WO2008090771A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2008090771A1
WO2008090771A1 PCT/JP2008/050253 JP2008050253W WO2008090771A1 WO 2008090771 A1 WO2008090771 A1 WO 2008090771A1 JP 2008050253 W JP2008050253 W JP 2008050253W WO 2008090771 A1 WO2008090771 A1 WO 2008090771A1
Authority
WO
WIPO (PCT)
Prior art keywords
impurity region
semiconductor device
production method
type semiconductor
semiconductor regions
Prior art date
Application number
PCT/JP2008/050253
Other languages
English (en)
French (fr)
Inventor
Yuichiro Sasaki
Katsumi Okashita
Keiichi Nakamoto
Hiroyuki Ito
Bunji Mizuno
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
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Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008555016A priority Critical patent/JP4866918B2/ja
Priority to CN2008800023839A priority patent/CN101601138B/zh
Priority to US12/025,504 priority patent/US7800165B2/en
Priority to US12/168,686 priority patent/US20080308871A1/en
Publication of WO2008090771A1 publication Critical patent/WO2008090771A1/ja
Priority to US12/853,840 priority patent/US8105926B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

　支持基板１１上に上面及び側面を有するフィン型半導体領域１３ａ～１３ｄが形成されている。フィン型半導体領域１３ａ～１３ｄのそれぞれの上部には第１の不純物領域１７ａが形成されている。フィン型半導体領域１３ａ～１３ｄのそれぞれの側部には第２の不純物領域１７ｂが形成されている。第２の不純物領域１７ｂの比抵抗は第１の不純物領域１７ａの比抵抗と比べて同等以下である。
PCT/JP2008/050253 2007-01-22 2008-01-11 半導体装置及びその製造方法 WO2008090771A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008555016A JP4866918B2 (ja) 2007-01-22 2008-01-11 半導体装置
CN2008800023839A CN101601138B (zh) 2007-01-22 2008-01-11 半导体装置及其制造方法
US12/025,504 US7800165B2 (en) 2007-01-22 2008-02-04 Semiconductor device and method for producing the same
US12/168,686 US20080308871A1 (en) 2007-01-22 2008-07-07 Semiconductor device and method for producing the same
US12/853,840 US8105926B2 (en) 2007-01-22 2010-08-10 Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity region

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007011572 2007-01-22
JP2007-011572 2007-04-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/025,504 Continuation US7800165B2 (en) 2007-01-22 2008-02-04 Semiconductor device and method for producing the same

Publications (1)

Publication Number Publication Date
WO2008090771A1 true WO2008090771A1 (ja) 2008-07-31

Family

ID=39644346

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050253 WO2008090771A1 (ja) 2007-01-22 2008-01-11 半導体装置及びその製造方法

Country Status (5)

Country Link
US (3) US7800165B2 (ja)
JP (2) JP4866918B2 (ja)
CN (1) CN101601138B (ja)
TW (1) TW200832567A (ja)
WO (1) WO2008090771A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009066409A1 (ja) * 2007-11-22 2009-05-28 Panasonic Corporation 半導体装置の製造方法
JP4598886B1 (ja) * 2009-07-27 2010-12-15 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
WO2011013271A1 (ja) * 2009-07-27 2011-02-03 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
US8574972B2 (en) 2009-12-28 2013-11-05 Panasonic Corporation Method for fabricating semiconductor device and plasma doping apparatus

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KR20070115907A (ko) * 2005-03-31 2007-12-06 마쯔시다덴기산교 가부시키가이샤 플라즈마 도핑 방법 및 장치
WO2008090771A1 (ja) * 2007-01-22 2008-07-31 Panasonic Corporation 半導体装置及びその製造方法
US8063437B2 (en) * 2007-07-27 2011-11-22 Panasonic Corporation Semiconductor device and method for producing the same
US8004045B2 (en) 2007-07-27 2011-08-23 Panasonic Corporation Semiconductor device and method for producing the same
JP2012517689A (ja) * 2009-02-12 2012-08-02 パナソニック株式会社 半導体装置及びその製造方法
CN103515205B (zh) * 2012-06-28 2016-03-23 中芯国际集成电路制造(上海)有限公司 一种FinFET沟道掺杂方法
US9240352B2 (en) 2012-10-24 2016-01-19 Globalfoundries Inc. Bulk finFET well contacts with fin pattern uniformity
US9299564B2 (en) * 2012-12-12 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Ion implant for defect control
KR102175854B1 (ko) * 2013-11-14 2020-11-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
WO2016109958A1 (zh) * 2015-01-08 2016-07-14 上海凯世通半导体有限公司 FinFET的掺杂方法
KR102427596B1 (ko) 2015-09-03 2022-07-29 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US11171057B2 (en) * 2016-12-30 2021-11-09 Intel Corporation Semiconductor fin design to mitigate fin collapse

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JPH1079517A (ja) * 1996-07-11 1998-03-24 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009066409A1 (ja) * 2007-11-22 2009-05-28 Panasonic Corporation 半導体装置の製造方法
US8012862B2 (en) 2007-11-22 2011-09-06 Panasonic Corporation Method for manufacturing semiconductor device using plasma doping
JP5179511B2 (ja) * 2007-11-22 2013-04-10 パナソニック株式会社 半導体装置の製造方法
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
JP4794692B2 (ja) * 2009-06-24 2011-10-19 パナソニック株式会社 半導体装置の製造方法
US8124507B2 (en) 2009-06-24 2012-02-28 Panasonic Corporation Semiconductor device and method for fabricating the same
JP4598886B1 (ja) * 2009-07-27 2010-12-15 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
WO2011013271A1 (ja) * 2009-07-27 2011-02-03 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
US8193080B2 (en) 2009-07-27 2012-06-05 Panasonic Corporation Method for fabricating semiconductor device and plasma doping system
US8574972B2 (en) 2009-12-28 2013-11-05 Panasonic Corporation Method for fabricating semiconductor device and plasma doping apparatus

Also Published As

Publication number Publication date
US7800165B2 (en) 2010-09-21
US8105926B2 (en) 2012-01-31
US20080179683A1 (en) 2008-07-31
JP5280479B2 (ja) 2013-09-04
CN101601138A (zh) 2009-12-09
TWI353026B (ja) 2011-11-21
TW200832567A (en) 2008-08-01
US20080308871A1 (en) 2008-12-18
JP2011181945A (ja) 2011-09-15
CN101601138B (zh) 2012-07-25
US20100330782A1 (en) 2010-12-30
JP4866918B2 (ja) 2012-02-01
JPWO2008090771A1 (ja) 2010-05-20

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