JP5732056B2 - 半導体結晶による放射線検出器、及びこの検出器を製造する方法 - Google Patents

半導体結晶による放射線検出器、及びこの検出器を製造する方法 Download PDF

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JP5732056B2
JP5732056B2 JP2012526798A JP2012526798A JP5732056B2 JP 5732056 B2 JP5732056 B2 JP 5732056B2 JP 2012526798 A JP2012526798 A JP 2012526798A JP 2012526798 A JP2012526798 A JP 2012526798A JP 5732056 B2 JP5732056 B2 JP 5732056B2
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semiconductor crystal
electrode
insulating layer
detector
tellurium
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Japanese (ja)
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JP2013503481A5 (enExample
JP2013503481A (ja
Inventor
ツァン，ミンロン
ドゥ，ヤンフェン
ツカチェク，ジョン・エリック
ウー，ザオピン
ブレヴィス，イラ
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General Electric Co
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General Electric Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • H10F30/2955—Shallow PN junction radiation detectors

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  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2012526798A 2009-08-31 2010-08-03 半導体結晶による放射線検出器、及びこの検出器を製造する方法 Active JP5732056B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/550,921 US8314395B2 (en) 2009-08-31 2009-08-31 Semiconductor crystal based radiation detector and method of producing the same
US12/550,921 2009-08-31
PCT/US2010/044231 WO2011025631A2 (en) 2009-08-31 2010-08-03 Semiconductor crystal based radiation detector and method of producing the same

Publications (3)

Publication Number Publication Date
JP2013503481A JP2013503481A (ja) 2013-01-31
JP2013503481A5 JP2013503481A5 (enExample) 2013-09-19
JP5732056B2 true JP5732056B2 (ja) 2015-06-10

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JP2012526798A Active JP5732056B2 (ja) 2009-08-31 2010-08-03 半導体結晶による放射線検出器、及びこの検出器を製造する方法

Country Status (5)

Country Link
US (1) US8314395B2 (enExample)
JP (1) JP5732056B2 (enExample)
CN (1) CN102483462B (enExample)
DE (1) DE112010003499T5 (enExample)
WO (1) WO2011025631A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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EP2707753B1 (en) * 2011-05-11 2019-06-12 Koninklijke Philips N.V. Ionizing radiation detection.
JP6120041B2 (ja) * 2012-01-31 2017-04-26 Ｊｘ金属株式会社 放射線検出素子および放射線検出器
JP5791795B2 (ja) * 2012-05-24 2015-10-07 三菱電機株式会社 放射線計測装置
US8921797B2 (en) * 2012-06-20 2014-12-30 Oxford Instruments Analytical Oy Leakage current collection structure and a radiation detector with the same
JP2015102340A (ja) * 2013-11-21 2015-06-04 日立アロカメディカル株式会社 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法
WO2016087423A1 (en) * 2014-12-05 2016-06-09 Koninklijke Philips N.V. X-ray detector device for inclined angle x-ray radiation
WO2016132242A1 (en) 2015-02-17 2016-08-25 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof
WO2017001269A1 (en) 2015-06-30 2017-01-05 Koninklijke Philips N.V. X-ray device with reduced pile-up
JP6018680B2 (ja) * 2015-10-05 2016-11-02 Ｊｘ金属株式会社 放射線検出素子の製造方法
US11056527B2 (en) * 2016-05-04 2021-07-06 General Electric Company Metal oxide interface passivation for photon counting devices
US20170323923A1 (en) * 2016-05-04 2017-11-09 General Electric Company Photon counting devices
CN106249269B (zh) * 2016-08-31 2023-05-23 同方威视技术股份有限公司 半导体探测器
GB201709298D0 (en) * 2017-06-12 2017-07-26 Science And Tech Facilities Council Depth Correction in Pixellated detectors of ionizing radiation
TWI683428B (zh) 2018-03-29 2020-01-21 日商Ｊｘ金屬股份有限公司 放射線檢測元件、及其製造方法
WO2020066070A1 (ja) 2018-09-25 2020-04-02 Ｊｘ金属株式会社 放射線検出素子及び放射線検出素子の製造方法
US11378701B2 (en) 2019-10-08 2022-07-05 Redlen Technologies, Inc. Low dark current radiation detector and method of making the same
US11733408B2 (en) 2020-04-28 2023-08-22 Redlen Technologies, Inc. High-performance radiation detectors and methods of fabricating thereof

Family Cites Families (13)

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JPS63177574A (ja) * 1987-01-19 1988-07-21 Fuji Electric Co Ltd 半導体放射線検出素子
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
JPH06260664A (ja) * 1993-03-05 1994-09-16 Dainippon Printing Co Ltd 光センサーの製造方法
JP3703217B2 (ja) 1995-09-04 2005-10-05 キヤノン株式会社 Ｘ線検出装置
JPH09148615A (ja) * 1995-11-24 1997-06-06 Japan Energy Corp 半導体放射線検出器およびその製造方法
US5933706A (en) 1997-05-28 1999-08-03 James; Ralph Method for surface treatment of a cadmium zinc telluride crystal
US7001849B2 (en) 1998-07-16 2006-02-21 Sandia National Laboratories Surface treatment and protection method for cadmium zinc telluride crystals
JP3325881B2 (ja) * 2000-09-25 2002-09-17 科学技術振興事業団 有機光電流増倍デバイス
US20030016196A1 (en) * 2001-07-17 2003-01-23 Display Research Laboratories, Inc. Thin film transistors suitable for use in flat panel displays
JP4346348B2 (ja) * 2003-05-19 2009-10-21 株式会社神戸製鋼所 半導体放射線検出器
WO2007024302A2 (en) 2005-05-16 2007-03-01 Ii-Vi Incorporated High performance cdxzn1-xte x-ray and gamma ray radiation detector and method of manufacture thereof
CA2541256A1 (en) * 2006-02-22 2007-08-22 Redlen Technologies Inc. Shielding electrode for monolithic radiation detector
US20070290142A1 (en) * 2006-06-16 2007-12-20 General Electeric Company X-ray detectors with adjustable active area electrode assembly

Also Published As

Publication number Publication date
US20110049376A1 (en) 2011-03-03
WO2011025631A2 (en) 2011-03-03
CN102483462A (zh) 2012-05-30
WO2011025631A3 (en) 2012-03-08
US8314395B2 (en) 2012-11-20
CN102483462B (zh) 2017-04-12
DE112010003499T5 (de) 2012-08-02
JP2013503481A (ja) 2013-01-31

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