JP2007158237A - 積層型半導体装置 - Google Patents
積層型半導体装置 Download PDFInfo
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- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
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- Condensed Matter Physics & Semiconductors (AREA)
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
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Abstract
【解決手段】接合不良救済手段として、信号経路を多重化した並列配置方式と、信号経路を予備の信号経路に切り換える接合不良救済回路を備える。信号数が少なくシリアルデータ伝送で超高速動作が要求される場合には並列配置方式を使用する。パラレルデータ伝送で信号数の多く場合には接合不良救済回路を使用する。このように1つの積層型半導体装置において複数の接合不良救済手段を使用することで最適な救済効率が得られる。
【選択図】 図5
Description
11 チップ間接合部
12 貫通電極
13 接合不良救済回路
14 内部信号生成回路
15 内部信号入出力回路
16 外部入出力回路
22、23、24、25 接合不良
30 インターポーザー上金属配線
50 通常使用貫通電極
51 予備貫通電極
61 切り換えスイッチ
62 置換制御回路
100 インターポーザー
101a、101b、101c コアチップ
102 インターフェースチップ
103 外部端子
a 外部出力信号
b、c、d 内部信号
Claims (13)
- コアチップとインターフェースチップとインターポーザーとを備えた積層型半導体装置において、前記コアチップを貫通する貫通電極と前記貫通電極間を接合したチップ間接合部から構成された信号経路に対して救済用の予備信号経路を備えた接合不良救済手段を備えたことを特徴とする積層型半導体装置。
- 前記接合不良救済手段は、前記信号経路の1本に対し前記予備信号経路を1本配置した並行配置方式であることを特徴とする請求項1に記載の積層型半導体装置。
- 前記並列配置方式は、外部から入力される信号に対し適用されたことを特徴とする請求項2に記載の積層型半導体装置。
- 前記並列配置方式は、外部端子と前記インターフェースチップとの間においてシリアルデータ伝送される信号に対し適用されたことを特徴とする請求項2に記載の積層型半導体装置。
- 前記接合不良救済手段は、前記信号経路のn(nは1以上の整数)本に対し前記予備信号経路を1本配置し、接合不良救済回路により切り換える接合不良救済回路方式であることを特徴とする請求項1に記載の積層型半導体装置。
- 前記接合不良救済回路は、前記コアチップに搭載されたことを特徴とする請求項5に記載の積層型半導体装置。
- 前記接合不良救済回路は、接合欠陥個所を記憶させておくラッチ回路と、切り換えスイッチ及び制御回路とを備えたことを特徴とする請求項6に記載の積層型半導体装置。
- 前記接合不良救済回路方式は、信号本数の多い前記インターフェースチップと前記コアチップとの間における信号に対し適用されたことを特徴とする請求項7に記載の積層型半導体装置。
- 前記接合不良救済回路方式は、前記インターフェースチップと前記コアチップとの間において、外部とやり取りされる信号をパラレル変換された信号に対し適用されたことを特徴とする請求項7に記載の積層型半導体装置。
- 前記積層型半導体装置において、前記信号経路に対し異なる接合不良救済手段が使用されたことを特徴とする請求項1に記載の積層型半導体装置。
- 前記接合不良救済手段として、外部端子との入出力回路との信号経路には並列配置方式が使用され、前記コアチップとの入出力回路との信号経路には接合不良救済回路が使用されたことを特徴とする請求項10に記載の積層型半導体装置。
- 前記コアチップにはDRAMのメモリセルとその周辺回路が搭載され、前記インターフェースチップには外部端子との外部入出力回路と前記コアチップとの内部信号入出力回路が搭載され、前記接合不良救済手段として前記外部入出力回路との信号経路には並列配置方式が使用され、前記内部信号入出力回路との信号経路には接合不良救済回路が使用されたことを特徴とする請求項10に記載の積層型半導体装置。
- 前記積層型半導体装置はバースト長2以上のデータ信号で入出力されるDDR型のDRAMであることを特徴とする請求項12に記載の積層型半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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JP2005354807A JP4708176B2 (ja) | 2005-12-08 | 2005-12-08 | 半導体装置 |
US11/635,500 US7489030B2 (en) | 2005-12-08 | 2006-12-08 | Stacked semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2005354807A JP4708176B2 (ja) | 2005-12-08 | 2005-12-08 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2007158237A true JP2007158237A (ja) | 2007-06-21 |
JP4708176B2 JP4708176B2 (ja) | 2011-06-22 |
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JP2005354807A Expired - Fee Related JP4708176B2 (ja) | 2005-12-08 | 2005-12-08 | 半導体装置 |
Country Status (2)
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US (1) | US7489030B2 (ja) |
JP (1) | JP4708176B2 (ja) |
Cited By (34)
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JP2010161918A (ja) * | 2009-01-06 | 2010-07-22 | O2 Micro Inc | 電池管理システム |
JP2011503759A (ja) * | 2007-10-16 | 2011-01-27 | マイクロン テクノロジー, インク. | 積み重ねられた半導体素子用の再構成可能な接続部 |
JP2011081882A (ja) * | 2009-10-09 | 2011-04-21 | Elpida Memory Inc | 積層型半導体装置 |
JP2011081883A (ja) * | 2009-10-09 | 2011-04-21 | Elpida Memory Inc | 半導体装置及びこれを備える情報処理システム |
JP2011081886A (ja) * | 2009-10-09 | 2011-04-21 | Elpida Memory Inc | 半導体装置 |
JP2011081887A (ja) * | 2009-10-09 | 2011-04-21 | Elpida Memory Inc | 半導体装置 |
JP2012078332A (ja) * | 2009-10-09 | 2012-04-19 | Elpida Memory Inc | 半導体装置、半導体装置の試験方法、及びデータ処理システム。 |
US8184463B2 (en) | 2008-12-18 | 2012-05-22 | Hitachi, Ltd. | Semiconductor apparatus |
JP2012134380A (ja) * | 2010-12-22 | 2012-07-12 | Hitachi Ltd | 半導体装置 |
US8227944B2 (en) | 2009-01-06 | 2012-07-24 | O2Micro Inc | Vertical bus circuits |
US8242589B2 (en) | 2009-02-27 | 2012-08-14 | Hitachi, Ltd. | Semiconductor device |
JP2012155815A (ja) * | 2011-01-28 | 2012-08-16 | Elpida Memory Inc | 半導体装置 |
JP2012160246A (ja) * | 2011-01-31 | 2012-08-23 | Sk Hynix Inc | 半導体メモリ装置及びそのリペア方法 |
US8261129B2 (en) | 2010-08-31 | 2012-09-04 | O2Micro International Ltd. | Flexible bus architecture for monitoring and control of battery pack |
WO2012140810A1 (ja) * | 2011-04-13 | 2012-10-18 | パナソニック株式会社 | チップ接合部分の冗長救済構造を有する三次元集積回路 |
JP2012527130A (ja) * | 2009-05-20 | 2012-11-01 | クアルコム,インコーポレイテッド | シリコン貫通ビア(tsv)冗長性を設けるための方法および装置 |
US8346977B2 (en) | 2010-05-20 | 2013-01-01 | O2Micro International Limited | Device address assignment in a bus cascade system |
EP2546873A2 (en) | 2011-06-14 | 2013-01-16 | Elpida Memory, Inc. | Semiconductor device |
US8441135B2 (en) | 2009-10-09 | 2013-05-14 | Elpida Memory, Inc. | Semiconductor device |
US8525477B2 (en) | 2010-07-15 | 2013-09-03 | O2Micro, Inc. | Assigning addresses to multiple cascade battery modules in electric or electric hybrid vehicles |
US8693277B2 (en) | 2011-01-14 | 2014-04-08 | Elpida Memory, Inc. | Semiconductor device including plural chips stacked to each other |
US8737160B2 (en) | 2010-11-04 | 2014-05-27 | Junichi Hayashi | Semiconductor device |
JP2014107308A (ja) * | 2012-11-22 | 2014-06-09 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2014142991A (ja) * | 2014-02-26 | 2014-08-07 | Ps4 Luxco S A R L | 半導体装置 |
JP2014179617A (ja) * | 2013-03-14 | 2014-09-25 | Intel Mobile Communications GmbH | チップ装置 |
TWI456706B (zh) * | 2012-10-24 | 2014-10-11 | Univ Nat Changhua Education | 矽穿孔自我繞線電路及其繞線方法 |
WO2014196410A1 (ja) * | 2013-06-05 | 2014-12-11 | ピーエスフォー ルクスコ エスエイアールエル | 半導体装置 |
JP2015032811A (ja) * | 2013-08-07 | 2015-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
KR101543702B1 (ko) | 2014-02-19 | 2015-08-11 | 연세대학교 산학협력단 | 반도체 장치 및 이의 테스트 방법 |
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