JP2011523200A5 - - Google Patents

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Publication number
JP2011523200A5
JP2011523200A5 JP2011504964A JP2011504964A JP2011523200A5 JP 2011523200 A5 JP2011523200 A5 JP 2011523200A5 JP 2011504964 A JP2011504964 A JP 2011504964A JP 2011504964 A JP2011504964 A JP 2011504964A JP 2011523200 A5 JP2011523200 A5 JP 2011523200A5
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JP
Japan
Prior art keywords
region
semiconductor device
nanowire
longitudinal
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011504964A
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English (en)
Japanese (ja)
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JP2011523200A (ja
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Publication date
Application filed filed Critical
Priority claimed from PCT/SE2009/050388 external-priority patent/WO2009128777A1/en
Publication of JP2011523200A publication Critical patent/JP2011523200A/ja
Publication of JP2011523200A5 publication Critical patent/JP2011523200A5/ja
Pending legal-status Critical Current

Links

JP2011504964A 2008-04-15 2009-04-15 ナノワイヤラップゲートデバイス Pending JP2011523200A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0800853 2008-04-15
SE0800853-4 2008-04-15
PCT/SE2009/050388 WO2009128777A1 (en) 2008-04-15 2009-04-15 Nanowire wrap gate devices

Publications (2)

Publication Number Publication Date
JP2011523200A JP2011523200A (ja) 2011-08-04
JP2011523200A5 true JP2011523200A5 (enExample) 2012-06-07

Family

ID=41199335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011504964A Pending JP2011523200A (ja) 2008-04-15 2009-04-15 ナノワイヤラップゲートデバイス

Country Status (6)

Country Link
US (1) US20110089400A1 (enExample)
EP (1) EP2262723A4 (enExample)
JP (1) JP2011523200A (enExample)
KR (1) KR20100137566A (enExample)
CN (1) CN102007067A (enExample)
WO (1) WO2009128777A1 (enExample)

Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
JP5364549B2 (ja) * 2009-12-07 2013-12-11 日置電機株式会社 サーモパイル型赤外線検知素子およびその製造方法
CN102222753A (zh) * 2010-04-14 2011-10-19 中芯国际集成电路制造(上海)有限公司 Led芯片封装结构及其封装方法
JP5688751B2 (ja) * 2010-06-22 2015-03-25 日本電信電話株式会社 半導体装置
WO2012067687A2 (en) * 2010-08-26 2012-05-24 The Ohio State University Nanoscale emitters with polarization grading
FR2975532B1 (fr) * 2011-05-18 2013-05-10 Commissariat Energie Atomique Connexion electrique en serie de nanofils emetteurs de lumiere
EP2670702A1 (en) * 2011-02-01 2013-12-11 QuNano AB Nanowire device for manipulating charged molecules
FR2976123B1 (fr) * 2011-06-01 2013-07-05 Commissariat Energie Atomique Structure semiconductrice destinee a emettre de la lumiere et procede de fabrication d'une telle structure
CN104603952B (zh) 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
FR2999806A1 (fr) 2012-12-19 2014-06-20 Commissariat Energie Atomique Procede de fabrication d'une structure, notamment de type mis, en particulier pour diode electroluminescente.
WO2014138904A1 (en) * 2013-03-14 2014-09-18 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
JP6551849B2 (ja) * 2014-02-18 2019-07-31 国立大学法人九州大学 半導体単結晶、及びこれを用いた発電方法
FR3023065B1 (fr) * 2014-06-27 2017-12-15 Commissariat Energie Atomique Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ
KR102373620B1 (ko) 2015-09-30 2022-03-11 삼성전자주식회사 반도체 장치
US9627478B1 (en) * 2015-12-10 2017-04-18 International Business Machines Corporation Integrated vertical nanowire memory
TWI604605B (zh) * 2016-12-15 2017-11-01 國立交通大學 半導體裝置及其製造方法
US9847391B1 (en) * 2017-04-05 2017-12-19 Globalfoundries Inc. Stacked nanosheet field-effect transistor with diode isolation
US10665669B1 (en) 2019-02-26 2020-05-26 Globalfoundries Inc. Insulative structure with diffusion break integral with isolation layer and methods to form same
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
GB2601373B (en) 2020-11-30 2023-10-11 Plessey Semiconductors Ltd Voltage-controllable monolithic native RGB arrays

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JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
KR100679547B1 (ko) * 1999-02-22 2007-02-07 조셉 이. 쥬니어 클로손 극미세구조 소자 및 장치
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
KR101132076B1 (ko) * 2003-08-04 2012-04-02 나노시스, 인크. 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스
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EP1901354B1 (en) * 2006-09-15 2016-08-24 Imec A tunnel field-effect transistor with gated tunnel barrier
EP2064744A2 (en) * 2006-09-19 2009-06-03 QuNano AB Assembly of nanoscaled field effect transistors
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier

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