JPH09501270A - 炭化ケイ素サイリスタ - Google Patents
炭化ケイ素サイリスタInfo
- Publication number
- JPH09501270A JPH09501270A JP7506582A JP50658295A JPH09501270A JP H09501270 A JPH09501270 A JP H09501270A JP 7506582 A JP7506582 A JP 7506582A JP 50658295 A JP50658295 A JP 50658295A JP H09501270 A JPH09501270 A JP H09501270A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- layer
- gate
- silicon carbide
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 126
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000002093 peripheral effect Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 235000011468 Albizia julibrissin Nutrition 0.000 claims 1
- 240000007185 Albizia julibrissin Species 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 241000238558 Eucarida Species 0.000 claims 1
- 241001134453 Lista Species 0.000 claims 1
- 239000003610 charcoal Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 104
- 239000000463 material Substances 0.000 description 25
- 239000004065 semiconductor Substances 0.000 description 22
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 230000002441 reversible effect Effects 0.000 description 9
- 238000001020 plasma etching Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910021339 platinum silicide Inorganic materials 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical group [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 230000008719 thickening Effects 0.000 description 2
- 230000001052 transient effect Effects 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 241000863814 Thyris Species 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 229940045860 white wax Drugs 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.広い温度範囲にわたって動作可能なサイリスタ(10)であって、該サイ リスタ(10)は、 アノード電極(12)と、 ゲート(14)と、 カソード電極(15)と、 前記ゲート(14)の表面、及び、前記電極の少なくとも1つの表面に設けら れるオーミック接点(18、19、20)とを備え、 前記ゲート(14)及び前記電極(12、15)の中の少なくとも1つが、炭 化ケイ素から形成されることを特徴とするサイリスタ。 2.請求項1のサイリスタ(10)において、前記アノード電極(12)、ゲ ート(14)及びカソード電極(15)が各々、3C、2H、4H、6H及び1 5Rから成る群から選択されたポリタイプを有する炭化ケイ素から形成されるこ とを特徴とするサイリスタ。 3.請求項1又は2のサイリスタ(10)において、前記アノード電極(12 )と前記ゲート(14)との間に炭化ケイ素のドリフト領域(13)を更に備え 、前記カソード電極(15)が、前記ゲート(14)に隣接して設けられている ことを特徴とするサイリスタ。 4.請求項1又は2のサイリスタ(45)において、前記カソード電極(41 )と前記ゲート(50)との間に。炭化ケイ素のドリフト領域(40)を更に備 え、前記アノード電極(51)が、前記ゲート(47)に隣接して設けられてい ることを特徴とするサイリスタ。 5.請求項3のサイリスタ(10)において、 第1の導電性タイプを有する炭化ケイ素の第1の層が、前記アノード電極(1 2)を形成し、 前記第1の層の上に設けられた第2の導電性タイプを有する炭化ケイ素の第2 の層が、前記ドリフト領域(13)を形成し、 前記第2の層の上に設けられた第1の導電性タイプを有する炭化ケイ素の第3 の層が、前記ゲート(14)を形成し、 前記第3の層の上に設けられた第2の導電性タイプを有する炭化ケイ素の第4 の層が、前記カソード電極(15)を形成していることを特徴とするサイリスタ 。 6.請求項5のサイリスタ(10)において、前記アノード電極(12)が、 第1の導電性タイプを有すると共に前記第1の導電性タイプを有する前記第1の 層を支持する、炭化ケイ素基板(11)を更に備えることを特徴とするサイリス タ。 7.請求項4のサイリスタ(45)において、 第1の導電性タイプを有する炭化ケイ素の第1の層が、前記カソード電極(4 1)を形成し、 前記第1の層の上に設けられた第2の導電性タイプを有する炭化ケイ素の第2 の層が、前記ドリフト領域(48)を形成し、 前記第2の層の上に設けられる第1の導電性タイプを有する炭化ケイ素の第3 の層が、前記ゲート(50)を形成し、 前記第3の層の上に設けられる第2の導電性タイプを有するSiC層の第4の 層が、前記アノード電極(51)を形成することを特徴とするサイリスタ。 8.請求項7のサイリスタ(45)において、前記カソード電極(47)が、 第1の導電性タイプを有すると共に前記第1の導電性タイプを有する第1の層を 支持する、炭化ケイ素から形成された基板(46)を更に備えることを特徴とす るサイリスタ。 9.請求項1、2、5、6、7又は8のサイリスタ(10)において、前記ゲ ート(14)の表面、及び、前記オーミック接点(18、19、20)が設けら れている前記電極(12、15)の少なくとも一方の表面が、同じ方向を向いた 表面を有していることを特徴とするサイリスタ。 10.請求項1、5、6、7又は8のサイリスタ(10)において、前記ゲート (14)の表面、及び、その上に前記オーミック接点(18、19、20)が設 けられている前記電極(12、15)の少なくとも一方の表面が、反対方向を向 いた表面を有することを特徴とするサイリスタ。 11.請求項1又は2のサイリスタ(10)において、その上に前記アノード電 極(12)が設けられ、該アノード電極(12)を支持するための、基板(11 )を更に備えることを特徴とするサイリスタ。 12.請求項1又は2のサイリスタ(10)において、その上に前記カソード電 極(15)が設けられ、該カソード電極(15)を支持するための、基板(11 )を更に備えることを特徴とするサイリスタ。 13.請求項11のサイリスタ(10)において、前記アノード電極(12)が 、炭化ケイ素基板(11)と、該基板(11)の上に設けられた炭化ケイ素のエ ピタキシャル層(12)とを備えることを特徴とするサイリスタ。 14.請求項1のサイリスタ(45)において、前記カソード電極(41)が、 炭化ケイ素基板(46)と、該基板(46)の上に設けられたが掛けのエピタキ シャル層(47)とを備えることを特徴とするサイリスタ。 15.請求項5、6、7又は8のサイリスタ(10)において、前記第1の導電 性タイプが、p形の炭化ケイ素を含み、前記第2の導電性タイプが、n形の炭化 ケイ素を含むことを特徴とするサイリスタ。 16.請求項5、6、7又は8のサイリスタ(30)において、前記第1の導電 性タイプが、n形の炭化ケイ素を含み、前記第2の導電性タイプが、p形の炭化 ケイ素を含むことを特徴とするサイリスタ。 17.請求項2、5、6、7又は8のサイリスタ(10)において、当該サイリ スタ(10)の露出表面に、パッシベーション層(16)を更に備えることを特 徴とするサイリスタ。 18.請求項7又は8のサイリスタ(45)において、ゲート層(50)に対す るゲート接点(55)を形成するために、前記アノード電極(51)及び前記ゲ ート層(50)にトレンチ(57)を更に備えることを特徴とするサイリスタ。 19.請求項5又は6のサイリスタ(10)において、ゲート層(14)に対す るゲート接点(19)を形成するために、前記カソード電極(15)及び前記ゲ ート層(14)に、トレンチ(21)を更に備えることを特徴とするサイリスタ 。 20.請求項2、5、6、7又は8のサイリスタ(10)において、当該サイリ スタ(10)に電圧が印加された時に、当該サイリスタ(10)の空乏領域を制 限するためのメサ型の端子周縁部(17)を更に備えることを特徴とするサイリ スタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US103,866 | 1993-08-09 | ||
US08/103,866 US5539217A (en) | 1993-08-09 | 1993-08-09 | Silicon carbide thyristor |
PCT/US1994/008990 WO1995005006A1 (en) | 1993-08-09 | 1994-08-05 | Silicon carbide thyristor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09501270A true JPH09501270A (ja) | 1997-02-04 |
JP3751976B2 JP3751976B2 (ja) | 2006-03-08 |
Family
ID=22297451
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50658295A Expired - Lifetime JP3751976B2 (ja) | 1993-08-09 | 1994-08-05 | 炭化ケイ素サイリスタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US5539217A (ja) |
EP (1) | EP0713610A1 (ja) |
JP (1) | JP3751976B2 (ja) |
KR (1) | KR100284750B1 (ja) |
AU (1) | AU7827594A (ja) |
WO (1) | WO1995005006A1 (ja) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004153189A (ja) * | 2002-11-01 | 2004-05-27 | Furukawa Electric Co Ltd:The | GaN系III−V族窒化物半導体スイッチング素子 |
WO2008044801A1 (fr) * | 2006-10-13 | 2008-04-17 | Sanyo Electric Co., Ltd. | Dispositif semiconducteur et procédé de fabrication de celui-ci |
JP2008306193A (ja) * | 2003-08-22 | 2008-12-18 | Kansai Electric Power Co Inc:The | 半導体装置の製造方法 |
JP2008546172A (ja) * | 2005-05-18 | 2008-12-18 | クリー インコーポレイテッド | 双方向阻止能力を有する高電圧炭化珪素デバイス及びその作製方法 |
JP2010062252A (ja) * | 2008-09-02 | 2010-03-18 | Kansai Electric Power Co Inc:The | バイポーラ型半導体装置 |
JP2010135789A (ja) * | 2008-12-01 | 2010-06-17 | Cree Inc | 低角度オフカット炭化ケイ素結晶上の安定なパワーデバイス |
US8497552B2 (en) | 2008-12-01 | 2013-07-30 | Cree, Inc. | Semiconductor devices with current shifting regions and related methods |
JP2013536576A (ja) * | 2010-07-26 | 2013-09-19 | クリー インコーポレイテッド | 表面パッシベーションのための半導体レッジ層を有する電子デバイス構造 |
Families Citing this family (86)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE9404452D0 (sv) * | 1994-12-22 | 1994-12-22 | Abb Research Ltd | Semiconductor device having an insulated gate |
SE504916C2 (sv) * | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
US5877515A (en) * | 1995-10-10 | 1999-03-02 | International Rectifier Corporation | SiC semiconductor device |
US5663580A (en) * | 1996-03-15 | 1997-09-02 | Abb Research Ltd. | Optically triggered semiconductor device |
JP3230650B2 (ja) * | 1996-03-27 | 2001-11-19 | 富士電機株式会社 | 炭化けい素半導体基板とその製造方法およびその基板を用いた炭化けい素半導体素子 |
US6011279A (en) * | 1997-04-30 | 2000-01-04 | Cree Research, Inc. | Silicon carbide field controlled bipolar switch |
US5969378A (en) * | 1997-06-12 | 1999-10-19 | Cree Research, Inc. | Latch-up free power UMOS-bipolar transistor |
US6121633A (en) * | 1997-06-12 | 2000-09-19 | Cree Research, Inc. | Latch-up free power MOS-bipolar transistor |
US5903020A (en) * | 1997-06-18 | 1999-05-11 | Northrop Grumman Corporation | Silicon carbide static induction transistor structure |
WO1999005728A1 (en) | 1997-07-25 | 1999-02-04 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
DE19741928C1 (de) * | 1997-09-10 | 1998-09-24 | Siemens Ag | Halbleiterbauelement |
US5831289A (en) * | 1997-10-06 | 1998-11-03 | Northrop Grumman Corporation | Silicon carbide gate turn-off thyristor arrangement |
US6559038B2 (en) | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | Method for growing p-n heterojunction-based structures utilizing HVPE techniques |
US6479839B2 (en) | 1997-11-18 | 2002-11-12 | Technologies & Devices International, Inc. | III-V compounds semiconductor device with an AlxByInzGa1-x-y-zN non continuous quantum dot layer |
US6476420B2 (en) | 1997-11-18 | 2002-11-05 | Technologies And Devices International, Inc. | P-N homojunction-based structures utilizing HVPE growth III-V compound layers |
US6555452B2 (en) | 1997-11-18 | 2003-04-29 | Technologies And Devices International, Inc. | Method for growing p-type III-V compound material utilizing HVPE techniques |
US6890809B2 (en) * | 1997-11-18 | 2005-05-10 | Technologies And Deviles International, Inc. | Method for fabricating a P-N heterojunction device utilizing HVPE grown III-V compound layers and resultant device |
US6599133B2 (en) | 1997-11-18 | 2003-07-29 | Technologies And Devices International, Inc. | Method for growing III-V compound semiconductor structures with an integral non-continuous quantum dot layer utilizing HVPE techniques |
US20020047135A1 (en) * | 1997-11-18 | 2002-04-25 | Nikolaev Audrey E. | P-N junction-based structures utilizing HVPE grown III-V compound layers |
US6849862B2 (en) * | 1997-11-18 | 2005-02-01 | Technologies And Devices International, Inc. | III-V compound semiconductor device with an AlxByInzGa1-x-y-zN1-a-bPaAsb non-continuous quantum dot layer |
US6472300B2 (en) | 1997-11-18 | 2002-10-29 | Technologies And Devices International, Inc. | Method for growing p-n homojunction-based structures utilizing HVPE techniques |
US6559467B2 (en) | 1997-11-18 | 2003-05-06 | Technologies And Devices International, Inc. | P-n heterojunction-based structures utilizing HVPE grown III-V compound layers |
JP3216804B2 (ja) * | 1998-01-06 | 2001-10-09 | 富士電機株式会社 | 炭化けい素縦形fetの製造方法および炭化けい素縦形fet |
DE19925233A1 (de) * | 1998-06-08 | 1999-12-09 | Siemens Ag | Halbleiteranordnung mit ohmscher Kontaktierung und Verfahren zur Kontaktierung einer Halbleiteranordnung |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
KR100683877B1 (ko) | 1999-03-04 | 2007-02-15 | 니치아 카가쿠 고교 가부시키가이샤 | 질화물 반도체 레이저소자 |
US6218254B1 (en) | 1999-09-22 | 2001-04-17 | Cree Research, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
US6329675B2 (en) | 1999-08-06 | 2001-12-11 | Cree, Inc. | Self-aligned bipolar junction silicon carbide transistors |
US7892974B2 (en) * | 2000-04-11 | 2011-02-22 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US7125786B2 (en) * | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6475889B1 (en) | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6787816B1 (en) * | 2000-09-01 | 2004-09-07 | Rensselaer Polytechnic Institute | Thyristor having one or more doped layers |
US6501099B2 (en) * | 2001-03-05 | 2002-12-31 | The United States Of America As Represented By The Secretary Of The Army | Modified-anode gate turn-off thyristor |
US6627924B2 (en) * | 2001-04-30 | 2003-09-30 | Ibm Corporation | Memory system capable of operating at high temperatures and method for fabricating the same |
US6770911B2 (en) * | 2001-09-12 | 2004-08-03 | Cree, Inc. | Large area silicon carbide devices |
US6514779B1 (en) | 2001-10-17 | 2003-02-04 | Cree, Inc. | Large area silicon carbide devices and manufacturing methods therefor |
US6900477B1 (en) | 2001-12-07 | 2005-05-31 | The United States Of America As Represented By The Secretary Of The Army | Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture |
US6734462B1 (en) * | 2001-12-07 | 2004-05-11 | The United States Of America As Represented By The Secretary Of The Army | Silicon carbide power devices having increased voltage blocking capabilities |
US6955978B1 (en) * | 2001-12-20 | 2005-10-18 | Fairchild Semiconductor Corporation | Uniform contact |
CA2381128A1 (en) * | 2002-04-09 | 2003-10-09 | Quantiscript Inc. | Plasma polymerized electron beam resist |
JP4338701B2 (ja) * | 2003-04-09 | 2009-10-07 | 関西電力株式会社 | ゲートターンオフサイリスタ |
US8120139B2 (en) * | 2003-12-05 | 2012-02-21 | International Rectifier Corporation | Void isolated III-nitride device |
US7314521B2 (en) | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low micropipe 100 mm silicon carbide wafer |
US7314520B2 (en) * | 2004-10-04 | 2008-01-01 | Cree, Inc. | Low 1c screw dislocation 3 inch silicon carbide wafer |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7391057B2 (en) | 2005-05-18 | 2008-06-24 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7528040B2 (en) * | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US20060267021A1 (en) * | 2005-05-27 | 2006-11-30 | General Electric Company | Power devices and methods of manufacture |
JP2007042803A (ja) * | 2005-08-02 | 2007-02-15 | Honda Motor Co Ltd | イオン注入マスクおよびその製造方法、並びにイオン注入マスクを用いた炭化珪素半導体装置およびその製造方法 |
US7304334B2 (en) * | 2005-09-16 | 2007-12-04 | Cree, Inc. | Silicon carbide bipolar junction transistors having epitaxial base regions and multilayer emitters and methods of fabricating the same |
US8198712B2 (en) * | 2006-06-07 | 2012-06-12 | International Rectifier Corporation | Hermetically sealed semiconductor device module |
US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
KR101529331B1 (ko) | 2006-08-17 | 2015-06-16 | 크리 인코포레이티드 | 고전력 절연 게이트 바이폴라 트랜지스터 |
US8138583B2 (en) * | 2007-02-16 | 2012-03-20 | Cree, Inc. | Diode having reduced on-resistance and associated method of manufacture |
US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
US8866150B2 (en) * | 2007-05-31 | 2014-10-21 | Cree, Inc. | Silicon carbide power devices including P-type epitaxial layers and direct ohmic contacts |
JP5140347B2 (ja) * | 2007-08-29 | 2013-02-06 | 株式会社日立製作所 | バイポーラトランジスタ及びその製造方法 |
TWI362769B (en) | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US7800196B2 (en) * | 2008-09-30 | 2010-09-21 | Northrop Grumman Systems Corporation | Semiconductor structure with an electric field stop layer for improved edge termination capability |
US8294507B2 (en) * | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
US8193848B2 (en) | 2009-06-02 | 2012-06-05 | Cree, Inc. | Power switching devices having controllable surge current capabilities |
US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
US8541787B2 (en) | 2009-07-15 | 2013-09-24 | Cree, Inc. | High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability |
US8354690B2 (en) | 2009-08-31 | 2013-01-15 | Cree, Inc. | Solid-state pinch off thyristor circuits |
US20120003812A1 (en) * | 2009-11-24 | 2012-01-05 | Sumitomo Electric Industries, Ltd. | Method of manufacturing semiconductor substrate |
US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9171977B2 (en) | 2011-06-17 | 2015-10-27 | Cree, Inc. | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
WO2013036370A1 (en) | 2011-09-11 | 2013-03-14 | Cree, Inc. | High current density power module comprising transistors with improved layout |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
RU2529054C1 (ru) * | 2013-06-19 | 2014-09-27 | Общество с ограниченной ответственностью "АПСТЕК Рашен Девелопмент" | Полупроводниковый детектор для регистрации сопутствующих нейтронам заряженных частиц в нейтронном генераторе со статическим вакуумом |
US9401708B2 (en) | 2014-05-20 | 2016-07-26 | General Electric Company | Gate drive unit and method for controlling a gate drive unit |
US9732437B2 (en) * | 2014-09-09 | 2017-08-15 | Toyota Jidosha Kabushiki Kaisha | SiC single crystal and method for producing same |
CN108878523B (zh) * | 2018-07-11 | 2021-06-15 | 北京优捷敏半导体技术有限公司 | 一种碳化硅门极可关断晶闸管及其制造方法 |
CN114361287B (zh) * | 2022-01-04 | 2024-02-23 | 中国工程物理研究院流体物理研究所 | 一种用于高温环境的硅基光触发多门极半导体开关芯片 |
PL442428A1 (pl) | 2022-09-30 | 2024-04-02 | Instytut Wysokich Ciśnień Polskiej Akademii Nauk | Tyrystor przełączany światłem i sposób wytwarzania takiego tyrystora |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3312880A (en) * | 1962-12-12 | 1967-04-04 | Sylvania Electric Prod | Four-layer semiconductor switching device having turn-on and turn-off gain |
US4032364A (en) * | 1975-02-28 | 1977-06-28 | General Electric Company | Deep diode silicon controlled rectifier |
US3980420A (en) * | 1975-07-03 | 1976-09-14 | Emerson Electric Co. | Burner control system for domestic gas range ovens |
KR910006249B1 (ko) * | 1983-04-01 | 1991-08-17 | 가부시기가이샤 히다찌세이사꾸쇼 | 반도체 장치 |
CH668505A5 (de) * | 1985-03-20 | 1988-12-30 | Bbc Brown Boveri & Cie | Halbleiterbauelement. |
IT1222712B (it) * | 1986-10-15 | 1990-09-12 | Man Nutzfahrzeuge Gmbh | Dispositivo per elimentare nerofumo dai gas di scarico di un motore endotermico,specialmente da un motore diesel |
JPS63278274A (ja) * | 1987-03-18 | 1988-11-15 | Sanyo Electric Co Ltd | 半導体装置 |
JPH0642546B2 (ja) * | 1987-05-08 | 1994-06-01 | シャープ株式会社 | Mos型半導体装置 |
JPS63278275A (ja) * | 1987-05-08 | 1988-11-15 | Seiko Instr & Electronics Ltd | 半導体不揮発性メモリ |
US4945394A (en) * | 1987-10-26 | 1990-07-31 | North Carolina State University | Bipolar junction transistor on silicon carbide |
US5202750A (en) * | 1990-04-09 | 1993-04-13 | U.S. Philips Corp. | MOS-gated thyristor |
GB2245420A (en) * | 1990-06-20 | 1992-01-02 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
US5264713A (en) * | 1991-06-14 | 1993-11-23 | Cree Research, Inc. | Junction field-effect transistor formed in silicon carbide |
JP3150376B2 (ja) * | 1991-09-30 | 2001-03-26 | ローム株式会社 | ヘテロ接合バイポーラトランジスタの製法 |
US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
US5233215A (en) * | 1992-06-08 | 1993-08-03 | North Carolina State University At Raleigh | Silicon carbide power MOSFET with floating field ring and floating field plate |
-
1993
- 1993-08-09 US US08/103,866 patent/US5539217A/en not_active Expired - Lifetime
-
1994
- 1994-08-05 WO PCT/US1994/008990 patent/WO1995005006A1/en not_active Application Discontinuation
- 1994-08-05 EP EP94929093A patent/EP0713610A1/en not_active Ceased
- 1994-08-05 AU AU78275/94A patent/AU7827594A/en not_active Abandoned
- 1994-08-05 JP JP50658295A patent/JP3751976B2/ja not_active Expired - Lifetime
- 1994-08-05 KR KR1019960700652A patent/KR100284750B1/ko not_active IP Right Cessation
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004153189A (ja) * | 2002-11-01 | 2004-05-27 | Furukawa Electric Co Ltd:The | GaN系III−V族窒化物半導体スイッチング素子 |
JP4629955B2 (ja) * | 2002-11-01 | 2011-02-09 | 古河電気工業株式会社 | GaN系III−V族窒化物半導体スイッチング素子 |
JP2008306193A (ja) * | 2003-08-22 | 2008-12-18 | Kansai Electric Power Co Inc:The | 半導体装置の製造方法 |
JP2008546172A (ja) * | 2005-05-18 | 2008-12-18 | クリー インコーポレイテッド | 双方向阻止能力を有する高電圧炭化珪素デバイス及びその作製方法 |
WO2008044801A1 (fr) * | 2006-10-13 | 2008-04-17 | Sanyo Electric Co., Ltd. | Dispositif semiconducteur et procédé de fabrication de celui-ci |
JPWO2008044801A1 (ja) * | 2006-10-13 | 2010-02-18 | 三洋電機株式会社 | 半導体装置及びその製造方法 |
JP2010062252A (ja) * | 2008-09-02 | 2010-03-18 | Kansai Electric Power Co Inc:The | バイポーラ型半導体装置 |
JP2010135789A (ja) * | 2008-12-01 | 2010-06-17 | Cree Inc | 低角度オフカット炭化ケイ素結晶上の安定なパワーデバイス |
US8497552B2 (en) | 2008-12-01 | 2013-07-30 | Cree, Inc. | Semiconductor devices with current shifting regions and related methods |
US8536582B2 (en) | 2008-12-01 | 2013-09-17 | Cree, Inc. | Stable power devices on low-angle off-cut silicon carbide crystals |
JP2013536576A (ja) * | 2010-07-26 | 2013-09-19 | クリー インコーポレイテッド | 表面パッシベーションのための半導体レッジ層を有する電子デバイス構造 |
Also Published As
Publication number | Publication date |
---|---|
AU7827594A (en) | 1995-02-28 |
EP0713610A1 (en) | 1996-05-29 |
KR100284750B1 (ko) | 2001-04-02 |
JP3751976B2 (ja) | 2006-03-08 |
US5539217A (en) | 1996-07-23 |
WO1995005006A1 (en) | 1995-02-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH09501270A (ja) | 炭化ケイ素サイリスタ | |
KR100271106B1 (ko) | 실리콘 카바이드로 형성된 파워 mosfet(power mosfet in silicon carbide) | |
US9142662B2 (en) | Field effect transistor devices with low source resistance | |
Ryu et al. | 3100 V, asymmetrical, gate turn-off (GTO) thyristors in 4H-SiC | |
EP2264769B1 (en) | Silicon carbide horizontal channel buffered gate semiconductor devices | |
KR20110134486A (ko) | 실리콘 카바이드 바이폴라 접합 트랜지스터 | |
Shekar et al. | Characteristics of the emitter-switched thyristor | |
JP2005303027A (ja) | 半導体装置 | |
JP4680330B2 (ja) | シリコン・カーバイド・フィールド制御型バイポーラ・スイッチ | |
US5331184A (en) | Insulated gate bipolar transistor having high breakdown voltage | |
US9029945B2 (en) | Field effect transistor devices with low source resistance | |
JP3906052B2 (ja) | 絶縁ゲート型半導体装置 | |
KR890013793A (ko) | 고전력 gto 싸이리스터 및 그 제조방법 | |
JPH06112494A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
Chow et al. | Recent advances in high-voltage SiC power devices | |
JPH08316470A (ja) | 電力用半導体素子 | |
EP0107773A1 (en) | Thyristor with turn-off capability | |
JPH08241993A (ja) | パワースイッチングデバイス | |
US11990543B2 (en) | Power transistor with soft recovery body diode | |
Zhang et al. | Design and optimization of cell and field limiting ring termination for 1200 V 4H-SiC Junction Barrier Schottky (JBS) Diodes | |
JPS5912025B2 (ja) | サイリスタ | |
Shekar et al. | An emitter switched thyristor with base resistance control | |
JPH06177404A (ja) | 半導体ダイオード | |
Edmond et al. | Silicon carbide thyristor | |
SU736807A1 (ru) | Транзистор |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20040407 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20040910 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040917 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20041006 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20051012 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20051209 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20091216 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101216 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101216 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111216 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111216 Year of fee payment: 6 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121216 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121216 Year of fee payment: 7 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131216 Year of fee payment: 8 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |