CN102007067A - 纳米线围栅装置 - Google Patents

纳米线围栅装置 Download PDF

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Publication number
CN102007067A
CN102007067A CN2009801142030A CN200980114203A CN102007067A CN 102007067 A CN102007067 A CN 102007067A CN 2009801142030 A CN2009801142030 A CN 2009801142030A CN 200980114203 A CN200980114203 A CN 200980114203A CN 102007067 A CN102007067 A CN 102007067A
Authority
CN
China
Prior art keywords
region
nanowire
semiconductor device
surrounding gate
lengthwise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2009801142030A
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English (en)
Chinese (zh)
Inventor
J·奥尔森
L·萨穆尔森
E·林德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BTG International Ltd
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BTG International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BTG International Ltd filed Critical BTG International Ltd
Publication of CN102007067A publication Critical patent/CN102007067A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/062—Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CN2009801142030A 2008-04-15 2009-04-15 纳米线围栅装置 Pending CN102007067A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0800853-4 2008-04-15
SE0800853 2008-04-15
PCT/SE2009/050388 WO2009128777A1 (en) 2008-04-15 2009-04-15 Nanowire wrap gate devices

Publications (1)

Publication Number Publication Date
CN102007067A true CN102007067A (zh) 2011-04-06

Family

ID=41199335

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801142030A Pending CN102007067A (zh) 2008-04-15 2009-04-15 纳米线围栅装置

Country Status (6)

Country Link
US (1) US20110089400A1 (enExample)
EP (1) EP2262723A4 (enExample)
JP (1) JP2011523200A (enExample)
KR (1) KR20100137566A (enExample)
CN (1) CN102007067A (enExample)
WO (1) WO2009128777A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620784A (zh) * 2011-05-18 2014-03-05 原子能与可替代能源委员会 发光纳米线的串联电连接

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* Cited by examiner, † Cited by third party
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JP5364549B2 (ja) * 2009-12-07 2013-12-11 日置電機株式会社 サーモパイル型赤外線検知素子およびその製造方法
CN102222753A (zh) * 2010-04-14 2011-10-19 中芯国际集成电路制造(上海)有限公司 Led芯片封装结构及其封装方法
JP5688751B2 (ja) * 2010-06-22 2015-03-25 日本電信電話株式会社 半導体装置
WO2012067687A2 (en) * 2010-08-26 2012-05-24 The Ohio State University Nanoscale emitters with polarization grading
WO2012105900A1 (en) * 2011-02-01 2012-08-09 Qunano Ab Nanowire device for manipulating charged molecules
FR2976123B1 (fr) 2011-06-01 2013-07-05 Commissariat Energie Atomique Structure semiconductrice destinee a emettre de la lumiere et procede de fabrication d'une telle structure
US10090292B2 (en) 2012-07-06 2018-10-02 Qunano Ab Radial nanowire Esaki diode devices and methods
FR2999806A1 (fr) 2012-12-19 2014-06-20 Commissariat Energie Atomique Procede de fabrication d'une structure, notamment de type mis, en particulier pour diode electroluminescente.
WO2014138904A1 (en) * 2013-03-14 2014-09-18 The Royal Institution For The Advancement Of Learning/Mcgill University Methods and devices for solid state nanowire devices
GB2518679A (en) 2013-09-30 2015-04-01 Ibm Reconfigurable tunnel field-effect transistors
US9257527B2 (en) 2014-02-14 2016-02-09 International Business Machines Corporation Nanowire transistor structures with merged source/drain regions using auxiliary pillars
JP6551849B2 (ja) * 2014-02-18 2019-07-31 国立大学法人九州大学 半導体単結晶、及びこれを用いた発電方法
FR3023065B1 (fr) 2014-06-27 2017-12-15 Commissariat Energie Atomique Dispositif optoelectronique a jonction p-n permettant une ionisation de dopants par effet de champ
KR102373620B1 (ko) 2015-09-30 2022-03-11 삼성전자주식회사 반도체 장치
US9627478B1 (en) * 2015-12-10 2017-04-18 International Business Machines Corporation Integrated vertical nanowire memory
TWI604605B (zh) * 2016-12-15 2017-11-01 國立交通大學 半導體裝置及其製造方法
US9847391B1 (en) * 2017-04-05 2017-12-19 Globalfoundries Inc. Stacked nanosheet field-effect transistor with diode isolation
US10665669B1 (en) 2019-02-26 2020-05-26 Globalfoundries Inc. Insulative structure with diffusion break integral with isolation layer and methods to form same
FR3096508A1 (fr) * 2019-05-21 2020-11-27 Aledia Dispositif optoélectronique à diodes électroluminescentes
GB2601373B (en) * 2020-11-30 2023-10-11 Plessey Semiconductors Ltd Voltage-controllable monolithic native RGB arrays

Citations (6)

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WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
CN1681975A (zh) * 2002-07-08 2005-10-12 Btg国际有限公司 纳米结构及其制造方法
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1804286A1 (en) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
DE102006009721A1 (de) * 2006-03-02 2007-09-06 Infineon Technologies Ag Nanowire-Speicherzelle
WO2008034850A2 (en) * 2006-09-19 2008-03-27 Qunano Ab Assembly of nanoscaled field effect transistors

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JPH0425175A (ja) * 1990-05-21 1992-01-28 Canon Inc ダイオード
KR100636951B1 (ko) * 1999-02-22 2006-10-19 조셉 이. 쥬니어 클로손 극미세구조 소자 및 장치
US7385262B2 (en) * 2001-11-27 2008-06-10 The Board Of Trustees Of The Leland Stanford Junior University Band-structure modulation of nano-structures in an electric field
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
EP1652218A2 (en) * 2003-08-04 2006-05-03 Nanosys, Inc. System and process for producing nanowire composites and electronic substrates therefrom
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WO2006135337A1 (en) * 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire vertical device architecture
JP2007184566A (ja) * 2005-12-06 2007-07-19 Canon Inc 半導体ナノワイヤを用いた半導体素子、それを用いた表示装置及び撮像装置
EP1901354B1 (en) * 2006-09-15 2016-08-24 Imec A tunnel field-effect transistor with gated tunnel barrier
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier

Patent Citations (6)

* Cited by examiner, † Cited by third party
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CN1681975A (zh) * 2002-07-08 2005-10-12 Btg国际有限公司 纳米结构及其制造方法
WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
US20070052012A1 (en) * 2005-08-24 2007-03-08 Micron Technology, Inc. Vertical tunneling nano-wire transistor
EP1804286A1 (en) * 2005-12-27 2007-07-04 Interuniversitair Microelektronica Centrum Elongate nanostructure semiconductor device
DE102006009721A1 (de) * 2006-03-02 2007-09-06 Infineon Technologies Ag Nanowire-Speicherzelle
WO2008034850A2 (en) * 2006-09-19 2008-03-27 Qunano Ab Assembly of nanoscaled field effect transistors

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103620784A (zh) * 2011-05-18 2014-03-05 原子能与可替代能源委员会 发光纳米线的串联电连接
CN103620784B (zh) * 2011-05-18 2016-10-12 原子能与可替代能源委员会 发光纳米线的串联电连接

Also Published As

Publication number Publication date
JP2011523200A (ja) 2011-08-04
US20110089400A1 (en) 2011-04-21
KR20100137566A (ko) 2010-12-30
EP2262723A1 (en) 2010-12-22
EP2262723A4 (en) 2014-05-14
WO2009128777A1 (en) 2009-10-22

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Application publication date: 20110406