JP2006507692A5 - - Google Patents

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Publication number
JP2006507692A5
JP2006507692A5 JP2005500333A JP2005500333A JP2006507692A5 JP 2006507692 A5 JP2006507692 A5 JP 2006507692A5 JP 2005500333 A JP2005500333 A JP 2005500333A JP 2005500333 A JP2005500333 A JP 2005500333A JP 2006507692 A5 JP2006507692 A5 JP 2006507692A5
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JP
Japan
Prior art keywords
semiconductor device
nanowire
nanowires
thin film
electrode
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JP2005500333A
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English (en)
Japanese (ja)
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JP2006507692A (ja
JP5336031B2 (ja
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Priority claimed from PCT/US2003/030721 external-priority patent/WO2004032193A2/en
Publication of JP2006507692A publication Critical patent/JP2006507692A/ja
Publication of JP2006507692A5 publication Critical patent/JP2006507692A5/ja
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Publication of JP5336031B2 publication Critical patent/JP5336031B2/ja
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JP2005500333A 2002-09-30 2003-09-30 大面積ナノ可能マクロエレクトロニクス基板およびその使用 Expired - Fee Related JP5336031B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41432302P 2002-09-30 2002-09-30
US41435902P 2002-09-30 2002-09-30
US60/414,359 2002-09-30
US60/414,323 2002-09-30
US46827603P 2003-05-07 2003-05-07
US60/468,276 2003-05-07
US47406503P 2003-05-29 2003-05-29
US60/474,065 2003-05-29
US48880103P 2003-07-22 2003-07-22
US60/488,801 2003-07-22
PCT/US2003/030721 WO2004032193A2 (en) 2002-09-30 2003-09-30 Large-area nanoenabled macroelectronic substrates and uses therefor

Related Child Applications (1)

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JP2011015801A Division JP2011101047A (ja) 2002-09-30 2011-01-27 大面積ナノ可能マクロエレクトロニクス基板およびその使用

Publications (3)

Publication Number Publication Date
JP2006507692A JP2006507692A (ja) 2006-03-02
JP2006507692A5 true JP2006507692A5 (enExample) 2006-11-24
JP5336031B2 JP5336031B2 (ja) 2013-11-06

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ID=32074780

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2005500333A Expired - Fee Related JP5336031B2 (ja) 2002-09-30 2003-09-30 大面積ナノ可能マクロエレクトロニクス基板およびその使用
JP2011015801A Withdrawn JP2011101047A (ja) 2002-09-30 2011-01-27 大面積ナノ可能マクロエレクトロニクス基板およびその使用
JP2014184819A Expired - Lifetime JP6047533B2 (ja) 2002-09-30 2014-09-11 大面積ナノ可能マクロエレクトロニクス基板およびその使用
JP2016185264A Pending JP2016225659A (ja) 2002-09-30 2016-09-23 大面積ナノ可能マクロエレクトロニクス基板およびその使用

Family Applications After (3)

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JP2011015801A Withdrawn JP2011101047A (ja) 2002-09-30 2011-01-27 大面積ナノ可能マクロエレクトロニクス基板およびその使用
JP2014184819A Expired - Lifetime JP6047533B2 (ja) 2002-09-30 2014-09-11 大面積ナノ可能マクロエレクトロニクス基板およびその使用
JP2016185264A Pending JP2016225659A (ja) 2002-09-30 2016-09-23 大面積ナノ可能マクロエレクトロニクス基板およびその使用

Country Status (8)

Country Link
US (2) US8030186B2 (enExample)
EP (2) EP2194026A1 (enExample)
JP (4) JP5336031B2 (enExample)
KR (1) KR101191632B1 (enExample)
AU (1) AU2003283973B2 (enExample)
CA (1) CA2499965C (enExample)
TW (1) TWI309845B (enExample)
WO (1) WO2004032193A2 (enExample)

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002017362A2 (en) 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
EP1342075B1 (en) 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
KR101191632B1 (ko) * 2002-09-30 2012-10-17 나노시스, 인크. 대형 나노 인에이블 매크로전자 기판 및 그 사용
KR101132076B1 (ko) 2003-08-04 2012-04-02 나노시스, 인크. 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
KR101185613B1 (ko) 2004-04-27 2012-09-24 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 소프트 리소그래피용 복합 패터닝 장치
JP2007535413A (ja) 2004-04-30 2007-12-06 ナノシス・インコーポレイテッド ナノワイヤ成長および採取のための系および方法
US20050279274A1 (en) 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
CN101120433B (zh) 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
WO2006078281A2 (en) 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US7365395B2 (en) * 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
JP2008515654A (ja) * 2004-10-12 2008-05-15 ナノシス・インク. 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス
JP2008523590A (ja) * 2004-12-06 2008-07-03 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ ナノスケールワイヤベースのデータ格納装置
WO2006070670A1 (ja) 2004-12-28 2006-07-06 Matsushita Electric Industrial Co., Ltd. 半導体ナノワイヤ、および当該ナノワイヤを備えた半導体装置
US20060169585A1 (en) * 2005-01-31 2006-08-03 Nagahara Larry A Carbon nanotube sensor
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR101109623B1 (ko) 2005-04-07 2012-01-31 엘지디스플레이 주식회사 박막트랜지스터와 그 제조방법.
WO2006113207A2 (en) * 2005-04-13 2006-10-26 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
JP5255437B2 (ja) * 2005-06-16 2013-08-07 クナノ アーベー 半導体ナノワイヤトランジスタ
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
KR101106134B1 (ko) * 2005-07-11 2012-01-20 서울옵토디바이스주식회사 나노와이어 형광체를 채택한 발광소자
JP5116961B2 (ja) * 2005-09-29 2013-01-09 国立大学法人名古屋大学 カーボンナノウォールを用いたダイオード
WO2007037343A1 (ja) * 2005-09-29 2007-04-05 Nu Eco Engineering Co., Ltd. カーボンナノ構造体を用いたダイオード及び光起電力素子
WO2007089322A2 (en) * 2005-11-23 2007-08-09 William Marsh Rice University PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS
EP1791186A1 (en) 2005-11-25 2007-05-30 Stormled AB Light emitting diode and method for manufacturing the same
KR101232050B1 (ko) * 2005-12-31 2013-02-15 엘지디스플레이 주식회사 액정표시소자 제조방법
WO2007083570A1 (ja) * 2006-01-16 2007-07-26 Matsushita Electric Industrial Co., Ltd. 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
JP4574634B2 (ja) * 2006-04-03 2010-11-04 キヤノン株式会社 シリコンワイヤを含み構成される物品の製造方法
JP5060740B2 (ja) * 2006-05-26 2012-10-31 シャープ株式会社 集積回路装置およびその製造方法、ならびに表示装置
AU2007309660A1 (en) 2006-06-12 2008-05-02 President And Fellows Of Harvard College Nanosensors and related technologies
JP5312938B2 (ja) * 2006-06-21 2013-10-09 パナソニック株式会社 電界効果トランジスタ
JP2008066557A (ja) * 2006-09-08 2008-03-21 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
WO2008057558A2 (en) 2006-11-07 2008-05-15 Nanosys, Inc. Systems and methods for nanowire growth
KR100819004B1 (ko) 2006-11-15 2008-04-02 삼성전자주식회사 미세 전자 소자 및 그 제조 방법
WO2008059940A1 (en) * 2006-11-17 2008-05-22 Semiconductor Energy Laboratory Co., Ltd. Memory element and method for manufacturing the same, and semiconductor device
EP2095100B1 (en) 2006-11-22 2016-09-21 President and Fellows of Harvard College Method of operating a nanowire field effect transistor sensor
CN105826345B (zh) 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
KR101356694B1 (ko) * 2007-05-10 2014-01-29 삼성전자주식회사 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법
KR100857542B1 (ko) 2007-07-19 2008-09-08 삼성전자주식회사 탄소 나노튜브 발광소자 및 그 제조방법
DE102007043360A1 (de) * 2007-09-12 2009-03-19 Forschungszentrum Karlsruhe Gmbh Elektronisches Bauelement, Verfahren zu seiner Herstellung und seine Verwendung
AU2008307486B2 (en) * 2007-10-02 2014-08-14 President And Fellows Of Harvard College Carbon nanotube synthesis for nanopore devices
WO2009087793A1 (ja) * 2008-01-11 2009-07-16 National Institute Of Japan Science And Technology Agency 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第2中間体
KR101475520B1 (ko) 2008-01-14 2014-12-23 삼성전자주식회사 잉크젯 프린트용 양자점 잉크 조성물 및 그를 이용한전자소자
KR101006823B1 (ko) * 2008-01-29 2011-01-12 연세대학교 산학협력단 나노 와이어가 함입된 고분자 박막 구조체의 제조 방법
KR101424816B1 (ko) * 2008-02-18 2014-07-31 삼성전자주식회사 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
GB2459251A (en) 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
CN101587839B (zh) 2008-05-23 2011-12-21 清华大学 薄膜晶体管的制备方法
CN101582447B (zh) 2008-05-14 2010-09-29 清华大学 薄膜晶体管
CN101582445B (zh) 2008-05-14 2012-05-16 清华大学 薄膜晶体管
CN101593699B (zh) 2008-05-30 2010-11-10 清华大学 薄膜晶体管的制备方法
CN101582448B (zh) 2008-05-14 2012-09-19 清华大学 薄膜晶体管
CN101582382B (zh) 2008-05-14 2011-03-23 鸿富锦精密工业(深圳)有限公司 薄膜晶体管的制备方法
CN101582449B (zh) 2008-05-14 2011-12-14 清华大学 薄膜晶体管
CN101582446B (zh) 2008-05-14 2011-02-02 鸿富锦精密工业(深圳)有限公司 薄膜晶体管
CN101582444A (zh) 2008-05-14 2009-11-18 清华大学 薄膜晶体管
CN101582450B (zh) 2008-05-16 2012-03-28 清华大学 薄膜晶体管
US8946683B2 (en) 2008-06-16 2015-02-03 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
EP2304802B8 (en) * 2008-07-18 2013-12-04 Panasonic Corporation Semiconductor material
US8546742B2 (en) * 2009-06-04 2013-10-01 Zena Technologies, Inc. Array of nanowires in a single cavity with anti-reflective coating on substrate
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US20110234345A1 (en) * 2008-11-28 2011-09-29 Hiroshi Onodera Combined magnetic body, combined magnetic body production method, combined magnetic body injection apparatus, combined magnetic body injection control system, magnetic field control apparatus and combined magnetic body injection control method
KR20110097957A (ko) * 2008-12-18 2011-08-31 퍼스트 솔라, 인코포레이티드 후방 금속 컨택트를 포함하는 광기전 장치
US8865489B2 (en) 2009-05-12 2014-10-21 The Board Of Trustees Of The University Of Illinois Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays
WO2010138506A1 (en) 2009-05-26 2010-12-02 Nanosys, Inc. Methods and systems for electric field deposition of nanowires and other devices
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
WO2011038228A1 (en) 2009-09-24 2011-03-31 President And Fellows Of Harvard College Bent nanowires and related probing of species
US9723122B2 (en) 2009-10-01 2017-08-01 Mc10, Inc. Protective cases with integrated electronics
JP4996660B2 (ja) * 2009-10-15 2012-08-08 シャープ株式会社 発光装置およびその製造方法
JP5094824B2 (ja) * 2009-10-19 2012-12-12 シャープ株式会社 棒状構造発光素子、バックライト、照明装置および表示装置
JP5014403B2 (ja) * 2009-11-19 2012-08-29 シャープ株式会社 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置
JP4887414B2 (ja) * 2009-10-19 2012-02-29 シャープ株式会社 発光装置、バックライト、照明装置および表示装置
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP4912448B2 (ja) * 2009-10-22 2012-04-11 シャープ株式会社 発光装置およびその製造方法
KR101588318B1 (ko) * 2009-11-23 2016-01-25 삼성전자주식회사 튜브형 압전 에너지 발생 장치 및 그 제조방법
JP5256176B2 (ja) * 2009-11-25 2013-08-07 シャープ株式会社 基板へのナノ構造体の塗布方法及びその装置
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (en) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Electrophysiology using conformal electronics
JP4814394B2 (ja) * 2010-03-05 2011-11-16 シャープ株式会社 発光装置の製造方法
WO2011111516A1 (ja) * 2010-03-12 2011-09-15 シャープ株式会社 発光装置の製造方法、発光装置、照明装置、バックライト、液晶パネル、表示装置、表示装置の製造方法、表示装置の駆動方法および液晶表示装置
JP4848464B2 (ja) * 2010-03-12 2011-12-28 シャープ株式会社 発光装置の製造方法
JP2011211047A (ja) * 2010-03-30 2011-10-20 Sharp Corp 表示装置、表示装置の製造方法および表示装置の駆動方法
JP5616659B2 (ja) * 2010-03-19 2014-10-29 シャープ株式会社 液晶表示装置
EP2547258B1 (en) 2010-03-17 2015-08-05 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
JP2011198697A (ja) * 2010-03-23 2011-10-06 Sharp Corp 発光装置、発光装置の製造方法、照明装置およびバックライト
FR2959867B1 (fr) * 2010-05-05 2013-08-16 Commissariat Energie Atomique Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif
KR101359349B1 (ko) * 2010-05-12 2014-02-11 전자부품연구원 나노 와이어 복합체 및 이를 이용한 바이오 센서
US8394710B2 (en) * 2010-06-21 2013-03-12 International Business Machines Corporation Semiconductor devices fabricated by doped material layer as dopant source
WO2012097163A1 (en) 2011-01-14 2012-07-19 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
US20130333738A1 (en) * 2011-03-04 2013-12-19 Kouji Suemori Thermoelectric conversion material, and flexible thermoelectric conversion element using the same
JP2014123583A (ja) * 2011-04-11 2014-07-03 Sharp Corp 発光装置、発光装置の製造方法、照明装置、バックライトおよび表示装置
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
WO2012167096A2 (en) 2011-06-03 2012-12-06 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
US8356262B1 (en) * 2011-06-22 2013-01-15 Taiwan Semiconductor Manufacturing Co., Ltd. Cell architecture and method
JP2013021165A (ja) * 2011-07-12 2013-01-31 Sony Corp 蒸着用マスク、蒸着用マスクの製造方法、電子素子および電子素子の製造方法
US8852998B1 (en) * 2011-08-30 2014-10-07 Sandia Corporation Method to fabricate micro and nano diamond devices
JP5422628B2 (ja) * 2011-10-17 2014-02-19 シャープ株式会社 発光装置の製造方法
AU2012340870B2 (en) * 2011-11-22 2015-07-30 Siemens Healthcare Diagnostics Inc. Interdigitated array and method of manufacture
WO2013089867A2 (en) 2011-12-01 2013-06-20 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
US8575009B2 (en) * 2012-03-08 2013-11-05 International Business Machines Corporation Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US9237646B2 (en) * 2012-05-14 2016-01-12 The Hong Kong University Of Science And Technology Electrical and thermal conductive thin film with double layer structure provided as a one-dimensional nanomaterial network with graphene/graphene oxide coating
US8727112B2 (en) * 2012-06-18 2014-05-20 Innova Dynamics, Inc. Agglomerate reduction in a nanowire suspension stored in a container
US20140034905A1 (en) 2012-08-01 2014-02-06 International Business Machines Corporation Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width
JP6122598B2 (ja) * 2012-09-27 2017-04-26 シャープ株式会社 Ledプリントヘッド
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US10376146B2 (en) 2013-02-06 2019-08-13 California Institute Of Technology Miniaturized implantable electrochemical sensor devices
EP2932526A4 (en) * 2012-12-13 2016-10-19 California Inst Of Techn PREPARATION OF ELECTRODES WITH THREE-DIMENSIONAL LARGE SURFACE
US8994077B2 (en) 2012-12-21 2015-03-31 International Business Machines Corporation Field effect transistor-based bio sensor
JPWO2014126211A1 (ja) * 2013-02-15 2017-02-02 国立大学法人 奈良先端科学技術大学院大学 n型熱電変換材料および熱電変換素子、ならびにn型熱電変換材料の製造方法
US20200191655A1 (en) * 2018-12-15 2020-06-18 William N. Carr Photonic- and Phononic-structured pixel for electromagnetic radiation and detection
US9429769B2 (en) * 2013-05-09 2016-08-30 Johnson & Johnson Vision Care, Inc. Ophthalmic device with thin film nanocrystal integrated circuits
WO2014189769A1 (en) * 2013-05-21 2014-11-27 The Regents Of The University Of California Metals-semiconductor nanowire composites
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
US8863311B1 (en) * 2013-07-18 2014-10-14 National Taiwan University Radio-frequency reflectometry scanning tunneling microscope
JP6256912B2 (ja) * 2013-11-12 2018-01-10 国立研究開発法人産業技術総合研究所 カーボンナノチューブ集合体を用いた電界効果トランジスタ
US9455421B2 (en) 2013-11-21 2016-09-27 Atom Nanoelectronics, Inc. Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays
US9287516B2 (en) * 2014-04-07 2016-03-15 International Business Machines Corporation Forming pn junction contacts by different dielectrics
US9917240B2 (en) 2014-07-24 2018-03-13 Samsung Electronics Co., Ltd. Thermoelectric element, method of manufacturing the same and semiconductor device including the same
JP6637505B2 (ja) * 2014-12-29 2020-01-29 ジョージア テック リサーチ コーポレイション 機能性ナノ構造体を連続して大規模に製造する方法
EP3054486B1 (en) * 2015-02-04 2021-07-07 Nokia Technologies Oy A field-effect apparatus, associated apparatus and methods
CN107923988A (zh) 2015-06-01 2018-04-17 伊利诺伊大学评议会 Uv感测的替代方法
KR20180033468A (ko) 2015-06-01 2018-04-03 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 무선 전력 및 근거리 통신기능을 갖는 소형화된 전자 시스템
WO2017004055A1 (en) 2015-07-02 2017-01-05 Sabic Global Technologies B.V. Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof
US10368788B2 (en) 2015-07-23 2019-08-06 California Institute Of Technology System and methods for wireless drug delivery on command
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
WO2017085606A1 (en) 2015-11-17 2017-05-26 Sabic Global Technologies B.V. Porous polymer nanocomposites with ordered and tunable crystalline and amorphous phase domains
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
US10505094B2 (en) * 2015-12-29 2019-12-10 Massachusetts Institute Of Technology Superconducting nanowire avalanche photodetectors with reduced current crowding
US11231382B2 (en) 2016-06-15 2022-01-25 William N. Carr Integrated thermal sensor comprising a photonic crystal
US11300453B2 (en) 2017-06-18 2022-04-12 William N. Carr Photonic- and phononic-structured pixel for electromagnetic radiation and detection
CN107564948B (zh) * 2016-07-01 2021-01-05 清华大学 纳米异质结构及纳米晶体管的制备方法
JP6893344B2 (ja) * 2016-10-18 2021-06-23 国立研究開発法人物質・材料研究機構 銅ガリウムテルル系p型熱電半導体、及びそれを用いた熱電発電素子
CN108336142B (zh) * 2017-01-20 2020-09-25 清华大学 薄膜晶体管
EP3373347A1 (en) 2017-03-09 2018-09-12 Riccardo Raccis Conversion material
US10873026B2 (en) * 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
US10847757B2 (en) 2017-05-04 2020-11-24 Carbon Nanotube Technologies, Llc Carbon enabled vertical organic light emitting transistors
US10978640B2 (en) 2017-05-08 2021-04-13 Atom H2O, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US20190011477A1 (en) * 2017-06-26 2019-01-10 William N. Carr Convective inertial accelerometer with metamaterial thermal structure
CN109428008B (zh) * 2017-08-30 2020-01-07 清华大学 有机发光二极管的制备方法
DE112019000577T5 (de) * 2018-01-29 2020-11-12 Massachusetts Institute Of Technology Back-gate-feldeffekttransistoren und verfahren zu deren herstellung
CN110118725B (zh) * 2018-02-07 2021-08-31 清华大学 光电流扫描系统
US11451189B1 (en) 2018-02-16 2022-09-20 The United States Of America As Represented By The Secretary Of The Navy Method for improving mechanical integrity of crystalline silicon solar cells
US11561195B2 (en) 2018-06-08 2023-01-24 Massachusetts Institute Of Technology Monolithic 3D integrated circuit for gas sensing and method of making and system using
KR20180077114A (ko) * 2018-06-22 2018-07-06 피에스아이 주식회사 전기적 컨택이 향상된 초소형 led 전극 어셈블리
JP7209952B2 (ja) * 2018-07-05 2023-01-23 一般財団法人ファインセラミックスセンター 強誘電体ナノ粒子集積方法及び電子部品の製造方法
US10749036B2 (en) * 2018-08-03 2020-08-18 Shenzhen China Star Optoelectronics Technology Co., Ltd. Oxide semiconductor thin film transistor having spaced channel and barrier strips and manufacturing method thereof
WO2020086181A2 (en) 2018-09-10 2020-04-30 Massachusetts Institute Of Technology Systems and methods for designing integrated circuits
CN112840448B (zh) 2018-09-24 2024-10-11 麻省理工学院 通过工程化原子层沉积对碳纳米管的可调掺杂
KR20210134616A (ko) 2019-01-04 2021-11-10 아톰 에이치투오, 엘엘씨 탄소 나노튜브 기반 무선 주파수 장치
US20220102583A1 (en) * 2019-01-29 2022-03-31 Osram Opto Semiconductors Gmbh µ-LED, µ-LED DEVICE, DISPLAY AND METHOD FOR THE SAME
US11016055B2 (en) * 2019-07-09 2021-05-25 Globalfoundries Singapore Pte. Ltd. Sensors with a front-end-of-line solution-receiving cavity
CN114222902A (zh) * 2019-10-10 2022-03-22 索尼半导体解决方案公司 电磁波检测装置、电磁波检测系统和电磁波检测方法
KR20220161354A (ko) * 2020-03-31 2022-12-06 페킹 유니버시티 기판 및 나노구조체 어레이들 상에 나노구조체들을 퇴적시키는 방법
WO2021237182A1 (en) * 2020-05-22 2021-11-25 Roswell Biotechnologies, Inc. Shape-altered graphene nanobridge array, transfer-aligned for biomolecular sensing and information storage
KR102812357B1 (ko) * 2020-10-16 2025-05-23 삼성전자주식회사 반도체 소자 및 그 동작방법
US12328895B2 (en) 2023-06-20 2025-06-10 Ideaded, S.L. Vertical field effect device and method of manufacturing

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267872A (ja) * 1985-09-20 1987-03-27 Toshiba Corp 非晶質シリコン薄膜トランジスタ
US4769683A (en) * 1987-06-22 1988-09-06 Motorola Inc. Superlattice gate field effect transistor
US4817842A (en) * 1988-01-29 1989-04-04 International Business Machines Corporation Door and spring assembly for a paper feed mechanism
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5274602A (en) * 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
JPH07109881B2 (ja) * 1993-03-22 1995-11-22 株式会社日立製作所 量子細線導波路
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
JP3165324B2 (ja) * 1994-04-13 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0661733A2 (en) * 1993-12-21 1995-07-05 International Business Machines Corporation One dimensional silicon quantum wire devices and the method of manufacture thereof
US5581091A (en) * 1994-12-01 1996-12-03 Moskovits; Martin Nanoelectric devices
CA2183638C (en) * 1995-03-20 2001-03-20 Tajima Hideji Liquid processing method making use of pipette device and apparatus for same
JP3734183B2 (ja) * 1995-05-11 2006-01-11 株式会社ルネサステクノロジ 電子デバイスの製造方法及び電子デバイス
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
WO1997049132A1 (en) * 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
US5858256A (en) * 1996-07-11 1999-01-12 The Board Of Trustees Of The Leland Stanford, Jr. University Method of forming small aperture
US7193124B2 (en) * 1997-07-22 2007-03-20 Battelle Memorial Institute Method for forming material
US20030077625A1 (en) * 1997-05-27 2003-04-24 Hutchison James E. Particles by facile ligand exchange reactions
US6890624B1 (en) * 2000-04-25 2005-05-10 Nanogram Corporation Self-assembled structures
US6074725A (en) * 1997-12-10 2000-06-13 Caliper Technologies Corp. Fabrication of microfluidic circuits by printing techniques
JP3902883B2 (ja) * 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터
US6294401B1 (en) * 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
JP4403321B2 (ja) * 1999-01-25 2010-01-27 ソニー株式会社 酸化膜の形成方法及びp形半導体素子の製造方法
US6559468B1 (en) * 1999-03-29 2003-05-06 Hewlett-Packard Development Company Lp Molecular wire transistor (MWT)
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) * 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
US6536106B1 (en) * 1999-06-30 2003-03-25 The Penn State Research Foundation Electric field assisted assembly process
WO2001003208A1 (en) * 1999-07-02 2001-01-11 President And Fellows Of Harvard College Nanoscopic wire-based devices, arrays, and methods of their manufacture
US6438025B1 (en) * 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
EP1221179A4 (en) * 1999-09-10 2006-12-13 Starmega Corp STRONG TEXTURED ATOMIC EDGES AND POINTS
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US20020096246A1 (en) * 1999-10-06 2002-07-25 Michael S. Sennet Non-woven elastic microporous membranes
US6790425B1 (en) * 1999-10-27 2004-09-14 Wiliam Marsh Rice University Macroscopic ordered assembly of carbon nanotubes
RU2173003C2 (ru) * 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
DE19960076C2 (de) * 1999-12-13 2002-12-05 November Ag Molekulare Medizin Verfahren und Vorrichtung zum Nachweis und zur Quantifizierung von Biomolekülen
WO2001047044A2 (en) * 1999-12-21 2001-06-28 Plastic Logic Limited Forming interconnects
JP2001180920A (ja) * 1999-12-24 2001-07-03 Nec Corp ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法
US6659598B2 (en) * 2000-04-07 2003-12-09 University Of Kentucky Research Foundation Apparatus and method for dispersing nano-elements to assemble a device
EP1282470B1 (en) * 2000-05-16 2008-08-20 Regents Of The University Of Minnesota High mass throughput particle generation using multiple nozzle spraying
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6723606B2 (en) * 2000-06-29 2004-04-20 California Institute Of Technology Aerosol process for fabricating discontinuous floating gate microelectronic devices
EP1170799A3 (de) * 2000-07-04 2009-04-01 Infineon Technologies AG Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements
JP4112358B2 (ja) * 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
JP3859199B2 (ja) * 2000-07-18 2006-12-20 エルジー エレクトロニクス インコーポレイティド カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ
US6447663B1 (en) * 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
WO2002017362A2 (en) * 2000-08-22 2002-02-28 President And Fellows Of Harvard College Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
JP2002082082A (ja) * 2000-09-07 2002-03-22 Matsushita Refrig Co Ltd 臭気センサー及びその製造方法
EP1342075B1 (en) * 2000-12-11 2008-09-10 President And Fellows Of Harvard College Device contaning nanosensors for detecting an analyte and its method of manufacture
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
JP4512176B2 (ja) * 2001-02-08 2010-07-28 株式会社日立製作所 カーボンナノチューブ電子素子および電子源
US6593065B2 (en) * 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
JP4091265B2 (ja) * 2001-03-30 2008-05-28 株式会社東芝 半導体装置及びその製造方法
KR101008294B1 (ko) * 2001-03-30 2011-01-13 더 리전트 오브 더 유니버시티 오브 캘리포니아 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스
US20020146745A1 (en) * 2001-04-03 2002-10-10 Surromed, Inc. Methods and reagents for multiplexed analyte capture, surface array self-assembly, and analysis of complex biological samples
US6844664B2 (en) * 2001-04-24 2005-01-18 Matsushita Electric Works, Ltd. Field emission electron source and production method thereof
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US6896864B2 (en) * 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
EP1416069B1 (en) * 2001-08-09 2010-10-27 Asahi Kasei Kabushiki Kaisha Organic semiconductor film and method for manufacture thereof
US6672925B2 (en) * 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
NZ513637A (en) * 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
AUPR725601A0 (en) * 2001-08-24 2001-09-20 Commonwealth Scientific And Industrial Research Organisation Strain gauges
WO2003019586A1 (en) * 2001-08-30 2003-03-06 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
JP2003108021A (ja) * 2001-09-28 2003-04-11 Hitachi Ltd 表示装置
WO2003050854A2 (en) * 2001-12-12 2003-06-19 The Pennsylvania State University Chemical reactor templates: sacrificial layer fabrication and template use
US6882767B2 (en) * 2001-12-27 2005-04-19 The Regents Of The University Of California Nanowire optoelectric switching device and method
US6887450B2 (en) * 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
ATE514049T1 (de) * 2002-01-15 2011-07-15 Ibm Mikrostrukturen
US20030236760A1 (en) * 2002-06-05 2003-12-25 Alex Nugent Multi-layer training in a physical neural network formed utilizing nanotechnology
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
WO2003091458A1 (en) * 2002-04-26 2003-11-06 The Penn State Research Foundation Integrated nanomechanical sensor array chips
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
WO2004034467A2 (en) * 2002-07-25 2004-04-22 California Institute Of Technology Sublithographic nanoscale memory architecture
JP4338948B2 (ja) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 カーボンナノチューブ半導体素子の作製方法
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
KR101191632B1 (ko) * 2002-09-30 2012-10-17 나노시스, 인크. 대형 나노 인에이블 매크로전자 기판 및 그 사용
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
US20050253137A1 (en) * 2003-11-20 2005-11-17 President And Fellows Of Harvard College Nanoscale arrays, robust nanostructures, and related devices
JP2007535413A (ja) * 2004-04-30 2007-12-06 ナノシス・インコーポレイテッド ナノワイヤ成長および採取のための系および方法

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