JP2009071171A5 - - Google Patents
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- Publication number
- JP2009071171A5 JP2009071171A5 JP2007239800A JP2007239800A JP2009071171A5 JP 2009071171 A5 JP2009071171 A5 JP 2009071171A5 JP 2007239800 A JP2007239800 A JP 2007239800A JP 2007239800 A JP2007239800 A JP 2007239800A JP 2009071171 A5 JP2009071171 A5 JP 2009071171A5
- Authority
- JP
- Japan
- Prior art keywords
- compound semiconductor
- semiconductor layer
- impurity
- layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 270
- 150000001875 compounds Chemical class 0.000 claims 249
- 239000012535 impurity Substances 0.000 claims 130
- 238000006467 substitution reaction Methods 0.000 claims 68
- 239000011777 magnesium Substances 0.000 claims 24
- 239000011572 manganese Substances 0.000 claims 24
- 239000011669 selenium Substances 0.000 claims 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 12
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 12
- 229910052790 beryllium Inorganic materials 0.000 claims 12
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims 12
- 229910052799 carbon Inorganic materials 0.000 claims 12
- 229910052749 magnesium Inorganic materials 0.000 claims 12
- 229910052748 manganese Inorganic materials 0.000 claims 12
- 229910052711 selenium Inorganic materials 0.000 claims 12
- 229910052710 silicon Inorganic materials 0.000 claims 12
- 239000010703 silicon Substances 0.000 claims 12
- 229910052717 sulfur Inorganic materials 0.000 claims 12
- 239000011593 sulfur Substances 0.000 claims 12
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 12
- 229910052714 tellurium Inorganic materials 0.000 claims 12
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 12
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 10
- 230000000903 blocking effect Effects 0.000 claims 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims 2
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007239800A JP5186852B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体発光素子 |
| US12/208,855 US7915625B2 (en) | 2007-09-14 | 2008-09-11 | Semiconductor light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007239800A JP5186852B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体発光素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009071171A JP2009071171A (ja) | 2009-04-02 |
| JP2009071171A5 true JP2009071171A5 (enExample) | 2010-05-13 |
| JP5186852B2 JP5186852B2 (ja) | 2013-04-24 |
Family
ID=40453502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007239800A Expired - Fee Related JP5186852B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体発光素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7915625B2 (enExample) |
| JP (1) | JP5186852B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5223439B2 (ja) * | 2007-05-28 | 2013-06-26 | ソニー株式会社 | 半導体発光素子 |
| US8699537B2 (en) * | 2009-10-29 | 2014-04-15 | Tarun Kumar Sharma | Application-oriented nitride substrates for epitaxial growth of electronic and optoelectronic device structures |
| US8575659B1 (en) * | 2011-08-13 | 2013-11-05 | Hrl Laboratories, Llc | Carbon-beryllium combinationally doped semiconductor |
| JP6828272B2 (ja) * | 2016-05-25 | 2021-02-10 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光源ユニット及びレーザ装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2990837B2 (ja) | 1991-04-22 | 1999-12-13 | ソニー株式会社 | 半導体レーザ |
| JPH06132608A (ja) * | 1992-10-20 | 1994-05-13 | Sony Corp | 半導体レーザ及びその製造方法 |
| US5311533A (en) * | 1992-10-23 | 1994-05-10 | Polaroid Corporation | Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion |
| JP2894186B2 (ja) * | 1993-03-03 | 1999-05-24 | 日本電気株式会社 | 光半導体装置 |
| JP3399018B2 (ja) * | 1993-05-18 | 2003-04-21 | ソニー株式会社 | 半導体レーザ及びその製造方法 |
| JP2960838B2 (ja) * | 1993-07-30 | 1999-10-12 | シャープ株式会社 | 半導体装置及びその製造方法 |
| JP3763708B2 (ja) * | 1999-09-21 | 2006-04-05 | 株式会社東芝 | 半導体レーザの製造方法 |
| JP2002232082A (ja) * | 2000-11-30 | 2002-08-16 | Furukawa Electric Co Ltd:The | 埋込型半導体レーザ素子の製造方法、及び埋込型半導体レーザ素子 |
| JPWO2004074805A1 (ja) * | 2003-02-18 | 2006-06-01 | 富士通株式会社 | 光源装置 |
| US20060243992A1 (en) * | 2003-12-26 | 2006-11-02 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device |
| JP2008288284A (ja) * | 2007-05-15 | 2008-11-27 | Sumitomo Electric Ind Ltd | 半導体光素子及びその製造方法 |
| JP5223439B2 (ja) * | 2007-05-28 | 2013-06-26 | ソニー株式会社 | 半導体発光素子 |
| JP2009071172A (ja) * | 2007-09-14 | 2009-04-02 | Sony Corp | 半導体発光素子及びその製造方法、並びに、下地層の形成方法 |
-
2007
- 2007-09-14 JP JP2007239800A patent/JP5186852B2/ja not_active Expired - Fee Related
-
2008
- 2008-09-11 US US12/208,855 patent/US7915625B2/en not_active Expired - Fee Related
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