JP2009032387A - 半導体記憶装置及び半導体装置 - Google Patents

半導体記憶装置及び半導体装置 Download PDF

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Publication number
JP2009032387A
JP2009032387A JP2008166733A JP2008166733A JP2009032387A JP 2009032387 A JP2009032387 A JP 2009032387A JP 2008166733 A JP2008166733 A JP 2008166733A JP 2008166733 A JP2008166733 A JP 2008166733A JP 2009032387 A JP2009032387 A JP 2009032387A
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Prior art keywords
transistor
inverter circuit
line
terminal
terminal connected
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JP2008166733A
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Japanese (ja)
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JP2009032387A5 (enExample
Inventor
Masafumi Fujita
雅史 藤田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2008166733A priority Critical patent/JP2009032387A/ja
Publication of JP2009032387A publication Critical patent/JP2009032387A/ja
Publication of JP2009032387A5 publication Critical patent/JP2009032387A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/08—Addressing or allocation; Relocation in hierarchically structured memory systems, e.g. virtual memory systems
    • G06F12/0802—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches
    • G06F12/0891—Addressing of a memory level in which the access to the desired data or data block requires associative addressing means, e.g. caches using clearing, invalidating or resetting means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • H10B10/125—Static random access memory [SRAM] devices comprising a MOSFET load element the MOSFET being a thin film transistor [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Static Random-Access Memory (AREA)
  • Read Only Memory (AREA)
JP2008166733A 2007-06-29 2008-06-26 半導体記憶装置及び半導体装置 Withdrawn JP2009032387A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008166733A JP2009032387A (ja) 2007-06-29 2008-06-26 半導体記憶装置及び半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007172938 2007-06-29
JP2008166733A JP2009032387A (ja) 2007-06-29 2008-06-26 半導体記憶装置及び半導体装置

Publications (2)

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JP2009032387A true JP2009032387A (ja) 2009-02-12
JP2009032387A5 JP2009032387A5 (enExample) 2011-07-21

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JP2008166733A Withdrawn JP2009032387A (ja) 2007-06-29 2008-06-26 半導体記憶装置及び半導体装置

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US (2) US7929332B2 (enExample)
EP (1) EP2020658B1 (enExample)
JP (1) JP2009032387A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013211001A (ja) * 2012-03-01 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
US9043561B2 (en) 2012-05-02 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Storage device
JP2015222612A (ja) * 2005-07-29 2015-12-10 株式会社半導体エネルギー研究所 半導体装置

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US7929332B2 (en) * 2007-06-29 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device and semiconductor device
FR2951549B1 (fr) 2009-10-15 2013-08-23 Olivier Schussler Procede d'obtention de bioprotheses medicales implantables
WO2011162147A1 (en) * 2010-06-23 2011-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5827520B2 (ja) 2010-09-13 2015-12-02 株式会社半導体エネルギー研究所 半導体記憶装置
US8792260B2 (en) 2010-09-27 2014-07-29 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit and semiconductor device using the same
EP2522307B1 (en) 2011-05-08 2020-09-30 ITSO Medical AB Device for delivery of medical devices to a cardiac valve
KR101922397B1 (ko) 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103597545B (zh) 2011-06-09 2016-10-19 株式会社半导体能源研究所 高速缓冲存储器及其驱动方法
JP6012263B2 (ja) 2011-06-09 2016-10-25 株式会社半導体エネルギー研究所 半導体記憶装置
US9135182B2 (en) * 2012-06-01 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Central processing unit and driving method thereof
JP6463341B2 (ja) * 2013-04-30 2019-01-30 コーニング インコーポレイテッド 空乏層を備えたガラスおよびその上に構築された多結晶シリコンｔｆｔ
JP6289974B2 (ja) * 2014-03-31 2018-03-07 ルネサスエレクトロニクス株式会社 半導体装置
JP6434870B2 (ja) * 2015-07-28 2018-12-05 ルネサスエレクトロニクス株式会社 電子装置
CN112802510A (zh) * 2021-01-27 2021-05-14 中国科学院微电子研究所 一种非对称sram存储单元和sram存储器
CN112992221B (zh) * 2021-02-24 2023-03-24 中国科学院微电子研究所 一种基于背栅结构的sram存储单元、sram存储器以及上电方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015222612A (ja) * 2005-07-29 2015-12-10 株式会社半導体エネルギー研究所 半導体装置
JP2013211001A (ja) * 2012-03-01 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
US9043561B2 (en) 2012-05-02 2015-05-26 Semiconductor Energy Laboratory Co., Ltd. Storage device

Also Published As

Publication number Publication date
US8259487B2 (en) 2012-09-04
EP2020658A3 (en) 2009-08-19
US7929332B2 (en) 2011-04-19
EP2020658B1 (en) 2014-06-18
US20110188296A1 (en) 2011-08-04
EP2020658A2 (en) 2009-02-04
US20090003051A1 (en) 2009-01-01

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