KR20100014237A - 반도체 발광소자 - Google Patents
반도체 발광소자 Download PDFInfo
- Publication number
- KR20100014237A KR20100014237A KR1020097009308A KR20097009308A KR20100014237A KR 20100014237 A KR20100014237 A KR 20100014237A KR 1020097009308 A KR1020097009308 A KR 1020097009308A KR 20097009308 A KR20097009308 A KR 20097009308A KR 20100014237 A KR20100014237 A KR 20100014237A
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- South Korea
- Prior art keywords
- compound semiconductor
- semiconductor layer
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- layer
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- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 2616
- 150000001875 compounds Chemical class 0.000 claims abstract description 2317
- 239000012535 impurity Substances 0.000 claims abstract description 924
- 238000006467 substitution reaction Methods 0.000 claims abstract description 294
- 238000000034 method Methods 0.000 claims description 80
- 239000011669 selenium Substances 0.000 claims description 80
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 74
- 229910052799 carbon Inorganic materials 0.000 claims description 74
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 48
- 229910052710 silicon Inorganic materials 0.000 claims description 48
- 239000010703 silicon Substances 0.000 claims description 48
- 239000011777 magnesium Substances 0.000 claims description 24
- 239000011572 manganese Substances 0.000 claims description 24
- 229910052720 vanadium Inorganic materials 0.000 claims description 23
- 229910052711 selenium Inorganic materials 0.000 claims description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 15
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 13
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 12
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 12
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
- 229910052790 beryllium Inorganic materials 0.000 claims description 12
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052749 magnesium Inorganic materials 0.000 claims description 12
- 229910052748 manganese Inorganic materials 0.000 claims description 12
- 229910052717 sulfur Inorganic materials 0.000 claims description 12
- 239000011593 sulfur Substances 0.000 claims description 12
- 229910052714 tellurium Inorganic materials 0.000 claims description 12
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 12
- 125000003748 selenium group Chemical group *[Se]* 0.000 claims 1
- 239000010410 layer Substances 0.000 description 2415
- 125000004429 atom Chemical group 0.000 description 138
- 239000013078 crystal Substances 0.000 description 85
- 239000011701 zinc Substances 0.000 description 66
- 239000000758 substrate Substances 0.000 description 52
- 238000009792 diffusion process Methods 0.000 description 36
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 22
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 15
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 230000004888 barrier function Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 10
- 238000013461 design Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000001629 suppression Effects 0.000 description 5
- 229940126062 Compound A Drugs 0.000 description 4
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 229930091051 Arenine Natural products 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008034 disappearance Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- -1 specifically Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- JQJCSZOEVBFDKO-UHFFFAOYSA-N lead zinc Chemical class [Zn].[Pb] JQJCSZOEVBFDKO-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 239000013638 trimer Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2223—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties hetero barrier blocking layers, e.g. P-P or N-N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3072—Diffusion blocking layer, i.e. a special layer blocking diffusion of dopants
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3077—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure plane dependent doping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
- H01S5/3432—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs the whole junction comprising only (AI)GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H20/8162—Current-blocking structures
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007139963 | 2007-05-28 | ||
| JPJP-P-2007-139963 | 2007-05-28 | ||
| JPJP-P-2007-202522 | 2007-08-03 | ||
| JP2007202522 | 2007-08-03 | ||
| JP2008110540A JP5223439B2 (ja) | 2007-05-28 | 2008-04-21 | 半導体発光素子 |
| JPJP-P-2008-110540 | 2008-04-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20100014237A true KR20100014237A (ko) | 2010-02-10 |
Family
ID=40555503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097009308A Withdrawn KR20100014237A (ko) | 2007-05-28 | 2008-05-20 | 반도체 발광소자 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8320421B2 (enExample) |
| JP (1) | JP5223439B2 (enExample) |
| KR (1) | KR20100014237A (enExample) |
| CN (1) | CN101569069B (enExample) |
| TW (1) | TWI394336B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007080896A (ja) * | 2005-09-12 | 2007-03-29 | Sanyo Electric Co Ltd | 半導体素子 |
| JP5186852B2 (ja) * | 2007-09-14 | 2013-04-24 | ソニー株式会社 | 半導体発光素子 |
| JP6181661B2 (ja) * | 2012-10-22 | 2017-08-16 | シャープ株式会社 | 窒化物半導体発光素子 |
| JP6828272B2 (ja) * | 2016-05-25 | 2021-02-10 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光源ユニット及びレーザ装置 |
| US11183215B1 (en) | 2017-11-20 | 2021-11-23 | Seagate Technology Llc | Thin-film crystalline structure with surfaces having selected plane orientations |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0748387B2 (ja) * | 1987-10-19 | 1995-05-24 | 矢崎総業株式会社 | コネクタ |
| US5111469A (en) * | 1989-08-15 | 1992-05-05 | Sony Corporation | Semiconductor laser |
| US5070510A (en) * | 1989-12-12 | 1991-12-03 | Sharp Kabushiki Kaisha | Semiconductor laser device |
| JPH04199587A (ja) * | 1990-11-29 | 1992-07-20 | Toshiba Corp | 光半導体素子 |
| US5255280A (en) * | 1991-04-22 | 1993-10-19 | Sony Corporation | Semiconductor laser |
| JPH05183223A (ja) * | 1991-12-26 | 1993-07-23 | Nec Corp | 固体レーザ発振器 |
| JPH05183233A (ja) | 1991-12-27 | 1993-07-23 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
| US5359619A (en) * | 1992-02-20 | 1994-10-25 | Sumitomo Electric Industries, Ltd. | Multi-beam semiconductor laser and method for producing the same |
| CA2091302A1 (en) * | 1992-03-11 | 1993-09-12 | Ichiro Yoshida | Semiconductor laser and process for fabricating the same |
| JPH05283813A (ja) * | 1992-03-31 | 1993-10-29 | Toshiba Corp | 半導体装置の製造方法 |
| JP3154198B2 (ja) * | 1992-08-25 | 2001-04-09 | ソニー株式会社 | 半導体レーザとその製法 |
| US5311533A (en) * | 1992-10-23 | 1994-05-10 | Polaroid Corporation | Index-guided laser array with select current paths defined by migration-enhanced dopant incorporation and dopant diffusion |
| JP3225699B2 (ja) * | 1992-12-15 | 2001-11-05 | ソニー株式会社 | 半導体レーザ及びこれを用いた光学装置 |
| JPH10256647A (ja) * | 1997-03-12 | 1998-09-25 | Fuji Electric Co Ltd | 半導体レーザ素子およびその製造方法 |
| US6181723B1 (en) * | 1997-05-07 | 2001-01-30 | Sharp Kabushiki Kaisha | Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same |
| JP3652072B2 (ja) * | 1997-07-30 | 2005-05-25 | シャープ株式会社 | 半導体レーザ素子 |
| JP2000101200A (ja) * | 1998-09-25 | 2000-04-07 | Sony Corp | 半導体レーザーおよびマルチ半導体レーザー |
| JP3676965B2 (ja) * | 1999-08-31 | 2005-07-27 | シャープ株式会社 | 半導体レーザ素子及びその製造方法 |
| JP2004022934A (ja) * | 2002-06-19 | 2004-01-22 | Sony Corp | 半導体レーザ素子及びその製造方法 |
| US7215691B2 (en) * | 2002-09-19 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
| JP4298460B2 (ja) | 2003-10-06 | 2009-07-22 | フォスター電機株式会社 | パネルスピーカ |
| WO2005117217A1 (ja) * | 2004-05-26 | 2005-12-08 | Nippon Telegraph And Telephone Corporation | 半導体光素子及びその製造方法 |
| JP4780999B2 (ja) * | 2005-04-14 | 2011-09-28 | 三洋電機株式会社 | 半導体レーザ素子の製造方法 |
| JP2006303237A (ja) * | 2005-04-21 | 2006-11-02 | Sharp Corp | 化合物半導体レーザ素子 |
| JP2008294076A (ja) * | 2007-05-22 | 2008-12-04 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
| JP2009071172A (ja) * | 2007-09-14 | 2009-04-02 | Sony Corp | 半導体発光素子及びその製造方法、並びに、下地層の形成方法 |
| JP5186852B2 (ja) * | 2007-09-14 | 2013-04-24 | ソニー株式会社 | 半導体発光素子 |
-
2008
- 2008-04-21 JP JP2008110540A patent/JP5223439B2/ja active Active
- 2008-05-20 TW TW097118527A patent/TWI394336B/zh not_active IP Right Cessation
- 2008-05-20 CN CN2008800012177A patent/CN101569069B/zh active Active
- 2008-05-20 KR KR1020097009308A patent/KR20100014237A/ko not_active Withdrawn
- 2008-05-20 US US12/311,916 patent/US8320421B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009060078A (ja) | 2009-03-19 |
| CN101569069A (zh) | 2009-10-28 |
| TWI394336B (zh) | 2013-04-21 |
| JP5223439B2 (ja) | 2013-06-26 |
| US20100019255A1 (en) | 2010-01-28 |
| TW200913417A (en) | 2009-03-16 |
| CN101569069B (zh) | 2011-11-16 |
| US8320421B2 (en) | 2012-11-27 |
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