JP2008306193A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2008306193A JP2008306193A JP2008153026A JP2008153026A JP2008306193A JP 2008306193 A JP2008306193 A JP 2008306193A JP 2008153026 A JP2008153026 A JP 2008153026A JP 2008153026 A JP2008153026 A JP 2008153026A JP 2008306193 A JP2008306193 A JP 2008306193A
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Abstract
【解決手段】順方向特性にビルトイン電圧を有するワイドギャップバイポーラ半導体素子を形成するように、互いに異なる導電型を有する少なくとも2層のワイドギャップ半導体層1、2、3を積層する。積層欠陥を有するワイドギャップ半導体層1、2、3に、所定の照射エネルギーのγ線、電子線または荷電粒子線を所定量照射する。
【選択図】図1
Description
2001 IEEE ELECTRON DEVICE LETTERS, Vol.22, No.3, p.127-p.129 Proceedings of the 14th International Symposium on Power Semiconductor Devices & ICs 2002の p.41-p.44
={(ビルドイン電圧)+(オン抵抗)×(通電電流)}×(通電電流)+(スイッチング損失)・・・(1)
SiのIGBTはSiの自励型サイリスタに比べて、オン抵抗がやや大きい。そのために定常損失はやや大きい。しかし、スイッチング速度が非常に速いのでスイッチング損失が非常に小さく、結果としてトータル損失が小さい。SiCなどのワイドギャップバイポーラ半導体装置は、オン抵抗がSiバイポーラ半導体装置よりも小さい。しかしSiCはSiよりエネルギーギャップが大きい。そのためにSiCの半導体装置のビルドイン電圧はSiの半導体装置のビルトイン電圧に比べると2.2から6.1倍と遙かに大きい。従ってSiCの半導体装置は定常損失が非常に大きくなるので、トータル損失はSiの半導体装置よりも大きくなる。以上のように、従来の技術では低損失かつ可制御電流の大きいSiCのパワー半導体装置の実現は困難である。
以上に述べた考察および実験結果に基づいて、本発明の半導体装置の製造方法は、
高不純物濃度の第1の導電型のワイドギャップ半導体のカソード領域の上に、低不純物濃度の第2の導電型のワイドギャップ半導体のドリフト層を形成する工程、
前記ドリフト層の上に第1の導電型のワイドギャップ半導体のベース領域を形成する工程、
前記ベース領域の上に第2の導電型のワイドギャップ半導体のアノード領域を形成する工程、及び
積層欠陥を有する前記カソード領域、ドリフト領域、ベース領域及び/またはアノード領域に、所定の照射エネルギーのγ線、電子線または荷電粒子線を所定量照射する工程を有する。
別の局面では、本発明の半導体装置の製造方法は、
順方向特性にビルトイン電圧を有するワイドギャップバイポーラ半導体素子を形成するように、互いに異なる導電型を有する少なくとも2層のワイドギャップ半導体層を積層する工程、および
積層欠陥を有する前記ワイドギャップ半導体層に、所定の照射エネルギーのγ線、電子線または荷電粒子線を所定量照射する工程を有する。
一実施形態の半導体装置の製造方法では、
前記γ線、電子線または荷電粒子線のうち前記電子線が前記ワイドギャップ半導体層に照射され、
前記ワイドギャップ半導体層内のキャリアの寿命が所定の範囲になるように、前記電子線の照射量は調整されていることを特徴とする。
一実施形態の半導体装置の製造方法では、
前記γ線、電子線または荷電粒子線のうち前記電子線が前記ワイドギャップ半導体層に照射され、
前記ワイドギャップ半導体層内のキャリアの寿命が所定の範囲になるように、前記電子線の照射エネルギーは0.1MeVから20MeVの範囲内、前記電子線の照射量は単位面積当たりの電子数が5×10 11 /cm 2 から5×10 14 /cm 2 の範囲内にそれぞれ調整されていることを特徴とする。
また、本発明の半導体装置の製造方法は、そのような半導体装置を作製できる。
《第1実施例》
《第2実施例》
《第3実施例》
《第4実施例》
を必要としないので構造が簡単になり、半導体装置を小型にすることができる。
《第5実施例》
2 ドリフト層
3 アノード領域
4 電界緩和領域
5 表面保護膜
6 アノード電極
7 カソード電極
8 リード線
9、11 リードピン
10、38、67、125 支持体
12 絶縁ガラス
13 pnダイオード素子
14 金属キャップ
15、46、85、127 ヒーター
18 温度センサ
21 カソード領域
22 バッファー領域
24 ベース領域
25 アノード領域
27 表面保護膜
28 アノード電極
31 ゲート電極
32 カソード電極
42 合成高分子化合物
51 GaNGTOサイリスタ
52 SiCホトダイオード
53 カソード領域
54 ゲート領域
55 アノード領域
57 表面保護膜
60 発光窓
80 受光部
88 ヒートシンク
90 インバータ装置
98 ファン
100a、100b スイッチングモジュール
Claims (4)
- 高不純物濃度の第1の導電型のワイドギャップ半導体のカソード領域の上に、低不純物濃度の第2の導電型のワイドギャップ半導体のドリフト層を形成する工程、
前記ドリフト層の上に第1の導電型のワイドギャップ半導体のベース領域を形成する工程、
前記ベース領域の上に第2の導電型のワイドギャップ半導体のアノード領域を形成する工程、及び
積層欠陥を有する前記カソード領域、ドリフト領域、ベース領域及び/またはアノード領域に、所定の照射エネルギーのγ線、電子線または荷電粒子線を所定量照射する工程
を有する半導体装置の製造方法。 - 順方向特性にビルトイン電圧を有するワイドギャップバイポーラ半導体素子を形成するように、互いに異なる導電型を有する少なくとも2層のワイドギャップ半導体層を積層する工程、および
積層欠陥を有する前記ワイドギャップ半導体層に、所定の照射エネルギーのγ線、電子線または荷電粒子線を所定量照射する工程
を有する半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記γ線、電子線または荷電粒子線のうち前記電子線が前記ワイドギャップ半導体層に照射され、
前記ワイドギャップ半導体層内のキャリアの寿命が所定の範囲になるように、前記電子線の照射量は調整されていることを特徴とする半導体装置の製造方法。 - 請求項2に記載の半導体装置の製造方法において、
前記γ線、電子線または荷電粒子線のうち前記電子線が前記ワイドギャップ半導体層に照射され、
前記ワイドギャップ半導体層内のキャリアの寿命が所定の範囲になるように、前記電子線の照射エネルギーは0.1MeVから20MeVの範囲内、前記電子線の照射量は単位面積当たりの電子数が5×10 11 /cm 2 から5×10 14 /cm 2 の範囲内にそれぞれ調整されていることを特徴とする半導体装置の製造方法。
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- 2004-08-19 EP EP11007461A patent/EP2398049A3/en not_active Withdrawn
- 2004-08-19 US US10/530,883 patent/US7544970B2/en not_active Expired - Fee Related
- 2004-08-19 JP JP2005513297A patent/JP4317550B2/ja not_active Expired - Fee Related
- 2004-08-19 WO PCT/JP2004/011936 patent/WO2005020320A1/ja active Application Filing
- 2004-08-19 EP EP11007462.2A patent/EP2400543A3/en not_active Withdrawn
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Cited By (3)
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WO2016117030A1 (ja) * | 2015-01-20 | 2016-07-28 | 三菱電機株式会社 | 半導体装置 |
JPWO2016117030A1 (ja) * | 2015-01-20 | 2017-06-22 | 三菱電機株式会社 | 半導体装置 |
US10505518B2 (en) | 2015-01-20 | 2019-12-10 | Mitsubishi Electric Corporation | Semiconductor device with substrate temperature monitor circuit |
Also Published As
Publication number | Publication date |
---|---|
CN1701439A (zh) | 2005-11-23 |
CN101165860A (zh) | 2008-04-23 |
JP2008294452A (ja) | 2008-12-04 |
EP1657748A4 (en) | 2009-09-30 |
EP2398049A2 (en) | 2011-12-21 |
CN101271871A (zh) | 2008-09-24 |
US20060186435A1 (en) | 2006-08-24 |
EP2398049A3 (en) | 2012-12-19 |
US7462888B2 (en) | 2008-12-09 |
JP2008311653A (ja) | 2008-12-25 |
EP2400543A2 (en) | 2011-12-28 |
US20050285228A1 (en) | 2005-12-29 |
CN100416803C (zh) | 2008-09-03 |
JPWO2005020320A1 (ja) | 2006-10-19 |
EP1657748A1 (en) | 2006-05-17 |
CN101271871B (zh) | 2011-05-25 |
WO2005020320A1 (ja) | 2005-03-03 |
US20060208276A1 (en) | 2006-09-21 |
US7482237B2 (en) | 2009-01-27 |
US7544970B2 (en) | 2009-06-09 |
CN101165860B (zh) | 2010-04-07 |
US7462886B2 (en) | 2008-12-09 |
EP2400543A3 (en) | 2013-08-28 |
US20080012042A1 (en) | 2008-01-17 |
US20080204115A1 (en) | 2008-08-28 |
JP4317550B2 (ja) | 2009-08-19 |
JP4741630B2 (ja) | 2011-08-03 |
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