CN102483462B - 基于半导体晶体的辐射检测器 - Google Patents

基于半导体晶体的辐射检测器 Download PDF

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Publication number
CN102483462B
CN102483462B CN201080039569.9A CN201080039569A CN102483462B CN 102483462 B CN102483462 B CN 102483462B CN 201080039569 A CN201080039569 A CN 201080039569A CN 102483462 B CN102483462 B CN 102483462B
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China
Prior art keywords
electrode
detector
semiconductor crystal
insulating layer
crystal
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Expired - Fee Related
Application number
CN201080039569.9A
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English (en)
Chinese (zh)
Other versions
CN102483462A (zh
Inventor
M·张
杜岩峰
J·E·特拉茨克
Z·吴
I·布莱维斯
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General Electric Co
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General Electric Co
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors

Landscapes

  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201080039569.9A 2009-08-31 2010-08-03 基于半导体晶体的辐射检测器 Expired - Fee Related CN102483462B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/550,921 US8314395B2 (en) 2009-08-31 2009-08-31 Semiconductor crystal based radiation detector and method of producing the same
US12/550921 2009-08-31
PCT/US2010/044231 WO2011025631A2 (en) 2009-08-31 2010-08-03 Semiconductor crystal based radiation detector and method of producing the same

Publications (2)

Publication Number Publication Date
CN102483462A CN102483462A (zh) 2012-05-30
CN102483462B true CN102483462B (zh) 2017-04-12

Family

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Family Applications (1)

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CN201080039569.9A Expired - Fee Related CN102483462B (zh) 2009-08-31 2010-08-03 基于半导体晶体的辐射检测器

Country Status (5)

Country Link
US (1) US8314395B2 (enExample)
JP (1) JP5732056B2 (enExample)
CN (1) CN102483462B (enExample)
DE (1) DE112010003499T5 (enExample)
WO (1) WO2011025631A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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EP2707753B1 (en) * 2011-05-11 2019-06-12 Koninklijke Philips N.V. Ionizing radiation detection.
JP6120041B2 (ja) * 2012-01-31 2017-04-26 Ｊｘ金属株式会社 放射線検出素子および放射線検出器
JP5791795B2 (ja) * 2012-05-24 2015-10-07 三菱電機株式会社 放射線計測装置
US8921797B2 (en) * 2012-06-20 2014-12-30 Oxford Instruments Analytical Oy Leakage current collection structure and a radiation detector with the same
JP2015102340A (ja) * 2013-11-21 2015-06-04 日立アロカメディカル株式会社 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法
WO2016087423A1 (en) * 2014-12-05 2016-06-09 Koninklijke Philips N.V. X-ray detector device for inclined angle x-ray radiation
WO2016132242A1 (en) 2015-02-17 2016-08-25 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
WO2017001269A1 (en) 2015-06-30 2017-01-05 Koninklijke Philips N.V. X-ray device with reduced pile-up
JP6018680B2 (ja) * 2015-10-05 2016-11-02 Ｊｘ金属株式会社 放射線検出素子の製造方法
US11056527B2 (en) * 2016-05-04 2021-07-06 General Electric Company Metal oxide interface passivation for photon counting devices
US20170323923A1 (en) * 2016-05-04 2017-11-09 General Electric Company Photon counting devices
CN106249269B (zh) * 2016-08-31 2023-05-23 同方威视技术股份有限公司 半导体探测器
GB201709298D0 (en) * 2017-06-12 2017-07-26 Science And Tech Facilities Council Depth Correction in Pixellated detectors of ionizing radiation
TWI683428B (zh) 2018-03-29 2020-01-21 日商Ｊｘ金屬股份有限公司 放射線檢測元件、及其製造方法
WO2020066070A1 (ja) 2018-09-25 2020-04-02 Ｊｘ金属株式会社 放射線検出素子及び放射線検出素子の製造方法
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

Citations (6)

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US5578502A (en) * 1992-01-13 1996-11-26 Photon Energy Inc. Photovoltaic cell manufacturing process
US6080997A (en) * 1995-09-04 2000-06-27 Canon Kabushiki Kaisha Electromagnetic-wave detector
US20030016196A1 (en) * 2001-07-17 2003-01-23 Display Research Laboratories, Inc. Thin film transistors suitable for use in flat panel displays
US20030121885A1 (en) * 1998-07-16 2003-07-03 Wright Gomez W. Ionizing radiation detector
US20070290142A1 (en) * 2006-06-16 2007-12-20 General Electeric Company X-ray detectors with adjustable active area electrode assembly
CN101208617A (zh) * 2005-05-16 2008-06-25 Ⅱ-Ⅵ有限公司 高性能CdxZn1－xTe X射线和γ射线辐射检测器及其制造方法

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JPS63177574A (ja) * 1987-01-19 1988-07-21 Fuji Electric Co Ltd 半導体放射線検出素子
JPH06260664A (ja) * 1993-03-05 1994-09-16 Dainippon Printing Co Ltd 光センサーの製造方法
JPH09148615A (ja) * 1995-11-24 1997-06-06 Japan Energy Corp 半導体放射線検出器およびその製造方法
US5933706A (en) 1997-05-28 1999-08-03 James; Ralph Method for surface treatment of a cadmium zinc telluride crystal
JP3325881B2 (ja) * 2000-09-25 2002-09-17 科学技術振興事業団 有機光電流増倍デバイス
JP4346348B2 (ja) * 2003-05-19 2009-10-21 株式会社神戸製鋼所 半導体放射線検出器
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5578502A (en) * 1992-01-13 1996-11-26 Photon Energy Inc. Photovoltaic cell manufacturing process
US6080997A (en) * 1995-09-04 2000-06-27 Canon Kabushiki Kaisha Electromagnetic-wave detector
US20030121885A1 (en) * 1998-07-16 2003-07-03 Wright Gomez W. Ionizing radiation detector
US20030016196A1 (en) * 2001-07-17 2003-01-23 Display Research Laboratories, Inc. Thin film transistors suitable for use in flat panel displays
CN101208617A (zh) * 2005-05-16 2008-06-25 Ⅱ-Ⅵ有限公司 高性能CdxZn1－xTe X射线和γ射线辐射检测器及其制造方法
US20070290142A1 (en) * 2006-06-16 2007-12-20 General Electeric Company X-ray detectors with adjustable active area electrode assembly

Also Published As

Publication number Publication date
US20110049376A1 (en) 2011-03-03
WO2011025631A2 (en) 2011-03-03
CN102483462A (zh) 2012-05-30
WO2011025631A3 (en) 2012-03-08
US8314395B2 (en) 2012-11-20
DE112010003499T5 (de) 2012-08-02
JP5732056B2 (ja) 2015-06-10
JP2013503481A (ja) 2013-01-31

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