KR20100031694A - 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 - Google Patents

노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 Download PDF

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KR20100031694A
KR20100031694A KR1020097027052A KR20097027052A KR20100031694A KR 20100031694 A KR20100031694 A KR 20100031694A KR 1020097027052 A KR1020097027052 A KR 1020097027052A KR 20097027052 A KR20097027052 A KR 20097027052A KR 20100031694 A KR20100031694 A KR 20100031694A
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South Korea
Prior art keywords
liquid
exposure
cleaning
substrate
vibration
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Withdrawn
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KR1020097027052A
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English (en)
Korean (ko)
Inventor
히로유키 나가사카
야스시 요다
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가부시키가이샤 니콘
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Publication of KR20100031694A publication Critical patent/KR20100031694A/ko
Withdrawn legal-status Critical Current

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2041Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70933Purge, e.g. exchanging fluid or gas to remove pollutants

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020097027052A 2007-05-28 2008-05-27 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법 Withdrawn KR20100031694A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007140474 2007-05-28
JPJP-P-2007-140474 2007-05-28
JP2007177217 2007-07-05
JPJP-P-2007-177217 2007-07-05

Publications (1)

Publication Number Publication Date
KR20100031694A true KR20100031694A (ko) 2010-03-24

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KR1020097027052A Withdrawn KR20100031694A (ko) 2007-05-28 2008-05-27 노광 장치, 디바이스 제조 방법, 세정 장치, 및 클리닝 방법 그리고 노광 방법

Country Status (5)

Country Link
US (2) US8189168B2 (https=)
JP (1) JP2009033111A (https=)
KR (1) KR20100031694A (https=)
TW (1) TW200903589A (https=)
WO (1) WO2008146819A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101245659B1 (ko) * 2008-04-24 2013-03-20 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2131242A1 (en) * 2008-06-02 2009-12-09 ASML Netherlands B.V. Substrate table, lithographic apparatus and device manufacturing method
NL2004540A (en) 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
TWI643027B (zh) * 2009-11-09 2018-12-01 尼康股份有限公司 曝光裝置、曝光方法、曝光裝置之維修方法、曝光裝置之調整方法、以及元件製造方法
NL2005610A (en) 2009-12-02 2011-06-06 Asml Netherlands Bv Lithographic apparatus and surface cleaning method.
US20120019802A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, immersion exposure apparatus, device fabricating method, program, and storage medium
US20120019804A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, cleaning apparatus, device fabricating method, program, and storage medium
US20120019803A1 (en) 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US9632426B2 (en) * 2011-01-18 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ immersion hood cleaning
CN111048972A (zh) * 2012-07-30 2020-04-21 工业研究与发展基金会有限公司 太阳能系统、使用太阳能的方法、用于发电的方法和设备
US12270748B2 (en) * 2018-09-12 2025-04-08 Lam Research Corporation Method and apparatus for measuring particles
JP7252322B2 (ja) 2018-09-24 2023-04-04 エーエスエムエル ネザーランズ ビー.ブイ. プロセスツール及び検査方法
CN109622545B (zh) * 2019-01-11 2024-06-04 夏绎 一种在超声波发射面与清洗物表面之间保持清洗水的结构
US11032941B2 (en) * 2019-03-28 2021-06-08 Intel Corporation Modular thermal energy management designs for data center computing
US12427446B2 (en) * 2022-03-23 2025-09-30 Semes Co., Ltd. Liquid supplying unit and liquid supplying method

Family Cites Families (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
SG102627A1 (en) 1996-11-28 2004-03-26 Nikon Corp Lithographic device
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
JP3747566B2 (ja) 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
JPH11162831A (ja) * 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
WO1999027568A1 (en) * 1997-11-21 1999-06-03 Nikon Corporation Projection aligner and projection exposure method
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6897963B1 (en) 1997-12-18 2005-05-24 Nikon Corporation Stage device and exposure apparatus
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
KR100841147B1 (ko) 1998-03-11 2008-06-24 가부시키가이샤 니콘 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법
WO1999049504A1 (fr) 1998-03-26 1999-09-30 Nikon Corporation Procede et systeme d'exposition par projection
JPH11307430A (ja) * 1998-04-23 1999-11-05 Canon Inc 露光装置およびデバイス製造方法ならびに駆動装置
EP1079223A4 (en) 1998-05-19 2002-11-27 Nikon Corp INSTRUMENT AND METHOD FOR MEASURING ABERATIONS, PROJECTION DEVICE INCLUDING THIS INSTRUMENT AND ITS MANUFACTURING METHOD
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
EP1364257A1 (en) 2001-02-27 2003-11-26 ASML US, Inc. Simultaneous imaging of two reticles
CN1286146C (zh) * 2001-03-09 2006-11-22 株式会社东芝 电子装置的制造系统
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
JP2005536775A (ja) 2002-08-23 2005-12-02 株式会社ニコン 投影光学系、フォトリソグラフィ方法および露光装置、並びに露光装置を用いた方法
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
US7110081B2 (en) * 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100585476B1 (ko) 2002-11-12 2006-06-07 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 디바이스 제조방법
EP1420298B1 (en) 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN101382738B (zh) 2002-11-12 2011-01-12 Asml荷兰有限公司 光刻投射装置
EP1571695A4 (en) * 2002-12-10 2008-10-15 Nikon Corp EXPOSURE DEVICE AND METHOD FOR PRODUCING THE DEVICE
ATE424026T1 (de) 2002-12-13 2009-03-15 Koninkl Philips Electronics Nv Flüssigkeitsentfernung in einem verfahren und einer einrichtung zum bestrahlen von flecken auf einer schicht
EP1732075A3 (en) 2002-12-19 2007-02-21 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
EP2466621B1 (en) 2003-02-26 2015-04-01 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR20170016014A (ko) * 2003-04-11 2017-02-10 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
KR101159564B1 (ko) 2003-04-11 2012-06-25 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
TWI424470B (zh) * 2003-05-23 2014-01-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP2466382B1 (en) 2003-07-08 2014-11-26 Nikon Corporation Wafer table for immersion lithography
WO2005029559A1 (ja) 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
KR101248325B1 (ko) 2003-09-26 2013-03-27 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
EP2717295B1 (en) 2003-12-03 2018-07-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
JP5106858B2 (ja) 2003-12-15 2012-12-26 カール・ツァイス・エスエムティー・ゲーエムベーハー 高開口数と平面状端面とを有する投影対物レンズ
WO2005059645A2 (en) 2003-12-19 2005-06-30 Carl Zeiss Smt Ag Microlithography projection objective with crystal elements
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
EP1713115B1 (en) 2004-02-04 2016-05-04 Nikon Corporation Exposure apparatus, exposure method, and device producing method
JP2005286068A (ja) 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
EP3098835B1 (en) 2004-06-21 2017-07-26 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
JP4677833B2 (ja) * 2004-06-21 2011-04-27 株式会社ニコン 露光装置、及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
US20080068568A1 (en) 2004-09-30 2008-03-20 Nikon Corporation Projection Optical Device And Exposure Apparatus
JP2006147639A (ja) * 2004-11-16 2006-06-08 Canon Inc 露光装置
WO2006062065A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060250588A1 (en) 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
JP2006313766A (ja) * 2005-05-06 2006-11-16 Nikon Corp 基板保持装置及びステージ装置並びに露光装置
JP5045008B2 (ja) * 2005-07-08 2012-10-10 株式会社ニコン 液浸露光用基板、露光方法及びデバイス製造方法
JP2007116073A (ja) * 2005-09-21 2007-05-10 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
EP1936665A4 (en) * 2005-09-21 2010-03-31 Nikon Corp EXPOSURE DEVICE, EXPOSURE METHOD AND COMPONENT MANUFACTURING METHOD
JP2007102580A (ja) * 2005-10-05 2007-04-19 Nikon Corp 位置決め手法、及び位置決め装置
US7986395B2 (en) 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
EP2034515A4 (en) * 2006-05-23 2012-01-18 Nikon Corp MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE AND COMPONENT MANUFACTURING METHOD
US8564759B2 (en) * 2006-06-29 2013-10-22 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101245659B1 (ko) * 2008-04-24 2013-03-20 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치 및 리소그래피 장치를 작동시키는 방법

Also Published As

Publication number Publication date
US20090251672A1 (en) 2009-10-08
JP2009033111A (ja) 2009-02-12
US8189168B2 (en) 2012-05-29
TW200903589A (en) 2009-01-16
US20120204913A1 (en) 2012-08-16
WO2008146819A1 (ja) 2008-12-04

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PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PC1203 Withdrawal of no request for examination

St.27 status event code: N-1-6-B10-B12-nap-PC1203

WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid
R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000