JP2009158974A - ステージ装置及び露光装置、並びにデバイス製造方法 - Google Patents
ステージ装置及び露光装置、並びにデバイス製造方法 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70766—Reaction force control means, e.g. countermass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Abstract
【解決手段】 レチクル干渉計システム69からのX軸方向の測長ビームが照射される反射面が、レチクルステージRSTをY軸方向に駆動するリニアモータ1361,1362よりも外側に設けられているので、そのリニアモータの発熱に起因して該リニアモータ周辺の気体に温度揺らぎが生じても、そのX軸方向の測長ビームにはなんらの影響も生じない。これにより、X軸干渉計69XによるレチクルステージRSTのX軸方向の位置計測を高精度で行うことが可能となり、ひいてはレチクルステージRSTの位置制御性の向上を図ることが可能となる。
【選択図】図3
Description
a. 微動ステージ駆動用のモータの固定子が設けられた固定子キャリアと定盤との間にサイドガイドがあるため、レチクル微動ステージ(レチクル)の非スキャン方向の位置決め時の反力及びヨーイングモーメント、並びに粗動ステージの駆動時に生じるモーメントが、サイドガイドを介して定盤に伝達され、これが定盤の振動要因となり、結果的にレチクルの位置制御精度(位置決め精度を含む)を悪化させていた。
b. レチクル微動ステージ及びレチクル粗動ステージには、電流供給のための配線や、バキュームチャックのための真空排気用の配管及びエアベアリングに対する加圧空気の供給用の配管などが接続されていた。このため、レチクル微動ステージ及びレチクル粗動ステージが移動する際には、上記の配線、配管が引きずられ、それら配線、配管の張力が、結果的にレチクルの位置制御精度(位置決め精度を含む)を悪化させる要因となっていた。
c. レチクル微動ステージ周辺の機械的な振動、熱的要因によるステージ曲げがレチクル微動ステージの位置計測誤差の要因となっていた。一例として、図12(A)に示されるように、レチクル微動ステージRSTに設けられた移動鏡169を介してレチクル微動ステージRST(レチクルR)の位置を測長軸LXを有する干渉計で測定する場合について考える。この場合において、レチクルステージRSTに図12(B)に示されるような変形が生じたものとすると、干渉計によって計測される位置情報にΔMの計測誤差(一種のアッベ誤差)が生じることとなる。なお、図12(A)、図12(B)において、符号CRは、レチクル微動ステージRSTの中立面(曲げ中立面)を示す。
d. さらに、レチクル微動ステージの変形が、移動鏡の変形(曲がり)要因となり、レチクル微動ステージの位置計測精度、ひいては位置制御精度の低下を招いていた。
e. また、特にカウンタマス機構を備えるレチクルステージ装置では、カウンタマス(錘部材)とレチクルステージとの質量比を十分大きく確保することが困難であった。その理由は、上記従来のカウンタマス機構では、カウンタマスはリニアガイドの軸上に重心を配置する必要があるため、カウンタマスの質量を大きくするためには、カウンタマスをリニアガイドの軸方向に延長するか、リニアガイドを中心として軸直交面内で放射方向の距離が一律に大きくなるようにする必要があり、レイアウトの都合上、自ずと制限があるためである。このようにカウンタマス(錘部材)とレチクルステージとの質量比を十分大きく確保することが困難であったことから、カウンタマスのストロークが大きくなり、配管を引きずることの影響や、重心移動による局部的なボディ変形が無視できず、位置制御性の低下の要因となっていた。
f. この他、レチクルステージの周辺部材の配置、形状などが複雑で、その周辺空間は入り組んだ開放空間となっていたため、空調効率が悪く、空気揺らぎ(空気の温度揺らぎ)などによって干渉計計測精度、ひいてはレチクルの位置制御性を悪化させる要因ともなっていた。さらに、F2レーザなどの真空紫外光を露光用照明光として用いる場合には、レチクル周辺においても雰囲気気体を不活性ガスで置換するガスパージを行わなければならないが、上記のレチクルステージの周辺部材の配置、形状などの複雑化のために、その設計が非常に困難なものとなっていた。
《デバイス製造方法》
次に、上述した露光装置をリソグラフィ工程で使用したデバイスの製造方法の実施形態について説明する。
Claims (11)
- 定盤と;
前記定盤の上方に浮上しつつ物体を保持して第1軸及びこれに直交する第2軸を含む2次元面内を前記定盤に沿って移動可能なスライダと;
前記スライダを前記第1軸方向に駆動するリニアモータを含む駆動機構と;
前記スライダに設けられた反射面に測長ビームを照射してその反射光に基づいて前記第1軸方向及び第2軸方向の位置を計測する干渉計システムと;を備え、
前記干渉計システムからの前記第2軸方向の測長ビームが照射される反射面が、前記リニアモータより外側に位置する前記スライダの一部に設けられていることを特徴とするステージ装置。 - 請求項1に記載のステージ装置において、
前記反射面は、前記スライダの前記物体が載置される第1部分とは別の所定長さの棒状の第2部分の端面に形成され、該第2部分にはその長手方向の両端部を除く部分に補強部が設けられ、該補強部の両端が弾性ヒンジ部をそれぞれ介して前記第1部分に連結されていることを特徴とするステージ装置。 - 請求項2に記載のステージ装置において、
前記第1部分には、前記一方の弾性ヒンジ部から前記第1部分と反対側に所定距離だけ離れた位置に、別の弾性ヒンジ部が更に設けられていることを特徴とするステージ装置。 - 請求項1〜3のいずれか一項に記載のステージ装置において、
前記スライダの第1軸方向の一側及び他側の端部には第1軸方向に延びる延設部がそれぞれ設けられ、前記一側の延設部から他側の延設部に至る長手方向の全域に渡る気体静圧軸受が形成され、
前記定盤から配管を介さないで前記気体静圧軸受に対して加圧気体が供給されることを特徴とするステージ装置。 - 物体を保持して移動可能なスライダと;
前記スライダに接続された移動子と、該移動子と協働する固定子とを有し、前記スライダを第1軸方向に沿って駆動する駆動装置と;
前記固定子を保持する保持部と重量部とを有し、前記スライダを駆動した際に発生する反力により駆動されるカウンタマスと;
前記重量部と前記固定子との間に位置するように前記スライダに設けられた反射部材と;
前記反射部材に測長ビームを照射して前記スライダの位置を検出する位置検出装置と;を備えるステージ装置。 - 反射部材が設けられ、物体を保持して移動可能なスライダと;
前記スライダに接続された移動子と、該移動子と協働する固定子とを有し、前記スライダを第1軸方向に沿って駆動する駆動装置と;
透明部を有し、前記固定子を保持して前記スライダを駆動した際に発生する反力により駆動されるカウンタマスと;
前記透明部を介して前記反射部材に測長ビームを照射して前記スライダの位置を検出する位置検出装置と;を備えるステージ装置。 - 請求項5又は6に記載のステージ装置において、
前記スライダは、前記スライダの中立面に前記物体を載置する載置部を有していることを特徴とするステージ装置。 - 請求項5〜7のいずれか一項に記載のステージ装置において、
前記スライダは定盤上に設けられていることを特徴とするステージ装置。 - 請求項8に記載のステージ装置において、
前記カウンタマスは前記定盤上に設けられていることを特徴とするステージ装置。 - マスクと感光物体とを所定方向に同期移動して前記マスクに形成されたパターンを前記感光物体に転写する露光装置であって、
前記マスクを照明光により照明する照明ユニットと;
前記マスクが前記物体として前記スライダ上に載置される請求項1〜9のいずれか一項に記載のステージ装置と;
前記マスクから射出される前記照明光を前記感光物体上に投射する投影光学系ユニットと;を備える露光装置。 - リソグラフィ工程を含むデバイス製造方法であって、
前記リソグラフィ工程で、請求項10に記載の露光装置を用いて露光を行うことを特徴とするデバイス製造方法。
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JP2014007417A (ja) * | 2009-08-07 | 2014-01-16 | Nikon Corp | 露光装置及び露光方法、並びにデバイス製造方法 |
JP2015179295A (ja) * | 2009-08-07 | 2015-10-08 | 株式会社ニコン | 露光装置及びデバイス製造方法 |
JP2015228519A (ja) * | 2009-08-07 | 2015-12-17 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
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