CN1917241B - 一种光发射器件 - Google Patents

一种光发射器件 Download PDF

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Publication number
CN1917241B
CN1917241B CN2006101095818A CN200610109581A CN1917241B CN 1917241 B CN1917241 B CN 1917241B CN 2006101095818 A CN2006101095818 A CN 2006101095818A CN 200610109581 A CN200610109581 A CN 200610109581A CN 1917241 B CN1917241 B CN 1917241B
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China
Prior art keywords
tunnel junction
junction layer
type tunnel
layer
alloy
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Expired - Fee Related
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CN2006101095818A
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Chinese (zh)
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CN1917241A (zh
Inventor
维金奈·M·罗宾斯
史蒂文·D·莱斯特尔
杰弗里·N·米勒
戴维·P·保尔
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Avago Technologies International Sales Pte Ltd
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Avago Technologies ECBU IP Singapore Pte Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Lasers (AREA)
CN2006101095818A 2005-08-15 2006-08-14 一种光发射器件 Expired - Fee Related CN1917241B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/203,917 US7473941B2 (en) 2005-08-15 2005-08-15 Structures for reducing operating voltage in a semiconductor device
US11/203,917 2005-08-15

Publications (2)

Publication Number Publication Date
CN1917241A CN1917241A (zh) 2007-02-21
CN1917241B true CN1917241B (zh) 2010-10-06

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CN2006101095818A Expired - Fee Related CN1917241B (zh) 2005-08-15 2006-08-14 一种光发射器件

Country Status (7)

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US (1) US7473941B2 (enExample)
EP (1) EP1755173B1 (enExample)
JP (1) JP5143384B2 (enExample)
KR (1) KR101242933B1 (enExample)
CN (1) CN1917241B (enExample)
DE (1) DE602006004119D1 (enExample)
TW (1) TWI339447B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011674B2 (en) 2017-07-25 2021-05-18 Xiamen San'an Optoelectronics Co., Ltd. Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

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US20070227588A1 (en) * 2006-02-15 2007-10-04 The Regents Of The University Of California Enhanced tunnel junction for improved performance in cascaded solar cells
KR100809243B1 (ko) * 2006-04-27 2008-02-29 삼성전기주식회사 질화물막 제조방법 및 질화물 구조
JP4827706B2 (ja) * 2006-12-04 2011-11-30 シャープ株式会社 窒化物半導体発光素子
DE102007003991A1 (de) * 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip mit einem Tunnelübergang
DE102007019079A1 (de) 2007-01-26 2008-07-31 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
JP5148885B2 (ja) * 2007-01-30 2013-02-20 シャープ株式会社 窒化物半導体発光素子
TW200905928A (en) * 2007-03-29 2009-02-01 Univ California Dual surface-roughened N-face high-brightness LED
DE102007031926A1 (de) * 2007-07-09 2009-01-15 Osram Opto Semiconductors Gmbh Strahlungsemittierender Halbleiterkörper
WO2009009111A2 (en) * 2007-07-10 2009-01-15 The Board Of Trustees Of The Leland Stanford Junior University GaInNAsSB SOLAR CELLS GROWN BY MOLECULAR BEAM EPITAXY
DE102008028036A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen
US20100319764A1 (en) * 2009-06-23 2010-12-23 Solar Junction Corp. Functional Integration Of Dilute Nitrides Into High Efficiency III-V Solar Cells
US20110114163A1 (en) * 2009-11-18 2011-05-19 Solar Junction Corporation Multijunction solar cells formed on n-doped substrates
US20110232730A1 (en) 2010-03-29 2011-09-29 Solar Junction Corp. Lattice matchable alloy for solar cells
US9214580B2 (en) 2010-10-28 2015-12-15 Solar Junction Corporation Multi-junction solar cell with dilute nitride sub-cell having graded doping
US8962991B2 (en) 2011-02-25 2015-02-24 Solar Junction Corporation Pseudomorphic window layer for multijunction solar cells
US8766087B2 (en) 2011-05-10 2014-07-01 Solar Junction Corporation Window structure for solar cell
JP5678806B2 (ja) * 2011-06-07 2015-03-04 株式会社デンソー 半導体レーザ及びその製造方法
WO2013074530A2 (en) 2011-11-15 2013-05-23 Solar Junction Corporation High efficiency multijunction solar cells
TWI470826B (zh) * 2012-03-30 2015-01-21 Phostek Inc 發光二極體裝置
US9153724B2 (en) 2012-04-09 2015-10-06 Solar Junction Corporation Reverse heterojunctions for solar cells
IL225872A (en) * 2013-04-22 2015-03-31 Semi Conductor Devices An Elbit Systems Rafael Partnership Photo detector semi-conductor with barrier
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
EP3761375A1 (en) 2014-02-05 2021-01-06 Array Photonics, Inc. Monolithic multijunction power converter
JP6462456B2 (ja) * 2015-03-31 2019-01-30 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
US20170110613A1 (en) 2015-10-19 2017-04-20 Solar Junction Corporation High efficiency multijunction photovoltaic cells
JP6708442B2 (ja) * 2016-03-01 2020-06-10 学校法人 名城大学 窒化物半導体発光素子
TWI617048B (zh) * 2016-06-29 2018-03-01 光鋐科技股份有限公司 具有穿隧接合層的磊晶結構、p型半導體結構朝上的製程中間結構及其製造方法
US10930808B2 (en) 2017-07-06 2021-02-23 Array Photonics, Inc. Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
WO2019067553A1 (en) 2017-09-27 2019-04-04 Solar Junction Corporation SHORT-LENGTH WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING DILUTED NITRIDE LAYER
JP6964875B2 (ja) * 2017-11-10 2021-11-10 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP7169613B2 (ja) * 2017-11-10 2022-11-11 学校法人 名城大学 窒化物半導体発光素子の製造方法
EP3939085A1 (en) 2019-03-11 2022-01-19 Array Photonics, Inc. Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
KR102253285B1 (ko) * 2019-10-10 2021-05-18 (주)큐에스아이 반도체 레이저 다이오드 소자 및 그 제조 방법
JP7481618B2 (ja) 2020-03-30 2024-05-13 日亜化学工業株式会社 窒化物半導体素子の製造方法
CN112103352B (zh) * 2020-09-18 2022-02-01 苏州长光华芯光电技术股份有限公司 一种半导体器件及其制造方法
WO2024237161A1 (ja) * 2023-05-12 2024-11-21 住友電気工業株式会社 半導体積層体および光半導体素子

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US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device

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JPH01194379A (ja) 1988-01-29 1989-08-04 Toshiba Corp 可視光発光素子
JP3504976B2 (ja) 1994-08-26 2004-03-08 ローム株式会社 半導体発光素子
JP3461112B2 (ja) 1997-12-19 2003-10-27 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子
US6657300B2 (en) 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
US6375923B1 (en) 1999-06-24 2002-04-23 Altair Nanomaterials Inc. Processing titaniferous ore to titanium dioxide pigment
TW515116B (en) * 2001-12-27 2002-12-21 South Epitaxy Corp Light emitting diode structure
US6878975B2 (en) * 2002-02-08 2005-04-12 Agilent Technologies, Inc. Polarization field enhanced tunnel structures
US6765238B2 (en) * 2002-09-12 2004-07-20 Agilent Technologies, Inc. Material systems for semiconductor tunnel-junction structures
DE10329079B4 (de) 2003-06-27 2014-10-23 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement
JP2005123476A (ja) 2003-10-17 2005-05-12 Sharp Corp 半導体レーザ素子とその製造方法
KR20050093319A (ko) * 2004-03-18 2005-09-23 삼성전기주식회사 발광효율이 개선된 질화물 반도체 발광소자 및 그 제조방법

Patent Citations (1)

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US5825052A (en) * 1994-08-26 1998-10-20 Rohm Co., Ltd. Semiconductor light emmitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11011674B2 (en) 2017-07-25 2021-05-18 Xiamen San'an Optoelectronics Co., Ltd. Multi-layered tunnel junction structure, light emitting device having the same, and production method of such device

Also Published As

Publication number Publication date
JP2007053376A (ja) 2007-03-01
EP1755173B1 (en) 2008-12-10
KR20070020347A (ko) 2007-02-21
KR101242933B1 (ko) 2013-03-12
TW200715616A (en) 2007-04-16
US7473941B2 (en) 2009-01-06
EP1755173A2 (en) 2007-02-21
CN1917241A (zh) 2007-02-21
DE602006004119D1 (de) 2009-01-22
US20070034853A1 (en) 2007-02-15
TWI339447B (en) 2011-03-21
JP5143384B2 (ja) 2013-02-13
EP1755173A3 (en) 2007-06-20

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