CN101409214B - 制造半导体器件的方法 - Google Patents

制造半导体器件的方法 Download PDF

Info

Publication number
CN101409214B
CN101409214B CN2008101665153A CN200810166515A CN101409214B CN 101409214 B CN101409214 B CN 101409214B CN 2008101665153 A CN2008101665153 A CN 2008101665153A CN 200810166515 A CN200810166515 A CN 200810166515A CN 101409214 B CN101409214 B CN 101409214B
Authority
CN
China
Prior art keywords
film
substrate
semiconductor
insulating film
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008101665153A
Other languages
English (en)
Chinese (zh)
Other versions
CN101409214A (zh
Inventor
大沼英人
饭漥阳一
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN101409214A publication Critical patent/CN101409214A/zh
Application granted granted Critical
Publication of CN101409214B publication Critical patent/CN101409214B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Liquid Crystal (AREA)
CN2008101665153A 2007-10-10 2008-10-09 制造半导体器件的方法 Expired - Fee Related CN101409214B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007264051 2007-10-10
JP2007-264051 2007-10-10
JP2007264051 2007-10-10

Publications (2)

Publication Number Publication Date
CN101409214A CN101409214A (zh) 2009-04-15
CN101409214B true CN101409214B (zh) 2012-11-14

Family

ID=40534650

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101665153A Expired - Fee Related CN101409214B (zh) 2007-10-10 2008-10-09 制造半导体器件的方法

Country Status (5)

Country Link
US (1) US8101501B2 (enExample)
JP (1) JP2009111375A (enExample)
KR (1) KR101498576B1 (enExample)
CN (1) CN101409214B (enExample)
TW (1) TWI453803B (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2143146A1 (en) * 2007-04-13 2010-01-13 Semiconductor Energy Laboratory Co, Ltd. Photovoltaic device and method for manufacturing the same
SG178765A1 (en) * 2009-01-21 2012-03-29 Semiconductor Energy Lab Method for manufacturing soi substrate and semiconductor device
JP2011029610A (ja) * 2009-06-26 2011-02-10 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
US8361890B2 (en) 2009-07-28 2013-01-29 Gigasi Solar, Inc. Systems, methods and materials including crystallization of substrates via sub-melt laser anneal, as well as products produced by such processes
EP2282332B1 (en) * 2009-08-04 2012-06-27 S.O.I. TEC Silicon Method for fabricating a semiconductor substrate
JP5713603B2 (ja) * 2009-09-02 2015-05-07 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
TWI426565B (zh) * 2009-10-15 2014-02-11 友達光電股份有限公司 顯示面板及薄膜電晶體之閘極絕緣層的重工方法
KR101772639B1 (ko) * 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011066485A2 (en) * 2009-11-25 2011-06-03 Gigasi Solar, Inc. Systems, methods and products including features of laser irradiation and/or cleaving of silicon with other substrates or layers
TWI451474B (zh) * 2009-12-14 2014-09-01 李天錫 一種製作可轉移性晶體薄膜的方法
KR102878874B1 (ko) * 2009-12-28 2025-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치와 반도체 장치
JP5618656B2 (ja) * 2010-07-09 2014-11-05 株式会社半導体エネルギー研究所 半導体基板の作製方法
US8735263B2 (en) 2011-01-21 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
WO2012100786A1 (de) 2011-01-25 2012-08-02 Ev Group E. Thallner Gmbh Verfahren zum permanenten bonden von wafern
JP5839804B2 (ja) * 2011-01-25 2016-01-06 国立大学法人東北大学 半導体装置の製造方法、および半導体装置
SG193903A1 (en) 2011-04-08 2013-11-29 Ev Group E Thallner Gmbh Method for permanent bonding of wafers
WO2012136267A1 (de) 2011-04-08 2012-10-11 Ev Group E. Thallner Gmbh Verfahren zum permanenten bonden von wafern
CN102593285B (zh) * 2012-03-06 2014-07-09 华灿光电股份有限公司 一种回收图形化蓝宝石衬底的方法
FR2995445B1 (fr) * 2012-09-07 2016-01-08 Soitec Silicon On Insulator Procede de fabrication d'une structure en vue d'une separation ulterieure
JP6393574B2 (ja) * 2014-10-09 2018-09-19 東京エレクトロン株式会社 エッチング方法
US9870940B2 (en) 2015-08-03 2018-01-16 Samsung Electronics Co., Ltd. Methods of forming nanosheets on lattice mismatched substrates
JP6737066B2 (ja) * 2016-08-22 2020-08-05 株式会社Sumco エピタキシャルシリコンウェーハの製造方法、エピタキシャルシリコンウェーハ、及び固体撮像素子の製造方法
CN106449689A (zh) * 2016-11-11 2017-02-22 中国电子科技集团公司第四十四研究所 带聚酰亚胺垫层的帧转移可见光ccd
JP6810578B2 (ja) * 2016-11-18 2021-01-06 株式会社Ｓｃｒｅｅｎホールディングス ドーパント導入方法および熱処理方法
JP7118973B2 (ja) * 2017-08-04 2022-08-16 株式会社半導体エネルギー研究所 半導体装置
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
CN112262467B (zh) * 2018-06-08 2024-08-09 环球晶圆股份有限公司 将硅薄层移转的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
WO2005124865A1 (ja) * 2004-06-17 2005-12-29 Shin-Etsu Handotai Co., Ltd. 貼り合わせウェーハの製造方法
CN1716577A (zh) * 2004-06-24 2006-01-04 硅电子股份公司 半导体衬底及其制造工艺

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874259B2 (ja) * 1990-03-15 1999-03-24 富士通株式会社 半導体基板のドライ洗浄方法
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
DE69334324D1 (de) * 1992-01-30 2010-05-06 Canon Kk Herstellungsverfahren für Halbleitersubstrat
JPH07263721A (ja) * 1994-03-25 1995-10-13 Nippondenso Co Ltd 半導体装置及びその製造方法
JP4103968B2 (ja) 1996-09-18 2008-06-18 株式会社半導体エネルギー研究所 絶縁ゲイト型半導体装置
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
JPH1197379A (ja) * 1997-07-25 1999-04-09 Denso Corp 半導体基板及び半導体基板の製造方法
US6388652B1 (en) 1997-08-20 2002-05-14 Semiconductor Energy Laboratory Co., Ltd. Electrooptical device
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11163363A (ja) 1997-11-22 1999-06-18 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JPH11233449A (ja) * 1998-02-13 1999-08-27 Denso Corp 半導体基板の製造方法
JP2000012864A (ja) 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2920188B1 (ja) * 1998-06-26 1999-07-19 日新電機株式会社 パルスバイアス水素負イオン注入方法及び注入装置
US6271101B1 (en) 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000077287A (ja) * 1998-08-26 2000-03-14 Nissin Electric Co Ltd 結晶薄膜基板の製造方法
JP4476390B2 (ja) * 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000124092A (ja) 1998-10-16 2000-04-28 Shin Etsu Handotai Co Ltd 水素イオン注入剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
US6255195B1 (en) * 1999-02-22 2001-07-03 Intersil Corporation Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said method
EP1039513A3 (en) 1999-03-26 2008-11-26 Canon Kabushiki Kaisha Method of producing a SOI wafer
JP3900741B2 (ja) * 1999-05-21 2007-04-04 信越半導体株式会社 Ｓｏｉウェーハの製造方法
US6653209B1 (en) * 1999-09-30 2003-11-25 Canon Kabushiki Kaisha Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device
JP2001168308A (ja) 1999-09-30 2001-06-22 Canon Inc シリコン薄膜の製造方法、ｓｏｉ基板の作製方法及び半導体装置
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
KR100796249B1 (ko) * 1999-12-24 2008-01-21 신에쯔 한도타이 가부시키가이샤 접합 웨이퍼의 제조방법
JP2001196566A (ja) * 2000-01-07 2001-07-19 Sony Corp 半導体基板およびその製造方法
JP4450126B2 (ja) * 2000-01-21 2010-04-14 日新電機株式会社 シリコン系結晶薄膜の形成方法
WO2001093334A1 (en) * 2000-05-30 2001-12-06 Shin-Etsu Handotai Co.,Ltd. Method for producing bonded wafer and bonded wafer
KR100874724B1 (ko) * 2001-07-17 2008-12-19 신에쯔 한도타이 가부시키가이샤 접합 웨이퍼의 제조방법
JP4772258B2 (ja) 2002-08-23 2011-09-14 シャープ株式会社 Ｓｏｉ基板の製造方法
US7119365B2 (en) 2002-03-26 2006-10-10 Sharp Kabushiki Kaisha Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate
JP2004063730A (ja) * 2002-07-29 2004-02-26 Shin Etsu Handotai Co Ltd Ｓｏｉウェーハの製造方法
US6995427B2 (en) * 2003-01-29 2006-02-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same
US7608548B2 (en) * 2003-09-10 2009-10-27 Shin-Etsu Handotai Co., Ltd. Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer
US7071122B2 (en) * 2003-12-10 2006-07-04 International Business Machines Corporation Field effect transistor with etched-back gate dielectric
JP4828230B2 (ja) * 2004-01-30 2011-11-30 株式会社Ｓｕｍｃｏ Ｓｏｉウェーハの製造方法
JP4626175B2 (ja) * 2004-04-09 2011-02-02 株式会社Sumco Ｓｏｉ基板の製造方法
US6893936B1 (en) * 2004-06-29 2005-05-17 International Business Machines Corporation Method of Forming strained SI/SIGE on insulator with silicon germanium buffer
US7279400B2 (en) * 2004-08-05 2007-10-09 Sharp Laboratories Of America, Inc. Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass
US7276430B2 (en) * 2004-12-14 2007-10-02 Electronics And Telecommunications Research Institute Manufacturing method of silicon on insulator wafer
JP2006303089A (ja) * 2005-04-19 2006-11-02 Sumco Corp シリコン基板の洗浄方法
WO2007014320A2 (en) * 2005-07-27 2007-02-01 Silicon Genesis Corporation Method and structure for fabricating multiple tile regions onto a plate using a controlled cleaving process
FR2896619B1 (fr) * 2006-01-23 2008-05-23 Soitec Silicon On Insulator Procede de fabrication d'un substrat composite a proprietes electriques ameliorees
FR2911430B1 (fr) * 2007-01-15 2009-04-17 Soitec Silicon On Insulator "procede de fabrication d'un substrat hybride"
KR101443580B1 (ko) * 2007-05-11 2014-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Soi구조를 갖는 기판

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6534380B1 (en) * 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
WO2005124865A1 (ja) * 2004-06-17 2005-12-29 Shin-Etsu Handotai Co., Ltd. 貼り合わせウェーハの製造方法
CN1716577A (zh) * 2004-06-24 2006-01-04 硅电子股份公司 半导体衬底及其制造工艺

Also Published As

Publication number Publication date
US20090098709A1 (en) 2009-04-16
TWI453803B (zh) 2014-09-21
TW200931503A (en) 2009-07-16
JP2009111375A (ja) 2009-05-21
CN101409214A (zh) 2009-04-15
KR101498576B1 (ko) 2015-03-04
US8101501B2 (en) 2012-01-24
KR20090037312A (ko) 2009-04-15

Similar Documents

Publication Publication Date Title
US8101501B2 (en) Method of manufacturing semiconductor device
JP5250228B2 (ja) 半導体装置の作製方法
US8432021B2 (en) Manufacturing method of SOI substrate
CN101937861B (zh) 半导体衬底的制造方法、以及半导体装置的制造方法
US7851332B2 (en) Semiconductor device and method for manufacturing the same
KR101447936B1 (ko) 반도체 장치 및 그 제작 방법
US8318587B2 (en) Method for manufacturing semiconductor device
US8415228B2 (en) Manufacturing method of SOI substrate and semiconductor device
US20100022070A1 (en) Method for manufacturing soi substrate
US8268701B2 (en) Manufacturing of semiconductor device
US7816234B2 (en) Method for manufacturing semiconductor device
TW200915496A (en) Semiconductor substrate and method for manufacturing the same
US20080265323A1 (en) Semiconductor Device and Manufacturing Method Thereof
US8324084B2 (en) Manufacturing method of semiconductor substrate and manufacturing method of semiconductor device
HK1125740A (en) Semiconductor device and method for manufacturing the same

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20121114

Termination date: 20201009