KR101242933B1 - 발광 디바이스 및 그 제조 방법 - Google Patents

발광 디바이스 및 그 제조 방법 Download PDF

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Publication number
KR101242933B1
KR101242933B1 KR1020060076549A KR20060076549A KR101242933B1 KR 101242933 B1 KR101242933 B1 KR 101242933B1 KR 1020060076549 A KR1020060076549 A KR 1020060076549A KR 20060076549 A KR20060076549 A KR 20060076549A KR 101242933 B1 KR101242933 B1 KR 101242933B1
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South Korea
Prior art keywords
tunnel junction
type
layer
junction layer
light emitting
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Korean (ko)
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KR20070020347A (ko
Inventor
버지니아 엠 로빈스
제프리 엔 밀러
데이비드 보우어
스티븐 디 레스터
Original Assignee
아바고 테크놀로지스 이씨비유 아이피 (싱가포르) 피티이 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
KR1020060076549A 2005-08-15 2006-08-14 발광 디바이스 및 그 제조 방법 Expired - Fee Related KR101242933B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/203,917 US7473941B2 (en) 2005-08-15 2005-08-15 Structures for reducing operating voltage in a semiconductor device
US11/203,917 2005-08-15

Publications (2)

Publication Number Publication Date
KR20070020347A KR20070020347A (ko) 2007-02-21
KR101242933B1 true KR101242933B1 (ko) 2013-03-12

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KR1020060076549A Expired - Fee Related KR101242933B1 (ko) 2005-08-15 2006-08-14 발광 디바이스 및 그 제조 방법

Country Status (7)

Country Link
US (1) US7473941B2 (enExample)
EP (1) EP1755173B1 (enExample)
JP (1) JP5143384B2 (enExample)
KR (1) KR101242933B1 (enExample)
CN (1) CN1917241B (enExample)
DE (1) DE602006004119D1 (enExample)
TW (1) TWI339447B (enExample)

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JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007003991A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einem Tunnelübergang
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP5148885B2 (ja) * 2007-01-30 2013-02-20 シャープ株式会社 窒化物半導体発光素子
TW200905928A (en) * 2007-03-29 2009-02-01 Univ California Dual surface-roughened N-face high-brightness LED
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
WO2009009111A2 (en) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY
DE102008028036A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
IL225872A (en) * 2013-04-22 2015-03-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Photo detector semi-conductor with barrier
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
EP3761375A1 (en) 2014-02-05 2021-01-06 Array Photonics, Inc. Monolithic multijunction power converter
JP6462456B2 (ja) * 2015-03-31 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
JP6708442B2 (ja) * 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
TWI617048B (zh) * 2016-06-29 2018-03-01 光鋐科技股份有限公司 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
CN107482091B (zh) 2017-07-25 2019-10-22 天津三安光电有限公司 一种用于多结led的隧穿结、多结led及其制备方法
WO2019067553A1 (en) 2017-09-27 2019-04-04 Solar Junction Corporation SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER
JP6964875B2 (ja) * 2017-11-10 2021-11-10 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
EP3939085A1 (en) 2019-03-11 2022-01-19 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
KR102253285B1 (ko) * 2019-10-10 2021-05-18 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법
JP7481618B2 (ja) 2020-03-30 2024-05-13 日亜化学工業株式会社 窒化物半導体素子の製造方法
CN112103352B (zh) * 2020-09-18 2022-02-01 苏州长光华芯光电技术股份有限公司 一种半导体器件及其制造方法
WO2024237161A1 (ja) * 2023-05-12 2024-11-21 住友電気工業株式会社 半導体積層体および光半導体素子

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JPH0864869A (ja) * 1994-08-26 1996-03-08 Rohm Co Ltd 半導体発光素子
JP2005123476A (ja) * 2003-10-17 2005-05-12 Sharp Corp 半導体レーザ素子とその製造方法

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US4131904A (en) * 1977-06-29 1978-12-26 Rca Corporation Degradation resistance of semiconductor electroluminescent devices
US4223336A (en) * 1978-03-14 1980-09-16 Microwave Semiconductor Corp. Low resistivity ohmic contacts for compound semiconductor devices
US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device
JP3461112B2 (ja) 1997-12-19 2003-10-27 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
US6657300B2 (en) 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
US6375923B1 (en) 1999-06-24 2002-04-23 Altair Nanomaterials Inc. Processing titaniferous ore to titanium dioxide pigment
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
DE10329079B4 (de) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
KR20050093319A (ko) * 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH01194379A (ja) * 1988-01-29 1989-08-04 Toshiba Corp 可視光発光素子
JPH0864869A (ja) * 1994-08-26 1996-03-08 Rohm Co Ltd 半導体発光素子
JP2005123476A (ja) * 2003-10-17 2005-05-12 Sharp Corp 半導体レーザ素子とその製造方法

Also Published As

Publication number Publication date
JP2007053376A (ja) 2007-03-01
EP1755173B1 (en) 2008-12-10
KR20070020347A (ko) 2007-02-21
TW200715616A (en) 2007-04-16
US7473941B2 (en) 2009-01-06
EP1755173A2 (en) 2007-02-21
CN1917241A (zh) 2007-02-21
DE602006004119D1 (de) 2009-01-22
US20070034853A1 (en) 2007-02-15
CN1917241B (zh) 2010-10-06
TWI339447B (en) 2011-03-21
JP5143384B2 (ja) 2013-02-13
EP1755173A3 (en) 2007-06-20

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