JP2009081163A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2009081163A
JP2009081163A JP2007247219A JP2007247219A JP2009081163A JP 2009081163 A JP2009081163 A JP 2009081163A JP 2007247219 A JP2007247219 A JP 2007247219A JP 2007247219 A JP2007247219 A JP 2007247219A JP 2009081163 A JP2009081163 A JP 2009081163A
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JP
Japan
Prior art keywords
columnar body
layer
oxide film
gate electrode
impurity diffusion
Prior art date
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Abandoned
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JP2007247219A
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English (en)
Japanese (ja)
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JP2009081163A5 (https=
Inventor
Hiroyuki Fujimoto
紘行 藤本
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Micron Memory Japan Ltd
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Elpida Memory Inc
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Publication date
Application filed by Elpida Memory Inc filed Critical Elpida Memory Inc
Priority to JP2007247219A priority Critical patent/JP2009081163A/ja
Priority to US12/235,663 priority patent/US7791133B2/en
Publication of JP2009081163A publication Critical patent/JP2009081163A/ja
Publication of JP2009081163A5 publication Critical patent/JP2009081163A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/025—Manufacture or treatment of FETs having insulated gates [IGFET] of vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
JP2007247219A 2007-09-25 2007-09-25 半導体装置およびその製造方法 Abandoned JP2009081163A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007247219A JP2009081163A (ja) 2007-09-25 2007-09-25 半導体装置およびその製造方法
US12/235,663 US7791133B2 (en) 2007-09-25 2008-09-23 Semiconductor device with reduced gate-overlap capacitance and method of forming the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007247219A JP2009081163A (ja) 2007-09-25 2007-09-25 半導体装置およびその製造方法

Publications (2)

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JP2009081163A true JP2009081163A (ja) 2009-04-16
JP2009081163A5 JP2009081163A5 (https=) 2010-09-30

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ID=40470711

Family Applications (1)

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JP2007247219A Abandoned JP2009081163A (ja) 2007-09-25 2007-09-25 半導体装置およびその製造方法

Country Status (2)

Country Link
US (1) US7791133B2 (https=)
JP (1) JP2009081163A (https=)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251678A (ja) * 2009-04-20 2010-11-04 Unisantis Electronics Japan Ltd 半導体装置の製造方法
JP2011040682A (ja) * 2009-08-18 2011-02-24 Unisantis Electronics Japan Ltd 半導体装置とその製造方法
JP2011040421A (ja) * 2009-08-06 2011-02-24 Elpida Memory Inc 半導体装置およびその製造方法
JP2011100826A (ja) * 2009-11-05 2011-05-19 Elpida Memory Inc 半導体装置の製造方法および半導体装置
JP2012182423A (ja) * 2011-02-28 2012-09-20 Sk Hynix Inc 半導体メモリ素子及びその製造方法
US8697511B2 (en) 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US8829601B2 (en) 2012-05-17 2014-09-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8877578B2 (en) 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
JP5692886B1 (ja) * 2013-04-19 2015-04-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
US9012981B2 (en) 2012-05-17 2015-04-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9166043B2 (en) 2012-05-17 2015-10-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
JP2020202296A (ja) * 2019-06-10 2020-12-17 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法
JP2020202295A (ja) * 2019-06-10 2020-12-17 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100946084B1 (ko) * 2008-03-27 2010-03-10 주식회사 하이닉스반도체 반도체 소자의 수직형 트랜지스터 및 그 형성방법
JP4487221B1 (ja) 2009-04-17 2010-06-23 日本ユニサンティスエレクトロニクス株式会社 半導体装置
WO2014174672A1 (ja) * 2013-04-26 2014-10-30 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置の製造方法及び半導体装置
US20150097228A1 (en) * 2013-10-07 2015-04-09 Nanya Technology Corporation Method for manufacturing semiconductor device
US9318447B2 (en) 2014-07-18 2016-04-19 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and method of forming vertical structure
CN109494151B (zh) * 2017-09-12 2021-03-30 联华电子股份有限公司 垂直金属氧化物半导体晶体管及其制作方法
US11107906B2 (en) 2019-10-10 2021-08-31 Samsung Electronics Co., Ltd. Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same
CN113284797B (zh) 2020-02-20 2022-10-18 长鑫存储技术有限公司 半导体存储器的制作方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02252264A (ja) * 1989-03-27 1990-10-11 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
JPH056977A (ja) * 1990-11-30 1993-01-14 Toshiba Corp ダイナミツク型半導体記憶装置およびその製造方法
JPH07254700A (ja) * 1994-03-15 1995-10-03 Mitsubishi Electric Corp Ｍｉｓ型トランジスタおよびその製造方法
JP2002158350A (ja) * 2000-08-25 2002-05-31 Agere Systems Guardian Corp 垂直型トランジスタの回路接続アーキテクチャ
JP2002299613A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 縦型電界効果トランジスタ及び半導体装置の製造方法
JP2003249648A (ja) * 2002-02-26 2003-09-05 Hitachi Ltd 半導体装置およびその製造方法
JP2004247656A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置及びその製造方法
JP2005285980A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法
JP2007526651A (ja) * 2004-03-02 2007-09-13 タエ−ボク リー 高耐圧用半導体素子及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH098290A (ja) 1995-06-20 1997-01-10 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP3957774B2 (ja) 1995-06-23 2007-08-15 株式会社東芝 半導体装置
US6794699B2 (en) * 2002-08-29 2004-09-21 Micron Technology Inc Annular gate and technique for fabricating an annular gate
JP2004221242A (ja) 2003-01-14 2004-08-05 Renesas Technology Corp 半導体集積回路装置およびその製造方法
KR100699830B1 (ko) * 2004-12-16 2007-03-27 삼성전자주식회사 이레이즈 효율을 개선하는 비휘발성 메모리 소자 및 제조방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02252264A (ja) * 1989-03-27 1990-10-11 Oki Electric Ind Co Ltd 半導体記憶装置の製造方法
JPH056977A (ja) * 1990-11-30 1993-01-14 Toshiba Corp ダイナミツク型半導体記憶装置およびその製造方法
JPH07254700A (ja) * 1994-03-15 1995-10-03 Mitsubishi Electric Corp Ｍｉｓ型トランジスタおよびその製造方法
JP2002158350A (ja) * 2000-08-25 2002-05-31 Agere Systems Guardian Corp 垂直型トランジスタの回路接続アーキテクチャ
JP2002299613A (ja) * 2001-03-30 2002-10-11 Toshiba Corp 縦型電界効果トランジスタ及び半導体装置の製造方法
JP2003249648A (ja) * 2002-02-26 2003-09-05 Hitachi Ltd 半導体装置およびその製造方法
JP2004247656A (ja) * 2003-02-17 2004-09-02 Renesas Technology Corp 半導体装置及びその製造方法
JP2007526651A (ja) * 2004-03-02 2007-09-13 タエ−ボク リー 高耐圧用半導体素子及びその製造方法
JP2005285980A (ja) * 2004-03-29 2005-10-13 Sanyo Electric Co Ltd 半導体装置および半導体装置の製造方法

Cited By (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010251678A (ja) * 2009-04-20 2010-11-04 Unisantis Electronics Japan Ltd 半導体装置の製造方法
US8080458B2 (en) 2009-04-20 2011-12-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device and manufacturing method thereof
US8519475B2 (en) 2009-04-20 2013-08-27 Unisantis Electronics Singapore Pte Ltd. Semiconductor device
JP2011040421A (ja) * 2009-08-06 2011-02-24 Elpida Memory Inc 半導体装置およびその製造方法
JP2011040682A (ja) * 2009-08-18 2011-02-24 Unisantis Electronics Japan Ltd 半導体装置とその製造方法
JP2011100826A (ja) * 2009-11-05 2011-05-19 Elpida Memory Inc 半導体装置の製造方法および半導体装置
JP2012182423A (ja) * 2011-02-28 2012-09-20 Sk Hynix Inc 半導体メモリ素子及びその製造方法
US8759178B2 (en) 2011-11-09 2014-06-24 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing semiconductor device and semiconductor device
US10438836B2 (en) 2011-11-09 2019-10-08 Unisantis Electronics Singapore Pte. Ltd. Method for manufacturing a semiconductor device
US9691896B2 (en) 2011-11-09 2017-06-27 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9614075B2 (en) 2011-11-09 2017-04-04 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9153660B2 (en) 2012-05-17 2015-10-06 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8829601B2 (en) 2012-05-17 2014-09-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8890236B1 (en) 2012-05-17 2014-11-18 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9012981B2 (en) 2012-05-17 2015-04-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9299786B2 (en) 2012-05-17 2016-03-29 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9048315B2 (en) 2012-05-17 2015-06-02 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9166043B2 (en) 2012-05-17 2015-10-20 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8823066B2 (en) 2012-05-18 2014-09-02 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US9601618B2 (en) 2012-05-18 2017-03-21 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9202922B2 (en) 2012-05-18 2015-12-01 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9246001B2 (en) 2012-05-18 2016-01-26 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9252276B2 (en) 2012-05-18 2016-02-02 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9029923B2 (en) 2012-05-18 2015-05-12 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9406768B2 (en) 2012-05-18 2016-08-02 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9437732B2 (en) 2012-05-18 2016-09-06 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9466683B2 (en) 2012-05-18 2016-10-11 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9054085B2 (en) 2012-05-18 2015-06-09 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8697511B2 (en) 2012-05-18 2014-04-15 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
US9666728B2 (en) 2012-05-18 2017-05-30 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US9666712B2 (en) 2012-05-18 2017-05-30 Unisantis Electronics Singapore Pte. Ltd. Semiconductor device
US8877578B2 (en) 2012-05-18 2014-11-04 Unisantis Electronics Singapore Pte. Ltd. Method for producing semiconductor device and semiconductor device
JP5692886B1 (ja) * 2013-04-19 2015-04-01 ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． 半導体装置の製造方法、及び、半導体装置
JP2020202296A (ja) * 2019-06-10 2020-12-17 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法
JP2020202295A (ja) * 2019-06-10 2020-12-17 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法
JP7349698B2 (ja) 2019-06-10 2023-09-25 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法
JP7349699B2 (ja) 2019-06-10 2023-09-25 国立大学法人東北大学 半導体集積回路用のシリコンピラーの作製方法

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