JP5658916B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5658916B2 JP5658916B2 JP2010136049A JP2010136049A JP5658916B2 JP 5658916 B2 JP5658916 B2 JP 5658916B2 JP 2010136049 A JP2010136049 A JP 2010136049A JP 2010136049 A JP2010136049 A JP 2010136049A JP 5658916 B2 JP5658916 B2 JP 5658916B2
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6653—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using the removal of at least part of spacer, e.g. disposable spacer
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成について、図1および図2を参照して説明する。
本実施の形態では、SOI基板を用いた半導体装置の作製方法について説明する。ここでは、半導体装置を構成する半導体素子の代表例としてn型FETとp型FETを作製する場合の一例について図3乃至図5を用いて説明する。
本実施の形態では、SOI基板を用いた半導体装置の作製方法について説明する。ここでは、半導体装置を構成する半導体素子の代表例としてn型FETとp型FETを作製する場合の一例について図6及び図7を用いて説明する。なお本実施の形態では、実施の形態1の図1(B)で示した半導体装置の作製方法について説明する。なお、上記実施の形態2で述べたSOI基板を用いた半導体装置の作製方法と重複する箇所については、上記実施の形態2の記載を援用し、説明を省略するものとする。
本実施の形態では、SOI基板を用いた半導体装置の作製方法について説明する。ここでは、半導体装置を構成する半導体素子の代表例としてn型FETとp型FETを作製する場合の一例について図8及び図9を用いて説明する。なお本実施の形態では、実施の形態1の図2(A)で示した半導体装置の作製方法について説明する。なお、上記実施の形態2で述べたSOI基板を用いた半導体装置の作製方法と重複する箇所については、上記実施の形態2の記載を援用し、説明を省略するものとする。
本実施の形態では、SOI基板を用いた半導体装置の作製方法について説明する。ここでは、半導体装置を構成する半導体素子の代表例としてn型FETとp型FETを作製する場合の一例について図10及び図11を用いて説明する。なお本実施の形態では、実施の形態1の図2(B)で示した半導体装置の作製方法について説明する。また本実施の形態で説明する半導体装置の作製方法において、上記実施の形態3で説明した半導体装置と異なる点は、高導電性領域118a、高導電性領域118bを形成しない点にある。そのため本実施の形態の説明で、上記実施の形態2及び実施の形態3で述べたSOI基板を用いた半導体装置の作製方法と重複する箇所については、上記実施の形態2及び実施の形態3の記載を援用し、説明を省略するものとする。
本実施の形態では、本発明の一態様である半導体装置の他の一例について説明する。
本実施の形態では、本発明の一態様である半導体装置の一例として、演算機能を有する半導体装置について説明する。
本実施の形態では、計算機シミュレーションを用いて、開示する発明の効果について検証した結果を示す。ここではsilvaco社製のソフトウェア(SmartSpice)を用いて、19段のリングオシレータにおけるチャネル長と遅延時間との関係を計算した。また、半導体層を構成する材料としてシリコンを用いる場合について計算を行った。チャネル長については、0.04μm〜0.25μmの間で変化させている。
<SOI基板の作製工程>
本実施の形態では、SOI基板の作製方法の一例について、図20を参照して説明する。
次に、本実施の形態で用いるベース基板1000の一態様として、太陽電池グレードシリコンを用いる場合について詳細に説明する。
SiO2+2C→Si+CO
SiO2+2C→Si+CO
102 絶縁層
104 単結晶半導体層
108 素子分離絶縁層
106a 単結晶半導体層
106b 単結晶半導体層
110a ゲート絶縁層
110b ゲート絶縁層
112a ゲート電極
112b ゲート電極
114a 低導電性領域
114b 低導電性領域
116 絶縁層
116a サイドウォール絶縁層
116b サイドウォール絶縁層
118a 高導電性領域
118b 高導電性領域
120 金属層
122a 金属化合物領域
122b 金属化合物領域
124a 金属化合物領域
124b 金属化合物領域
126 マスク
128a 金属領域
128b 金属領域
130a 金属領域
130b 金属領域
132a 層間絶縁層
132b 層間絶縁層
134a 導電層
134b 導電層
601 一点鎖線
602 金属層
603 マスク
604a 金属領域
604b 金属領域
604c 金属領域
605a 金属領域
605b 金属領域
605c 金属領域
701 金属層
702 金属層
703 マスク
704a 金属領域
704b 金属領域
704c 金属領域
705a 金属領域
705b 金属領域
705c 金属領域
706a 金属領域
706b 金属領域
706c 金属領域
707a 金属領域
707b 金属領域
707c 金属領域
801a 絶縁層
801b 絶縁層
802a 絶縁層
802b 絶縁層
803a 絶縁層
803b 絶縁層
804a 絶縁層
804b 絶縁層
805a 絶縁層
805b 絶縁層
900 マイクロプロセッサ
901 演算回路
902 演算回路制御部
903 命令解析部
904 制御部
905 タイミング制御部
906 レジスタ
907 レジスタ制御部
908 バスインターフェース
911 RFCPU
912 アナログ回路部
913 デジタル回路部
914 共振回路
915 整流回路
916 定電圧回路
917 リセット回路
918 発振回路
919 復調回路
920 変調回路
921 RFインターフェース
922 制御レジスタ
923 クロックコントローラ
924 CPUインターフェース
925 中央処理ユニット
926 ランダムアクセスメモリ
927 専用メモリ
928 アンテナ
929 容量部
930 電源管理回路
1000 ベース基板
1010 ボンド基板
1012 脆化領域
1014 絶縁層
1016 半導体層
1018 半導体層
1020 ボンド基板
Claims (3)
- 絶縁層と、
前記絶縁層上の、半導体材料を含むチャネル形成領域と、
前記チャネル形成領域と接する領域を有し、前記半導体材料を含む低導電性領域と、
前記低導電性領域と接する領域を有し、前記半導体材料を含む高導電性領域と、
前記高導電性領域上の、前記半導体材料の金属化合物を含む金属化合物領域と、
前記金属化合物領域と接する領域を有する金属領域と、
前記チャネル形成領域上のゲート絶縁層と、
前記ゲート絶縁層上のゲート電極と、
前記低導電性領域上のサイドウォール絶縁層と、
前記金属領域を一部に含むソース電極またはドレイン電極と、を有し、
前記ゲート電極は、第1の層と、前記第1の層上の第2の層と、前記第2の層上の第3の層とを有し、
前記第2の層と、前記金属化合物領域とは、同一の導電膜と反応させる工程を経て形成されたものであり、
前記第3の層と、前記金属領域とは、前記導電膜を加工する工程を経て形成されたものであり、
前記ゲート電極の側面は、前記サイドウォール絶縁層と接する領域を有し、
前記第1の層の最上面は、前記サイドウォール絶縁層の最上面より上方に位置し、
前記低導電性領域は、前記絶縁層と接する領域と、前記サイドウォール絶縁層と接する領域とを有し、
前記金属領域は、前記サイドウォール絶縁層と接する領域を有さず、
前記低導電性領域に添加された導電型を付与する不純物元素の濃度は、1×1019cm−3以上1×1021cm−3以下であり、且つ、前記高導電性領域に添加された導電型を付与する不純物元素の濃度より小さい濃度であり、
前記金属化合物を構成する金属元素と、前記金属領域を構成する金属元素とは同一であり、
前記半導体材料は、H+イオンが照射されたボンド基板を前記絶縁層を介してベース基板に貼り合わせ、前記ボンド基板から分離されたボンド基板の一部の半導体膜である半導体装置。 - 請求項1において、
前記サイドウォール絶縁層は、積層構造を有する半導体装置。 - 請求項1又は2において、
前記高導電性領域は、前記金属領域から露出した領域を有する半導体装置。
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JP5933300B2 (ja) * | 2011-03-16 | 2016-06-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
KR101873911B1 (ko) * | 2011-06-07 | 2018-07-04 | 삼성전자주식회사 | 콘택 구조체를 포함하는 반도체 소자와 그 제조방법, 및 그것을 포함하는 전자 시스템 |
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JP2010239123A (ja) * | 2009-03-12 | 2010-10-21 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
US8288821B2 (en) * | 2009-03-13 | 2012-10-16 | International Business Machines Corporation | SOI (silicon on insulator) substrate improvements |
JP2011029610A (ja) * | 2009-06-26 | 2011-02-10 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
-
2010
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- 2010-06-23 US US12/821,481 patent/US8426918B2/en not_active Expired - Fee Related
- 2010-06-24 KR KR1020100059991A patent/KR101790964B1/ko active IP Right Grant
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US20100327352A1 (en) | 2010-12-30 |
TW201119038A (en) | 2011-06-01 |
KR20110000513A (ko) | 2011-01-03 |
KR101790964B1 (ko) | 2017-10-27 |
JP2011029611A (ja) | 2011-02-10 |
TWI527217B (zh) | 2016-03-21 |
US8426918B2 (en) | 2013-04-23 |
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