JP2013503481A5 - - Google Patents
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- Publication number
- JP2013503481A5 JP2013503481A5 JP2012526798A JP2012526798A JP2013503481A5 JP 2013503481 A5 JP2013503481 A5 JP 2013503481A5 JP 2012526798 A JP2012526798 A JP 2012526798A JP 2012526798 A JP2012526798 A JP 2012526798A JP 2013503481 A5 JP2013503481 A5 JP 2013503481A5
- Authority
- JP
- Japan
- Prior art keywords
- detector
- electrode
- insulating layer
- semiconductor crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 11
- 229910052714 tellurium Inorganic materials 0.000 claims 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims 4
- 229910052793 cadmium Inorganic materials 0.000 claims 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 229910000510 noble metal Inorganic materials 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- QDOSJNSYIUHXQG-UHFFFAOYSA-N [Mn].[Cd] Chemical compound [Mn].[Cd] QDOSJNSYIUHXQG-UHFFFAOYSA-N 0.000 claims 1
- 230000004888 barrier function Effects 0.000 claims 1
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 239000012212 insulator Substances 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/550,921 US8314395B2 (en) | 2009-08-31 | 2009-08-31 | Semiconductor crystal based radiation detector and method of producing the same |
| US12/550,921 | 2009-08-31 | ||
| PCT/US2010/044231 WO2011025631A2 (en) | 2009-08-31 | 2010-08-03 | Semiconductor crystal based radiation detector and method of producing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013503481A JP2013503481A (ja) | 2013-01-31 |
| JP2013503481A5 true JP2013503481A5 (enExample) | 2013-09-19 |
| JP5732056B2 JP5732056B2 (ja) | 2015-06-10 |
Family
ID=43623436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012526798A Active JP5732056B2 (ja) | 2009-08-31 | 2010-08-03 | 半導体結晶による放射線検出器、及びこの検出器を製造する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8314395B2 (enExample) |
| JP (1) | JP5732056B2 (enExample) |
| CN (1) | CN102483462B (enExample) |
| DE (1) | DE112010003499T5 (enExample) |
| WO (1) | WO2011025631A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8927937B2 (en) * | 2011-05-11 | 2015-01-06 | Koninklijke Philips N.V. | Ionizing radiation detection |
| JP6120041B2 (ja) * | 2012-01-31 | 2017-04-26 | Ｊｘ金属株式会社 | 放射線検出素子および放射線検出器 |
| WO2013175602A1 (ja) * | 2012-05-24 | 2013-11-28 | 三菱電機株式会社 | 放射線計測装置 |
| US8921797B2 (en) * | 2012-06-20 | 2014-12-30 | Oxford Instruments Analytical Oy | Leakage current collection structure and a radiation detector with the same |
| JP2015102340A (ja) * | 2013-11-21 | 2015-06-04 | 日立アロカメディカル株式会社 | 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法 |
| EP3161522B1 (en) * | 2014-12-05 | 2018-02-28 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| WO2016132242A1 (en) | 2015-02-17 | 2016-08-25 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
| CN107809953B (zh) | 2015-06-30 | 2021-04-27 | 皇家飞利浦有限公司 | 具有降低的积聚的x射线设备 |
| JP6018680B2 (ja) * | 2015-10-05 | 2016-11-02 | Ｊｘ金属株式会社 | 放射線検出素子の製造方法 |
| US11056527B2 (en) * | 2016-05-04 | 2021-07-06 | General Electric Company | Metal oxide interface passivation for photon counting devices |
| US20170323923A1 (en) * | 2016-05-04 | 2017-11-09 | General Electric Company | Photon counting devices |
| CN106249269B (zh) * | 2016-08-31 | 2023-05-23 | 同方威视技术股份有限公司 | 半导体探测器 |
| GB201709298D0 (en) * | 2017-06-12 | 2017-07-26 | Science And Tech Facilities Council | Depth Correction in Pixellated detectors of ionizing radiation |
| TWI683428B (zh) | 2018-03-29 | 2020-01-21 | 日商Ｊｘ金屬股份有限公司 | 放射線檢測元件、及其製造方法 |
| JP6998455B2 (ja) | 2018-09-25 | 2022-01-18 | Ｊｘ金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
| US11378701B2 (en) | 2019-10-08 | 2022-07-05 | Redlen Technologies, Inc. | Low dark current radiation detector and method of making the same |
| US11733408B2 (en) | 2020-04-28 | 2023-08-22 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63177574A (ja) * | 1987-01-19 | 1988-07-21 | Fuji Electric Co Ltd | 半導体放射線検出素子 |
| US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
| JPH06260664A (ja) * | 1993-03-05 | 1994-09-16 | Dainippon Printing Co Ltd | 光センサーの製造方法 |
| JP3703217B2 (ja) | 1995-09-04 | 2005-10-05 | キヤノン株式会社 | Ｘ線検出装置 |
| JPH09148615A (ja) * | 1995-11-24 | 1997-06-06 | Japan Energy Corp | 半導体放射線検出器およびその製造方法 |
| US5933706A (en) | 1997-05-28 | 1999-08-03 | James; Ralph | Method for surface treatment of a cadmium zinc telluride crystal |
| US7001849B2 (en) | 1998-07-16 | 2006-02-21 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
| JP3325881B2 (ja) * | 2000-09-25 | 2002-09-17 | 科学技術振興事業団 | 有機光電流増倍デバイス |
| US20030016196A1 (en) * | 2001-07-17 | 2003-01-23 | Display Research Laboratories, Inc. | Thin film transistors suitable for use in flat panel displays |
| JP4346348B2 (ja) * | 2003-05-19 | 2009-10-21 | 株式会社神戸製鋼所 | 半導体放射線検出器 |
| CN101208617A (zh) * | 2005-05-16 | 2008-06-25 | Ⅱ-Ⅵ有限公司 | 高性能CdxZn1－xTe X射线和γ射线辐射检测器及其制造方法 |
| CA2541256A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
| US20070290142A1 (en) * | 2006-06-16 | 2007-12-20 | General Electeric Company | X-ray detectors with adjustable active area electrode assembly |
-
2009
- 2009-08-31 US US12/550,921 patent/US8314395B2/en not_active Expired - Fee Related
-
2010
- 2010-08-03 JP JP2012526798A patent/JP5732056B2/ja active Active
- 2010-08-03 WO PCT/US2010/044231 patent/WO2011025631A2/en not_active Ceased
- 2010-08-03 DE DE112010003499T patent/DE112010003499T5/de not_active Withdrawn
- 2010-08-03 CN CN201080039569.9A patent/CN102483462B/zh not_active Expired - Fee Related
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