JP2009060078A5 - - Google Patents
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- Publication number
- JP2009060078A5 JP2009060078A5 JP2008110540A JP2008110540A JP2009060078A5 JP 2009060078 A5 JP2009060078 A5 JP 2009060078A5 JP 2008110540 A JP2008110540 A JP 2008110540A JP 2008110540 A JP2008110540 A JP 2008110540A JP 2009060078 A5 JP2009060078 A5 JP 2009060078A5
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- semiconductor layer
- conductivity type
- layer
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 309
- 150000001875 compounds Chemical class 0.000 claims 285
- 239000012535 impurity Substances 0.000 claims 86
- 238000006467 substitution reaction Methods 0.000 claims 56
- 230000000903 blocking effect Effects 0.000 claims 33
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052799 carbon Inorganic materials 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000011777 magnesium Substances 0.000 claims 4
- 239000011572 manganese Substances 0.000 claims 4
- 239000011669 selenium Substances 0.000 claims 4
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 229910052790 beryllium Inorganic materials 0.000 claims 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052749 magnesium Inorganic materials 0.000 claims 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052711 selenium Inorganic materials 0.000 claims 2
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 2
- 229910052714 tellurium Inorganic materials 0.000 claims 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008110540A JP5223439B2 (ja) | 2007-05-28 | 2008-04-21 | 半導体発光素子 |
| KR1020097009308A KR20100014237A (ko) | 2007-05-28 | 2008-05-20 | 반도체 발광소자 |
| PCT/JP2008/059195 WO2008146651A1 (ja) | 2007-05-28 | 2008-05-20 | 半導体発光素子 |
| TW097118527A TWI394336B (zh) | 2007-05-28 | 2008-05-20 | Semiconductor light emitting element |
| US12/311,916 US8320421B2 (en) | 2007-05-28 | 2008-05-20 | Semiconductor light-emitting device |
| CN2008800012177A CN101569069B (zh) | 2007-05-28 | 2008-05-20 | 半导体发光装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007139963 | 2007-05-28 | ||
| JP2007139963 | 2007-05-28 | ||
| JP2007202522 | 2007-08-03 | ||
| JP2007202522 | 2007-08-03 | ||
| JP2008110540A JP5223439B2 (ja) | 2007-05-28 | 2008-04-21 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009060078A JP2009060078A (ja) | 2009-03-19 |
| JP2009060078A5 true JP2009060078A5 (enExample) | 2011-06-02 |
| JP5223439B2 JP5223439B2 (ja) | 2013-06-26 |
Family
ID=40555503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110540A Active JP5223439B2 (ja) | 2007-05-28 | 2008-04-21 | 半導体発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8320421B2 (enExample) |
| JP (1) | JP5223439B2 (enExample) |
| KR (1) | KR20100014237A (enExample) |
| CN (1) | CN101569069B (enExample) |
| TW (1) | TWI394336B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
| JP5186852B2 (ja) * | 2007-09-14 | 2013-04-24 | ソニー株式会社 | 半導体発光素子 |
| JP6181661B2 (ja) * | 2012-10-22 | 2017-08-16 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP6828272B2 (ja) * | 2016-05-25 | 2021-02-10 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光源ユニット及びレーザ装置 |
| US11183215B1 (en) | 2017-11-20 | 2021-11-23 | Seagate Technology Llc | Thin-film crystalline structure with surfaces having selected plane orientations |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0748387B2 (ja) * | 1987-10-19 | 1995-05-24 | 矢崎総業株式会社 | コネクタ |
| US5111469A (en) * | 1989-08-15 | 1992-05-05 | Sony Corporation | Semiconductor laser |
| US5070510A (en) * | 1989-12-12 | 1991-12-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| JPH04199587A (ja) * | 1990-11-29 | 1992-07-20 | Toshiba Corp | 光半導体素子 |
| US5255280A (en) * | 1991-04-22 | 1993-10-19 | Sony Corporation | Semiconductor laser |
| JPH05183223A (ja) * | 1991-12-26 | 1993-07-23 | Nec Corp | 固体レーザ発振器 |
| JPH05183233A (ja) | 1991-12-27 | 1993-07-23 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
| US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
| CA2091302A1 (en) * | 1992-03-11 | 1993-09-12 | Ichiro Yoshida | Semiconductor laser and process for fabricating the same |
| JPH05283813A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | 半導体装置の製造方法 |
| JP3154198B2 (ja) * | 1992-08-25 | 2001-04-09 | ソニー株式会社 | 半導体レーザとその製法 |
| US5311533A (en) * | 1992-10-23 | 1994-05-10 | Polaroid Corporation | Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion |
| JP3225699B2 (ja) * | 1992-12-15 | 2001-11-05 | ソニー株式会社 | 半導体レーザ及びこれを用いた光学装置 |
| JPH10256647A (ja) * | 1997-03-12 | 1998-09-25 | Fuji Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
| US6181723B1 (en) * | 1997-05-07 | 2001-01-30 | Sharp Kabushiki Kaisha | Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same |
| JP3652072B2 (ja) * | 1997-07-30 | 2005-05-25 | シャープ株式会社 | 半導体レーザ素子 |
| JP2000101200A (ja) * | 1998-09-25 | 2000-04-07 | Sony Corp | 半導体レーザーおよびマルチ半導体レーザー |
| JP3676965B2 (ja) * | 1999-08-31 | 2005-07-27 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| JP2004022934A (ja) * | 2002-06-19 | 2004-01-22 | Sony Corp | 半導体レーザ素子及びその製造方法 |
| US7215691B2 (en) * | 2002-09-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
| JP4298460B2 (ja) | 2003-10-06 | 2009-07-22 | フォスター電機株式会社 | パネルスピーカ |
| WO2005117217A1 (ja) * | 2004-05-26 | 2005-12-08 | Nippon Telegraph And Telephone Corporation | 半導体光素子及びその製造方法 |
| JP4780999B2 (ja) * | 2005-04-14 | 2011-09-28 | 三洋電機株式会社 | 半導体レーザ素子の製造方法 |
| JP2006303237A (ja) * | 2005-04-21 | 2006-11-02 | Sharp Corp | 化合物半導体レーザ素子 |
| JP2008294076A (ja) * | 2007-05-22 | 2008-12-04 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
| JP2009071172A (ja) * | 2007-09-14 | 2009-04-02 | Sony Corp | 半導体発光素子及びその製造方法、並びに、下地層の形成方法 |
| JP5186852B2 (ja) * | 2007-09-14 | 2013-04-24 | ソニー株式会社 | 半導体発光素子 |
-
2008
- 2008-04-21 JP JP2008110540A patent/JP5223439B2/ja active Active
- 2008-05-20 TW TW097118527A patent/TWI394336B/zh not_active IP Right Cessation
- 2008-05-20 CN CN2008800012177A patent/CN101569069B/zh active Active
- 2008-05-20 KR KR1020097009308A patent/KR20100014237A/ko not_active Withdrawn
- 2008-05-20 US US12/311,916 patent/US8320421B2/en active Active
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