JP2009033136A - Soi基板の製造方法及び半導体装置の作製方法 - Google Patents
Soi基板の製造方法及び半導体装置の作製方法 Download PDFInfo
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- JP2009033136A JP2009033136A JP2008166931A JP2008166931A JP2009033136A JP 2009033136 A JP2009033136 A JP 2009033136A JP 2008166931 A JP2008166931 A JP 2008166931A JP 2008166931 A JP2008166931 A JP 2008166931A JP 2009033136 A JP2009033136 A JP 2009033136A
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- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920000078 poly(4-vinyltriphenylamine) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002480 polybenzimidazole Polymers 0.000 description 1
- 229920002577 polybenzoxazole Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- XXCMBPUMZXRBTN-UHFFFAOYSA-N strontium sulfide Chemical compound [Sr]=S XXCMBPUMZXRBTN-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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Abstract
【解決手段】半導体基板より分離され、絶縁表面を有する支持基板に接合された半導体層に電磁波を照射し、電磁波の照射された半導体層表面に研磨処理を行う。電磁波の照射により半導体層の少なくとも一部の領域を溶融させ、半導体層中の結晶欠陥を低減させることができる。さらに、研磨処理によって半導体層表面を研磨し、平坦化することができる。従って、電磁波の照射と研磨処理によって、結晶欠陥が低減され、かつ平坦性も高い半導体層を有するSOI基板を作製することができる。
【選択図】図1
Description
本発明の半導体装置の製造方法について、図1乃至図4を参照して説明する。
本実施の形態では、高性能及び高信頼性な半導体素子を有する半導体装置を、歩留まりよく作製することを目的とした半導体装置の作製方法の一例としてCMOS(相補型金属酸化物半導体:Complementary Metal Oxide Semiconductor)に関して図5及び図6を用いて説明する。なお、実施の形態1と同一部分又は同様な機能を有する部分の繰り返しの説明は省略する。
本実施の形態では、高性能及び高信頼性を付与された半導体装置として表示機能を有する半導体装置(液晶表示装置ともいう)を歩留まり良く生産することを目的とした半導体装置の作製方法の例を、図7を用いて説明する。詳しくは表示素子に液晶表示素子を用いる液晶表示装置について説明する。
本発明を適用して発光素子を有する半導体装置を形成することができるが、該発光素子から発せられる光は、下面放射、上面放射、両面放射のいずれかを行う。本実施の形態では、下面放射型、両面放射型、上面放射型の高性能及び高信頼性を付与された半導体装置として表示機能を有する半導体装置(表示装置、発光装置ともいう)を歩留まり良く生産することを目的とした半導体装置の作製方法の例を、図8、図9、図10を用いて説明する。
本実施の形態では、高性能及び高信頼性を付与された半導体装置として表示機能を有する半導体装置(表示装置、発光装置ともいう)の例について説明する。詳しくは表示素子に発光素子を用いる発光表示装置について説明する。
本実施の形態では、高性能及び高信頼性を付与された半導体装置として表示機能を有する半導体装置の他の例を説明する。本実施の形態では、本発明の半導体装置における発光素子に適用することのできる他の構成を、図11及び図12を用いて説明する。
本発明によって形成される表示素子を有する半導体装置によって、テレビジョン装置を完成させることができる。高性能で、かつ高信頼性を付与することを目的としたテレビジョン装置の例を説明する。
本実施の形態では、高性能、かつ高い信頼性を付与することを目的とした半導体装置の例について説明する。詳しくは半導体装置の一例として、マイクロプロセッサ及び非接触でデータの送受信を行うことのできる演算機能を備えた半導体装置の一例について説明する。
本実施の形態を図14を用いて説明する。本実施の形態は、実施の形態1乃至8で作製する半導体装置を有するパネルを用いたモジュールの例を示す。本実施の形態では、高性能で、かつ高信頼性を付与することを目的とした半導体装置を有するモジュールの例を説明する。
本実施の形態を図14及び図15を用いて説明する。図15は、この実施の形態9で作製するモジュールを含む無線を用いた持ち運び可能な小型電話機(携帯電話)の一態様を示している。パネル900はハウジング1001に脱着自在に組み込んでモジュール999と容易に組み合わせできるようにしている。ハウジング1001は組み入れる電子機器に合わせて、形状や寸法を適宜変更することができる。
本発明を適用して、様々な表示機能を有する半導体装置を作製することができる。即ち、それら表示機能を有する半導体装置を表示部に組み込んだ様々な電子機器に本発明を適用できる。本実施の形態では、高性能でかつ高信頼性を付与することを目的とした表示機能を有する半導体装置を有する電子機器の例を説明する。
Claims (20)
- 半導体基板の一つの面からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板の一つの面上、又は支持基板上のどちらか一方に絶縁層を形成し、
前記半導体基板と前記支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に研磨処理を行うことを特徴とするSOI基板の製造方法。 - 半導体基板の一つの面上に絶縁層を形成し、
前記半導体基板に、前記半導体基板の一つの面上に形成された前記絶縁層からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板と支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に研磨処理を行うことを特徴とするSOI基板の製造方法。 - 半導体基板の一つの面からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板の一つの面上、又は支持基板上のどちらか一方に絶縁層を形成し、
前記半導体基板と前記支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層表面に第1の研磨処理を行い、
前記第1の研磨処理を行った半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に第2の研磨処理を行うことを特徴とするSOI基板の製造方法。 - 半導体基板の一つの面上に絶縁層を形成し、
前記半導体基板に、前記半導体基板の一つの面上に形成された前記絶縁層からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板と前記支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層表面に第1の研磨処理を行い、
前記第1の研磨処理を行った半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に第2の研磨処理を行うことを特徴とするSOI基板の製造方法。 - 請求項3または請求項4において、前記第1の研磨処理及び前記第2の研磨処理は化学的機械研磨(Chemical Mechanical Polishing)法により行うことを特徴とするSOI基板の製造方法。
- 半導体基板の一つの面からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板の一つの面上、又は支持基板上のどちらか一方に絶縁層を形成し、
前記半導体基板と前記支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層表面にエッチング処理を行い、
前記エッチング処理を行った半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に研磨処理を行うことを特徴とするSOI基板の製造方法。 - 半導体基板の一つの面上に絶縁層を形成し、
前記半導体基板に、前記半導体基板の一つの面上に形成された前記絶縁層からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成し、
前記半導体基板と支持基板を、前記絶縁層を挟んで重ね合わせた状態で、前記脆化層に亀裂を生じさせ、前記半導体基板を前記脆化層で分離する熱処理を行い、前記半導体基板より半導体層を前記支持基板上に形成し、
前記半導体層表面にエッチング処理を行い、
前記エッチング処理を行った半導体層に電磁波を照射し、
前記電磁波を照射した半導体層表面に研磨処理を行うことを特徴とするSOI基板の製造方法。 - 請求項1、請求項2、請求項6、及び請求項7のいずれか一項において、前記研磨処理は化学的機械研磨(Chemical Mechanical Polishing)法により行うことを特徴とするSOI基板の製造方法。
- 請求項1、請求項3、及び請求項6のいずれか一項において、前記半導体基板の一つの面上に保護層を形成し、前記半導体基板に、前記半導体基板の一つの面上に形成された前記保護層からイオンを照射して、前記半導体基板の一つの面から一定の深さに脆化層を形成することを特徴とするSOI基板の製造方法。
- 請求項2、請求項4、及び請求項7のいずれか一項において、前記半導体基板の一つの面上に保護層を形成し、前記保護層上に前記絶縁層を形成することを特徴とするSOI基板の製造方法。
- 請求項9または請求項10において、前記保護層は、窒化シリコン層、酸化シリコン層、窒化酸化シリコン層、又は酸化窒化シリコン層から選ばれた一層又は複数の層による積層構造とすることを特徴とするSOI基板の製造方法。
- 請求項1乃至11のいずれか一項において、前記電磁波はレーザ光であることを特徴とするSOI基板の製造方法。
- 請求項1乃至12のいずれか一項において、前記電磁波を照射することにより前記半導体層の少なくとも一部を溶融することを特徴とするSOI基板の製造方法。
- 請求項13において、フラッシュアニールにより前記半導体層の少なくとも一部を溶融することを特徴とするSOI基板の製造方法。
- 請求項1乃至14のいずれか一項において、前記電磁波を照射する雰囲気は酸素を10%以上含むことを特徴とするSOI基板の製造方法。
- 請求項1乃至15のいずれか一項において、前記電磁波を照射する雰囲気に含まれる酸素を10ppm以下とすることを特徴とするSOI基板の製造方法。
- 請求項1乃至16のいずれか一項に記載のSOI基板の製造方法において形成する前記半導体層を用いて半導体素子を形成することを特徴とする半導体装置の作製方法。
- 請求項1乃至16のいずれか一項に記載のSOI基板の製造方法において形成する前記半導体層を用いて半導体素子を形成し、
前記半導体素子と電気的に接続する表示素子を形成することを特徴とする半導体装置の作製方法。 - 請求項18において、前記表示素子として液晶表示素子を形成することを特徴とする半導体装置の作製方法。
- 請求項18において、前記表示素子として発光素子を形成することを特徴とする半導体装置の作製方法。
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US8361873B2 (en) | 2013-01-29 |
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US20100203706A1 (en) | 2010-08-12 |
US7727846B2 (en) | 2010-06-01 |
CN101335188A (zh) | 2008-12-31 |
CN101335188B (zh) | 2011-11-09 |
EP2009687B1 (en) | 2016-08-17 |
US20090004878A1 (en) | 2009-01-01 |
CN102306629A (zh) | 2012-01-04 |
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