JP2008010876A - フィンfetデバイスの構造およびその製造方法 - Google Patents
フィンfetデバイスの構造およびその製造方法 Download PDFInfo
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
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- 229910052814 silicon oxide Inorganic materials 0.000 description 15
- 239000011241 protective layer Substances 0.000 description 12
- 238000001020 plasma etching Methods 0.000 description 10
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- 230000008021 deposition Effects 0.000 description 7
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- 239000013078 crystal Substances 0.000 description 3
- 229910021332 silicide Inorganic materials 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- -1 ion ions Chemical class 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
【解決手段】バルク・シリコン基板の上面にシリコンのフィンを形成するステップと、前記フィンの両側の側壁にゲート誘電体を形成するステップと、前記フィンの前記両側の側壁上の前記ゲート誘電体層と直接に物理的にコンタクトするようなゲート電極を形成するステップと、前記チャネル領域の第1の側の前記フィン中に第1のソース/ドレインを形成し、かつ前記チャネル領域の第2の側の前記フィン中に第2のソース/ドレインを形成するステップと、ボイドを生じるために、前記第1および第2のソース/ドレインの少なくとも一部の下方から前記バルク・シリコン基板の一部を除去するステップと、前記ボイドを誘電体材料で以って充填するステップとを含む方法である。構造は、フィンFETのシリコン・ボディとバルク・シリコン基板との間にボディ・コンタクトを含む。
【選択図】なし
Description
前記フィンの両側の側壁にゲート誘電体を形成するステップと、前記フィンのチャネル領域の上方のゲート電極であって、前記ゲート電極が前記フィンの前記両側の側壁上の前記ゲート誘電体層と直接に物理的にコンタクトするような前記ゲート電極を形成するステップと、前記チャネル領域の第1の側の前記フィン中に第1のソース/ドレインを形成し、かつ前記チャネル領域の第2の側の前記フィン中に第2のソース/ドレインを形成するステップと、ボイドを生じるために、前記第1および第2のソース/ドレインの少なくとも一部の下方から前記バルク・シリコン基板の一部を除去するステップと、前記ボイドを誘電体材料で以って充填するステップとを含む方法である。
(1)第1の保護層165であるブランケット層を形成するために窒化シリコンのブランケットCVD付着を行い、
(2)第1の保護層165であるブランケット層の上方に第2の保護層170であるブランケット層を形成するためにCVD酸化物(前述)のブランケット付着を行い、
(3)キャッピング層160を露出するためにCVD酸化物のCMPを行い、
(4)キャッピング層160の上面の下方のCVD酸化物を凹ませるようにRIE凹部エッチングを行い、
(5)スペーサ175を形成するためにブランケットCVD窒化シリコン付着を行い、次いでスペーサRIEを行い、そして
(6)スペーサ175によって保護されない全てのCVD酸化物を除去するためにRIEを行う。
105 パッド酸化シリコン層
110 パッド窒化シリコン層
115 STI
120 ライナー
125 エッチング・ストップ層
130 マンドレル層
135 トレンチ
140 フィン
145 キャップ
145A キャッピング層
150 ゲート誘電体層
155 ゲート
160 キャッピング層
165 第1の保護層
170 第2の保護層
175 スペーサ
180 ソース/ドレイン
185 チャネル領域
190 トレンチ
190A トレンチ
195 ペデスタル
200 エッジ
205 誘電体
Claims (9)
- バルク・シリコン基板上に形成されたシリコン・ボディを有するフィンFET(電界効果型トランジスタ)と、
前記シリコン・ボディと前記バルク・シリコン基板との間のボディ・コンタクトと、
前記シリコン・ボディ中に形成され、かつ前記フィンFETの下方の誘電体層によって前記バルク・シリコン基板から絶縁された第1および第2のソース/ドレインと
を含む構造。 - 前記フィンFETの、前記第1および第2のソース/ドレイン間にあり、かつ前記フィンFETのゲート電極の下方にあるチャネル領域にコンタクトする、前記バルク・シリコン基板のペデスタルを前記ボディ・コンタクトが含む
請求項1に記載の構造。 - バルク・シリコン基板の上面に平行な第1の方向に延びる単結晶シリコンのフィンであって、第1および第2のソース/ドレイン間のチャネル領域を有する前記フィンと、
前記バルク・シリコン基板の前記上面に平行で前記第1の方向とは異なる第2の方向に延び、かつ前記チャネル領域の上方で交叉する導電性のゲート電極と、
前記ゲート電極および前記フィン間のゲート誘電体と、
前記バルク・シリコン基板と直接に物理的および電気的にコンタクトする、前記フィンの前記チャネル領域の少なくとも一部と、
前記第1のソース/ドレインの少なくとも一部と前記バルク・シリコン基板との間、および前記第2のソース/ドレインの少なくとも一部と前記バルク・シリコン基板との間の誘電体層と
を含む構造。 - 前記誘電体層中にボイドを更に含む、
請求項3に記載の構造。 - バルク・シリコン基板の上面にシリコンのフィンを形成するステップと、
前記フィンの両側の側壁にゲート誘電体層を形成するステップと、
前記フィンのチャネル領域の上方のゲート電極であって、前記ゲート電極が前記フィンの前記両側の側壁上の前記ゲート誘電体層と直接に物理的にコンタクトするような前記ゲート電極を形成するステップと、
前記チャネル領域の第1の側の前記フィン中に第1のソース/ドレインを形成し、かつ前記チャネル領域の第2の側の前記フィン中に第2のソース/ドレインを形成するステップと、
ボイドを生じるために、前記第1および第2のソース/ドレインの少なくとも一部の下方から前記バルク・シリコン基板の一部を除去するステップと、
前記ボイドを誘電体材料で以って充填するステップと
を含む方法。 - 前記バルク・シリコン基板の前記一部を除去する前記ステップが、
前記フィンの両側の前記バルク・シリコン基板の中ではあるが、前記ゲート電極の下方ではないところにトレンチを形成するように第1のエッチングを行うステップと、
前記トレンチの両側を横方向にエッチングすることによって前記フィンをアンダーカットするように第2のエッチングを行うステップと
を含む、請求項5に記載の方法。 - 前記第2のエッチングが、前記第2のエッチングにより露出された前記フィンの領域で前記フィンの前記底面から層を除去する、
請求項6に記載の方法。 - 前記シリコンのフィンを形成するステップが、
前記バルク・シリコン基板の前記上面にマンドレル層を形成するステップと、
前記バルク・シリコン基板の上面がトレンチの上部で露出された状態で、前記マンドレル層の中に前記トレンチをエッチングするステップと、
前記トレンチをシリコンで以って充填するステップと
を含む、請求項5に記載の方法。 - 前記ボイドがチャネル領域の一部の下方に延びる、
請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/427,486 US7517764B2 (en) | 2006-06-29 | 2006-06-29 | Bulk FinFET device |
US11/427,486 | 2006-06-29 |
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JP2013025314A Division JP5648933B2 (ja) | 2006-06-29 | 2013-02-13 | フィンfetデバイスの構造およびその製造方法 |
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JP2008010876A true JP2008010876A (ja) | 2008-01-17 |
JP5259990B2 JP5259990B2 (ja) | 2013-08-07 |
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JP2007168478A Expired - Fee Related JP5259990B2 (ja) | 2006-06-29 | 2007-06-27 | フィンfetデバイスの構造およびその製造方法 |
JP2013025314A Active JP5648933B2 (ja) | 2006-06-29 | 2013-02-13 | フィンfetデバイスの構造およびその製造方法 |
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JP2013025314A Active JP5648933B2 (ja) | 2006-06-29 | 2013-02-13 | フィンfetデバイスの構造およびその製造方法 |
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US (4) | US7517764B2 (ja) |
JP (2) | JP5259990B2 (ja) |
CN (1) | CN101097956B (ja) |
TW (1) | TWI399856B (ja) |
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CN101097956A (zh) | 2008-01-02 |
JP5648933B2 (ja) | 2015-01-07 |
US20080001187A1 (en) | 2008-01-03 |
CN101097956B (zh) | 2012-06-27 |
US7863122B2 (en) | 2011-01-04 |
TW200807717A (en) | 2008-02-01 |
JP2013123077A (ja) | 2013-06-20 |
US7517764B2 (en) | 2009-04-14 |
US20080142891A1 (en) | 2008-06-19 |
US20080042219A1 (en) | 2008-02-21 |
US20080233699A1 (en) | 2008-09-25 |
JP5259990B2 (ja) | 2013-08-07 |
TWI399856B (zh) | 2013-06-21 |
US7667248B2 (en) | 2010-02-23 |
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