KR20100137566A - 나노와이어 랩 게이트 디바이스들 - Google Patents

나노와이어 랩 게이트 디바이스들 Download PDF

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Publication number
KR20100137566A
KR20100137566A KR1020107025532A KR20107025532A KR20100137566A KR 20100137566 A KR20100137566 A KR 20100137566A KR 1020107025532 A KR1020107025532 A KR 1020107025532A KR 20107025532 A KR20107025532 A KR 20107025532A KR 20100137566 A KR20100137566 A KR 20100137566A
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South Korea
Prior art keywords
region
nanowire
longitudinal
nanowires
gate electrode
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KR1020107025532A
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English (en)
Korean (ko)
Inventor
요나스 올손
라르스 사무엘손
에릭 린트
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큐나노 에이비
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020107025532A 2008-04-15 2009-04-15 나노와이어 랩 게이트 디바이스들 Withdrawn KR20100137566A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0800853 2008-04-15
SE0800853-4 2008-04-15

Publications (1)

Publication Number Publication Date
KR20100137566A true KR20100137566A (ko) 2010-12-30

Family

ID=41199335

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107025532A Withdrawn KR20100137566A (ko) 2008-04-15 2009-04-15 나노와이어 랩 게이트 디바이스들

Country Status (6)

Country Link
US (1) US20110089400A1 (enExample)
EP (1) EP2262723A4 (enExample)
JP (1) JP2011523200A (enExample)
KR (1) KR20100137566A (enExample)
CN (1) CN102007067A (enExample)
WO (1) WO2009128777A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP5364549B2 (ja) * 2009-12-07 2013-12-11 日置電機株式会社 サーモパイル型赤外線検知素子およびその製造方法
CN102222753A (zh) * 2010-04-14 2011-10-19 中芯国际集成电路制造(上海)有限公司 Led芯片封装结构及其封装方法
JP5688751B2 (ja) * 2010-06-22 2015-03-25 日本電信電話株式会社 半導体装置
WO2012067687A2 (en) * 2010-08-26 2012-05-24 The Ohio State University Nanoscale emitters with polarization grading
FR2975532B1 (fr) * 2011-05-18 2013-05-10 Commissariat Energie Atomique Connexion electrique en serie de nanofils emetteurs de lumiere
EP2670702A1 (en) * 2011-02-01 2013-12-11 QuNano AB Nanowire device for manipulating charged molecules
FR2976123B1 (fr) * 2011-06-01 2013-07-05 Commissariat Energie Atomique Structure semiconductrice destinee a emettre de la lumiere et procede de fabrication d'une telle structure
CN104603952B (zh) 2012-07-06 2017-07-21 昆南诺股份有限公司 径向纳米线江崎二极管装置和方法
FR2999806A1 (fr) 2012-12-19 2014-06-20 Commissariat Energie Atomique Procede de fabrication d'une structure, notamment de type mis, en particulier pour diode electroluminescente.
WO2014138904A1 (en) * 2013-03-14 2014-09-18 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
JP6551849B2 (ja) * 2014-02-18 2019-07-31 国立大学法人九州大学 半導体単結晶、及びこれを用いた発電方法
FR3023065B1 (fr) * 2014-06-27 2017-12-15 Commissariat Energie Atomique Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ
KR102373620B1 (ko) 2015-09-30 2022-03-11 삼성전자주식회사 반도체 장치
US9627478B1 (en) * 2015-12-10 2017-04-18 International Business Machines Corporation Integrated vertical nanowire memory
TWI604605B (zh) * 2016-12-15 2017-11-01 國立交通大學 半導體裝置及其製造方法
US9847391B1 (en) * 2017-04-05 2017-12-19 Globalfoundries Inc. Stacked nanosheet field-effect transistor with diode isolation
US10665669B1 (en) 2019-02-26 2020-05-26 Globalfoundries Inc. Insulative structure with diffusion break integral with isolation layer and methods to form same
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
GB2601373B (en) 2020-11-30 2023-10-11 Plessey Semiconductors Ltd Voltage-controllable monolithic native RGB arrays

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JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
KR100679547B1 (ko) * 1999-02-22 2007-02-07 조셉 이. 쥬니어 클로손 극미세구조 소자 및 장치
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
US7335908B2 (en) * 2002-07-08 2008-02-26 Qunano Ab Nanostructures and methods for manufacturing the same
WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
KR101132076B1 (ko) * 2003-08-04 2012-04-02 나노시스, 인크. 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스
DE102004005363A1 (de) * 2004-02-03 2005-09-08 Forschungszentrum Jülich GmbH Halbleiter-Struktur
JP5255437B2 (ja) * 2005-06-16 2013-08-07 クナノ アーベー 半導体ナノワイヤトランジスタ
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
JP2007184566A (ja) * 2005-12-06 2007-07-19 Canon Inc 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置
EP1804286A1 (en) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
DE102006009721B4 (de) * 2006-03-02 2011-08-18 Qimonda AG, 81739 Nanodraht (Nanowire)-Speicherzelle und Verfahren zu deren Herstellung
EP1901354B1 (en) * 2006-09-15 2016-08-24 Imec A tunnel field-effect transistor with gated tunnel barrier
EP2064744A2 (en) * 2006-09-19 2009-06-03 QuNano AB Assembly of nanoscaled field effect transistors
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier

Also Published As

Publication number Publication date
US20110089400A1 (en) 2011-04-21
JP2011523200A (ja) 2011-08-04
CN102007067A (zh) 2011-04-06
EP2262723A1 (en) 2010-12-22
WO2009128777A1 (en) 2009-10-22
EP2262723A4 (en) 2014-05-14

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PA0105 International application

Patent event date: 20101112

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid