TWI585983B - 顯示裝置 - Google Patents

顯示裝置 Download PDF

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Publication number
TWI585983B
TWI585983B TW097127811A TW97127811A TWI585983B TW I585983 B TWI585983 B TW I585983B TW 097127811 A TW097127811 A TW 097127811A TW 97127811 A TW97127811 A TW 97127811A TW I585983 B TWI585983 B TW I585983B
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TW
Taiwan
Prior art keywords
layer
display device
semiconductor layer
thin film
electrode
Prior art date
Application number
TW097127811A
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English (en)
Chinese (zh)
Other versions
TW200924198A (en
Inventor
黑川義元
池田隆之
Original Assignee
半導體能源研究所股份有限公司
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Publication of TW200924198A publication Critical patent/TW200924198A/zh
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Publication of TWI585983B publication Critical patent/TWI585983B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136204—Arrangements to prevent high voltage or static electricity failures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW097127811A 2007-07-26 2008-07-22 顯示裝置 TWI585983B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007195252 2007-07-26

Publications (2)

Publication Number Publication Date
TW200924198A TW200924198A (en) 2009-06-01
TWI585983B true TWI585983B (zh) 2017-06-01

Family

ID=40294456

Family Applications (2)

Application Number Title Priority Date Filing Date
TW097127811A TWI585983B (zh) 2007-07-26 2008-07-22 顯示裝置
TW104120332A TWI614903B (zh) 2007-07-26 2008-07-22 顯示裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104120332A TWI614903B (zh) 2007-07-26 2008-07-22 顯示裝置

Country Status (5)

Country Link
US (1) US7897971B2 (enExample)
JP (13) JP2009049399A (enExample)
KR (1) KR101493300B1 (enExample)
CN (1) CN101355089B (enExample)
TW (2) TWI585983B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI670849B (zh) * 2017-10-31 2019-09-01 大陸商昆山工研院新型平板顯示技術中心有限公司 柔性顯示模組及柔性顯示模組製備方法

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US9176353B2 (en) * 2007-06-29 2015-11-03 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device
US8330887B2 (en) * 2007-07-27 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device
KR100958023B1 (ko) * 2008-11-04 2010-05-17 삼성모바일디스플레이주식회사 유기전계 발광 표시장치
KR101641532B1 (ko) * 2009-02-10 2016-08-01 삼성디스플레이 주식회사 타이밍 제어방법, 이를 수행하기 위한 타이밍 제어장치 및 이를 갖는 표시장치
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
JP5321269B2 (ja) 2009-06-16 2013-10-23 ソニー株式会社 画像表示装置、画像表示方法、及びプログラム
US9496227B2 (en) 2009-07-15 2016-11-15 Qualcomm Incorporated Semiconductor-on-insulator with back side support layer
US8921168B2 (en) 2009-07-15 2014-12-30 Silanna Semiconductor U.S.A., Inc. Thin integrated circuit chip-on-board assembly and method of making
KR101758852B1 (ko) * 2009-07-15 2017-07-17 퀄컴 인코포레이티드 후면 방열 기능을 갖는 반도체-온-절연체
TWI515878B (zh) * 2009-07-15 2016-01-01 西拉娜半導體美國股份有限公司 絕緣體上半導體結構、自絕緣體上半導體主動元件之通道去除無用積聚多數型載子之方法、及製造積體電路之方法
US9390974B2 (en) 2012-12-21 2016-07-12 Qualcomm Incorporated Back-to-back stacked integrated circuit assembly and method of making
WO2011008894A2 (en) * 2009-07-15 2011-01-20 Io Semiconductor Semiconductor-on-insulator with back side support layer
US9466719B2 (en) 2009-07-15 2016-10-11 Qualcomm Incorporated Semiconductor-on-insulator with back side strain topology
KR102775255B1 (ko) * 2009-09-04 2025-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 제작하기 위한 방법
WO2011033993A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20120093864A (ko) 2009-10-09 2012-08-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011070901A1 (en) * 2009-12-11 2011-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
US8476744B2 (en) 2009-12-28 2013-07-02 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with channel including microcrystalline and amorphous semiconductor regions
CN102754022B (zh) 2010-02-26 2016-11-09 株式会社半导体能源研究所 液晶显示装置
CN102214677A (zh) * 2010-04-12 2011-10-12 三星移动显示器株式会社 薄膜晶体管和具有该薄膜晶体管的显示装置
US9230826B2 (en) 2010-08-26 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Etching method using mixed gas and method for manufacturing semiconductor device
US8704230B2 (en) 2010-08-26 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8735231B2 (en) * 2010-08-26 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of dual-gate thin film transistor
JP2013251284A (ja) * 2010-09-21 2013-12-12 Sharp Corp 半導体装置およびその製造方法
KR101631632B1 (ko) 2011-04-22 2016-06-20 삼성전자주식회사 조명기구
KR101884891B1 (ko) * 2012-02-08 2018-08-31 삼성디스플레이 주식회사 표시 장치
WO2013141370A1 (ja) * 2012-03-22 2013-09-26 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置および記録媒体
KR101949225B1 (ko) 2012-04-16 2019-04-26 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 표시 장치
KR101965256B1 (ko) * 2012-10-17 2019-04-04 삼성디스플레이 주식회사 유기 발광 표시 장치
US9246133B2 (en) * 2013-04-12 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and light-emitting device
US9257290B2 (en) 2013-12-25 2016-02-09 Shenzhen China Star Optoelectronics Technology Co., Ltd. Low temperature poly-silicon thin film transistor and manufacturing method thereof
CN103762178A (zh) * 2013-12-25 2014-04-30 深圳市华星光电技术有限公司 一种低温多晶硅薄膜晶体管及其制造方法
WO2015198183A1 (en) 2014-06-23 2015-12-30 Semiconductor Energy Laboratory Co., Ltd. Display device and electronic device
US9515181B2 (en) 2014-08-06 2016-12-06 Qualcomm Incorporated Semiconductor device with self-aligned back side features
JP6392061B2 (ja) * 2014-10-01 2018-09-19 東京エレクトロン株式会社 電子デバイス、その製造方法、及びその製造装置
JP6555869B2 (ja) 2014-10-17 2019-08-07 キヤノン株式会社 静電容量型トランスデューサ
KR102473101B1 (ko) * 2016-04-04 2022-12-01 티씨엘 차이나 스타 옵토일렉트로닉스 테크놀로지 컴퍼니 리미티드 표시 장치
US10147718B2 (en) * 2016-11-04 2018-12-04 Dpix, Llc Electrostatic discharge (ESD) protection for the metal oxide medical device products
KR102734571B1 (ko) 2018-11-30 2024-11-28 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
WO2020217396A1 (ja) * 2019-04-25 2020-10-29 株式会社ソシオネクスト 半導体装置
JP7259944B2 (ja) * 2019-04-25 2023-04-18 株式会社ソシオネクスト 半導体装置
US11011572B2 (en) * 2019-05-10 2021-05-18 Innolux Corporation Laminated structures and electronic devices
CN113450645B (zh) * 2020-03-27 2023-08-01 群创光电股份有限公司 显示面板以及拼接显示装置
KR102887191B1 (ko) * 2020-04-16 2025-11-17 삼성디스플레이 주식회사 표시 장치
CN112365796B (zh) * 2020-11-26 2022-09-27 京东方科技集团股份有限公司 背光模组和显示装置
CN116034316B (zh) * 2021-08-27 2025-07-04 京东方科技集团股份有限公司 显示基板和显示装置
KR20230074342A (ko) * 2021-11-19 2023-05-30 삼성디스플레이 주식회사 발광 표시 장치
CN114267686B (zh) * 2021-12-14 2023-08-22 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
CN116364780B (zh) * 2023-03-27 2024-10-01 惠科股份有限公司 薄膜晶体管及其制作方法、静电释放保护电路和显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020009890A1 (en) * 2000-07-11 2002-01-24 Nec Corporation Manufacturing method of active matrix substrate
US20040188685A1 (en) * 2003-03-31 2004-09-30 Industrial Technology Research Institute Thin film transistor and fabrication method thereof
US20050012097A1 (en) * 2003-07-14 2005-01-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2007035964A (ja) * 2005-07-27 2007-02-08 Sony Corp 薄膜トランジスタとその製造方法、及び表示装置

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5713777A (en) * 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
JPS56122123A (en) * 1980-03-03 1981-09-25 Shunpei Yamazaki Semiamorphous semiconductor
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
USRE34658E (en) * 1980-06-30 1994-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device of non-single crystal-structure
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
EP0473988A1 (en) * 1990-08-29 1992-03-11 International Business Machines Corporation Method of fabricating a thin film transistor having amorphous/polycrystalline semiconductor channel region
US5849601A (en) * 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
KR950013784B1 (ko) * 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
JP2838318B2 (ja) * 1990-11-30 1998-12-16 株式会社半導体エネルギー研究所 感光装置及びその作製方法
US5414442A (en) * 1991-06-14 1995-05-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method of driving the same
JP3255942B2 (ja) * 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
JP2924441B2 (ja) * 1992-04-27 1999-07-26 日本電気株式会社 薄膜トランジスタ及びその製造方法
JP2661594B2 (ja) * 1995-05-25 1997-10-08 日本電気株式会社 薄膜トランジスタおよびその製造方法
KR100257158B1 (ko) 1997-06-30 2000-05-15 김영환 박막 트랜지스터 및 그의 제조 방법
US6121660A (en) * 1997-09-23 2000-09-19 Semiconductor Energy Laboratory Co., Ltd. Channel etch type bottom gate semiconductor device
US6013930A (en) * 1997-09-24 2000-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having laminated source and drain regions and method for producing the same
US6218219B1 (en) * 1997-09-29 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
JP4376979B2 (ja) * 1998-01-12 2009-12-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) * 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4683688B2 (ja) * 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4718677B2 (ja) * 2000-12-06 2011-07-06 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP4267242B2 (ja) * 2001-03-06 2009-05-27 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP3946547B2 (ja) * 2001-06-05 2007-07-18 シャープ株式会社 アクティブマトリクス基板および表示装置ならびに検出装置
JP3831868B2 (ja) 2001-08-13 2006-10-11 大林精工株式会社 アクティブマトリックス表示装置とその製造方法
JP3842676B2 (ja) * 2002-03-22 2006-11-08 株式会社日立製作所 液晶表示装置
US7592980B2 (en) * 2002-06-05 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP4248306B2 (ja) * 2002-06-17 2009-04-02 シャープ株式会社 液晶表示装置
JP4286496B2 (ja) * 2002-07-04 2009-07-01 株式会社半導体エネルギー研究所 蒸着装置及び薄膜作製方法
JP2004109418A (ja) * 2002-09-18 2004-04-08 Hitachi Ltd 液晶表示装置
JP4439861B2 (ja) * 2002-09-20 2010-03-24 株式会社半導体エネルギー研究所 表示装置の作製方法
JP4984369B2 (ja) * 2002-12-10 2012-07-25 株式会社ジャパンディスプレイイースト 画像表示装置及びその製造方法
JP4112527B2 (ja) * 2003-07-14 2008-07-02 株式会社半導体エネルギー研究所 システムオンパネル型の発光装置の作製方法
JP4748954B2 (ja) 2003-07-14 2011-08-17 株式会社半導体エネルギー研究所 液晶表示装置
TWI319622B (en) * 2003-10-01 2010-01-11 Samsung Electronics Co Ltd Thin film transistor array panel and liquid crystal display including the same
JP4574158B2 (ja) * 2003-10-28 2010-11-04 株式会社半導体エネルギー研究所 半導体表示装置及びその作製方法
KR100557732B1 (ko) * 2003-12-26 2006-03-06 엘지.필립스 엘시디 주식회사 듀얼패널타입 유기전계발광장치 및 그 제조방법
TWI366701B (en) * 2004-01-26 2012-06-21 Semiconductor Energy Lab Method of manufacturing display and television
JP4299717B2 (ja) * 2004-04-14 2009-07-22 Ｎｅｃ液晶テクノロジー株式会社 薄膜トランジスタとその製造方法
JP2005322845A (ja) * 2004-05-11 2005-11-17 Sekisui Chem Co Ltd 半導体デバイスと、その製造装置、および製造方法
KR20060046241A (ko) * 2004-06-29 2006-05-17 엘지.필립스 엘시디 주식회사 액정표시소자
KR101107981B1 (ko) * 2004-09-03 2012-01-25 삼성전자주식회사 표시 장치용 기판, 액정 표시 장치 및 그 제조방법
JP4592384B2 (ja) * 2004-10-25 2010-12-01 シャープ株式会社 液晶表示装置
EP1674922A1 (en) * 2004-12-27 2006-06-28 Samsung Electronics Co., Ltd. Liquid crystal display
JP4571855B2 (ja) * 2004-12-28 2010-10-27 シャープ株式会社 液晶表示装置用基板及びそれを備えた液晶表示装置及びその駆動方法
KR101085451B1 (ko) * 2005-02-11 2011-11-21 삼성전자주식회사 표시장치용 박막트랜지스터 기판과 그 제조방법
CN100463018C (zh) * 2005-05-23 2009-02-18 夏普株式会社 有源矩阵衬底、显示装置以及像素缺陷修正方法
US7995177B2 (en) * 2005-06-09 2011-08-09 Sharp Kabushiki Kaisha Liquid crystal display device
KR101134932B1 (ko) * 2005-06-14 2012-04-17 엘지디스플레이 주식회사 액정표시소자 및 그 제조방법
KR101219039B1 (ko) * 2005-06-14 2013-01-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치
JP4577114B2 (ja) * 2005-06-23 2010-11-10 ソニー株式会社 薄膜トランジスタの製造方法および表示装置の製造方法
KR101152528B1 (ko) * 2005-06-27 2012-06-01 엘지디스플레이 주식회사 누설전류를 줄일 수 있는 액정표시소자 및 그 제조방법
JP2007041096A (ja) * 2005-08-01 2007-02-15 Sanyo Epson Imaging Devices Corp 電気光学装置およびその製造方法、電子機器
JP4039446B2 (ja) 2005-08-02 2008-01-30 エプソンイメージングデバイス株式会社 電気光学装置及び電子機器
KR101240644B1 (ko) * 2005-08-09 2013-03-11 삼성디스플레이 주식회사 박막 트랜지스터 표시판
JP4874599B2 (ja) * 2005-08-11 2012-02-15 東芝モバイルディスプレイ株式会社 液晶表示装置
TWI409934B (zh) * 2005-10-12 2013-09-21 半導體能源研究所股份有限公司 半導體裝置
KR101158896B1 (ko) * 2005-10-28 2012-06-25 삼성전자주식회사 박막트랜지스터 기판 및 이의 제조방법과,박막트랜지스터를 갖는 액정표시패널 및 전계발광 표시패널
KR20070051045A (ko) * 2005-11-14 2007-05-17 삼성전자주식회사 액정 표시 장치
JP5144055B2 (ja) * 2005-11-15 2013-02-13 三星電子株式会社 表示基板及びこれを有する表示装置
KR101383714B1 (ko) * 2005-12-02 2014-04-09 삼성디스플레이 주식회사 액정 표시 장치
KR100962793B1 (ko) * 2005-12-26 2010-06-10 샤프 가부시키가이샤 액티브 매트릭스 기판 및 액정 디스플레이
US8921858B2 (en) * 2007-06-29 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US7897971B2 (en) * 2007-07-26 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Display device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020009890A1 (en) * 2000-07-11 2002-01-24 Nec Corporation Manufacturing method of active matrix substrate
US20040188685A1 (en) * 2003-03-31 2004-09-30 Industrial Technology Research Institute Thin film transistor and fabrication method thereof
US20050012097A1 (en) * 2003-07-14 2005-01-20 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JP2007035964A (ja) * 2005-07-27 2007-02-08 Sony Corp 薄膜トランジスタとその製造方法、及び表示装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI670849B (zh) * 2017-10-31 2019-09-01 大陸商昆山工研院新型平板顯示技術中心有限公司 柔性顯示模組及柔性顯示模組製備方法

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