JP2009049399A - 表示装置 - Google Patents

表示装置 Download PDF

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Publication number
JP2009049399A
JP2009049399A JP2008191701A JP2008191701A JP2009049399A JP 2009049399 A JP2009049399 A JP 2009049399A JP 2008191701 A JP2008191701 A JP 2008191701A JP 2008191701 A JP2008191701 A JP 2008191701A JP 2009049399 A JP2009049399 A JP 2009049399A
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JP
Japan
Prior art keywords
layer
thin film
semiconductor layer
wiring
film transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008191701A
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English (en)
Japanese (ja)
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JP2009049399A5 (enExample
Inventor
Yoshimoto Kurokawa
義元 黒川
Takayuki Ikeda
隆之 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2008191701A priority Critical patent/JP2009049399A/ja
Publication of JP2009049399A publication Critical patent/JP2009049399A/ja
Publication of JP2009049399A5 publication Critical patent/JP2009049399A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2008191701A 2007-07-26 2008-07-25 表示装置 Withdrawn JP2009049399A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008191701A JP2009049399A (ja) 2007-07-26 2008-07-25 表示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007195252 2007-07-26
JP2008191701A JP2009049399A (ja) 2007-07-26 2008-07-25 表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2014089375A Division JP5766329B2 (ja) 2007-07-26 2014-04-23 液晶表示装置

Publications (2)

Publication Number Publication Date
JP2009049399A true JP2009049399A (ja) 2009-03-05
JP2009049399A5 JP2009049399A5 (enExample) 2011-06-23

Family

ID=40294456

Family Applications (13)

Application Number Title Priority Date Filing Date
JP2008191701A Withdrawn JP2009049399A (ja) 2007-07-26 2008-07-25 表示装置
JP2014089375A Active JP5766329B2 (ja) 2007-07-26 2014-04-23 液晶表示装置
JP2015120530A Active JP6181109B2 (ja) 2007-07-26 2015-06-15 液晶表示装置
JP2017140161A Withdrawn JP2017223965A (ja) 2007-07-26 2017-07-19 液晶表示装置
JP2017218802A Active JP6348650B2 (ja) 2007-07-26 2017-11-14 液晶表示装置
JP2018119039A Withdrawn JP2018159952A (ja) 2007-07-26 2018-06-22 液晶表示装置
JP2020163604A Active JP6829791B1 (ja) 2007-07-26 2020-09-29 液晶表示装置
JP2021009026A Withdrawn JP2021073524A (ja) 2007-07-26 2021-01-22 表示装置
JP2022041476A Active JP7329647B2 (ja) 2007-07-26 2022-03-16 液晶表示装置
JP2023128471A Active JP7440692B2 (ja) 2007-07-26 2023-08-07 液晶表示装置
JP2024020768A Active JP7475566B1 (ja) 2007-07-26 2024-02-15 液晶表示装置
JP2024066006A Active JP7536208B2 (ja) 2007-07-26 2024-04-16 液晶表示装置
JP2024129777A Pending JP2024153903A (ja) 2007-07-26 2024-08-06 表示装置

Family Applications After (12)

Application Number Title Priority Date Filing Date
JP2014089375A Active JP5766329B2 (ja) 2007-07-26 2014-04-23 液晶表示装置
JP2015120530A Active JP6181109B2 (ja) 2007-07-26 2015-06-15 液晶表示装置
JP2017140161A Withdrawn JP2017223965A (ja) 2007-07-26 2017-07-19 液晶表示装置
JP2017218802A Active JP6348650B2 (ja) 2007-07-26 2017-11-14 液晶表示装置
JP2018119039A Withdrawn JP2018159952A (ja) 2007-07-26 2018-06-22 液晶表示装置
JP2020163604A Active JP6829791B1 (ja) 2007-07-26 2020-09-29 液晶表示装置
JP2021009026A Withdrawn JP2021073524A (ja) 2007-07-26 2021-01-22 表示装置
JP2022041476A Active JP7329647B2 (ja) 2007-07-26 2022-03-16 液晶表示装置
JP2023128471A Active JP7440692B2 (ja) 2007-07-26 2023-08-07 液晶表示装置
JP2024020768A Active JP7475566B1 (ja) 2007-07-26 2024-02-15 液晶表示装置
JP2024066006A Active JP7536208B2 (ja) 2007-07-26 2024-04-16 液晶表示装置
JP2024129777A Pending JP2024153903A (ja) 2007-07-26 2024-08-06 表示装置

Country Status (5)

Country Link
US (1) US7897971B2 (enExample)
JP (13) JP2009049399A (enExample)
KR (1) KR101493300B1 (enExample)
CN (1) CN101355089B (enExample)
TW (2) TWI585983B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012039317A1 (ja) * 2010-09-21 2012-03-29 シャープ株式会社 半導体装置およびその製造方法
JP2012069938A (ja) * 2010-08-26 2012-04-05 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2016167624A (ja) * 2009-03-27 2016-09-15 株式会社半導体エネルギー研究所 半導体装置
JP2018107429A (ja) * 2016-11-04 2018-07-05 ディーピーアイエックス リミテッド ライアビリティ カンパニー 金属酸化物医療デバイス製品のための静電気放電（ｅｓｄ）保護
JP2020161829A (ja) * 2009-12-11 2020-10-01 株式会社半導体エネルギー研究所 半導体装置

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US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR100958023B1 (ko) * 2008-11-04 2010-05-17 삼성모바일디스플레이주식회사 유기전계 발광 표시장치
KR101641532B1 (ko) * 2009-02-10 2016-08-01 삼성디스플레이 주식회사 타이밍 제어방법, 이를 수행하기 위한 타이밍 제어장치 및 이를 갖는 표시장치
JP5321269B2 (ja) 2009-06-16 2013-10-23 ソニー株式会社 画像表示装置、画像表示方法、及びプログラム
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
CN102473683B (zh) * 2009-07-15 2015-07-22 斯兰纳半导体美国股份有限公司 具有背侧散热的绝缘体上半导体
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
US9496227B2 (en) 2009-07-15 2016-11-15 Qualcomm Incorporated Semiconductor-on-insulator with back side support layer
WO2011008894A2 (en) * 2009-07-15 2011-01-20 Io Semiconductor Semiconductor-on-insulator with back side support layer
US8921168B2 (en) 2009-07-15 2014-12-30 Silanna Semiconductor U.S.A., Inc. Thin integrated circuit chip-on-board assembly and method of making
US8232597B2 (en) * 2009-07-15 2012-07-31 Io Semiconductor, Inc. Semiconductor-on-insulator with back side connection
KR102775255B1 (ko) 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
EP2478563B1 (en) * 2009-09-16 2021-04-07 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing a samesemiconductor device
EP2486595B1 (en) * 2009-10-09 2019-10-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
KR102358272B1 (ko) 2010-02-26 2022-02-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
CN102214677A (zh) * 2010-04-12 2011-10-12 三星移动显示器株式会社 薄膜晶体管和具有该薄膜晶体管的显示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101631632B1 (ko) 2011-04-22 2016-06-20 삼성전자주식회사 조명기구
KR101884891B1 (ko) * 2012-02-08 2018-08-31 삼성디스플레이 주식회사 표시 장치
KR101678512B1 (ko) * 2012-03-22 2016-11-22 가부시키가이샤 히다치 고쿠사이 덴키 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 기록 매체
KR101949225B1 (ko) 2012-04-16 2019-04-26 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시 장치
KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
US9246133B2 (en) * 2013-04-12 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and light-emitting device
US9257290B2 (en) 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof
CN103762178A (zh) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
CN106463082B (zh) 2014-06-23 2019-07-16 株式会社半导体能源研究所 显示装置及电子设备
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
JP6392061B2 (ja) * 2014-10-01 2018-09-19 東京エレクトロン株式会社 電子デバイス、その製造方法、及びその製造装置
JP6555869B2 (ja) * 2014-10-17 2019-08-07 キヤノン株式会社 静電容量型トランスデューサ
KR102473101B1 (ko) * 2016-04-04 2022-12-01 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 표시 장치
CN109727530A (zh) * 2017-10-31 2019-05-07 昆山工研院新型平板显示技术中心有限公司 柔性显示模组及柔性显示模组制备方法
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CN113767466B (zh) * 2019-04-25 2024-08-02 株式会社索思未来 半导体装置
JP7259944B2 (ja) * 2019-04-25 2023-04-18 株式会社ソシオネクスト 半導体装置
US11011572B2 (en) * 2019-05-10 2021-05-18 Innolux Corporation Laminated structures and electronic devices
CN113450645B (zh) * 2020-03-27 2023-08-01 群创光电股份有限公司 显示面板以及拼接显示装置
KR102887191B1 (ko) * 2020-04-16 2025-11-17 삼성디스플레이 주식회사 표시 장치
CN112365796B (zh) * 2020-11-26 2022-09-27 京东方科技集团股份有限公司 背光模组和显示装置
US20240178235A1 (en) * 2021-08-27 2024-05-30 Beijing Boe Optoelectronics Technology Co., Ltd. Display Substrate and Display Device
KR20230074342A (ko) * 2021-11-19 2023-05-30 삼성디스플레이 주식회사 발광 표시 장치
CN114267686B (zh) * 2021-12-14 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN116364780B (zh) * 2023-03-27 2024-10-01 惠科股份有限公司 薄膜晶体管及其制作方法、静电释放保护电路和显示装置

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