WO2008146651A1 - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

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Publication number
WO2008146651A1
WO2008146651A1 PCT/JP2008/059195 JP2008059195W WO2008146651A1 WO 2008146651 A1 WO2008146651 A1 WO 2008146651A1 JP 2008059195 W JP2008059195 W JP 2008059195W WO 2008146651 A1 WO2008146651 A1 WO 2008146651A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
impurity
conductivity type
emitting device
semiconductor light
Prior art date
Application number
PCT/JP2008/059195
Other languages
English (en)
French (fr)
Inventor
Nobukata Okano
Sachio Karino
Michiru Kamada
Eiji Takase
Makoto Oogane
Tsuyoshi Nagatake
Hironobu Narui
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008110540A external-priority patent/JP5223439B2/ja
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to US12/311,916 priority Critical patent/US8320421B2/en
Priority to CN2008800012177A priority patent/CN101569069B/zh
Publication of WO2008146651A1 publication Critical patent/WO2008146651A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties

Abstract

　（Ａ）第１導電型を有する第１化合物半導体層（以下、層と略称する）（２１）、活性層（２３）、及び、第２導電型を有する第２層（２２）から構成された発光部（２０）、並びに、（Ｂ）発光部の側面に接して設けられた、第１導電型を有する第３層（４３）、及び、第２導電型を有する第４層（４４）から構成された電流ブロック層（４０）を備え、第１層（２１）を第１導電型とするための不純物は、第１層（２１）における不純物の置換サイトが、第２層（２２）を第２導電型とするための第２層（２２）における不純物の置換サイトと競合しない不純物から成り、第３層（４３）を第１導電型とするための不純物は、第３層（４３）における不純物の置換サイトが、第４層（４４）を第２導電型とするための第４層（４４）における不純物の置換サイトと競合する不純物から成る、電流ブロック層におけるリーク電流の一層の低減を図ることができる半導体発光素子を提供する。
PCT/JP2008/059195 2007-05-28 2008-05-20 半導体発光素子 WO2008146651A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/311,916 US8320421B2 (en) 2007-05-28 2008-05-20 Semiconductor light-emitting device
CN2008800012177A CN101569069B (zh) 2007-05-28 2008-05-20 半导体发光装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007139963 2007-05-28
JP2007-139963 2007-05-28
JP2007-202522 2007-08-03
JP2007202522 2007-08-03
JP2008110540A JP5223439B2 (ja) 2007-05-28 2008-04-21 半導体発光素子
JP2008-110540 2008-04-21

Publications (1)

Publication Number Publication Date
WO2008146651A1 true WO2008146651A1 (ja) 2008-12-04

Family

ID=40316824

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059195 WO2008146651A1 (ja) 2007-05-28 2008-05-20 半導体発光素子

Country Status (1)

Country Link
WO (1) WO2008146651A1 (ja)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183233A (ja) * 1991-12-27 1993-07-23 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JPH05283813A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 半導体装置の製造方法
JPH1154828A (ja) * 1997-07-30 1999-02-26 Sharp Corp 半導体レーザ素子
JP2001144383A (ja) * 1999-08-31 2001-05-25 Sharp Corp 半導体レーザ素子及びその製造方法
WO2005117217A1 (ja) * 2004-05-26 2005-12-08 Nippon Telegraph And Telephone Corporation 半導体光素子及びその製造方法
JP2006295016A (ja) * 2005-04-14 2006-10-26 Sanyo Electric Co Ltd 半導体レーザ素子

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05183233A (ja) * 1991-12-27 1993-07-23 Mitsubishi Electric Corp 半導体レーザおよびその製造方法
JPH05283813A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 半導体装置の製造方法
JPH1154828A (ja) * 1997-07-30 1999-02-26 Sharp Corp 半導体レーザ素子
JP2001144383A (ja) * 1999-08-31 2001-05-25 Sharp Corp 半導体レーザ素子及びその製造方法
WO2005117217A1 (ja) * 2004-05-26 2005-12-08 Nippon Telegraph And Telephone Corporation 半導体光素子及びその製造方法
JP2006295016A (ja) * 2005-04-14 2006-10-26 Sanyo Electric Co Ltd 半導体レーザ素子

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