JP2008042208A5 - - Google Patents

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JP2008042208A5
JP2008042208A5 JP2007203606A JP2007203606A JP2008042208A5 JP 2008042208 A5 JP2008042208 A5 JP 2008042208A5 JP 2007203606 A JP2007203606 A JP 2007203606A JP 2007203606 A JP2007203606 A JP 2007203606A JP 2008042208 A5 JP2008042208 A5 JP 2008042208A5
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Prior art keywords
silicon carbide
carbide film
reaction space
inert gas
forming
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JP2007203606A
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Japanese (ja)
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JP2008042208A (ja
JP5268130B2 (ja
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Priority claimed from US11/463,247 external-priority patent/US8080282B2/en
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JP2007203606A 2006-08-08 2007-08-03 酸素含有炭化ケイ素膜を形成するための方法 Active JP5268130B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/463,247 2006-08-08
US11/463,247 US8080282B2 (en) 2006-08-08 2006-08-08 Method for forming silicon carbide film containing oxygen

Publications (3)

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JP2008042208A JP2008042208A (ja) 2008-02-21
JP2008042208A5 true JP2008042208A5 (zh) 2010-09-02
JP5268130B2 JP5268130B2 (ja) 2013-08-21

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JP2007203606A Active JP5268130B2 (ja) 2006-08-08 2007-08-03 酸素含有炭化ケイ素膜を形成するための方法

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US (1) US8080282B2 (zh)
JP (1) JP5268130B2 (zh)

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