JP5143384B2 - 半導体素子の作動電圧を低下させるための構造 - Google Patents

半導体素子の作動電圧を低下させるための構造 Download PDF

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JP5143384B2
JP5143384B2 JP2006221375A JP2006221375A JP5143384B2 JP 5143384 B2 JP5143384 B2 JP 5143384B2 JP 2006221375 A JP2006221375 A JP 2006221375A JP 2006221375 A JP2006221375 A JP 2006221375A JP 5143384 B2 JP5143384 B2 JP 5143384B2
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tunnel junction
type
layer
dopants
junction layer
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JP2007053376A5 (enExample
JP2007053376A (ja
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バージニア・エム・ロビンス
スティーブン・ディー・レスター
ジェフェリー・エヌ・ミラー
デイビッド・ボアー
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アバゴ・テクノロジーズ・イーシービーユー・アイピー（シンガポール）プライベート・リミテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006221375A 2005-08-15 2006-08-15 半導体素子の作動電圧を低下させるための構造 Expired - Fee Related JP5143384B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/203,917 US7473941B2 (en) 2005-08-15 2005-08-15 Structures for reducing operating voltage in a semiconductor device
US11/203917 2005-08-15

Publications (3)

Publication Number Publication Date
JP2007053376A JP2007053376A (ja) 2007-03-01
JP2007053376A5 JP2007053376A5 (enExample) 2009-09-17
JP5143384B2 true JP5143384B2 (ja) 2013-02-13

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JP2006221375A Expired - Fee Related JP5143384B2 (ja) 2005-08-15 2006-08-15 半導体素子の作動電圧を低下させるための構造

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Country Link
US (1) US7473941B2 (enExample)
EP (1) EP1755173B1 (enExample)
JP (1) JP5143384B2 (enExample)
KR (1) KR101242933B1 (enExample)
CN (1) CN1917241B (enExample)
DE (1) DE602006004119D1 (enExample)
TW (1) TWI339447B (enExample)

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US20080277682A1 (en) * 2007-03-29 2008-11-13 The Regents Of The University Of California Dual surface-roughened n-face high-brightness led
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DE102008028036A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
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TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
CN106133923B (zh) 2014-02-05 2018-07-24 太阳结公司 单片式多结能量转换器
JP6462456B2 (ja) * 2015-03-31 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
JP6708442B2 (ja) * 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
TWI617048B (zh) * 2016-06-29 2018-03-01 光鋐科技股份有限公司 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
CN107482091B (zh) 2017-07-25 2019-10-22 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法
EP3669402A1 (en) 2017-09-27 2020-06-24 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having a dilute nitride layer
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP6964875B2 (ja) * 2017-11-10 2021-11-10 学校法人 名城大学 窒化物半導体発光素子の製造方法
US11211514B2 (en) 2019-03-11 2021-12-28 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
KR102253285B1 (ko) * 2019-10-10 2021-05-18 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법
JP7481618B2 (ja) 2020-03-30 2024-05-13 日亜化学工業株式会社 窒化物半導体素子の製造方法
CN112103352B (zh) * 2020-09-18 2022-02-01 苏州长光华芯光电技术股份有限公司 一种半导体器件及其制造方法
WO2024237161A1 (ja) * 2023-05-12 2024-11-21 住友電気工業株式会社 半導体積層体および光半導体素子

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US6657300B2 (en) 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
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KR20050093319A (ko) * 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법

Also Published As

Publication number Publication date
EP1755173A3 (en) 2007-06-20
US20070034853A1 (en) 2007-02-15
TW200715616A (en) 2007-04-16
US7473941B2 (en) 2009-01-06
KR20070020347A (ko) 2007-02-21
CN1917241B (zh) 2010-10-06
JP2007053376A (ja) 2007-03-01
KR101242933B1 (ko) 2013-03-12
TWI339447B (en) 2011-03-21
CN1917241A (zh) 2007-02-21
EP1755173B1 (en) 2008-12-10
EP1755173A2 (en) 2007-02-21
DE602006004119D1 (de) 2009-01-22

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