CN106449689A - 带聚酰亚胺垫层的帧转移可见光ccd - Google Patents
带聚酰亚胺垫层的帧转移可见光ccd Download PDFInfo
- Publication number
- CN106449689A CN106449689A CN201610993256.6A CN201610993256A CN106449689A CN 106449689 A CN106449689 A CN 106449689A CN 201610993256 A CN201610993256 A CN 201610993256A CN 106449689 A CN106449689 A CN 106449689A
- Authority
- CN
- China
- Prior art keywords
- layer
- light ccd
- titanium
- transfer visible
- polyimides
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004642 Polyimide Substances 0.000 title claims abstract description 25
- 229920001721 polyimide Polymers 0.000 title claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 24
- 239000004411 aluminium Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 14
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000010936 titanium Substances 0.000 claims abstract description 12
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000005380 borophosphosilicate glass Substances 0.000 claims abstract description 6
- 229920005591 polysilicon Polymers 0.000 claims abstract description 6
- 238000003475 lamination Methods 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 43
- 238000005516 engineering process Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- MXSJNBRAMXILSE-UHFFFAOYSA-N [Si].[P].[B] Chemical compound [Si].[P].[B] MXSJNBRAMXILSE-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
一种带聚酰亚胺垫层的帧转移可见光CCD，所述帧转移可见光CCD由衬底层、二氧化硅层、氮化硅层、多晶硅层、硼磷硅玻璃层、氮化钛层、钛层、铝层和聚酰亚胺垫层组成；本发明的有益技术效果是：提出了一种带聚酰亚胺垫层的帧转移可见光CCD，通过在铝层和氮化钛层之间加入钛层，有效提高了铝层与下层结构的附着性，避免了起层现象出现。
Description
技术领域
本发明涉及一种帧转移可见光CCD，尤其涉及一种带聚酰亚胺垫层的帧转移可见光CCD。
背景技术
现有技术中，常见的帧转移可见光CCD上，为了防止制作过程中，用于电连接的铝层向底层扩散，一般用氮化钛层来将铝层与底层隔离；随着技术的进步，现有技术中演生出了一种带聚酰亚胺垫层的帧转移可见光CCD，即在帧转移可见光CCD表面设置一聚酰亚胺垫层，聚酰亚胺垫层起缓冲保护作用，以防止帧转移可见光CCD与光耦器件的发光部接触时对帧转移可见光CCD造成损伤，从而使帧转移可见光CCD可以与光耦器件直接接触；带聚酰亚胺垫层的帧转移可见光CCD母片制作好后，需要进行划片处理，以获得多个带聚酰亚胺垫层的帧转移可见光CCD，划片后，发明人发现，在单个帧转移可见光CCD的边沿普遍出现铝层翻起现象，严重时，铝层及其上层结构直接脱落。
发明内容
针对背景技术中的问题，本发明提出了一种带聚酰亚胺垫层的帧转移可见光CCD，其改进在于：所述帧转移可见光CCD由衬底层、二氧化硅层、氮化硅层、多晶硅层、硼磷硅玻璃层、氮化钛层、钛层、铝层和聚酰亚胺垫层组成；所述衬底层、二氧化硅层、氮化硅层、多晶硅层、硼磷硅玻璃层、氮化钛层、钛层、铝层和聚酰亚胺垫层依次层叠在一起形成帧转移可见光CCD。
本发明的原理是：为了解决背景技术中的问题，发明人对残品进行了分析，经分析发现，引起铝层翻起的原因是，铝与聚酰亚胺的附着性要强于铝与氮化钛的附着性，划片处理后，聚酰亚胺边沿会在自身的材料应力作用下出现翘曲变形，铝层就会在聚酰亚胺垫层的带动下向上翻起，从而导致铝层与氮化钛层剥离；在找到了原因后，为了加强铝层与下层结构的附着性，发明人在铝层和氮化钛层之间加入了钛层，经试验验证，在加入了钛层后，铝层和下层结构的附着性得到了明显加强，可以有效抵消聚酰亚胺的材料应力，避免起层现象出现。
本发明的有益技术效果是：提出了一种带聚酰亚胺垫层的帧转移可见光CCD，通过在铝层和氮化钛层之间加入钛层，有效提高了铝层与下层结构的附着性，避免了起层现象出现。
附图说明
图1、本发明的结构示意图；
图2、帧转移可见光CCD芯片顶面示意图；
图中各个标记所对应的名称分别为：衬底层1、二氧化硅层2、氮化硅层3、多晶硅层4、硼磷硅玻璃层5、氮化钛层6、钛层7、铝层8、聚酰亚胺垫层9、帧转移可见光CCD10、划片道11。
具体实施方式
一种带聚酰亚胺垫层的帧转移可见光CCD，其改进在于：所述帧转移可见光CCD由衬底层1、二氧化硅层2、氮化硅层3、多晶硅层4、硼磷硅玻璃层5、氮化钛层6、钛层7、铝层8和聚酰亚胺垫层9组成；所述衬底层1、二氧化硅层2、氮化硅层3、多晶硅层4、硼磷硅玻璃层5、氮化钛层6、钛层7、铝层8和聚酰亚胺垫层9依次层叠在一起形成帧转移可见光CCD。
Claims (1)
1.一种带聚酰亚胺垫层的帧转移可见光CCD，其特征在于：所述帧转移可见光CCD由衬底层（1）、二氧化硅层（2）、氮化硅层（3）、多晶硅层（4）、硼磷硅玻璃层（5）、氮化钛层（6）、钛层（7）、铝层（8）和聚酰亚胺垫层（9）组成；所述衬底层（1）、二氧化硅层（2）、氮化硅层（3）、多晶硅层（4）、硼磷硅玻璃层（5）、氮化钛层（6）、钛层（7）、铝层（8）和聚酰亚胺垫层（9）依次层叠在一起形成帧转移可见光CCD。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993256.6A CN106449689A (zh) | 2016-11-11 | 2016-11-11 | 带聚酰亚胺垫层的帧转移可见光ccd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610993256.6A CN106449689A (zh) | 2016-11-11 | 2016-11-11 | 带聚酰亚胺垫层的帧转移可见光ccd |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106449689A true CN106449689A (zh) | 2017-02-22 |
Family
ID=58207400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610993256.6A Pending CN106449689A (zh) | 2016-11-11 | 2016-11-11 | 带聚酰亚胺垫层的帧转移可见光ccd |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106449689A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981496A (zh) * | 2017-04-05 | 2017-07-25 | 中国电子科技集团公司第四十四研究所 | 用于帧转移可见光ccd的输出放大器及制作方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0552969A1 (en) * | 1992-01-22 | 1993-07-28 | Sharp Kabushiki Kaisha | A clear-mould solid-state imaging device using a charge coupled device |
| US5350490A (en) * | 1992-02-21 | 1994-09-27 | Samsung Electronics Ltd. | Forming a color filter on a semiconductor substrate |
| US5483090A (en) * | 1993-04-09 | 1996-01-09 | Sanyo Electric Co., Ltd. | Solid-state image pickup device and method for manufacturing such device |
| US20020058350A1 (en) * | 2000-11-13 | 2002-05-16 | Samsung Electronics Co., Ltd. | Solid state image sensor and method of manufacturing the same |
| CN101409214A (zh) * | 2007-10-10 | 2009-04-15 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| CN102005464A (zh) * | 2009-09-01 | 2011-04-06 | 台湾积体电路制造股份有限公司 | 像素区域上具有电容器的背照式图像传感器 |
-
2016
- 2016-11-11 CN CN201610993256.6A patent/CN106449689A/zh active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0552969A1 (en) * | 1992-01-22 | 1993-07-28 | Sharp Kabushiki Kaisha | A clear-mould solid-state imaging device using a charge coupled device |
| US5350490A (en) * | 1992-02-21 | 1994-09-27 | Samsung Electronics Ltd. | Forming a color filter on a semiconductor substrate |
| US5483090A (en) * | 1993-04-09 | 1996-01-09 | Sanyo Electric Co., Ltd. | Solid-state image pickup device and method for manufacturing such device |
| US20020058350A1 (en) * | 2000-11-13 | 2002-05-16 | Samsung Electronics Co., Ltd. | Solid state image sensor and method of manufacturing the same |
| CN101409214A (zh) * | 2007-10-10 | 2009-04-15 | 株式会社半导体能源研究所 | 制造半导体器件的方法 |
| CN102005464A (zh) * | 2009-09-01 | 2011-04-06 | 台湾积体电路制造股份有限公司 | 像素区域上具有电容器的背照式图像传感器 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981496A (zh) * | 2017-04-05 | 2017-07-25 | 中国电子科技集团公司第四十四研究所 | 用于帧转移可见光ccd的输出放大器及制作方法 |
| CN106981496B (zh) * | 2017-04-05 | 2019-08-27 | 中国电子科技集团公司第四十四研究所 | 用于帧转移可见光ccd的输出放大器及制作方法 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11456400B2 (en) | Light-emitting diode and method for transferring the same | |
| CN110838502B (zh) | 发光二极管芯片及制作和转移方法、显示装置及制作方法 | |
| CN102629604B (zh) | 一种bt基板的悬梁式ic芯片堆叠封装件及其生产方法 | |
| WO2004034433A3 (en) | Semiconductor stacked multi-package module having inverted second package | |
| SG81964A1 (en) | Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof | |
| WO2009050785A1 (ja) | 粘着剤、粘着シート、多層粘着シート及び電子部品の製造方法 | |
| SG154396A1 (en) | Strain-direct-on-insulator (sdoi) substrate and method of forming | |
| JP2008523631A5 (zh) | ||
| WO2004027823A3 (en) | Semiconductor multi-package module having wire bond interconnection between stacked packages | |
| WO2011119308A3 (en) | Method of forming a multi-chip stacked structure including a thin interposer chip having a face-to-back bonding with another chip | |
| WO2013082970A1 (zh) | 密节距小焊盘铜线键合双ic芯片堆叠封装件及其制备方法 | |
| WO2008090771A1 (ja) | 半導体装置及びその製造方法 | |
| CN1721860A (zh) | 电容性动态量传感器和半导体器件 | |
| CN102522383A (zh) | 一种中心布线双圈排列ic芯片堆叠封装件及其生产方法 | |
| CN106449689A (zh) | 带聚酰亚胺垫层的帧转移可见光ccd | |
| EP1396883A3 (en) | Substrate and manufacturing method therefor | |
| SG187057A1 (en) | Grinding tool for trapezoid grinding of a wafer | |
| CN102097338A (zh) | 封装晶片上的电子元件的方法 | |
| US7198988B1 (en) | Method for eliminating backside metal peeling during die separation | |
| WO2009088659A3 (en) | Micropad formation for a semiconductor | |
| JP2011216648A (ja) | 半導体装置及びその製造方法 | |
| TWI377629B (en) | Package method for flip chip | |
| US20120028439A1 (en) | Semiconductor And Solar Wafers And Method For Processing Same | |
| CN210575949U (zh) | 一种大芯片的垂直堆叠结构 | |
| TW200633135A (en) | Method of producing semiconductor chips from a wafer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170222 |