JP2009111375A - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP2009111375A
JP2009111375A JP2008262641A JP2008262641A JP2009111375A JP 2009111375 A JP2009111375 A JP 2009111375A JP 2008262641 A JP2008262641 A JP 2008262641A JP 2008262641 A JP2008262641 A JP 2008262641A JP 2009111375 A JP2009111375 A JP 2009111375A
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film
substrate
insulating film
bond substrate
semiconductor
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JP2008262641A
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Japanese (ja)
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JP2009111375A5 (enExample
Inventor
Hideto Onuma
英人 大沼
Yoichi Iikubo
陽一 飯窪
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008262641A priority Critical patent/JP2009111375A/ja
Publication of JP2009111375A publication Critical patent/JP2009111375A/ja
Publication of JP2009111375A5 publication Critical patent/JP2009111375A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
JP2008262641A 2007-10-10 2008-10-09 半導体装置の作製方法 Withdrawn JP2009111375A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008262641A JP2009111375A (ja) 2007-10-10 2008-10-09 半導体装置の作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007264051 2007-10-10
JP2008262641A JP2009111375A (ja) 2007-10-10 2008-10-09 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2009111375A true JP2009111375A (ja) 2009-05-21
JP2009111375A5 JP2009111375A5 (enExample) 2011-11-04

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Family Applications (1)

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JP2008262641A Withdrawn JP2009111375A (ja) 2007-10-10 2008-10-09 半導体装置の作製方法

Country Status (5)

Country Link
US (1) US8101501B2 (enExample)
JP (1) JP2009111375A (enExample)
KR (1) KR101498576B1 (enExample)
CN (1) CN101409214B (enExample)
TW (1) TWI453803B (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012019125A (ja) * 2010-07-09 2012-01-26 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法、及び半導体装置の作製方法
CN102593285A (zh) * 2012-03-06 2012-07-18 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
JP2016012729A (ja) * 2009-06-26 2016-01-21 株式会社半導体エネルギー研究所 半導体装置
JP2022164678A (ja) * 2017-08-04 2022-10-27 株式会社半導体エネルギー研究所 半導体装置

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WO2008132904A1 (en) * 2007-04-13 2008-11-06 Semiconductor Energy Laboratory Co., Ltd. Photovoltaic device and method for manufacturing the same
SG163481A1 (en) * 2009-01-21 2010-08-30 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
WO2011017179A2 (en) 2009-07-28 2011-02-10 Gigasi Solar, Inc. Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes
EP2282332B1 (en) 2009-08-04 2012-06-27 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate
JP5713603B2 (ja) * 2009-09-02 2015-05-07 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
TWI426565B (zh) * 2009-10-15 2014-02-11 Au Optronics Corp 顯示面板及薄膜電晶體之閘極絕緣層的重工方法
KR101915251B1 (ko) 2009-10-16 2018-11-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20110165721A1 (en) * 2009-11-25 2011-07-07 Venkatraman Prabhakar Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers
TWI451474B (zh) * 2009-12-14 2014-09-01 Tien Hsi Lee 一種製作可轉移性晶體薄膜的方法
KR102198144B1 (ko) * 2009-12-28 2021-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP5839804B2 (ja) * 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
CN103329247B (zh) 2011-01-25 2018-07-31 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
US8975158B2 (en) 2011-04-08 2015-03-10 Ev Group E. Thallner Gmbh Method for permanently bonding wafers
SG192180A1 (en) 2011-04-08 2013-08-30 Ev Group E Thallner Gmbh Method for permanent bonding of wafer
FR2995445B1 (fr) * 2012-09-07 2016-01-08 Soitec Silicon On Insulator Procede de fabrication d'une structure en vue d'une separation ulterieure
JP6393574B2 (ja) 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
CN106449689A (zh) * 2016-11-11 2017-02-22 中国电子科技集团公司第四十四研究所 带聚酰亚胺垫层的帧转移可见光ccd
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
JP7123182B2 (ja) * 2018-06-08 2022-08-22 グローバルウェーハズ カンパニー リミテッド シリコン箔層の移転方法

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WO2007014320A2 (en) * 2005-07-27 2007-02-01 Silicon Genesis Corporation Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process

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JPH03265136A (ja) * 1990-03-15 1991-11-26 Fujitsu Ltd 半導体基板のドライ洗浄方法
JPH1197379A (ja) * 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016012729A (ja) * 2009-06-26 2016-01-21 株式会社半導体エネルギー研究所 半導体装置
JP2012019125A (ja) * 2010-07-09 2012-01-26 Semiconductor Energy Lab Co Ltd 半導体基板の作製方法、及び半導体装置の作製方法
CN102593285A (zh) * 2012-03-06 2012-07-18 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
CN102593285B (zh) * 2012-03-06 2014-07-09 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
JP2022164678A (ja) * 2017-08-04 2022-10-27 株式会社半導体エネルギー研究所 半導体装置
US12243447B2 (en) 2017-08-04 2025-03-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device

Also Published As

Publication number Publication date
TW200931503A (en) 2009-07-16
US20090098709A1 (en) 2009-04-16
CN101409214A (zh) 2009-04-15
US8101501B2 (en) 2012-01-24
CN101409214B (zh) 2012-11-14
KR20090037312A (ko) 2009-04-15
KR101498576B1 (ko) 2015-03-04
TWI453803B (zh) 2014-09-21

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