JP2007053376A5 - - Google Patents

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Publication number
JP2007053376A5
JP2007053376A5 JP2006221375A JP2006221375A JP2007053376A5 JP 2007053376 A5 JP2007053376 A5 JP 2007053376A5 JP 2006221375 A JP2006221375 A JP 2006221375A JP 2006221375 A JP2006221375 A JP 2006221375A JP 2007053376 A5 JP2007053376 A5 JP 2007053376A5
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JP
Japan
Prior art keywords
tunnel junction
dopants
type
material layer
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006221375A
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English (en)
Japanese (ja)
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JP2007053376A (ja
JP5143384B2 (ja
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Publication date
Priority claimed from US11/203,917 external-priority patent/US7473941B2/en
Application filed filed Critical
Publication of JP2007053376A publication Critical patent/JP2007053376A/ja
Publication of JP2007053376A5 publication Critical patent/JP2007053376A5/ja
Application granted granted Critical
Publication of JP5143384B2 publication Critical patent/JP5143384B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006221375A 2005-08-15 2006-08-15 半導体素子の作動電圧を低下させるための構造 Expired - Fee Related JP5143384B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/203917 2005-08-15
US11/203,917 US7473941B2 (en) 2005-08-15 2005-08-15 Structures for reducing operating voltage in a semiconductor device

Publications (3)

Publication Number Publication Date
JP2007053376A JP2007053376A (ja) 2007-03-01
JP2007053376A5 true JP2007053376A5 (enExample) 2009-09-17
JP5143384B2 JP5143384B2 (ja) 2013-02-13

Family

ID=37398551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006221375A Expired - Fee Related JP5143384B2 (ja) 2005-08-15 2006-08-15 半導体素子の作動電圧を低下させるための構造

Country Status (7)

Country Link
US (1) US7473941B2 (enExample)
EP (1) EP1755173B1 (enExample)
JP (1) JP5143384B2 (enExample)
KR (1) KR101242933B1 (enExample)
CN (1) CN1917241B (enExample)
DE (1) DE602006004119D1 (enExample)
TW (1) TWI339447B (enExample)

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US20070227588A1 (en) * 2006-02-15 2007-10-04 The Regents Of The University Of California Enhanced tunnel junction for improved performance in cascaded solar cells
KR100809243B1 (ko) * 2006-04-27 2008-02-29 삼성전기주식회사 질화물막 제조방법 및 질화물 구조
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007003991A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einem Tunnelübergang
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP5148885B2 (ja) * 2007-01-30 2013-02-20 シャープ株式会社 窒化物半導体発光素子
TW200905928A (en) * 2007-03-29 2009-02-01 Univ California Dual surface-roughened N-face high-brightness LED
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
WO2009009111A2 (en) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY
DE102008028036A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
IL225872A (en) * 2013-04-22 2015-03-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Photo detector semi-conductor with barrier
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
EP3761375A1 (en) 2014-02-05 2021-01-06 Array Photonics, Inc. Monolithic multijunction power converter
JP6462456B2 (ja) * 2015-03-31 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
JP6708442B2 (ja) * 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
TWI617048B (zh) * 2016-06-29 2018-03-01 光鋐科技股份有限公司 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
CN107482091B (zh) 2017-07-25 2019-10-22 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法
WO2019067553A1 (en) 2017-09-27 2019-04-04 Solar Junction Corporation SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER
JP6964875B2 (ja) * 2017-11-10 2021-11-10 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
EP3939085A1 (en) 2019-03-11 2022-01-19 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
KR102253285B1 (ko) * 2019-10-10 2021-05-18 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법
JP7481618B2 (ja) 2020-03-30 2024-05-13 日亜化学工業株式会社 窒化物半導体素子の製造方法
CN112103352B (zh) * 2020-09-18 2022-02-01 苏州长光华芯光电技术股份有限公司 一种半导体器件及其制造方法
WO2024237161A1 (ja) * 2023-05-12 2024-11-21 住友電気工業株式会社 半導体積層体および光半導体素子

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US4223336A (en) * 1978-03-14 1980-09-16 Microwave Semiconductor Corp. Low resistivity ohmic contacts for compound semiconductor devices
JPH01194379A (ja) 1988-01-29 1989-08-04 Toshiba Corp 可視光発光素子
JP3504976B2 (ja) 1994-08-26 2004-03-08 ローム株式会社 半導体発光素子
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US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
DE10329079B4 (de) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
JP2005123476A (ja) 2003-10-17 2005-05-12 Sharp Corp 半導体レーザ素子とその製造方法
KR20050093319A (ko) * 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법

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