JP2010135789A - 低角度オフカット炭化ケイ素結晶上の安定なパワーデバイス - Google Patents
低角度オフカット炭化ケイ素結晶上の安定なパワーデバイス Download PDFInfo
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- 239000013078 crystal Substances 0.000 title abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 8
- 229910052710 silicon Inorganic materials 0.000 title description 6
- 239000010703 silicon Substances 0.000 title description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 128
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- 238000000034 method Methods 0.000 claims abstract description 44
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 13
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Abstract
【解決手段】炭化ケイ素ベースのパワーデバイスが、<0001>方向に対して8°よりも小さいオフアクシス角を形成する平坦な表面を有する炭化ケイ素ドリフト層を含む。
【選択図】図4
Description
最も基本的なレベルでは、構造上の結晶学的欠陥は4つのカテゴリ、すなわち点欠陥、線欠陥、面欠陥、および3次元欠陥に分類することができる。点欠陥は空格子点を含み、線欠陥は転位を含み、面欠陥は積層欠陥を含み、3次元欠陥はポリタイプインクルージョンを含む。
炭化ケイ素パワーデバイスでは、このような比較的低エネルギーの中間状態によって欠陥の成長の継続が促進されるであろうが、これは、デバイスの動作によって、転位移動を促進するために必要となるであろう比較的小さいエネルギー量が提供されるからである。
Claims (15)
- 炭化ケイ素ベースのパワーデバイスであって、
<0001>方向に対して0°よりも大きく8°よりも小さいオフアクシス角を形成する平坦な表面を有する炭化ケイ素ドリフト層を備えたことを特徴とするパワーデバイス。 - 前記<0001>方向に対する前記オフアクシス角は約4°以下であることを特徴とする、請求項1に記載の炭化ケイ素ベースのパワーデバイス。
- 前記<0001>方向に対する前記オフアクシス角は約2°と約4°との間にあることを特徴とする、請求項1に記載の炭化ケイ素ベースのパワーデバイス。
- 前記<0001>方向に対して0°よりも大きく8°よりも小さいオフアクシス角を形成する平坦な表面を有する炭化ケイ素基板をさらに備え、
前記炭化ケイ素ドリフト層は前記炭化ケイ素基板の前記平坦な表面上にエピタキシャル層を含むことを特徴とする、請求項1に記載の炭化ケイ素ベースのパワーデバイス。 - 前記炭化ケイ素基板と前記炭化ケイ素ドリフト層との間に炭化ケイ素緩衝層をさらに備え、
前記炭化ケイ素緩衝層は少なくとも約10μmの厚さを有することを特徴とする請求項6に記載の炭化ケイ素ベースのパワーデバイス。 - 前記炭化ケイ素バッファー層は約10μmと約25μmとの間の厚さを有することを特徴とする、請求項7に記載の炭化ケイ素ベースのパワーデバイス。
- 前記バッファー層は前記基板と反対側の表面で約10/cm2未満の底面転位密度を有することを特徴とする、請求項8に記載の炭化ケイ素ベースのパワーデバイス。
- 前記バッファー層は前記基板と反対側の前記表面で約2/cm2未満の底面転位密度を有することを特徴とする、請求項8に記載の炭化ケイ素ベースのパワーデバイス。
- 前記バッファー層は前記基板と反対側の前記表面で約1/cm2未満の底面転位密度を有することを特徴とする、請求項8に記載の炭化ケイ素ベースのパワーデバイス。
- 前記炭化ケイ素バッファー層は前記基板の炭素面上にあることを特徴とする、請求項7に記載の炭化ケイ素ベースのパワーデバイス。
- 前記炭化ケイ素ドリフト層は第1の導電性タイプを有し、
前記炭化ケイ素ベースのパワーデバイスは、前記第1の導電性タイプと反対の第2の導電性タイプを有する炭化ケイ素基板と、前記基板上の炭化ケイ素バッファー層とを含むゲートターンオフサイリスタを備え、
前記ドリフト層は前記バッファー層上にあり、
第1のエピタキシャル層は前記ドリフト層上にありかつ前記第2の導電性タイプを有し、
第2のエピタキシャル層は前記第1のエピタキシャル層上にありかつ前記第1の導電性タイプを有し、
ゲートコンタクトは前記第1のエピタキシャル層上にあり、
カソードコンタクトは前記第2のエピタキシャル層上にあり、
アノードコンタクトは前記基板上にあることを特徴とする、請求項1に記載の炭化ケイ素ベースのパワーデバイス。 - 前記<0001>方向に対する前記オフアクシス角は約4°であり、40時間の順方向電流の通電の後100mV未満の順電圧ドリフトを有することを特徴とする、請求項13に記載の炭化ケイ素ベースのパワーデバイス。
- 炭化ケイ素ベースのパワーデバイスを形成する方法であって、
<0001>方向に対して8°よりも小さいオフアクシス角を形成する平坦な表面を有する炭化ケイ素ドリフト層を形成するステップを備えたことを特徴とする方法。
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