WO2009016778A1 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
WO2009016778A1
WO2009016778A1 PCT/JP2008/000303 JP2008000303W WO2009016778A1 WO 2009016778 A1 WO2009016778 A1 WO 2009016778A1 JP 2008000303 W JP2008000303 W JP 2008000303W WO 2009016778 A1 WO2009016778 A1 WO 2009016778A1
Authority
WO
WIPO (PCT)
Prior art keywords
fin
insulating film
gate insulating
manufacturing
same
Prior art date
Application number
PCT/JP2008/000303
Other languages
English (en)
French (fr)
Inventor
Yuichiro Sasaki
Katsumi Okashita
Keiichi Nakamoto
Hisataka Kanada
Bunji Mizuno
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to JP2008551379A priority Critical patent/JP4814960B2/ja
Priority to EP08710456.8A priority patent/EP2175492A4/en
Priority to CN2008800005987A priority patent/CN101542743B/zh
Priority to US12/193,861 priority patent/US8063437B2/en
Publication of WO2009016778A1 publication Critical patent/WO2009016778A1/ja
Priority to US12/512,617 priority patent/US8004045B2/en
Priority to US13/185,221 priority patent/US8536000B2/en
Priority to US13/245,497 priority patent/US20120015504A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
    • H01L29/7854—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection with rounded corners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/66803—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with a step of doping the vertical sidewall, e.g. using tilted or multi-angled implants

Abstract

　上部に不純物領域６１ａ及び側部に不純物領域６１ｂを有するフィン型半導体領域６１を跨ぐようにゲート絶縁膜６２が形成されている。ゲート絶縁膜６２の外側に位置する部分のフィン型半導体領域６１における上部コーナーの曲率半径ｒ’は、ゲート絶縁膜６２の下側に位置する部分のフィン型半導体領域６１における上部コーナーの曲率半径ｒよりも大きく且つ２ｒ以下である。
PCT/JP2008/000303 2007-07-27 2008-02-22 半導体装置及びその製造方法 WO2009016778A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2008551379A JP4814960B2 (ja) 2007-07-27 2008-02-22 半導体装置の製造方法
EP08710456.8A EP2175492A4 (en) 2007-07-27 2008-02-22 Semiconductor device and method for manufacturing the same
CN2008800005987A CN101542743B (zh) 2007-07-27 2008-02-22 半导体装置的制造方法
US12/193,861 US8063437B2 (en) 2007-07-27 2008-08-19 Semiconductor device and method for producing the same
US12/512,617 US8004045B2 (en) 2007-07-27 2009-07-30 Semiconductor device and method for producing the same
US13/185,221 US8536000B2 (en) 2007-07-27 2011-07-18 Method for producing a semiconductor device have fin-shaped semiconductor regions
US13/245,497 US20120015504A1 (en) 2007-07-27 2011-09-26 Semiconductor device and method for producing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-195860 2007-07-27
JP2007195860 2007-07-27

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/193,861 Continuation US8063437B2 (en) 2007-07-27 2008-08-19 Semiconductor device and method for producing the same

Publications (1)

Publication Number Publication Date
WO2009016778A1 true WO2009016778A1 (ja) 2009-02-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000303 WO2009016778A1 (ja) 2007-07-27 2008-02-22 半導体装置及びその製造方法

Country Status (6)

Country Link
EP (1) EP2175492A4 (ja)
JP (2) JP4814960B2 (ja)
KR (1) KR20100048954A (ja)
CN (2) CN101542743B (ja)
TW (1) TWI493707B (ja)
WO (1) WO2009016778A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
JP2011129678A (ja) * 2009-12-17 2011-06-30 Panasonic Corp 半導体装置及びその製造方法
WO2011080857A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
JP2012517693A (ja) * 2009-02-10 2012-08-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体デバイスの形成方法及びエッチング・マスク
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
KR20140059772A (ko) * 2011-03-25 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
JP2016086178A (ja) * 2009-07-17 2016-05-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
CN109506121A (zh) * 2018-12-27 2019-03-22 东风汽车集团股份有限公司乘用车公司 过拉延结构、冲压产品及冲压模具

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KR101894221B1 (ko) 2012-03-21 2018-10-04 삼성전자주식회사 전계 효과 트랜지스터 및 이를 포함하는 반도체 장치
CN103325833B (zh) * 2012-03-21 2018-08-07 三星电子株式会社 场效应晶体管以及包括其的半导体器件和集成电路器件
US9093335B2 (en) 2012-11-29 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Calculating carrier concentrations in semiconductor Fins using probed resistance
KR102175854B1 (ko) * 2013-11-14 2020-11-09 삼성전자주식회사 반도체 소자 및 이를 제조하는 방법
TWI567795B (zh) * 2015-01-08 2017-01-21 上海凱世通半導體有限公司 鰭式場效電晶體的摻雜方法
CN105826381B (zh) * 2015-01-09 2018-11-16 中芯国际集成电路制造(上海)有限公司 鳍式场效应晶体管及其形成方法
KR102400375B1 (ko) * 2015-04-30 2022-05-20 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR20200066157A (ko) * 2018-11-29 2020-06-09 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 반도체 구조체 및 그 제조 방법
US11271094B2 (en) 2018-11-29 2022-03-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and method of manufacturing the same

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012517693A (ja) * 2009-02-10 2012-08-02 インターナショナル・ビジネス・マシーンズ・コーポレーション 半導体デバイスの形成方法及びエッチング・マスク
US8324685B2 (en) 2009-02-12 2012-12-04 Panasonic Corporation Semiconductor device having a fin-type semiconductor region
JP4794692B2 (ja) * 2009-06-24 2011-10-19 パナソニック株式会社 半導体装置の製造方法
WO2010150442A1 (ja) * 2009-06-24 2010-12-29 パナソニック株式会社 半導体装置及びその製造方法
US8124507B2 (en) 2009-06-24 2012-02-28 Panasonic Corporation Semiconductor device and method for fabricating the same
JP2016086178A (ja) * 2009-07-17 2016-05-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP2011129678A (ja) * 2009-12-17 2011-06-30 Panasonic Corp 半導体装置及びその製造方法
WO2011080857A1 (ja) * 2009-12-28 2011-07-07 パナソニック株式会社 半導体装置の製造方法及びプラズマドーピング装置
US8574972B2 (en) 2009-12-28 2013-11-05 Panasonic Corporation Method for fabricating semiconductor device and plasma doping apparatus
KR20140059772A (ko) * 2011-03-25 2014-05-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
KR101645682B1 (ko) * 2011-03-25 2016-08-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전계 효과 트랜지스터 및 그것을 이용한 메모리 및 반도체 회로
CN109506121A (zh) * 2018-12-27 2019-03-22 东风汽车集团股份有限公司乘用车公司 过拉延结构、冲压产品及冲压模具
CN109506121B (zh) * 2018-12-27 2024-01-23 东风汽车集团股份有限公司 过拉延结构、冲压产品及冲压模具

Also Published As

Publication number Publication date
KR20100048954A (ko) 2010-05-11
JP4814960B2 (ja) 2011-11-16
TWI493707B (zh) 2015-07-21
JP5449247B2 (ja) 2014-03-19
CN102723366B (zh) 2015-03-04
EP2175492A4 (en) 2017-08-23
EP2175492A1 (en) 2010-04-14
CN101542743B (zh) 2012-09-05
CN102723366A (zh) 2012-10-10
TW200905882A (en) 2009-02-01
JP2011166164A (ja) 2011-08-25
JPWO2009016778A1 (ja) 2010-10-14
CN101542743A (zh) 2009-09-23

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