和使用2.0 mm之光 -10 - 201114602 學梳時的透過法之圖像鮮明度之比，係設計在〇 ·12 5 mm寬 度梳之値/2隱寬度梳之値20.7之範圍爲佳。更佳爲〇·8以 上。未達0.7時，當設置在高精細之液晶顯示器等顯示體 的前面時，由於產生閃爍的現象而降低目視辨認性。 作爲含於硬化物層之粒子，並無特別限定，可例示無 機粒子（例如二氧化矽、碳酸鈣等）、耐熱性有機粒子（例如 聚矽氧粒子、PTFE粒子、聚醯亞胺粒子等）、交聯高分子 粒子（交聯PS粒子、交聯丙烯酸系粒子等）。該等粒子的平 均粒徑（根據電子顯微鏡法）爲〇·〇5~5μιη爲佳，0·1~2μιη更 佳。平均粒徑爲未達〇.〇5μιη時，難以使粒子分散，凝聚粒 子後的粗大粒子變多而不佳。平均粒徑爲超過5μπι時，設 置在高精細之液晶顯示器等顯示體的前面時，有時會因爲 產生閃爍現象而降低目視辨認性。 (高折射率層） 本發明可使用的高折射率層之折射率在1.70〜2.50之 範圍，較佳爲1.90〜2.30，更佳爲1.90〜2.10。若未達1_70, 則與低折射率層之折射率差異過小，因此將透明導電性薄 膜層圖案化時，難以使有透明導電性薄膜層的部分和沒有 的部分之光學特性接近。另一方面，折射率爲超過2.50時， 難以使傾斜方向之圖形不顯著，且適合工業方面的材料也 不存在。作爲高折射率層的具體素材，可舉出Ti〇2、Nb2 05、 Zr〇2、Ta2〇5、ZnO、In2〇3、Sn〇2等及該等之複合氧化物 及硫化鋅ZnS。該等之中，從生產性的關點而言，ZnO、 I n2 〇3' Sn02及該等之複合氧化物爲佳。又，爲了對該等氧 -11- 201114602 化物或硫化物調整折射率，亦可添加任意的氧化物、硫化 物。 高折射率層之膜厚爲4〜2〇nm，較佳爲7~15nm，更佳 爲8〜13 nm。若膜厚爲未達4 nm，則成爲不連續之膜，膜的 安定性降低。另一方面，若膜厚爲超過2 Onm，則光反射變 強，因此將透明導電性薄膜層圖案化時，難以使有透明導 電性薄膜層的部分和沒有的部分之光學特性接近，配置在 液晶顯示器等顯示體的前面時，透明導電性薄膜層的圖形 顯著，目視辨認性降低。但是，與其任意地改變高折射率 層的折射率和膜厚，不如將光學膜厚（折射率X膜厚）控制成 一定爲佳。 作爲本發明中的高折射率層之成膜方法，已知有真空 蒸鍍法、濺鍍法、CVD法、離子電鍍法、噴霧法等，可配 合需要之膜厚適當地使用前述方法，但是從降低膜厚不均 的觀點而言，以濺鍍法爲佳。 濺鏟法中，一般有從金屬標靶導入反應性氣體製作金 屬氧化物之反應性濺鍍法、和從氧化物標靶製作金屬氧化 物之方法。反應性濺鍍法中，存在有成膜速度根據反應性 氣體的流量而急遽地變化之遷移區域。因此爲了抑制膜厚 之不均，使用氧化物標靶爲佳。 (低折射率層 本發明所使用的低折射率層之折射率爲1.30〜1.60,較 佳爲1.4〜1.1.55,更佳爲1·43~1.50。若折射率爲未達1.30, 則成爲多孔之膜，因此會使形成在其上方的透明導電性薄 -12- 201114602 層之電特性降低。另一方面，若折射率爲超過1.60 ’則與 透明導電性薄膜層之光的干涉變成太弱，因此將透明導電 性薄膜層圖案化時，難以使有透明導電性薄膜層的部分和 沒有的部分之光學特性接近，配置在液晶顯示器等顯示體 的前面時，透明導電性薄膜層的圖形顯著，目視辨認性降 低。可見目視辨認性降低。 作爲低折射率層之具體素材，可舉出Si〇2、Al2〇3等 透明金屬氧化物及Si02-Al203等複合金屬氧化物、CuF2、 CeF2、MnF2、MgF2等金屬氟化物及該等之複合氟化物。又， 爲了對該等氧化物或氟化物調整折射率，亦可添加任意的 氧化物、硫化物。 低折射率層之膜厚爲20〜50nm，較佳爲25〜45nm，更 佳爲30〜4 0nm。若超過50nm，則因爲與透明導電性薄膜層 之光的干涉，波長依存性變成太強，因此將透明導電性薄 膜層圖案化時，難以使有透明導電性薄膜層的部分和沒有 的部分之光學特性接近。另一方面，未達2 0 nm時，難以引 起與透明導電性薄膜層之光的干涉，而無法提高透過率， 因此將透明導電性薄膜層圖案化時，難以使有透明導電性 薄膜層的部分和沒有的部分之光學特性接近，配置在液晶 顯示器等顯示體的前面時，透明導電性薄膜層的圖形顯 著’目視辨認性降低。但是，與其任意地改變低折射率層 的折射率和膜厚，不如將光學膜厚（折射率x膜厚）控制成 一定爲佳。 作爲本發明中的低折射率層之成膜方法，已知有真空 -13- 201114602 蒸鍍法、濺鍍法、CVD法、離子電鍍法、噴霧法 合需要之膜厚適當地使用前述方法，從減少膜厚 點而言，以濺鍍法爲佳。一般以濺鍍形成時係使 DC或AC濺鍍法。爲了提高成膜速度，使用控制 體流量之電阻控制以使DC或AC電源的電壓値 定，或使用控制反應性氣體流量之電漿放射法以 素之電漿中的發光強度保持爲一定。 (透明導電性薄膜層） 作爲本發明中的透明導電性薄膜，可舉出氧 化錫、氧化鋅、銦·錫複合氧化物、錫-銻複合氧ί 鋁複合氧化物、銦-鋅複合氧化物等。該等之中， 定性和電路加工性之觀點而言，以銦-錫複合氧 合。 本發明中，積層透明導電性薄膜層，藉由將 性積層薄膜的表面電阻値較佳設爲50〜200 ΟΩ/口 爲1 00- 1 5 00Ω/□的方式，可將透明導電性積層薄 觸控面板等。表面電阻値爲未達50Ω/匚I，或超過 時，觸控面板的位置辨識精確度變差，因而不佳 透明導電性薄膜的膜厚在4~30nm之範圍爲 爲10〜2 5 nm。透明導電性薄膜的膜厚爲未達4 nm 形成連續的薄膜，而難以獲得良好的導電性。另 透明導電性薄膜的膜厚爲比3 Onm更厚時，將透明 膜層圖案化時，難以使有透明導電性薄膜層的部 的部分之光學特性接近。 透明導電性薄膜可以是結晶質或非晶質。若 等，可配 不均的觀 用反應性 反應性氣 保持爲一 使特定元 化銦、氧 匕物、鋅_ 從環境穩 化物較適 透明導電 ，更佳設 膜使用在 2000Ω/口 〇 佳，更佳 時，難以 —方面， 導電性薄 分和沒有 要透明導 -14 - 201114602 電膜的機械強度高者，則結晶質較佳。 若要透明導電性薄膜有柔軟性、或微細的圖形加工等 良好的蝕刻，則透明導電性薄膜層爲非晶質較佳。使用結 晶質之透明導電性薄膜層時，在以鹽酸等將透明導電性薄 膜圖案化時，不易溶解’因此加工費時而產生無法精確地 達成微細的圖形等問題。 爲了獲得非晶質之透明導電性薄膜層，調整摻雜量爲 佳。例如’作爲透明導電性薄膜層，係使用銦-錫複合氧化 物時，氧化錫之含有率爲10〜60質量％爲佳，更佳爲20~50 質量％。氧化錫含有率爲未達10質量％時，成膜中難以抑 制結晶化。另一方面，氧化錫之含有率爲超過60質量％時， 難以提高標靶的密度，生產中容易發生放電異常，從生產 性的觀點而言爲不佳。 又，從生產性的觀點而言，透明導電性薄膜和高折射 率層爲相同的組成較佳。組成爲相異時，必需有高折射率 用、透明導電性薄膜用之各個標靶及陰極，設備方面變成 龐大的裝置。 透明導電性薄膜的層構造可以是單層構造，也可以是2 層以上的積層構造。具有2層以上的積層構造之透明導電性 薄膜的情形，構成各層的前述金屬氧化物可以相同，也可 以相異。 作爲本發明中的透明導電性薄膜之成膜方法，已知有 真空蒸鏟法、濺鍍法、CVD法、離子電鍍法、噴塗法等， 配合需要之膜厚可適當地使用前述方法。 -15- 201114602 例如濺鍍法的情形，係利用使用氧化物標靶之通常的 濺鍍法、或使用金屬標靶之反應性濺鍍法等。此時’作爲 反應性氣體，可導入氧、氮等、或倂用臭氧添加、電漿照 射、離子輔助等手段。且，在無損本發明之目的的範圍， 亦可於基板施加直流、交流、高頻等偏壓。 (折射率爲1.40〜1.70之介電質層（保護層）） 本發明中，折射率爲1 .40〜1 .70之介電質層係合倂以下 目的而具有之層，其係在使用透明導電性積層薄膜作爲顯 示體的構件時，作爲爲了保護透明導電性薄膜而積層之保 護層之目的，和將以手指等觸壓時的靜電電容變化變大， 提高位置輸入精確度之目的》 作爲折射率爲1.40~1.70之介電質層，例如使用Si02、 Al2〇3等透明金屬氧化物及Si02-Al203等複合金屬氧化物、 丙烯酸、聚矽氧、聚酯系樹脂所構成之有機物等。本發明 之導電性積層薄膜即使在設置有這種介電質層的狀態下， 圖形仍不易顯著，目視辨認性優異。 (透明導電性積層薄膜之光學特性） 本案之發明中，在將透明導電性積層薄膜的透明導電 性薄膜層圖案化後，於將折射率爲1 . 4 0〜1 . 7 0的介電質層積 層在透明導電性薄膜層側之狀態下，有透明導電性薄膜層 的部分和沒有的部分之光學特性差異少係屬重要，滿足下 述（2)及（3)式爲佳。 0 ^ | T 1 - TO 1 ^1.0 (2) 0 ^ 丨bl - b0 1 ^1.0 (3) -16- 201114602 (τι:有透明導電性薄膜層的部分之薄膜的全部光線透過 率， bl :有透明導電性薄膜層的部分之薄膜的色彩b値， T0:沒有透明導電性薄膜層的部分之薄膜的全部光線 透過率， bO:沒有透明導電性薄膜層的部分之薄膜的色彩b値） 丁1爲9〇%以上較佳，更佳爲90.5%以上，1)1爲-2~2 較佳，更佳爲-1.0〜1.5，再更佳爲〇~1.5。 T 1、b0、T0、b0係於考慮到各層間的反射光的干涉之 下，藉由將各層的光學厚度在高折射率層的折射率爲 1.70~2.50、高折射率層的膜厚爲4〜20nm、低折射率層的折 射率爲1.30〜1.60、低折射率層的膜厚爲20〜50nm之範圍内 進行調整，即可達成。 又，b値係於上述調整之中，將分光透過率的峰値設 定在45 0〜5 3 Onm之範圍，即可進行調整。更佳的分光透過 率之峰値爲470~510nm。 又，根據透明導電性積層薄膜之JISK7105(1999年版） 所規定之使用 0.125 nun之光學梳時的透過法之圖像鮮明 度，和使用2.0画之光學梳時的透過法之·圖像鮮明度之比 爲 0.7以上較佳。未達〇.7時’設置在髙精細之液晶顯示 器等顯示體的前面時’由於產生閃爍現象而使目視辨認性 降低。 [實施例] 以下根據實施例進一步詳細地說明本發明’但本發明 -17- 201114602 並非受該等實施例限定者。此外，透明導電性積層薄膜之 性能係藉由下述方法測量。 (1) 全部光線透過率 根據 JIS-K7136，利用日本電色工業（股）製 NDH-1001DP測量全部光線透過率。 此外，（2)式及（3)式中的ΤΙ、T0，係於經圖案化後的 透明導電性積層薄膜，將折射率爲1.40~1.70之介電質層， 積層於透明導電性薄膜層側之狀態下，經測量之有透明導 電性薄膜層的部分及沒有透明導電性薄膜層的部分之値。 (2) 表面電阻値 根據JIS-K7194，以4端子法測量表面電阻値。測量 器係使用三菱油化（股）製LotestAMCP-T400。 (3) 色彩b値 根據 JIS-K7105，利用色差計（日本電色工業製、 ZE-2 00 0)，以標準光C/2測量色彩b値。 此外，（2)式及（3)式中的b 1、b 0，係於經圖案化後的 透明導電性積層薄膜，將折射率爲1.40~ 1.70之介電質層， 積層於透明導電性薄膜層側之狀態下，經測量之有透明導 電性薄膜層的部分及沒有透明導電性薄膜層的部分之値。 (4) 目視辨認性評價 將抗蝕劑印刷在透明導電性積層薄膜後，浸漬在1 N 鹽酸中’藉由鹼浸漬，形成1 X 3 cm的圖案。將具有折射率 1.52之丙烯酸系黏合層之二軸配向聚對苯二甲酸乙二酯 (以下略記PET)薄膜，貼合在透明導電性薄膜側作爲保護 -18- 201114602 薄膜。使用富士通公司製FMV-BIBLOLOOXT70M/T，將畫 面設定成白色顯示，再將貼合有保護薄膜的薄膜放置在其 前面，從各種角度評價圖形的觀感》 〇 ·· 大致看不到圖形。 △: 圖形少。 X '· 看見圖形。 (5) 閃爍評價 使用富士通公司製FMV-BIBLOLOOX T70M/T -將畫 面設定成綠色顯示，將薄膜放置在其前面，評價閃爍。 〇： 完全感覺不到閃爍。 △: 大致感覺不到閃爍。 X : 感覺到閃爍。 (6) 圖像鮮明度 根據JIS-K7105(1999年版），使用SUGA試驗機公 司製IC Μ -1 T，測量光學梳爲0.1 2 5 mm、2 · 0 mm之圖像鮮 明度。 (7) 高折射率層、低折射率層、透明導電性薄膜層之膜厚 將積層有高折射率層、低折射率層、透明導電性薄 膜層之薄膜試料片切成1 mm xio mm之大小，包埋於電子 顯微鏡用環氧樹脂。將其固定在超薄切片機 (Ultramicro tome)的試料保持具，製作平行於經包埋的試 料片之短邊的斷面薄切片。接著’在該切片之薄膜沒有 顯著損傷的部位，利用透過型電子顯微鏡（JEOL公司 製、JEM-2010)，以加速電壓200kV、在明視野觀察倍率 1萬倍進行照片攝影’從所獲得的照片求出膜厚。 -19- 201114602 (8) 高折射率層、低折射率層、透明導電性薄膜層之折射率 針對在矽晶圓上將各層分別以相同的成膜條件製 作而成的試料，利用分光光譜儀（Ellipsometer)(大塚電 子股份有限公司製、FE-5000)，評價550nm之折射率。 且，利用光學模擬軟體對設有各層之薄膜的分光透過率 測量資料進行擬合（Fitting)，算出折射率。此時，各層 之膜厚係使用前述膜厚評價方法所評價之値。再者，確 認如此地算出之各層折射率和矽晶圓上各層折射率沒 有太大的差異。 (9) 透明導電性薄膜的蝕刻時間 將經切成的1 cm X 1 0 cm之透明導電性積層薄膜，浸 漬在4 (TC 1 N之鹽酸水溶液，測量端子間電阻値成爲 1ΜΩ以上之時間。 〔實施例1〕 在含有光聚合引發劑之1〇〇質量份的丙烯酸系樹脂 (大日精化工業公司製、Seikabeam EXF-01 J)，加入作爲溶 劑的甲苯/MEK(8 0/20 :質量比）之混合溶劑，至固體分濃度 成爲50質量％，攪拌且均等地溶解，調製成塗布液。 在兩面具有易接合層之二軸配向透明PET薄膜（東洋 紡績公司製、A43 40、厚度1 88μπ〇，使用邁耶棒（Meyer Bar) 塗布經調製之塗布液形成塗膜厚度形成5 μιη。以8 0 °C進行 1分鐘乾燥後，利用紫外線照射裝置（Eye Graphics公司製、 UB042-5AM-W型）照射紫外線（光量：300mJ/cm 2)，使塗膜 硬化。接著，針對反面也同樣地塗設塗膜後，以180°C施 -20- 201114602 行1分鐘加熱處理，進行減少揮發成分。 且，爲了將積層有該硬化物層之二軸配向透明PET薄 膜進行真空暴露，以降低薄膜的含水量，因此在真空處理 室中進行反捲處理。此時的壓力爲0.00 2Pa，暴露時間爲 20分鐘。且，中央輥的溫度爲401。 接著，在該硬化物層上將銦-錫複合氧化物所構成的透 明導電性薄膜成膜，作爲高折射率層。此時，將濺鍍前的 壓力設定爲O.OOOlPa，利用含有36質量％氧化錫之氧化銦 (住友金屬鑛山公司製、密度 6.9g/cm3)作爲標靶，施加 2W/cm2之DC電力。且，將Ar氣體以130sccm、02氣體以 表面電阻値爲最小時之02流量的3倍流速流過，在0.4Pa 之大氣下利用DC磁控濺鍍法成膜。但是，並非通常的DC， 爲了防止電弧放電，利用日本ENI製RPG-100，以50kHz 周期施加5μ3寬之脈衝。且，中央輥溫度爲〇°C，進行濺 鍍。 且，以濺鏟製程監視器（LEYBOLD INFICON公司製、 XPR2)長時觀測大氣之氧分壓，反饋到氧氣之流量計及DC 電源，使銦-錫複合氧化物薄膜中的氧化度成爲一定。如以 上方式，堆積成折射率1.96、厚度10nm之銦-錫複合氧化 物所構成的高折射率層。如此地獲得之高折射率層之表面 電阻値爲1 χ1〇6Ω/□以上。 再者，爲了在前述高折射層上形成Si02薄膜作爲低折 射率層，而用矽作爲標靶，利用直流磁控濺鍍法、真空度 爲0.27Pa、作爲氣體之Ar氣體爲5 00sccm、02氣體爲 -21 - 201114602 80sccm之流速流過。且，在基板的背面設有〇〇C之冷卻輥， 將透明塑膠薄膜冷卻。對此時的標靶供給7.8W/cm2之電 力，動態率爲23nm· m /分。 且’一面長時觀測成膜中的電壓値，一面反饋到氧氣 之流量計’使電壓値成爲一定。如以上方式，堆積成厚度 35nm、折射率1.46之低折射率層。 接著’在該低折射率層上將銦-錫複合氧化物所構成的 透明導電性薄膜成膜。此時，將濺鍍前的壓力設定爲 O.OOOlPa，利用含有36質量％氧化錫之氧化銦（住友金屬 鑛山公司製、密度6.9g/cm 3)作爲標靶，施加2W/cm2之DC 電力。且，以Ar氣體爲130sccm、02氣體以表面電阻値爲 最小時之流速流過、在0.4P a之大氣下利用DC磁控濺鮭法 成膜。但是，並非通常之DC，爲了防止電弧放電，使用日 本ENI製RPG-100，以50kHz周期施力□ 5μδ寬之脈衝。且， 中央輥溫度爲10 °C，進行濺鍍。 且，利用濺鍍製程監視器（LEYBOLD INFICON公司 製、XPR2)長時觀測大氣之氧分壓，並反饋到氧氣的流量計 及DC電源，使銦-錫複合氧化物薄膜中的氧化度成爲一 定。如以上方式，堆積厚度15nm、折射率1.96之銦-錫複 合氧化物所構成的透明導電性薄膜。 〔實施例2〕 除了將透明導電性薄膜層的膜厚設定爲25nm以外，與 實施例1同樣地製作成透明導電性積層薄膜。 〔實施例3〕 -22- 201114602 除了在硬化物層添加平均粒徑1 ·〇μηι之二氧化矽粒子 以外，與實施例1同樣地製作成透明導電性積層薄膜。 〔實施例4〕 除了在硬化物層添加平均粒徑10·0 μιη之二氧化矽粒 子以外，與實施例1同樣地製作成透明導電性積層薄膜。 〔實施例5〕 除了實施例1中，在硬化物層上將作爲高折射率層之 由鉻-矽複合氧化物（Zr〇2 - Si02)所構成之薄膜成膜以 外，與實施例1同樣地製作成透明導電性積層薄膜。 此時，將濺鍍前的壓力設定爲O.OOOlPa，使用ZrSi2(三 井金屬製）作爲標靶，施加2W/cm2之DC電力，利用直流 磁控濺鍍法、真空度爲0.2 7Pa、作爲氣體之Ar氣體係以 500scCm、〇2氣體係以80sccm之流速流過，進行成膜。且， 長時觀測成膜中的電壓値，並反饋到氧氣的流量計使電壓 値成爲一定。如以上方式，堆積成厚度12 nm、折射率1.75 之高折射率層。 〔實施例6〕 除了實施例1中，在硬化物層上將作爲高折射率層之 由鈦氧化物（Ti〇2)所構成之薄膜成膜以外，與實施例i同 樣地製作成透明導電性積層薄膜。 此時，將濺鍍前的壓力設定爲0.0001Pa，使用Ti(三井 金屬製）作爲標靶，施加2W/cm2之DC電力，利用直流磁 控濺鍍法、真空度爲0.27Pa、作爲氣體之Ar氣體係以 500sccm、〇2氣體係以80sccm之流速流過，進行成膜.且， -23- 201114602 長時觀測成膜中的電壓値，並反饋到氧氣的流量計使電壓 値成爲一定。如以上方式，堆積成厚度8nm、折射率2.29 之高折射率層。 〔實施例7〕 除了實施例1中，在硬化物層上將作爲高折射率層之 由硫化鋅（ZnS)所構成之薄膜成膜以外，與實施例1同樣地 製作成透明導電性積層薄膜。 此時，將濺鍍前的壓力設定爲〇.〇〇〇lPa，使用硫化鋅 (三井金屬製）作爲標靶，施加2W/cm2之13.5 6MH z之高頻 電力，利用磁控濺鍍法、真空度爲〇.27Pa、作爲氣體之Ar 氣體係以500sccm、02氣體係以80sccm之流速流過，進行 成膜。且，長時觀測成膜中的電壓値，並反饋到氧氣的流 量計使電壓値成爲一定。如以上方式，堆積成厚度7.5nm、 折射率2.4 3之高折射率層。 〔實施例8〕 除了實施例1中，在硬化物層上將作爲低折射率層之 由氟化鎂（MgF2)所構成之薄膜成膜以外，與實施例1同樣 地製作成透明導電性積層薄膜。 此時，將濺鍍前的壓力設定爲〇.〇〇〇lPa，使用氟化鎂 (三井金屬製）作爲標靶，施加2W/cm2之13.56MHz之高頻 電力，利用磁控濺鍍法、真空度爲〇.27Pa、作爲氣體之Ar 氣體係以50〇SCcm之流速流過，進行成膜。且，長時觀測 成膜中的電壓値，並反饋到氧氣的流量計使電壓値成爲一 定。如以上方式，堆積成厚度4 0 rim、折射率1.36之低折 -24- 201114602 射率層。 〔實施例9〕 除了實施例1中，在硬化物層上將作爲低折射率層之 由鋁-矽複合氧化物（Al203 -Si02)所構成之薄膜成膜以外， 與實施例1同樣地製作成透明導電性積層薄膜。 此時，將濺鎞前的壓力設定爲 O.OOOlPa，使用 Al-Si(50: 50wt%)(三井金屬製）作爲標靶，施加2W/cm2之 DC電力，利用磁控濺鍍法、真空度爲0.2 7Pa、作爲氣體之 Ar氣體係以500sccm、02氣體係以80sccm之流速流過， 進行成膜。且，長時觀測成膜中的電壓値，並反饋到氧氣 的流量計使電壓値成爲一定。如以上方式，堆積成厚度 3 5m、折射率1.55之低折射率層。 〔實施例1 〇〕 除了實施例1中，將透明導電性薄膜的厚度設定成 1 Onm以外，與實施例1同樣地製作成透明導電性積層薄膜。 〔實施例1 1〕 除了實施例1中，利用作爲標靶的含10質量％氧化錫 之氧化銦（住友金屬鑛山公司製、密度7.lg/cm3)，將透明 導電性薄膜成膜以外，與實施例1同樣地製作透明導電性 積層薄膜。 〔實施例1 2〕 除了實施例1中，利用作爲標靶的含5 5質量％氧化錫 之氧化銦（住友金屬鑛山公司製、密度6.7g/cm3)，將透明 導電性薄膜成膜以外，與實施例1同樣地製作透明導電性 -25- 201114602 積層薄膜。 〔比較例1〕 除了不設高折射率層、低折射率層，將透明導電性薄 膜層的膜厚設定爲2 2nm以外，與實施例1同樣地製作成透 明導電性積層薄膜。 〔比較例2〕 除了不設高折射率層以外，與實施例1同樣地製作成 透明導電性積層薄膜。 〔比較例3〕 除了將低折射率層的膜厚設定爲1 Onm以外，與實施 例1同樣地製作成透明導電性積層薄膜。 〔比較例4〕 除了將低折射率層的膜厚設定爲lOOnm以外，與實施 例1同樣地製作成透明導電性積層薄膜。 〔比較例5〕 除了實施例1中，在硬化物層上將作爲高折射率層之 由鋁-矽複合氧化物（Al203-Si02)所構成之薄膜成膜以外， 與實施例1同樣地製作成透明導電性積層薄膜。 此時，將濺鍍前的壓力設定爲 O.OOOlPa，使用 Al-Si(5 0: 5 0wt%)(三并金屬製）作爲標靶，施加2W/Cm2之 DC電力，利用磁控濺鍍法、真空度爲〇.2 7Pa、作爲氣體之 Ar氣體係以500sccm、02氣體係以80sccm之流速流過， 進行成膜。且，長時觀測成膜中的電壓値，並反饋到氧氣 的流量計使電壓値成爲一定。如以上方式，堆積成厚度 -26- 201114602 2 2m、折射率1 .55之高折射率層。 〔比較例6〕 除了實施例1中，在硬化物層上將作爲低折射率層之 由銷-矽複合氧化物（Zr〇2-SI02)所構成之薄膜成膜以外， 與實施例1同樣地製作成透明導電性積層薄膜。 此時，將濺鑛前的壓力設定爲O.OOOlPa，使用ZrSi2(三 井金屬製）作爲標靶，施加2W/cm2之DC電力，利用直流 磁控濺鍍法、真空度爲0.27Pa、作爲氣體之Ar氣體係以 5 0〇Sccm、〇2氣體係以8〇SCCm之流速流過，進行成膜。且， 長時觀測成膜中的電壓値，並反饋到氧氣的流量計使電壓 値成爲一定。如以上方式，堆積成厚度29nm、折射率1 .75 之低折射率層。 〔實施例1 3〕 除了實施例1中，利用作爲標靶的含5質量％氧化錫 之氧化銦（住友金屬鑛山公司製、密度7.1 g/cm3)，將結晶 質的透明導電性薄膜成膜以外，與實施例1同樣地製作透 明導電性積層薄膜。 -27- 201114602 比麵 CD 〇\ 90.7 ri 91.5 00 o 00 〇 0.95 X 〇 5 m o IT) a\ 89.8 00 ri 92.1 «S ΙΛ — 1 0.95 X 〇 寸 〇\ 90.1 νΐ 91.3 _1 ON (S n 0.95 X 〇 «N CO 950 91.0 麵 91J o； — fO o *s [ 1 0.95 X 〇 CS3 950 91.0 <s 91.8 _1 00 o — 0.95 X 〇 s 1-H 550 89.5 O fO 1 91.8 | _1 rn ΙΛ ri 叫 1 0.95 X 〇 — 實施例 CO τ—1 450 91.4 91.5 •PH 1·^ d — o 1 0.95 〇 〇 6000 CM r—t 1200 91.2 — 91.3 *n — o <s 1 0.95 〇 〇 300 i—t l—t 400 麵 e； ΙΛ ㈣ 91.3 IfJ — fS o d 0.95 〇 〇 VI o rH 13W 91.2 1 91.3 V) ΨΗ 0.95 〇 〇 o 03 950 91.0 _1 00 91.1 — d f〇 o 0.95 〇 〇 — 00 950 91.3 ! _1 in 91.4 rj — d fs o 1 0.95 〇 〇 — 卜 1 92.1 __ s〇 ri 92.2 On — o 卜 o 0.95 1_ 〇 〇 — ZD 950 91.9 rj r4 00 — IT) o 1 1 0.95 〇 〇 — in On 90.8 91.1 fo o o i- 1 i 1 0.95 1 [ 〇 〇 150 寸 a\ 90.3 1 90.7 VI — d d — 〇 X CO 950 90.9 1 91.1 V) «Ν 〇 d 0.82 1 1 〇 〇 CM 420 90.7 <s 90 V) v〇 d 00 o 0.95 0 〇 200 rH 950 91.2 \o «μ 91.3 V) 叫 o — d 0.95 1 〇 〇 150 表面電阻値 (Ω/口） T1 {%) rH ·〇 TO (%) 〇 o H rH o M tw s | 1 g ^ 2 ^ -N ^ h m 百視辨認性 閃燦 _時間（秒） 201114602 根據表1之結果，滿足本申請案發明的範圍之實施例 1~13記載的透明導電性積層薄膜，係即使將透明導電性薄 膜層圖案化，經圖案化的部分亦不顯著，因此配置在液晶 顯示器等顯示體的前面使用時，係屬目視辨認性優異者。 另一方面，高折射率層、低折射率層未被適當地配置、 或膜厚爲不適當之比較例1〜6記載的透明導電性積層薄 膜’其經圖案化的部分顯著，因此目視辨認性差。實施例 1 3雖係目視辨認性優異者，但透明導電性薄膜爲結晶質， 因此蝕刻時間長，圖形加工困難。 [產業上之可利用性] 本發明的透明導電性積層薄膜，係透明導電性薄膜層 的圖案化部和非圖案化部之光學特性差異小，配置在液晶 顯示器等顯示體的前面時，目視辨認性優異，因此作爲靜 電電容式觸控面板用的電極薄膜特別是適合。 【圖式簡單說明】 第1圖係本發明之透明導電性積層薄膜之說明圖。 【主要元件符號說明】 I 〇 :透明導電性積層薄膜 II :透明塑膠薄膜（基材） 1 2 :硬化物層 1 3 :高折射率層 1 4 :低折射率層 15:透明導電性薄膜層 2〇 :介電質層 -29-[Technical Field] The present invention relates to a method in which a high refractive index layer, a low refractive index layer, and a transparent conductive thin film layer are laminated in this order on a substrate made of a transparent plastic film. The invention of a transparent conductive film. In particular, when it is used as a patterned electrode film such as a capacitive touch panel, since the difference in optical characteristics between the portion having the transparent conductive film layer and the removed portion is small, the transparent conductivity of the visibility can be improved. Film. [Prior Art] A transparent conductive film in which a transparent and low-resistance film is laminated on a substrate made of a transparent plastic film is widely used for its use in conductivity, such as liquid crystal display or electric excitation. The use of a flat display such as a light (sometimes slightly EL) display, or a transparent electrode of a resistive touch panel, in the electrical and electronic fields. In recent years, the number of cases in which capacitive touch panels are mounted on mobile phones such as portable phones and portable music terminals has gradually increased. Such an electrostatic capacitive touch panel has a structure in which a dielectric layer is laminated on a patterned conductor, and is grounded via an electrostatic capacitance of a human body by a finger or the like. At this time, the resistance 値 between the pattern electrode and the ground point changes, and the position input is recognized. However, when a conventional transparent conductive film is used, the difference in optical characteristics between the portion having the transparent conductive film layer and the portion to be removed is large, so that the pattern is conspicuous and is distributed in front of the display body such as a liquid crystal display to improve the color or rate. The low-thinness-reducing electric conductivity of the film that has been questioned by the problem has been identified as a layer of the refractive index that is used in the layered reflection prevention processing, etc., using the interference of light. method. In other words, it is proposed to provide a layer having a different refractive index between the transparent conductive thin film layer and the base film, and to use optical interference (Patent Documents 1 to 3). [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. The film can improve the visibility of the transparent conductive film. However, when the transparent conductive film layer is patterned, the problem of the difference in optical characteristics between the portion having the transparent conductive film and the portion having no difference is not considered. Therefore, the patterned portion is remarkable. [Problem to be Solved by the Invention] In view of the above conventional problems, an object of the present invention is to provide a transparent conductive laminated film by using a portion having a transparent conductive thin film layer and being When the difference in optical characteristics of the removed portion is small, the visibility is good and the pattern is not conspicuous when used in a liquid crystal display or the like. [Means for Solving the Problem] The present invention is made in view of the above-described situation, The transparent conductive laminate that solves the above problems is formed by the following constitution. 1. A transparent conductive laminated film characterized by having a structure in which a high refractive index layer, a low refractive index layer, and a transparent conductive thin film layer are laminated in this order on a substrate made of a transparent plastic film; The refractive index of the rate layer 201114602 is 1. 70~2. 50, the film thickness is in the range of 4 to 2 〇 nm; the refractive index of the low refractive index layer is from 1 to 30 to 1.60', and the film thickness is in the range of 20 to 50 nm. 2 . The transparent conductive laminated film according to 1, wherein the transparent conductive laminated film is used in accordance with JIS K7105 (1999 edition). Image sharpness of the transmission method at 125 mm optical comb and use 2. The ratio of the sharpness of the image of the transmission method at the time of the optical comb of 0 mm satisfies the following formula (1)'. 125 mm width comb 値 / 2 mm width comb 値 20. 7 (1) 3 . The transparent conductive laminated film as described in 1 or 2 wherein the transparent conductive film layer is composed of an amorphous metal oxide film. 4. The transparent conductive laminated film according to 3, wherein the transparent conductive thin film layer is an amorphous indium-tin composite oxide having a tin oxide content of 1 〇 to 60% by mass. A transparent conductive laminated film which is characterized in that the transparent conductive thin film layer of the transparent conductive laminated film is formed by patterning the transparent conductive thin film layer of the transparent conductive laminated film according to any one of the above 1 to 4 'The laminate has a refractive index of 1. 40~1. 70 dielectric layer. 6. A transparent conductive laminated film characterized by having a difference in optical characteristics between a portion of a transparent conductive thin film layer formed by patterning of a transparent conductive laminated film according to 5 and a portion which is not satisfied, and satisfies the following ( 2) Formula and (3), 0 S | Tl - T0 | Helmet 1 . 0 (2) 0 S | b1 - b0 | $ 1 . 0 (3) (T1: The total light of the film of the portion having the transparent conductive film layer is 201114602 bl: the color of the film of the portion having the transparent conductive film layer b値, T0: the portion without the transparent conductive film layer' The total light transmittance of the film 'bO: the color of the film of the portion having no transparent conductive film layer b 値) [Effect of the invention] The transparent conductive film of the present invention is applied to a substrate composed of a transparent plastic film. a structure in which a high refractive index layer, a low refractive index layer, and a transparent conductive thin film layer are laminated in this order, and when the transparent conductive thin film layer is patterned, there is a portion of the transparent conductive thin film layer and an optical portion of the non-transparent conductive thin film layer Since the difference in characteristics is small, even if it is disposed in front of a display body such as a liquid crystal display, the pattern of the transparent conductive film layer is not conspicuous, so that deterioration in visibility can be suppressed. [Embodiment] The transparent conductive film of the present invention is formed on a substrate made of a transparent plastic film, and has a structure in which a high refractive index layer, a low refractive index layer, and a transparent conductive thin film layer are laminated in this order. Further, the transparent conductive laminated film is characterized in that a dielectric layer is laminated on the transparent conductive thin film layer of the transparent conductive laminated film after patterning on the transparent conductive thin film layer of the transparent conductive laminated film. . Hereinafter, each layer will be described in detail. (Substrate composed of a transparent plastic film) The substrate made of the transparent plastic film used in the present invention is obtained by melt-extruding a film or a solution in a film form in 201114602, and forming it into a film shape. A film that is stretched, thermally fixed, or thermally relaxed in the longitudinal direction and/or the width direction. Examples of the organic polymer include polyethylene, polypropylene, polyethylene terephthalate, polyethylene-2,6-naphthalenedicarboxylate, polybutylene terephthalate, and resistance to 6, and resistance. 4, resistant wheel 66, resistant to 12' polyimine, polyamidamine, polyether sulfur, polyetheretherketone, polycarbonate, polyarylate, cellulose propionate, polyvinyl chloride, poly Partially dichloroethylene, polyvinyl alcohol, polyether phthalimide, polyphenylene sulfide, polyphenylene ether, polystyrene, syndiotactic polystyrene, norbornene-based polymer, and the like. Among these organic polymers, polyethylene terephthalate, polybutylene terephthalate, polyethylene-2,6-naphthalenedicarboxylate, syndiotactic polystyrene, norbornene polymerization Materials, polycarbonates, polyarylates, etc. are suitable. Further, the organic polymers may be copolymerized with a small amount of monomers of other organic polymers, and other organic polymers may be mixed. The thickness of the substrate composed of the transparent plastic film used in the present invention is preferably from 10 to 300 μm, more preferably from 70 to 260 μm. When the thickness of the plastic film is less than ΙΟμϊη, the mechanical strength is insufficient, and it is difficult to operate in the pattern forming step of the transparent conductive film, which is not preferable. On the other hand, if the thickness exceeds 30 μm, the thickness of the touch panel becomes too thick, and thus it is not suitable for use in a mobile machine or the like. The substrate composed of the transparent plastic film used in the present invention is as long as it is not damaged. Within the scope of the object of the present invention, the film may be subjected to surface activation treatment such as corona discharge treatment, glow discharge treatment, flame treatment, ultraviolet irradiation treatment, electron beam irradiation treatment, or ozone treatment. In addition, the base material of the transparent plastic film used in the present invention is intended to improve the adhesion to the high refractive index layer, to impart chemical resistance, and to prevent the precipitation of low molecular weight substances such as oligomers. The cured resin is a resin which is hardened by application of energy such as heat, ultraviolet light, or electron beam irradiation, and is not particularly limited, and examples thereof include polyfluorene resin. , acrylic resin, methacrylate resin, epoxy resin, melamine resin, polyester resin, urethane resin, and the like. From the viewpoint of productivity, a curable resin containing an ultraviolet curable resin as a main component is preferred. Examples of such an ultraviolet curable resin include a polyfunctional acrylate resin of acrylic acid or methacrylic acid ester of a polyhydric alcohol, a diisocyanate, a polyhydric alcohol, and a hydroxyalkyl ester of acrylic acid or methacrylic acid. A polyfunctional urethane acrylate resin or the like. If necessary, a monofunctional monomer such as vinylpyrrolidone, methyl methacrylate, styrene or the like may be added to the polyfunctional resin to be copolymerized. Further, in order to improve the adhesion between the high refractive index layer and the cured layer, it is effective to further surface-treat the cured layer in order to improve the adhesion between the transparent conductive film and the cured layer. Specific examples of the method include a discharge treatment method by irradiation of glow discharge or corona discharge, a method of adding a carbonyl group, a carboxyl group, a radical, a chemical treatment using an acid or a base, and an increase in polarity such as an amine group, a hydroxyl group, or a carbonyl group. The basis of the method. The ultraviolet curable resin is usually used by adding a photopolymerization initiator. The photopolymerization initiator is not particularly limited to a known compound which absorbs ultraviolet rays to generate a radical of 201114602. Examples of such a photopolymerization initiator include various benzoins, benzophenones, benzophenones, and the like. . The amount of the photopolymerization initiator to be added is preferably 1 to 5 parts by mass based on 1 part by mass of the ultraviolet curable resin. The concentration of the resin component in the coating liquid can be appropriately selected in consideration of the viscosity of the coating method and the like. For example, the ratio of the total amount of the ultraviolet curable resin and the photopolymerization initiator in the coating liquid is usually 20 to 80% by mass. Further, in the coating liquid, it is also possible to add other well-known additives such as a polyfluorene-based surfactant, a leveling agent such as a fluorine-based surfactant, and the like. In the present invention, the prepared coating liquid is applied onto a substrate composed of a transparent plastic film. The coating method is not particularly limited, and a conventional method such as a hard coating method, a gravure coating method, or a reverse roll coating method can be used. Moreover, the thickness of the hardened layer is 0. The range of 1~15pm is better. More preferably 0. 5~ΙΟμιη, especially good for 1~8μιη. The thickness of the hardened layer is less than Ο. In the case of ίμιη, since the crosslinked structure cannot be sufficiently formed, the chemical resistance is liable to be lowered, and the adhesion due to the low molecular weight of the oligomer or the like is likely to be lowered. On the other hand, when the thickness of the cured layer is more than 15 μm, the productivity tends to be lowered. Further, in order to improve the slidability of the film or the conductive laminated film provided with the cured layer, it is also preferable to contain the particles in the cured layer. In this case, it is preferred to contain particles in the cured layer to satisfy the following conditions. That is, according to the JISK7105 (1999 edition), the use of 0. The image sharpness of the transmission method at 125 mm optical comb, and the use of 2. 0 mm light -10 - 201114602 The ratio of the sharpness of the image of the transmissive method when combing is designed in 〇 · 12 5 mm width comb 値 2 hidden width comb 値 20. The range of 7 is better. More preferably 〇·8 or more. Not up to 0. At 7 o'clock, when it is placed in front of a display body such as a high-definition liquid crystal display, the visibility is lowered due to the occurrence of flicker. The particles to be contained in the cured layer are not particularly limited, and examples thereof include inorganic particles (for example, ceria, calcium carbonate, and the like) and heat-resistant organic particles (for example, polyfluorene oxide particles, PTFE particles, and polyimide particles). And crosslinked polymer particles (crosslinked PS particles, crosslinked acrylic particles, etc.). The average particle diameter of the particles (according to electron microscopy) is preferably ~·〇5~5μηη, and more preferably 0·1~2μηη. The average particle size is less than 〇. When 〇 5 μm, it is difficult to disperse the particles, and it is not preferable to increase the number of coarse particles after agglomerating the particles. When the average particle diameter is more than 5 μm, when it is placed in front of a display body such as a high-definition liquid crystal display, the flicker phenomenon may be caused to reduce the visibility. (High refractive index layer) The refractive index of the high refractive index layer which can be used in the present invention is 1. 70~2. The range of 50 is preferably 1. 90~2. 30, more preferably 1. 90~2. 10. If it is less than 1 - 70, the difference in refractive index from the low refractive index layer is too small. Therefore, when the transparent conductive thin film layer is patterned, it is difficult to make the optical characteristics of the portion having the transparent conductive thin film layer and the non-existing portion close to each other. On the other hand, the refractive index is more than 2. At 50 o'clock, it is difficult to make the pattern in the oblique direction inconspicuous, and materials suitable for industrial use do not exist. Specific examples of the high refractive index layer include Ti〇2, Nb2 05, Zr〇2, Ta2〇5, ZnO, In2〇3, Sn〇2, and the like, and composite oxides thereof and zinc sulfide ZnS. Among these, from the viewpoint of productivity, ZnO, I n2 〇 3' SnO 2 and these composite oxides are preferred. Further, in order to adjust the refractive index of the oxygen or the sulfide or the sulfide, any oxide or sulfide may be added. The film thickness of the high refractive index layer is 4 to 2 Å, preferably 7 to 15 nm, more preferably 8 to 13 nm. When the film thickness is less than 4 nm, the film becomes discontinuous, and the stability of the film is lowered. On the other hand, when the film thickness exceeds 2 nm, the light reflection becomes strong. Therefore, when the transparent conductive thin film layer is patterned, it is difficult to make the optical characteristics of the portion having the transparent conductive thin film layer and the non-existing portion close to each other. When the front surface of the display body such as a liquid crystal display is used, the pattern of the transparent conductive thin film layer is remarkable, and the visibility is lowered. However, it is preferable to control the refractive index and film thickness of the high refractive index layer arbitrarily, and it is preferable to control the optical film thickness (refractive index X film thickness) to be constant. As a film forming method of the high refractive index layer in the present invention, a vacuum vapor deposition method, a sputtering method, a CVD method, an ion plating method, a spray method, or the like is known, and the above method can be suitably used in accordance with the required film thickness, but From the viewpoint of reducing film thickness unevenness, a sputtering method is preferred. In the sputtering method, there are generally a reactive sputtering method in which a reactive gas is introduced from a metal target to produce a metal oxide, and a method of producing a metal oxide from an oxide target. In the reactive sputtering method, there is a transition region in which the film formation rate rapidly changes depending on the flow rate of the reactive gas. Therefore, in order to suppress the unevenness of the film thickness, it is preferred to use an oxide target. (Low refractive index layer The refractive index of the low refractive index layer used in the present invention is 1. 30~1. 60, preferably 1. 4~1. 1. 55, more preferably 1.43~1. 50. If the refractive index is less than 1. 30, it becomes a porous film, and thus the electrical properties of the transparent conductive thin layer -12-201114602 formed thereon are lowered. On the other hand, if the refractive index is more than 1. 60', the interference with the light of the transparent conductive thin film layer becomes too weak. Therefore, when the transparent conductive thin film layer is patterned, it is difficult to make the optical characteristics of the portion having the transparent conductive thin film layer and the non-existing portion close to each other, and to be disposed in the liquid crystal. When the front surface of the display body such as a display is used, the pattern of the transparent conductive film layer is remarkable, and the visibility is lowered. It can be seen that the visibility is reduced. Specific examples of the low refractive index layer include a transparent metal oxide such as Si〇2 and Al2〇3, a composite metal oxide such as SiO 2 -Al 203, a metal fluoride such as CuF 2 , CeF 2 , MnF 2 or MgF 2 , and the like. Fluoride. Further, in order to adjust the refractive index of the oxide or fluoride, any oxide or sulfide may be added. The film thickness of the low refractive index layer is 20 to 50 nm, preferably 25 to 45 nm, more preferably 30 to 40 nm. When the thickness exceeds 50 nm, the wavelength dependence becomes too strong due to interference with the light of the transparent conductive thin film layer. Therefore, when the transparent conductive thin film layer is patterned, it is difficult to make the transparent conductive thin film layer portion and the non-existing portion. The optical properties are close. On the other hand, when it is less than 20 nm, it is difficult to cause interference with light of the transparent conductive thin film layer, and the transmittance cannot be improved. Therefore, when the transparent conductive thin film layer is patterned, it is difficult to form the transparent conductive thin film layer. When the optical characteristics of the partially and non-existing portions are close to each other, and the surface of the transparent conductive thin film layer is significantly "visually degradable" when disposed on the front surface of a display such as a liquid crystal display. However, it is preferable to control the refractive index and film thickness of the low refractive index layer arbitrarily, and it is preferable to control the optical film thickness (refractive index x film thickness) to be constant. As a film forming method of the low refractive index layer in the present invention, it is known that the film thickness of the vacuum-13-201114602 vapor deposition method, the sputtering method, the CVD method, the ion plating method, and the spray method is appropriately used. From the viewpoint of reducing the film thickness, sputtering is preferred. Generally, DC or AC sputtering is used when forming by sputtering. In order to increase the film formation rate, the control of the flow rate of the control body flow is used to set the voltage of the DC or AC power source, or the intensity of the luminescence in the plasma of the plasma radiation method for controlling the flow rate of the reactive gas is kept constant. (Transparent Conductive Thin Film Layer) Examples of the transparent conductive film in the present invention include tin oxide, zinc oxide, indium-tin composite oxide, tin-bismuth complex oxy-aluminum composite oxide, and indium-zinc composite oxide. Wait. Among these, from the viewpoint of qualitative and circuit processability, indium-tin composite oxygenation. In the present invention, the transparent conductive thin film layer can be made thin by transparent conductive thin layer by setting the surface resistance 値 of the laminated film to 50 to 200 Ο Ω / port to 100 - 1 500 Ω / □. Touch panel, etc. When the surface resistance 値 is less than 50 Ω/匚I, or the position of the touch panel is deteriorated, the film thickness of the transparent conductive film is 10 to 25 nm in the range of 4 to 30 nm. The film thickness of the transparent conductive film is less than 4 nm to form a continuous film, and it is difficult to obtain good conductivity. When the film thickness of the transparent conductive film is thicker than 3 Onm, when the transparent film layer is patterned, it is difficult to make the optical characteristics of the portion having the transparent conductive film layer close. The transparent conductive film may be crystalline or amorphous. If it is equal, the reactive reactive gas that can be mismatched is kept so that the specific indium, oxonium, and zinc are more transparent and transparent from the environmentally stable material, and it is better to use the film at 2000 Ω/〇. When it is better, it is difficult - aspect, the conductivity is thin and there is no need to be transparent. - 201114602 The mechanical strength of the film is higher, the crystal quality is better. When the transparent conductive film is excellent in etching such as flexibility or fine patterning, the transparent conductive film layer is preferably amorphous. When a transparent conductive thin film layer of a crystalline material is used, when the transparent conductive film is patterned with hydrochloric acid or the like, it is difficult to dissolve. Therefore, the processing takes time and the problem that a fine pattern cannot be accurately obtained is caused. In order to obtain an amorphous transparent conductive thin film layer, the doping amount is preferably adjusted. For example, when the indium-tin composite oxide is used as the transparent conductive thin film layer, the content of the tin oxide is preferably from 10 to 60% by mass, more preferably from 20 to 50% by mass. When the tin oxide content is less than 10% by mass, it is difficult to suppress crystallization in film formation. On the other hand, when the content of the tin oxide is more than 60% by mass, it is difficult to increase the density of the target, and discharge abnormality is likely to occur during production, which is not preferable from the viewpoint of productivity. Further, from the viewpoint of productivity, the transparent conductive film and the high refractive index layer are preferably the same composition. When the composition is different, it is necessary to have a target for a high refractive index and a transparent conductive film, and a cathode, and the device becomes a bulky device. The layer structure of the transparent conductive film may be a single layer structure or a laminated structure of two or more layers. In the case of a transparent conductive film having a laminated structure of two or more layers, the metal oxides constituting each layer may be the same or different. As a film forming method of the transparent conductive film in the present invention, a vacuum shovel method, a sputtering method, a CVD method, an ion plating method, a spray method, or the like is known, and the above method can be suitably used for the film thickness required for the blending. -15- 201114602 For example, in the case of the sputtering method, a usual sputtering method using an oxide target or a reactive sputtering method using a metal target is used. At this time, as the reactive gas, oxygen, nitrogen, or the like may be introduced, or ozone, ozone irradiation, plasma irradiation, or ion assist may be used. Further, a bias voltage such as direct current, alternating current, or high frequency may be applied to the substrate insofar as the object of the present invention is not impaired. (The refractive index is 1. 40~1. 70 dielectric layer (protective layer)) In the present invention, the refractive index is 1. 40~1. The dielectric layer of 70 is a layer having the following purpose, and is used as a protective layer for laminating a transparent conductive film when a transparent conductive laminated film is used as a member for displaying a transparent conductive film, and The change in electrostatic capacitance when a finger or the like is pressed becomes large, and the purpose of improving the accuracy of the position input is as follows. 40~1. As the dielectric layer of 70, for example, a transparent metal oxide such as SiO 2 or Al 2 〇 3, a composite metal oxide such as SiO 2 -Al 203, an organic material composed of acrylic acid, polyfluorene oxide or a polyester resin is used. In the conductive laminated film of the present invention, even in the state in which such a dielectric layer is provided, the pattern is not easily noticeable, and the visibility is excellent. (Optical Characteristics of Transparent Conductive Laminate Film) In the invention of the present invention, after the transparent conductive thin film layer of the transparent conductive laminated film is patterned, the refractive index is set to 1. 4 0~1. In the state in which the dielectric layer of the dielectric layer is on the side of the transparent conductive film layer, the difference in optical characteristics between the portion having the transparent conductive film layer and the portion having no transparency is important, and the following (2) and (3) are satisfied. The style is better. 0 ^ | T 1 - TO 1 ^1. 0 (2) 0 ^ 丨bl - b0 1 ^1. 0 (3) -16- 201114602 (τι: the total light transmittance of the film of the portion having the transparent conductive film layer, bl: the color of the film of the portion having the transparent conductive film layer, T: no transparent conductivity The total light transmittance of the film of a portion of the film layer, bO: the color of the film of the portion having no transparent conductive film layer, 丁1 is preferably 9% by mass or more, more preferably 90%. More than 5%, 1) 1 is -2 to 2, more preferably -1. 0~1. 5, even better for 〇~1. 5. T 1 , b0, T0, and b0 are based on the interference of the reflected light between the layers, and the refractive index of each layer in the high refractive index layer is 1. 70~2. 50. The film thickness of the high refractive index layer is 4 to 20 nm, and the refractive index of the low refractive index layer is 1. 30~1. 60. The film thickness of the low refractive index layer is adjusted in the range of 20 to 50 nm. Further, b値 is adjusted in the above adjustment, and the peak of the spectral transmittance is set in the range of 45 0 to 5 3 Onm. The peak of the better spectral transmittance is 470 to 510 nm. Further, it is used according to the JISK7105 (1999 edition) of the transparent conductive laminated film. The image sharpness of the transmission method at 125 nun optical comb, and the use of 2. The ratio of the sharpness of the image through the optical comb of 0 is 0. 7 or more is preferred. Not up to 〇. At 7 o'clock, when it is placed in front of a display such as a fine liquid crystal display, the visibility is lowered due to the occurrence of flicker. [Examples] Hereinafter, the present invention will be described in further detail based on examples, but the present invention is not limited by the examples. Further, the properties of the transparent conductive laminated film were measured by the following methods. (1) Total light transmittance According to JIS-K7136, the total light transmittance was measured using the NDH-1001DP manufactured by Nippon Denshoku Industries Co., Ltd. Further, ΤΙ and T0 in the formulas (2) and (3) are based on the patterned transparent conductive laminated film, and have a refractive index of 1. 40~1. The dielectric layer of 70 is laminated on the side of the transparent conductive film layer, and the portion having the transparent conductive film layer and the portion having no transparent conductive film layer are measured. (2) Surface resistance 値 The surface resistance 値 was measured by the 4-terminal method in accordance with JIS-K7194. The measuring device uses a Mitsubishi oil-based (stock) LotestAMCP-T400. (3) Color b値 According to JIS-K7105, the color b値 is measured with a standard light C/2 using a color difference meter (made by Nippon Denshoku Industries Co., Ltd., ZE-2 00 0). Further, b 1 and b 0 in the formulas (2) and (3) are based on the patterned transparent conductive laminated film, and have a refractive index of 1. 40~ 1. The dielectric layer of 70 is laminated on the side of the transparent conductive film layer, and the portion having the transparent conductive film layer and the portion having no transparent conductive film layer are measured. (4) Evaluation of visual recognition After the resist was printed on a transparent conductive laminated film and immersed in 1 N hydrochloric acid, it was impregnated with an alkali to form a pattern of 1 × 3 cm. Will have a refractive index 1. A biaxially oriented polyethylene terephthalate (hereinafter abbreviated as PET) film of an acrylic adhesive layer of 52 is bonded to the transparent conductive film side as a protective film -18-201114602. Using the FMV-BIBLOLOOXT70M/T manufactured by Fujitsu Co., Ltd., the screen was set to white display, and the film with the protective film attached was placed in front of it, and the look and feel of the figure was evaluated from various angles. 〇 ·· The figure was hardly visible. △: There are few graphics. X '· See the graph. (5) Flicker evaluation Using FMV-BIBLOLOOX T70M/T - made by Fujitsu Corporation, the screen was set to a green display, and the film was placed in front of it to evaluate the flicker. 〇: I can't feel the flicker at all. △: There is almost no flicker. X : I feel flickering. (6) Image sharpness According to JIS-K7105 (1999 edition), the IC Μ -1 T was used by the SUGA test machine, and the optical comb was measured to be 0. 1 2 5 mm, 2 · 0 mm image sharpness. (7) Film thickness of the high refractive index layer, the low refractive index layer, and the transparent conductive thin film layer The thin film sample sheet in which the high refractive index layer, the low refractive index layer, and the transparent conductive thin film layer are laminated is cut into 1 mm x io mm Size, embedded in epoxy resin for electron microscopy. This was attached to a sample holder of an ultramicrotome to prepare a thin section of a section parallel to the short side of the embedded sample piece. Then, a photograph was taken from a photograph obtained by using a transmission electron microscope (JE-2010, manufactured by JEOL Co., Ltd.) at an acceleration voltage of 200 kV and a viewing magnification of 10,000 times in the portion where the film of the slice was not significantly damaged. The film thickness was determined. -19- 201114602 (8) The refractive index of the high refractive index layer, the low refractive index layer, and the transparent conductive thin film layer is determined by using a spectroscopic spectrometer for a sample prepared by using the same film formation conditions on each layer of the germanium wafer. Ellipsometer (manufactured by Otsuka Electronics Co., Ltd., FE-5000) evaluated the refractive index at 550 nm. Further, the optical transmittance software was used to fit the spectral transmittance measurement data of the film provided with each layer, and the refractive index was calculated. At this time, the film thickness of each layer was evaluated using the film thickness evaluation method described above. Furthermore, it is confirmed that the refractive index of each layer thus calculated and the refractive index of each layer on the germanium wafer are not greatly different. (9) Etching time of the transparent conductive film The cut transparent thin conductive film of 1 cm X 10 cm was immersed in 4 (TC 1 N aqueous hydrochloric acid solution, and the resistance 値 between the terminals was measured to be 1 Μ Ω or more. [Example 1] Toluene/MEK (8 0/20: mass) as a solvent was added to an acrylic resin (Seikabeam EXF-01 J, manufactured by Daisei Seiki Co., Ltd.) containing 1 part by mass of a photopolymerization initiator. The mixed solvent of the ratio of the solid solvent was 50% by mass, and the mixture was stirred and uniformly dissolved to prepare a coating liquid. A biaxially oriented transparent PET film having an easy-bonding layer on both sides (A43, A13, thickness 1) 88 μπ〇, coating the prepared coating liquid with Meyer Bar to form a coating film thickness to form 5 μm, drying at 80 ° C for 1 minute, and then using an ultraviolet irradiation device (made by Eye Graphics, UB042-5AM- W type) is irradiated with ultraviolet light (light quantity: 300 mJ/cm 2), and the coating film is hardened. Then, the coating film is applied similarly to the reverse side, and then heat-treated at 180 ° C for -20-201114602 for 1 minute to reduce the volatilization. Ingredients. , In order to have two axes of the laminated cured layers are exposed to vacuum with transparent PET film to reduce the water content of the film, and therefore anti-roll processing in a vacuum processing chamber pressure is zero at this time. 00 2Pa, exposure time is 20 minutes. Moreover, the temperature of the center roll was 401. Next, a transparent conductive film made of an indium-tin composite oxide is formed on the cured layer to form a high refractive index layer. At this time, set the pressure before sputtering to O. OOOlPa, using indium oxide containing 36% by mass of tin oxide (manufactured by Sumitomo Metal Mining Co., Ltd., density 6. 9 g/cm3) was applied as a target, and DC power of 2 W/cm 2 was applied. Further, the Ar gas is flowed at a flow rate of 3 times of the 02 flow rate when the surface resistance 値 is minimized at 130 sccm and 02 gas, at 0. Film formation was carried out by DC magnetron sputtering in an atmosphere of 4 Pa. However, it is not a normal DC, and in order to prevent arc discharge, a pulse of 5 μ3 width is applied at a cycle of 50 kHz using RPG-100 manufactured by ENI, Japan. Further, the center roll temperature was 〇 ° C and sputtering was performed. In addition, the oxygen partial pressure of the atmosphere is observed for a long time by a shovel process monitor (manufactured by LEYBOLD INFICON Co., Ltd., XPR2), and is fed back to the oxygen flow meter and the DC power source to make the oxidation degree in the indium-tin composite oxide film constant. As in the above manner, it is deposited into a refractive index of 1. 96. A high refractive index layer composed of an indium-tin composite oxide having a thickness of 10 nm. The surface resistance 値 of the high refractive index layer thus obtained is 1 χ 1 〇 6 Ω / □ or more. Furthermore, in order to form a SiO 2 film on the high refractive layer as a low refractive index layer, and using ruthenium as a target, a DC magnetron sputtering method is used, and the degree of vacuum is 0. 27 Pa, the Ar gas as a gas is 500 sccm, and the 02 gas is a flow rate of -21 - 201114602 80 sccm. Further, a cooling roll of 〇〇C was provided on the back surface of the substrate to cool the transparent plastic film. The target supply at this time is 7. The power of 8 W/cm 2 has a dynamic rate of 23 nm·m /min. Further, when the voltage 値 in the film formation is observed for a long period of time, the flow rate 反馈 is fed back to the oxygen gas to make the voltage 一定 constant. As in the above manner, the thickness is 35 nm and the refractive index is 1. 46 low refractive index layer. Next, a transparent conductive film made of an indium-tin composite oxide is formed on the low refractive index layer. At this time, set the pressure before sputtering to O. OOOlPa, using indium oxide containing 36% by mass of tin oxide (manufactured by Sumitomo Metal Mining Co., Ltd., density 6. 9 g/cm 3) As a target, 2 W/cm 2 of DC power was applied. Further, the Ar gas is 130 sccm, and the 02 gas flows at a flow rate at which the surface resistance 値 is the minimum, at 0. In the atmosphere of 4P a, a DC magnetron sputtering method is used to form a film. However, it is not a normal DC, and in order to prevent arc discharge, a pulse of □ 5 μδ width is applied at a cycle of 50 kHz using a RPG-100 manufactured by Japan ENI. Further, the center roll temperature was 10 ° C and sputtering was performed. In addition, the oxygen partial pressure of the atmosphere is observed for a long time by a sputtering process monitor (XPR2 manufactured by LEYBOLD INFICON Co., Ltd.), and the oxygen flow meter and the DC power source are fed back to make the oxidation degree in the indium-tin composite oxide film constant. . As in the above manner, the deposition thickness is 15 nm and the refractive index is 1. A transparent conductive film composed of 96 indium-tin composite oxide. [Example 2] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the film thickness of the transparent conductive thin film layer was changed to 25 nm. [Example 3] -22-201114602 A transparent conductive laminated film was produced in the same manner as in Example 1 except that the cerium oxide particles having an average particle diameter of 1 ?〇ηη were added to the cured layer. [Example 4] A transparent conductive laminated film was produced in the same manner as in Example 1 except that cerium oxide particles having an average particle diameter of 10·0 μη were added to the cured layer. [Example 5] In the same manner as in Example 1, except that a film composed of a chromium-bismuth composite oxide (Zr〇2-SiO2) as a high refractive index layer was formed on the cured layer. A transparent conductive laminated film was produced. At this time, set the pressure before sputtering to O. OOOlPa, using ZrSi2 (manufactured by Mitsui Metals Co., Ltd.) as a target, applies DC power of 2 W/cm2, using DC magnetron sputtering, and the degree of vacuum is 0. 2 7 Pa, an Ar gas system as a gas was flowed at a flow rate of 80 sccm at a flow rate of 500 scCm and a helium gas system to form a film. Moreover, the flow rate 値 in the film formation for a long time and the flow meter fed back to the oxygen makes the voltage 値 constant. As in the above manner, the thickness is 12 nm and the refractive index is 1. 75 high refractive index layer. [Example 6] A transparent conductive film was produced in the same manner as in Example i except that a film made of titanium oxide (Ti〇2) as a high refractive index layer was formed on the cured product layer. A laminated film. At this time, the pressure before sputtering is set to 0. 0001Pa, using Ti (manufactured by Mitsui Metals Co., Ltd.) as a target, applying 2 W/cm 2 of DC power, using DC magnetron sputtering, and having a vacuum of 0. 27Pa, the Ar gas system as a gas flows through a 500sccm, 〇2 gas system at a flow rate of 80sccm to form a film. Moreover, -23- 201114602 long-term observation of the voltage 値 in the film formation, and the flow meter fed back to the oxygen makes the voltage 値 become constant. As in the above manner, the thickness is 8 nm and the refractive index is 2. 29 high refractive index layer. [Example 7] A transparent conductive laminated film was produced in the same manner as in Example 1 except that a film made of zinc sulfide (ZnS) as a high refractive index layer was formed on the cured layer. . At this time, set the pressure before sputtering to 〇. 〇〇〇lPa, using zinc sulfide (manufactured by Mitsui Metals Co., Ltd.) as a target, applying 2W/cm2 of 13. 5 6 MHz high frequency power, using magnetron sputtering, vacuum is 〇. 27 Pa, an Ar gas system as a gas was passed through a 500 sccm, 02 gas system at a flow rate of 80 sccm to form a film. Further, the voltage 値 in the film formation is observed for a long time, and the flow meter fed back to the oxygen gas makes the voltage 値 constant. As in the above manner, it is stacked into a thickness of 7. 5nm, refractive index 2. 4 3 high refractive index layer. [Example 8] A transparent conductive laminate was produced in the same manner as in Example 1 except that a film made of magnesium fluoride (MgF2) as a low refractive index layer was formed on the cured layer. film. At this time, set the pressure before sputtering to 〇. 〇〇〇lPa, using magnesium fluoride (manufactured by Mitsui Metals Co., Ltd.) as a target, applying 2W/cm2 of 13. High frequency power of 56MHz, using magnetron sputtering method, the degree of vacuum is 〇. 27 Pa, an Ar gas system as a gas, was flowed at a flow rate of 50 〇SCcm to form a film. Moreover, the long-term observation of the voltage 値 in the film formation and the flow meter fed back to the oxygen makes the voltage 値 a certain. As in the above manner, it is stacked to a thickness of 40 rim and a refractive index of 1. 36 low fold -24- 201114602 rate layer. [Example 9] A film produced of an aluminum-niobium composite oxide (Al203-SiO2) as a low refractive index layer was formed on the cured layer in the same manner as in Example 1 except that the film was formed in the same manner as in Example 1. A transparent conductive laminated film. At this time, set the pressure before splashing to O. OOOlPa, using Al-Si (50: 50wt%) (manufactured by Mitsui Metals Co., Ltd.) as a target, applying 2W/cm2 of DC power, using magnetron sputtering method, the degree of vacuum is 0. 2 7 Pa, an Ar gas system as a gas was passed through a 500 sccm, 02 gas system at a flow rate of 80 sccm to form a film. Moreover, the voltage 値 in the film formation is observed for a long time, and the flow meter fed back to the oxygen makes the voltage 値 constant. As in the above manner, the thickness is 3 5 m and the refractive index is 1. 55 low refractive index layer. [Example 1] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the thickness of the transparent conductive film was set to 1 Onm. [Example 1 1] In addition to Example 1, indium oxide containing 10% by mass of tin oxide was used as a target (manufactured by Sumitomo Metal Mining Co., Ltd., density 7. Lg/cm3) A transparent conductive laminated film was produced in the same manner as in Example 1 except that the transparent conductive film was formed into a film. [Example 1 2] In addition to Example 1, indium oxide containing 55 mass% of tin oxide as a target (manufactured by Sumitomo Metal Mining Co., Ltd., density 6. 7 g/cm3) A transparent conductive film of -25 - 201114602 was produced in the same manner as in Example 1 except that the transparent conductive film was formed into a film. [Comparative Example 1] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the high refractive index layer and the low refractive index layer were not provided, and the thickness of the transparent conductive thin film layer was changed to 2 2 nm. [Comparative Example 2] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the high refractive index layer was not provided. [Comparative Example 3] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the film thickness of the low refractive index layer was set to 1 Onm. [Comparative Example 4] A transparent conductive laminated film was produced in the same manner as in Example 1 except that the film thickness of the low refractive index layer was changed to 100 nm. [Comparative Example 5] A film produced of an aluminum-niobium composite oxide (Al203-SiO 2) as a high refractive index layer was formed on the cured layer in the same manner as in Example 1 except that the film was formed in the same manner as in Example 1. A transparent conductive laminated film. At this time, set the pressure before sputtering to O. OOOlPa, using Al-Si (5 0: 50 wt%) (made of tri-metal) as the target, applying 2W/Cm2 of DC power, using magnetron sputtering method, vacuum degree is 〇. 2 7 Pa, an Ar gas system as a gas was passed through a 500 sccm, 02 gas system at a flow rate of 80 sccm to form a film. Moreover, the voltage 値 in the film formation is observed for a long time, and the flow meter fed back to the oxygen makes the voltage 値 constant. As in the above manner, the thickness is -26-201114602 2 2m and the refractive index is 1. 55 high refractive index layer. [Comparative Example 6] In the same manner as in Example 1, except that a film composed of a pin-bismuth composite oxide (Zr〇2-SI02) as a low refractive index layer was formed on the cured layer. A transparent conductive laminated film was produced. At this time, the pressure before splashing is set to O. OOOlPa, using ZrSi2 (manufactured by Mitsui Metals Co., Ltd.) as a target, applies DC power of 2 W/cm2, using DC magnetron sputtering, and the degree of vacuum is 0. 27 Pa, a gas system of Ar gas was passed through a 50 〇 Sccm, 〇 2 gas system at a flow rate of 8 〇 SCCm to form a film. Moreover, the flow rate 値 in the film formation for a long time and the flow meter fed back to the oxygen makes the voltage 値 constant. As described above, it was deposited to a thickness of 29 nm and a refractive index of 1. 75 low refractive index layer. [Example 1 3] In addition to Example 1, indium oxide containing 5 mass% of tin oxide as a target (manufactured by Sumitomo Metal Mining Co., Ltd., density 7. 1 g/cm3) A transparent conductive laminated film was produced in the same manner as in Example 1 except that a crystalline transparent conductive film was formed. -27- 201114602 比面 CD 〇\ 90. 7 ri 91. 5 00 o 00 〇 0. 95 X 〇 5 m o IT) a\ 89. 8 00 ri 92. 1 «S ΙΛ — 1 0. 95 X 〇 inch 〇 \ 90. 1 νΐ 91. 3 _1 ON (S n 0. 95 X 〇 «N CO 950 91. 0 face 91J o; — fO o *s [ 1 0. 95 X 〇 CS3 950 91. 0 <s 91.8 _1 00 o — 0.95 X 〇s 1-H 550 89.5 O fO 1 91.8 | _1 rn ΙΛ ri 1 0.95 X 〇—Example CO τ—1 450 91.4 91.5 •PH 1·^ d — o 1 0.95 〇〇6000 CM r-t 1200 91.2 — 91.3 *n — o <s 1 0.95 〇〇300 i-tl—t 400 face e; ΙΛ (4) 91.3 IfJ — fS od 0.95 〇〇VI o rH 13W 91.2 1 91.3 V) ΨΗ 0.95 〇〇o 03 950 91.0 _1 00 91.1 — df〇 o 0.95 〇〇— 00 950 91.3 ! _1 in 91.4 rj — d fs o 1 0.95 〇〇 — 卜 1 92.1 __ s〇ri 92.2 On — o 卜 o 0.95 1_ 〇〇 — ZD 950 91.9 rj r4 00 — IT) o 1 1 0.95 〇〇 — in On 90.8 91.1 fo oo i- 1 i 1 0.95 1 [ 〇〇150 inch a\ 90.3 1 90.7 VI — dd — 〇X CO 950 90.9 1 91.1 V) «Ν 〇d 0.82 1 1 〇 〇CM 420 90.7 <s 90 V) v〇d 00 o 0.95 0 〇200 rH 950 91.2 \o «μ 91.3 V) Called o — d 0.95 1 〇〇150 Surface resistance 値 (Ω/port) T1 {%) rH ·〇TO (%) 〇o H rH o M tw s | 1 g ^ 2 ^ -N ^ hm Vision recognition flash _ time (seconds) 201114602 According to the results of Table 1, the embodiment 1 satisfying the scope of the invention of the present application The transparent conductive laminated film described in the above-mentioned is not particularly conspicuous in patterning the transparent conductive thin film layer. Therefore, when it is used in front of a display such as a liquid crystal display, it is excellent in visibility. . On the other hand, in the transparent conductive laminated film described in Comparative Examples 1 to 6 in which the high refractive index layer and the low refractive index layer are not properly disposed or the film thickness is not appropriate, the patterned portion is remarkable, and thus the visual recognition is performed. Poor sex. [Example 1] Although the transparent conductive film is excellent in crystallinity, the etching time is long and pattern processing is difficult. [Industrial Applicability] The transparent conductive laminated film of the present invention has a small difference in optical characteristics between the patterned portion and the non-patterned portion of the transparent conductive thin film layer, and is disposed in front of a display such as a liquid crystal display. Since it is excellent in visibility, it is especially suitable as an electrode film for a capacitive touch panel. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view of a transparent conductive laminated film of the present invention. [Explanation of main component symbols] I 〇: Transparent conductive laminated film II: Transparent plastic film (substrate) 1 2 : Hardened layer 1 3 : High refractive index layer 14 : Low refractive index layer 15: Transparent conductive thin film layer 2〇: Dielectric layer -29-