JP5692886B1 - 半導体装置の製造方法、及び、半導体装置 - Google Patents
半導体装置の製造方法、及び、半導体装置 Download PDFInfo
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- JP5692886B1 JP5692886B1 JP2014520854A JP2014520854A JP5692886B1 JP 5692886 B1 JP5692886 B1 JP 5692886B1 JP 2014520854 A JP2014520854 A JP 2014520854A JP 2014520854 A JP2014520854 A JP 2014520854A JP 5692886 B1 JP5692886 B1 JP 5692886B1
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 186
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 59
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 71
- 229920005591 polysilicon Polymers 0.000 claims abstract description 71
- 229910052751 metal Inorganic materials 0.000 claims abstract description 55
- 239000002184 metal Substances 0.000 claims abstract description 55
- 238000005530 etching Methods 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000009792 diffusion process Methods 0.000 claims description 73
- 238000000034 method Methods 0.000 claims description 23
- 229910021332 silicide Inorganic materials 0.000 claims description 23
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 136
- 229910052710 silicon Inorganic materials 0.000 abstract description 136
- 239000010703 silicon Substances 0.000 abstract description 136
- 239000010410 layer Substances 0.000 description 236
- 239000000463 material Substances 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 9
- 239000007769 metal material Substances 0.000 description 6
- 239000011800 void material Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66666—Vertical transistors
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H01L21/02107—Forming insulating materials on a substrate
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
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- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28158—Making the insulator
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- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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Abstract
Description
半導体基板上に平面状半導体層を形成し、前記平面状半導体層上に第1の柱状半導体層と第2の柱状半導体層とを形成する第1の工程と、
前記第1の工程の後、
前記第1の柱状半導体層及び前記第2の柱状半導体層の周囲にゲート絶縁膜を形成し、
前記ゲート絶縁膜の周囲に、金属膜、並びに、前記第1の柱状半導体層及び前記第2の柱状半導体層の間の間隔の1/2の長さより薄い膜厚のポリシリコン膜を成膜し、
第3のレジストを堆積し、前記第1の柱状半導体層及び前記第2の柱状半導体層の上部側壁の前記ポリシリコン膜を露出させ、この露出した前記ポリシリコン膜をエッチングによって除去し、前記第3のレジストを剥離し、前記ポリシリコン膜より上面が低い状態で残存するように前記金属膜をエッチングにより除去する第2の工程と、
を有する、
ことを特徴とする。
ゲート配線を形成するための第4のレジストを形成し、異方性エッチングを行うことにより、前記ゲート配線と、第1のゲート電極と、第2のゲート電極と、を形成する第3の工程を有する、ことが好ましい。
前記第1の工程の後、
前記第1の柱状半導体層及び前記第2の柱状半導体層の上に酸化膜ハードマスクを形成し、前記平面状半導体層上に前記ゲート絶縁膜よりも厚さの厚い酸化膜を形成する工程をさらに含む、ことが好ましい。
前記第4のレジストの上面の高さは、前記第2の工程を経た後の前記ポリシリコン膜の上面の高さよりも低い、ことが好ましい。
前記第1の柱状半導体層の上部に第1のn型拡散層を形成し、前記第1の柱状半導体層の下部及び前記平面状半導体層の上部に第2のn型拡散層を形成し、前記第2の柱状半導体層の上部に第1のp型拡散層を形成し、前記第2の柱状半導体層の下部及び前記平面状半導体層の上部に第2のp型拡散層を形成する第4の工程をさらに含む、ことが好ましい。
前記第1のn型拡散層上、前記第2のn型拡散層上、前記第1のp型拡散層上、前記第2のp型拡散層上、及び前記ゲート配線上にシリサイドを形成する第5の工程をさらに含む、ことが好ましい。
半導体基板上に形成された平面状半導体層と、
前記平面状半導体層上に形成された第1及び第2の柱状半導体層と、
前記第1の柱状半導体層の周囲に形成された第1のゲート絶縁膜と、
前記第1のゲート絶縁膜の周囲に形成された金属膜及びポリシリコン膜の積層構造からなる第1のゲート電極と、
前記第2の柱状半導体層の周囲に形成された第2のゲート絶縁膜と、
前記第2のゲート絶縁膜の周囲に形成された金属膜及びポリシリコン膜の積層構造からなる第2のゲート電極と、
前記第1及び前記第2のゲート電極に接続されたゲート配線と、
前記ゲート配線と前記平面状半導体層との間に形成された前記第1及び第2のゲート絶縁膜よりも厚さが厚い酸化膜と、
前記第1の柱状半導体層の上部に形成された第1のn型拡散層と、
前記第1の柱状半導体層の下部と前記平面状半導体層の上部とに形成された第2のn型拡散層と、
前記第2の柱状半導体層の上部に形成された第1のp型拡散層と、
前記第2の柱状半導体層の下部及び前記平面状半導体層の上部に形成された第2のp型拡散層と、を備え、
前記ポリシリコン膜の膜厚は前記第1の柱状半導体層及び前記第2の柱状半導体層の間の間隔の1/2の長さより薄く形成されており、
前記金属膜の上面の高さは、前記ポリシリコン膜の上面の高さよりも高くされており、
前記金属膜の前記ポリシリコン膜の上面より高い部分の外側面は、絶縁膜サイドウォールにより覆われている、ことが好ましい。
前記ゲート配線は、前記金属膜及び第1のシリサイドの積層構造からなる、ことが好ましい。
ゲート絶縁膜114と、ゲート絶縁膜114の周囲に形成された金属膜115及びポリシリコン膜116の積層構造からなる第2のゲート電極119aと、ポリシリコン膜116のそれぞれの厚さは、第1の柱状シリコン層104と第2の柱状シリコン層105との間の間隔の1/2の長さよりも薄く、かつ、金属膜115の上面の高さは、ポリシリコン膜116の上面の高さよりも高い位置にある。
第1及び第2のゲート電極119b、119aに接続されたゲート配線119cの上面の高さは、第1及び第2のゲート電極119b、119aの上面の高さよりも低い位置にある。
以上により、厚さの薄いゲート材料(ポリシリコン)を用いることで、自己整合プロセスによって、金属材料からなるゲート電極が形成されるSGTの構造を有する半導体装置の製造方法が示された。
102.第1のレジスト
103.第1のレジスト
104.第1の柱状シリコン層
105.第2の柱状シリコン層
106.第2のレジスト
107.平面状シリコン層
108.素子分離膜
109.第1の酸化膜
110.第2の酸化膜
111.酸化膜ハードマスク
112.酸化膜ハードマスク
113.ゲート絶縁膜
114.ゲート絶縁膜
115.金属膜
116.ポリシリコン膜
117.第3のレジスト
118.第4のレジスト
119a.第2のゲート電極
119b.第1のゲート電極
119c.ゲート配線
120.第5のレジスト
121.第1のn型拡散層
122.第2のn型拡散層
123.第6のレジスト
124.第1のp型拡散層
125.第2のp型拡散層
126.酸化膜
127.窒化膜
128a.絶縁膜サイドウォール
128b.絶縁膜サイドウォール
129a.絶縁膜サイドウォール
129b.絶縁膜サイドウォール
129c.絶縁膜サイドウォール
130.シリサイド
131.シリサイド
132.シリサイド
133.シリサイド
134.シリサイド
135.シリサイド
136.コンタクトストッパー
137.層間絶縁膜
138.第7のレジスト
139.コンタクト孔
140.コンタクト孔
141.第8のレジスト
142.コンタクト孔
143.コンタクト孔
144.コンタクト
145.コンタクト
146.コンタクト
147.コンタクト
148.金属層
149.第9のレジスト
150.第9のレジスト
151.第9のレジスト
152.第9のレジスト
153.金属配線
154.金属配線
155.金属配線
156.金属配線
Claims (11)
- 半導体基板上に平面状半導体層を形成し、前記平面状半導体層上に第1の柱状半導体層と第2の柱状半導体層とを形成する第1の工程と、
前記第1の工程の後、
前記第1の柱状半導体層及び前記第2の柱状半導体層の周囲にゲート絶縁膜を形成し、
前記ゲート絶縁膜の周囲に、金属膜、並びに、前記第1の柱状半導体層及び前記第2の柱状半導体層の間の間隔の1/2の長さより薄い膜厚のポリシリコン膜を成膜し、
第3のレジストを堆積し、前記第1の柱状半導体層及び前記第2の柱状半導体層の上部側壁の前記ポリシリコン膜を露出させ、この露出した前記ポリシリコン膜をエッチングによって除去し、前記第3のレジストを剥離し、前記ポリシリコン膜より上面が低い状態で残存するように前記金属膜をエッチングにより除去する第2の工程と、
を有する、
ことを特徴とする半導体装置の製造方法。 - 前記第2の工程の後、
ゲート配線を形成するための第4のレジストを形成し、異方性エッチングを行うことにより、前記ゲート配線と、第1のゲート電極と、第2のゲート電極と、を形成する第3の工程を有する、ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記第1の工程の後、
前記第1の柱状半導体層及び前記第2の柱状半導体層の上に酸化膜ハードマスクを形成し、前記平面状半導体層上に前記ゲート絶縁膜よりも厚さの厚い酸化膜を形成する工程をさらに含む、ことを特徴とする請求項1又は2に記載の半導体装置の製造方法。 - 前記第4のレジストの上面の高さは、前記第2の工程を経た後の前記ポリシリコン膜の上面の高さよりも低い、ことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第3の工程の後、
前記第1の柱状半導体層の上部に第1のn型拡散層を形成し、前記第1の柱状半導体層の下部及び前記平面状半導体層の上部に第2のn型拡散層を形成し、前記第2の柱状半導体層の上部に第1のp型拡散層を形成し、前記第2の柱状半導体層の下部及び前記平面状半導体層の上部に第2のp型拡散層を形成する第4の工程をさらに含む、ことを特徴とする請求項2に記載の半導体装置の製造方法。 - 前記第4の工程の後、
前記第1のn型拡散層上、前記第2のn型拡散層上、前記第1のp型拡散層上、前記第2のp型拡散層上、及び前記ゲート配線上にシリサイドを形成する第5の工程をさらに含む、ことを特徴とする請求項5に記載の半導体装置の製造方法。 - 半導体基板上に形成された平面状半導体層と、
前記平面状半導体層上に形成された第1及び第2の柱状半導体層と、
前記第1の柱状半導体層の周囲に形成された第1のゲート絶縁膜と、
前記第1のゲート絶縁膜の周囲に形成された金属膜及びポリシリコン膜の積層構造からなる第1のゲート電極と、
前記第2の柱状半導体層の周囲に形成された第2のゲート絶縁膜と、
前記第2のゲート絶縁膜の周囲に形成された金属膜及びポリシリコン膜の積層構造からなる第2のゲート電極と、
前記第1及び前記第2のゲート電極に接続されたゲート配線と、
前記ゲート配線と前記平面状半導体層との間に形成された前記第1及び第2のゲート絶縁膜よりも厚さが厚い酸化膜と、
前記第1の柱状半導体層の上部に形成された第1のn型拡散層と、
前記第1の柱状半導体層の下部と前記平面状半導体層の上部とに形成された第2のn型拡散層と、
前記第2の柱状半導体層の上部に形成された第1のp型拡散層と、
前記第2の柱状半導体層の下部及び前記平面状半導体層の上部に形成された第2のp型拡散層と、を備え、
前記ポリシリコン膜の膜厚は前記第1の柱状半導体層及び前記第2の柱状半導体層の間の間隔の1/2の長さより薄く形成されており、
前記金属膜の上面の高さは、前記ポリシリコン膜の上面の高さよりも高くされており、
前記金属膜の前記ポリシリコン膜の上面より高い部分の外側面は、絶縁膜サイドウォールにより覆われている、
ことを特徴とする半導体装置。 - 前記ゲート配線の上面の高さは前記第1及び第2のゲート電極の上面の高さよりも低くされている、ことを特徴とする請求項7に記載の半導体装置。
- 前記ゲート配線は、前記金属膜及び第1のシリサイドの積層構造からなる、ことを特徴とする請求項7又は8に記載の半導体装置。
- 前記ゲート配線の中心線が、前記第1の柱状半導体層の中心点と前記第2の柱状半導体層の中心点とを結ぶ線に対して所定量オフセットしている、ことを特徴とする請求項9に記載の半導体装置。
- 前記第1及び前記第2のn型拡散層上と、前記第1及び前記第2のp型拡散層上とに形成された第2のシリサイドをさらに備える、ことを特徴とする請求項10に記載の半導体装置。
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US9991267B1 (en) * | 2017-01-25 | 2018-06-05 | International Business Machines Corporation | Forming eDRAM unit cell with VFET and via capacitance |
US10211315B2 (en) * | 2017-07-19 | 2019-02-19 | Globalfoundries Inc. | Vertical field-effect transistor having a dielectric spacer between a gate electrode edge and a self-aligned source/drain contact |
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JP2009182317A (ja) * | 2008-01-29 | 2009-08-13 | Unisantis Electronics Japan Ltd | 半導体装置の製造方法 |
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JP3057661B2 (ja) | 1988-09-06 | 2000-07-04 | 株式会社東芝 | 半導体装置 |
JP2703970B2 (ja) | 1989-01-17 | 1998-01-26 | 株式会社東芝 | Mos型半導体装置 |
JP2950558B2 (ja) | 1989-11-01 | 1999-09-20 | 株式会社東芝 | 半導体装置 |
US8598650B2 (en) | 2008-01-29 | 2013-12-03 | Unisantis Electronics Singapore Pte Ltd. | Semiconductor device and production method therefor |
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KR20140077499A (ko) * | 2012-12-14 | 2014-06-24 | 에스케이하이닉스 주식회사 | 저항 변화 메모리 장치 및 그 제조방법 |
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JPH05136374A (ja) * | 1991-04-23 | 1993-06-01 | Canon Inc | 半導体装置及びその製造方法 |
JP2009081163A (ja) * | 2007-09-25 | 2009-04-16 | Elpida Memory Inc | 半導体装置およびその製造方法 |
JP2009182317A (ja) * | 2008-01-29 | 2009-08-13 | Unisantis Electronics Japan Ltd | 半導体装置の製造方法 |
JP2011258780A (ja) * | 2010-06-09 | 2011-12-22 | Unisantis Electronics Japan Ltd | 半導体装置とその製造方法 |
JP2012004244A (ja) * | 2010-06-15 | 2012-01-05 | Unisantis Electronics Singapore Pte Ltd | 半導体装置及びその製造方法 |
JP2010272874A (ja) * | 2010-06-29 | 2010-12-02 | Unisantis Electronics Japan Ltd | 半導体記憶装置 |
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