TWI339447B - Structures for reducing operating voltage in a semiconductor device - Google Patents
Structures for reducing operating voltage in a semiconductor device Download PDFInfo
- Publication number
- TWI339447B TWI339447B TW095128650A TW95128650A TWI339447B TW I339447 B TWI339447 B TW I339447B TW 095128650 A TW095128650 A TW 095128650A TW 95128650 A TW95128650 A TW 95128650A TW I339447 B TWI339447 B TW I339447B
- Authority
- TW
- Taiwan
- Prior art keywords
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- layer
- channel junction
- material layer
- junction layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 75
- 239000000463 material Substances 0.000 claims description 137
- 239000002019 doping agent Substances 0.000 claims description 74
- 108091006146 Channels Proteins 0.000 claims description 69
- 108090000699 N-Type Calcium Channels Proteins 0.000 claims description 22
- 102000004129 N-Type Calcium Channels Human genes 0.000 claims description 22
- 239000011777 magnesium Substances 0.000 claims description 21
- 108010075750 P-Type Calcium Channels Proteins 0.000 claims description 20
- 230000007547 defect Effects 0.000 claims description 19
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 15
- 230000005641 tunneling Effects 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 15
- 229910052725 zinc Inorganic materials 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- 239000011135 tin Substances 0.000 claims description 11
- 239000011575 calcium Substances 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 3
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 2
- 230000007812 deficiency Effects 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 229910001338 liquidmetal Inorganic materials 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 187
- 238000010586 diagram Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 15
- 230000005693 optoelectronics Effects 0.000 description 10
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 150000002910 rare earth metals Chemical group 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- -1 (Cd) Chemical compound 0.000 description 1
- IFZHGQSUNAKKSN-UHFFFAOYSA-N 1,1-diethylhydrazine Chemical compound CCN(N)CC IFZHGQSUNAKKSN-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 210000003050 axon Anatomy 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- MPZNMEBSWMRGFG-UHFFFAOYSA-N bismuth indium Chemical compound [In].[Bi] MPZNMEBSWMRGFG-UHFFFAOYSA-N 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- VQNPSCRXHSIJTH-UHFFFAOYSA-N cadmium(2+);carbanide Chemical compound [CH3-].[CH3-].[Cd+2] VQNPSCRXHSIJTH-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000012707 chemical precursor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229940125810 compound 20 Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- RWWNQEOPUOCKGR-UHFFFAOYSA-N tetraethyltin Chemical compound CC[Sn](CC)(CC)CC RWWNQEOPUOCKGR-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/203,917 US7473941B2 (en) | 2005-08-15 | 2005-08-15 | Structures for reducing operating voltage in a semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200715616A TW200715616A (en) | 2007-04-16 |
| TWI339447B true TWI339447B (en) | 2011-03-21 |
Family
ID=37398551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095128650A TWI339447B (en) | 2005-08-15 | 2006-08-04 | Structures for reducing operating voltage in a semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7473941B2 (enExample) |
| EP (1) | EP1755173B1 (enExample) |
| JP (1) | JP5143384B2 (enExample) |
| KR (1) | KR101242933B1 (enExample) |
| CN (1) | CN1917241B (enExample) |
| DE (1) | DE602006004119D1 (enExample) |
| TW (1) | TWI339447B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI470826B (zh) * | 2012-03-30 | 2015-01-21 | Phostek Inc | 發光二極體裝置 |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070227588A1 (en) * | 2006-02-15 | 2007-10-04 | The Regents Of The University Of California | Enhanced tunnel junction for improved performance in cascaded solar cells |
| KR100809243B1 (ko) * | 2006-04-27 | 2008-02-29 | 삼성전기주식회사 | 질화물막 제조방법 및 질화물 구조 |
| JP4827706B2 (ja) * | 2006-12-04 | 2011-11-30 | シャープ株式会社 | 窒化物半導体発光素子 |
| DE102007003991A1 (de) * | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip mit einem Tunnelübergang |
| DE102007019079A1 (de) | 2007-01-26 | 2008-07-31 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
| JP5148885B2 (ja) * | 2007-01-30 | 2013-02-20 | シャープ株式会社 | 窒化物半導体発光素子 |
| TW200905928A (en) * | 2007-03-29 | 2009-02-01 | Univ California | Dual surface-roughened N-face high-brightness LED |
| DE102007031926A1 (de) * | 2007-07-09 | 2009-01-15 | Osram Opto Semiconductors Gmbh | Strahlungsemittierender Halbleiterkörper |
| WO2009009111A2 (en) * | 2007-07-10 | 2009-01-15 | The Board Of Trustees Of The Leland Stanford Junior University | GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY |
| DE102008028036A1 (de) * | 2008-02-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen |
| US20100319764A1 (en) * | 2009-06-23 | 2010-12-23 | Solar Junction Corp. | Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells |
| US20110114163A1 (en) * | 2009-11-18 | 2011-05-19 | Solar Junction Corporation | Multijunction solar cells formed on n-doped substrates |
| US20110232730A1 (en) | 2010-03-29 | 2011-09-29 | Solar Junction Corp. | Lattice matchable alloy for solar cells |
| US9214580B2 (en) | 2010-10-28 | 2015-12-15 | Solar Junction Corporation | Multi-junction solar cell with dilute nitride sub-cell having graded doping |
| US8962991B2 (en) | 2011-02-25 | 2015-02-24 | Solar Junction Corporation | Pseudomorphic window layer for multijunction solar cells |
| US8766087B2 (en) | 2011-05-10 | 2014-07-01 | Solar Junction Corporation | Window structure for solar cell |
| JP5678806B2 (ja) * | 2011-06-07 | 2015-03-04 | 株式会社デンソー | 半導体レーザ及びその製造方法 |
| WO2013074530A2 (en) | 2011-11-15 | 2013-05-23 | Solar Junction Corporation | High efficiency multijunction solar cells |
| US9153724B2 (en) | 2012-04-09 | 2015-10-06 | Solar Junction Corporation | Reverse heterojunctions for solar cells |
| IL225872A (en) * | 2013-04-22 | 2015-03-31 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Photo detector semi-conductor with barrier |
| TWI597862B (zh) * | 2013-08-30 | 2017-09-01 | 晶元光電股份有限公司 | 具阻障層的光電半導體元件 |
| EP3761375A1 (en) | 2014-02-05 | 2021-01-06 | Array Photonics, Inc. | Monolithic multijunction power converter |
| JP6462456B2 (ja) * | 2015-03-31 | 2019-01-30 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体装置の製造方法 |
| US20170110613A1 (en) | 2015-10-19 | 2017-04-20 | Solar Junction Corporation | High efficiency multijunction photovoltaic cells |
| JP6708442B2 (ja) * | 2016-03-01 | 2020-06-10 | 学校法人 名城大学 | 窒化物半導体発光素子 |
| TWI617048B (zh) * | 2016-06-29 | 2018-03-01 | 光鋐科技股份有限公司 | 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法 |
| US10930808B2 (en) | 2017-07-06 | 2021-02-23 | Array Photonics, Inc. | Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells |
| CN107482091B (zh) | 2017-07-25 | 2019-10-22 | 天津三安光电有限公司 | 一种用于多结led的隧穿结、多结led及其制备方法 |
| WO2019067553A1 (en) | 2017-09-27 | 2019-04-04 | Solar Junction Corporation | SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER |
| JP6964875B2 (ja) * | 2017-11-10 | 2021-11-10 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法 |
| JP7169613B2 (ja) * | 2017-11-10 | 2022-11-11 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法 |
| EP3939085A1 (en) | 2019-03-11 | 2022-01-19 | Array Photonics, Inc. | Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions |
| KR102253285B1 (ko) * | 2019-10-10 | 2021-05-18 | (주)큐에스아이 | 반도체 레이저 다이오드 소자 및 그 제조 방법 |
| JP7481618B2 (ja) | 2020-03-30 | 2024-05-13 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
| CN112103352B (zh) * | 2020-09-18 | 2022-02-01 | 苏州长光华芯光电技术股份有限公司 | 一种半导体器件及其制造方法 |
| WO2024237161A1 (ja) * | 2023-05-12 | 2024-11-21 | 住友電気工業株式会社 | 半導体積層体および光半導体素子 |
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| US4131904A (en) * | 1977-06-29 | 1978-12-26 | Rca Corporation | Degradation resistance of semiconductor electroluminescent devices |
| US4223336A (en) * | 1978-03-14 | 1980-09-16 | Microwave Semiconductor Corp. | Low resistivity ohmic contacts for compound semiconductor devices |
| JPH01194379A (ja) | 1988-01-29 | 1989-08-04 | Toshiba Corp | 可視光発光素子 |
| JP3504976B2 (ja) | 1994-08-26 | 2004-03-08 | ローム株式会社 | 半導体発光素子 |
| US5825052A (en) * | 1994-08-26 | 1998-10-20 | Rohm Co., Ltd. | Semiconductor light emmitting device |
| JP3461112B2 (ja) | 1997-12-19 | 2003-10-27 | 昭和電工株式会社 | Ｉｉｉ族窒化物半導体発光素子 |
| US6657300B2 (en) | 1998-06-05 | 2003-12-02 | Lumileds Lighting U.S., Llc | Formation of ohmic contacts in III-nitride light emitting devices |
| US6375923B1 (en) | 1999-06-24 | 2002-04-23 | Altair Nanomaterials Inc. | Processing titaniferous ore to titanium dioxide pigment |
| TW515116B (en) * | 2001-12-27 | 2002-12-21 | South Epitaxy Corp | Light emitting diode structure |
| US6878975B2 (en) * | 2002-02-08 | 2005-04-12 | Agilent Technologies, Inc. | Polarization field enhanced tunnel structures |
| US6765238B2 (en) * | 2002-09-12 | 2004-07-20 | Agilent Technologies, Inc. | Material systems for semiconductor tunnel-junction structures |
| DE10329079B4 (de) | 2003-06-27 | 2014-10-23 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Halbleiterbauelement |
| JP2005123476A (ja) | 2003-10-17 | 2005-05-12 | Sharp Corp | 半導体レーザ素子とその製造方法 |
| KR20050093319A (ko) * | 2004-03-18 | 2005-09-23 | 삼성전기주식회사 | 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법 |
-
2005
- 2005-08-15 US US11/203,917 patent/US7473941B2/en not_active Expired - Fee Related
-
2006
- 2006-08-04 TW TW095128650A patent/TWI339447B/zh not_active IP Right Cessation
- 2006-08-08 DE DE602006004119T patent/DE602006004119D1/de active Active
- 2006-08-08 EP EP06016546A patent/EP1755173B1/en not_active Not-in-force
- 2006-08-14 KR KR1020060076549A patent/KR101242933B1/ko not_active Expired - Fee Related
- 2006-08-14 CN CN2006101095818A patent/CN1917241B/zh not_active Expired - Fee Related
- 2006-08-15 JP JP2006221375A patent/JP5143384B2/ja not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI470826B (zh) * | 2012-03-30 | 2015-01-21 | Phostek Inc | 發光二極體裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007053376A (ja) | 2007-03-01 |
| EP1755173B1 (en) | 2008-12-10 |
| KR20070020347A (ko) | 2007-02-21 |
| KR101242933B1 (ko) | 2013-03-12 |
| TW200715616A (en) | 2007-04-16 |
| US7473941B2 (en) | 2009-01-06 |
| EP1755173A2 (en) | 2007-02-21 |
| CN1917241A (zh) | 2007-02-21 |
| DE602006004119D1 (de) | 2009-01-22 |
| US20070034853A1 (en) | 2007-02-15 |
| CN1917241B (zh) | 2010-10-06 |
| JP5143384B2 (ja) | 2013-02-13 |
| EP1755173A3 (en) | 2007-06-20 |
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