DE112010003499T5 - Strahlungsdetektor auf der Grundlage eines Halbleiterkristalls und Verfahren zu dessen Herstellung - Google Patents
Strahlungsdetektor auf der Grundlage eines Halbleiterkristalls und Verfahren zu dessen Herstellung Download PDFInfo
- Publication number
- DE112010003499T5 DE112010003499T5 DE112010003499T DE112010003499T DE112010003499T5 DE 112010003499 T5 DE112010003499 T5 DE 112010003499T5 DE 112010003499 T DE112010003499 T DE 112010003499T DE 112010003499 T DE112010003499 T DE 112010003499T DE 112010003499 T5 DE112010003499 T5 DE 112010003499T5
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor crystal
- tellurium
- detector
- electrode
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 95
- 239000004065 semiconductor Substances 0.000 title claims abstract description 87
- 230000005855 radiation Effects 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 229910052714 tellurium Inorganic materials 0.000 claims description 42
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 20
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 229910052793 cadmium Inorganic materials 0.000 claims description 14
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 14
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 235000014655 lactic acid Nutrition 0.000 claims description 6
- 239000004310 lactic acid Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910000510 noble metal Inorganic materials 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- QDOSJNSYIUHXQG-UHFFFAOYSA-N [Mn].[Cd] Chemical compound [Mn].[Cd] QDOSJNSYIUHXQG-UHFFFAOYSA-N 0.000 claims 2
- CEKJAYFBQARQNG-UHFFFAOYSA-N cadmium zinc Chemical compound [Zn].[Cd] CEKJAYFBQARQNG-UHFFFAOYSA-N 0.000 claims 2
- 230000001105 regulatory effect Effects 0.000 claims 1
- 239000011701 zinc Substances 0.000 description 9
- 230000005865 ionizing radiation Effects 0.000 description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 6
- 239000007772 electrode material Substances 0.000 description 5
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- UGWHUVVBJMQKQI-UHFFFAOYSA-N [In].[In].[Au] Chemical compound [In].[In].[Au] UGWHUVVBJMQKQI-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
- H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
- H10F30/2955—Shallow PN junction radiation detectors
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/550,921 US8314395B2 (en) | 2009-08-31 | 2009-08-31 | Semiconductor crystal based radiation detector and method of producing the same |
| US12/550,921 | 2009-08-31 | ||
| PCT/US2010/044231 WO2011025631A2 (en) | 2009-08-31 | 2010-08-03 | Semiconductor crystal based radiation detector and method of producing the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112010003499T5 true DE112010003499T5 (de) | 2012-08-02 |
Family
ID=43623436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112010003499T Withdrawn DE112010003499T5 (de) | 2009-08-31 | 2010-08-03 | Strahlungsdetektor auf der Grundlage eines Halbleiterkristalls und Verfahren zu dessen Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8314395B2 (enExample) |
| JP (1) | JP5732056B2 (enExample) |
| CN (1) | CN102483462B (enExample) |
| DE (1) | DE112010003499T5 (enExample) |
| WO (1) | WO2011025631A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2707753B1 (en) * | 2011-05-11 | 2019-06-12 | Koninklijke Philips N.V. | Ionizing radiation detection. |
| JP6120041B2 (ja) * | 2012-01-31 | 2017-04-26 | Ｊｘ金属株式会社 | 放射線検出素子および放射線検出器 |
| JP5791795B2 (ja) * | 2012-05-24 | 2015-10-07 | 三菱電機株式会社 | 放射線計測装置 |
| US8921797B2 (en) * | 2012-06-20 | 2014-12-30 | Oxford Instruments Analytical Oy | Leakage current collection structure and a radiation detector with the same |
| JP2015102340A (ja) * | 2013-11-21 | 2015-06-04 | 日立アロカメディカル株式会社 | 放射線検出素子およびそれを備えた放射線検出器、核医学診断装置ならびに放射線検出素子の製造方法 |
| WO2016087423A1 (en) * | 2014-12-05 | 2016-06-09 | Koninklijke Philips N.V. | X-ray detector device for inclined angle x-ray radiation |
| WO2016132242A1 (en) | 2015-02-17 | 2016-08-25 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
| WO2017001269A1 (en) | 2015-06-30 | 2017-01-05 | Koninklijke Philips N.V. | X-ray device with reduced pile-up |
| JP6018680B2 (ja) * | 2015-10-05 | 2016-11-02 | Ｊｘ金属株式会社 | 放射線検出素子の製造方法 |
| US11056527B2 (en) * | 2016-05-04 | 2021-07-06 | General Electric Company | Metal oxide interface passivation for photon counting devices |
| US20170323923A1 (en) * | 2016-05-04 | 2017-11-09 | General Electric Company | Photon counting devices |
| CN106249269B (zh) * | 2016-08-31 | 2023-05-23 | 同方威视技术股份有限公司 | 半导体探测器 |
| GB201709298D0 (en) * | 2017-06-12 | 2017-07-26 | Science And Tech Facilities Council | Depth Correction in Pixellated detectors of ionizing radiation |
| TWI683428B (zh) | 2018-03-29 | 2020-01-21 | 日商Ｊｘ金屬股份有限公司 | 放射線檢測元件、及其製造方法 |
| WO2020066070A1 (ja) | 2018-09-25 | 2020-04-02 | Ｊｘ金属株式会社 | 放射線検出素子及び放射線検出素子の製造方法 |
| US11378701B2 (en) | 2019-10-08 | 2022-07-05 | Redlen Technologies, Inc. | Low dark current radiation detector and method of making the same |
| US11733408B2 (en) | 2020-04-28 | 2023-08-22 | Redlen Technologies, Inc. | High-performance radiation detectors and methods of fabricating thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070290142A1 (en) | 2006-06-16 | 2007-12-20 | General Electeric Company | X-ray detectors with adjustable active area electrode assembly |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63177574A (ja) * | 1987-01-19 | 1988-07-21 | Fuji Electric Co Ltd | 半導体放射線検出素子 |
| US5501744A (en) * | 1992-01-13 | 1996-03-26 | Photon Energy, Inc. | Photovoltaic cell having a p-type polycrystalline layer with large crystals |
| JPH06260664A (ja) * | 1993-03-05 | 1994-09-16 | Dainippon Printing Co Ltd | 光センサーの製造方法 |
| JP3703217B2 (ja) | 1995-09-04 | 2005-10-05 | キヤノン株式会社 | Ｘ線検出装置 |
| JPH09148615A (ja) * | 1995-11-24 | 1997-06-06 | Japan Energy Corp | 半導体放射線検出器およびその製造方法 |
| US5933706A (en) | 1997-05-28 | 1999-08-03 | James; Ralph | Method for surface treatment of a cadmium zinc telluride crystal |
| US7001849B2 (en) | 1998-07-16 | 2006-02-21 | Sandia National Laboratories | Surface treatment and protection method for cadmium zinc telluride crystals |
| JP3325881B2 (ja) * | 2000-09-25 | 2002-09-17 | 科学技術振興事業団 | 有機光電流増倍デバイス |
| US20030016196A1 (en) * | 2001-07-17 | 2003-01-23 | Display Research Laboratories, Inc. | Thin film transistors suitable for use in flat panel displays |
| JP4346348B2 (ja) * | 2003-05-19 | 2009-10-21 | 株式会社神戸製鋼所 | 半導体放射線検出器 |
| WO2007024302A2 (en) | 2005-05-16 | 2007-03-01 | Ii-Vi Incorporated | High performance cdxzn1-xte x-ray and gamma ray radiation detector and method of manufacture thereof |
| CA2541256A1 (en) * | 2006-02-22 | 2007-08-22 | Redlen Technologies Inc. | Shielding electrode for monolithic radiation detector |
-
2009
- 2009-08-31 US US12/550,921 patent/US8314395B2/en not_active Expired - Fee Related
-
2010
- 2010-08-03 JP JP2012526798A patent/JP5732056B2/ja active Active
- 2010-08-03 DE DE112010003499T patent/DE112010003499T5/de not_active Withdrawn
- 2010-08-03 WO PCT/US2010/044231 patent/WO2011025631A2/en not_active Ceased
- 2010-08-03 CN CN201080039569.9A patent/CN102483462B/zh not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070290142A1 (en) | 2006-06-16 | 2007-12-20 | General Electeric Company | X-ray detectors with adjustable active area electrode assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| US20110049376A1 (en) | 2011-03-03 |
| WO2011025631A2 (en) | 2011-03-03 |
| CN102483462A (zh) | 2012-05-30 |
| WO2011025631A3 (en) | 2012-03-08 |
| US8314395B2 (en) | 2012-11-20 |
| CN102483462B (zh) | 2017-04-12 |
| JP5732056B2 (ja) | 2015-06-10 |
| JP2013503481A (ja) | 2013-01-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R163 | Identified publications notified | ||
| R012 | Request for examination validly filed | ||
| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |