JP2009081163A5 - - Google Patents
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- Publication number
- JP2009081163A5 JP2009081163A5 JP2007247219A JP2007247219A JP2009081163A5 JP 2009081163 A5 JP2009081163 A5 JP 2009081163A5 JP 2007247219 A JP2007247219 A JP 2007247219A JP 2007247219 A JP2007247219 A JP 2007247219A JP 2009081163 A5 JP2009081163 A5 JP 2009081163A5
- Authority
- JP
- Japan
- Prior art keywords
- columnar body
- diffusion region
- impurity diffusion
- gate electrode
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000009792 diffusion process Methods 0.000 claims 43
- 239000004065 semiconductor Substances 0.000 claims 41
- 239000012535 impurity Substances 0.000 claims 35
- 239000000758 substrate Substances 0.000 claims 20
- 230000002093 peripheral effect Effects 0.000 claims 10
- 230000001681 protective effect Effects 0.000 claims 5
- 238000005530 etching Methods 0.000 claims 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000000034 method Methods 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000001039 wet etching Methods 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007247219A JP2009081163A (ja) | 2007-09-25 | 2007-09-25 | 半導体装置およびその製造方法 |
| US12/235,663 US7791133B2 (en) | 2007-09-25 | 2008-09-23 | Semiconductor device with reduced gate-overlap capacitance and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007247219A JP2009081163A (ja) | 2007-09-25 | 2007-09-25 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009081163A JP2009081163A (ja) | 2009-04-16 |
| JP2009081163A5 true JP2009081163A5 (https=) | 2010-09-30 |
Family
ID=40470711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007247219A Abandoned JP2009081163A (ja) | 2007-09-25 | 2007-09-25 | 半導体装置およびその製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7791133B2 (https=) |
| JP (1) | JP2009081163A (https=) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100946084B1 (ko) * | 2008-03-27 | 2010-03-10 | 주식회사 하이닉스반도체 | 반도체 소자의 수직형 트랜지스터 및 그 형성방법 |
| JP4487221B1 (ja) | 2009-04-17 | 2010-06-23 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置 |
| JP4577592B2 (ja) | 2009-04-20 | 2010-11-10 | 日本ユニサンティスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| JP2011040421A (ja) * | 2009-08-06 | 2011-02-24 | Elpida Memory Inc | 半導体装置およびその製造方法 |
| JP5323610B2 (ja) * | 2009-08-18 | 2013-10-23 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置とその製造方法 |
| JP5602414B2 (ja) * | 2009-11-05 | 2014-10-08 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置の製造方法および半導体装置 |
| KR101168338B1 (ko) * | 2011-02-28 | 2012-07-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 소자 및 그 제조방법 |
| US8759178B2 (en) | 2011-11-09 | 2014-06-24 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing semiconductor device and semiconductor device |
| US10438836B2 (en) | 2011-11-09 | 2019-10-08 | Unisantis Electronics Singapore Pte. Ltd. | Method for manufacturing a semiconductor device |
| US9166043B2 (en) | 2012-05-17 | 2015-10-20 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| US9012981B2 (en) | 2012-05-17 | 2015-04-21 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| US8829601B2 (en) | 2012-05-17 | 2014-09-09 | Unisantis Electronics Singapore Pte. Ltd. | Semiconductor device |
| US8877578B2 (en) | 2012-05-18 | 2014-11-04 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device |
| US8697511B2 (en) | 2012-05-18 | 2014-04-15 | Unisantis Electronics Singapore Pte. Ltd. | Method for producing semiconductor device and semiconductor device |
| JP5692886B1 (ja) * | 2013-04-19 | 2015-04-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドＵｎｉｓａｎｔｉｓ Ｅｌｅｃｔｒｏｎｉｃｓ Ｓｉｎｇａｐｏｒｅ Ｐｔｅ Ｌｔｄ． | 半導体装置の製造方法、及び、半導体装置 |
| WO2014174672A1 (ja) * | 2013-04-26 | 2014-10-30 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体装置の製造方法及び半導体装置 |
| US20150097228A1 (en) * | 2013-10-07 | 2015-04-09 | Nanya Technology Corporation | Method for manufacturing semiconductor device |
| US9318447B2 (en) | 2014-07-18 | 2016-04-19 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor device and method of forming vertical structure |
| CN109494151B (zh) * | 2017-09-12 | 2021-03-30 | 联华电子股份有限公司 | 垂直金属氧化物半导体晶体管及其制作方法 |
| JP7349698B2 (ja) * | 2019-06-10 | 2023-09-25 | 国立大学法人東北大学 | 半導体集積回路用のシリコンピラーの作製方法 |
| JP7349699B2 (ja) * | 2019-06-10 | 2023-09-25 | 国立大学法人東北大学 | 半導体集積回路用のシリコンピラーの作製方法 |
| US11107906B2 (en) | 2019-10-10 | 2021-08-31 | Samsung Electronics Co., Ltd. | Integrated circuit devices including a vertical field-effect transistor (VFET) and methods of forming the same |
| CN113284797B (zh) | 2020-02-20 | 2022-10-18 | 长鑫存储技术有限公司 | 半导体存储器的制作方法 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0831568B2 (ja) * | 1989-03-27 | 1996-03-27 | 沖電気工業株式会社 | 半導体記憶装置の製造方法 |
| JPH056977A (ja) * | 1990-11-30 | 1993-01-14 | Toshiba Corp | ダイナミツク型半導体記憶装置およびその製造方法 |
| JP3428124B2 (ja) * | 1994-03-15 | 2003-07-22 | 三菱電機株式会社 | Ｍｉｓ型トランジスタおよびその製造方法 |
| JPH098290A (ja) | 1995-06-20 | 1997-01-10 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
| JP3957774B2 (ja) | 1995-06-23 | 2007-08-15 | 株式会社東芝 | 半導体装置 |
| US6903411B1 (en) * | 2000-08-25 | 2005-06-07 | Agere Systems Inc. | Architecture for circuit connection of a vertical transistor |
| JP2002299613A (ja) * | 2001-03-30 | 2002-10-11 | Toshiba Corp | 縦型電界効果トランジスタ及び半導体装置の製造方法 |
| JP2003249648A (ja) * | 2002-02-26 | 2003-09-05 | Hitachi Ltd | 半導体装置およびその製造方法 |
| US6794699B2 (en) * | 2002-08-29 | 2004-09-21 | Micron Technology Inc | Annular gate and technique for fabricating an annular gate |
| JP2004221242A (ja) | 2003-01-14 | 2004-08-05 | Renesas Technology Corp | 半導体集積回路装置およびその製造方法 |
| JP2004247656A (ja) * | 2003-02-17 | 2004-09-02 | Renesas Technology Corp | 半導体装置及びその製造方法 |
| KR100540371B1 (ko) * | 2004-03-02 | 2006-01-11 | 이태복 | 고 내압용 반도체 소자 및 그 제조방법 |
| JP2005285980A (ja) * | 2004-03-29 | 2005-10-13 | Sanyo Electric Co Ltd | 半導体装置および半導体装置の製造方法 |
| KR100699830B1 (ko) * | 2004-12-16 | 2007-03-27 | 삼성전자주식회사 | 이레이즈 효율을 개선하는 비휘발성 메모리 소자 및 제조방법 |
-
2007
- 2007-09-25 JP JP2007247219A patent/JP2009081163A/ja not_active Abandoned
-
2008
- 2008-09-23 US US12/235,663 patent/US7791133B2/en active Active
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