JP2009033111A - 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 - Google Patents

露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Download PDF

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Publication number
JP2009033111A
JP2009033111A JP2008137409A JP2008137409A JP2009033111A JP 2009033111 A JP2009033111 A JP 2009033111A JP 2008137409 A JP2008137409 A JP 2008137409A JP 2008137409 A JP2008137409 A JP 2008137409A JP 2009033111 A JP2009033111 A JP 2009033111A
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Japan
Prior art keywords
liquid
exposure
cleaning
exposure apparatus
substrate
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Pending
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JP2008137409A
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Japanese (ja)
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JP2009033111A5 (https=
Inventor
Hiroyuki Nagasaka
博之 長坂
Yasushi Yoda
安史 依田
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Nikon Corp
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Nikon Corp
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Priority to JP2008137409A priority Critical patent/JP2009033111A/ja
Publication of JP2009033111A publication Critical patent/JP2009033111A/ja
Publication of JP2009033111A5 publication Critical patent/JP2009033111A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008137409A 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法 Pending JP2009033111A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008137409A JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007140474 2007-05-28
JP2007177217 2007-07-05
JP2008137409A JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Publications (2)

Publication Number Publication Date
JP2009033111A true JP2009033111A (ja) 2009-02-12
JP2009033111A5 JP2009033111A5 (https=) 2011-05-12

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JP2008137409A Pending JP2009033111A (ja) 2007-05-28 2008-05-27 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法

Country Status (5)

Country Link
US (2) US8189168B2 (https=)
JP (1) JP2009033111A (https=)
KR (1) KR20100031694A (https=)
TW (1) TW200903589A (https=)
WO (1) WO2008146819A1 (https=)

Cited By (2)

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JP2009267404A (ja) * 2008-04-24 2009-11-12 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法
JP2011029599A (ja) * 2009-05-14 2011-02-10 Asml Netherlands Bv リソグラフィ装置及び装置の動作方法

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US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
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CN109622545B (zh) * 2019-01-11 2024-06-04 夏绎 一种在超声波发射面与清洗物表面之间保持清洗水的结构
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US8823918B2 (en) 2008-04-24 2014-09-02 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
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Also Published As

Publication number Publication date
US20090251672A1 (en) 2009-10-08
KR20100031694A (ko) 2010-03-24
TW200903589A (en) 2009-01-16
WO2008146819A1 (ja) 2008-12-04
US20120204913A1 (en) 2012-08-16
US8189168B2 (en) 2012-05-29

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