TWI309845B - Large-area nanoenabled macroelectronic substrates and uses therefor - Google Patents

Large-area nanoenabled macroelectronic substrates and uses therefor Download PDF

Info

Publication number
TWI309845B
TWI309845B TW092127075A TW92127075A TWI309845B TW I309845 B TWI309845 B TW I309845B TW 092127075 A TW092127075 A TW 092127075A TW 92127075 A TW92127075 A TW 92127075A TW I309845 B TWI309845 B TW I309845B
Authority
TW
Taiwan
Prior art keywords
nanowire
nanowires
film
substrate
electronic substrate
Prior art date
Application number
TW092127075A
Other languages
English (en)
Chinese (zh)
Other versions
TW200416786A (en
Inventor
Xiangfeng Duan
Chunming Niu
Stephen Empedocles
Linda T Romano
Jian Chen
Vijendra Sahi
Lawrence Bock
David Stumbo
J Wallace Parce
Jay L Goldman
Original Assignee
Nanosys Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanosys Inc filed Critical Nanosys Inc
Publication of TW200416786A publication Critical patent/TW200416786A/zh
Application granted granted Critical
Publication of TWI309845B publication Critical patent/TWI309845B/zh

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/501—FETs having stacked nanowire, nanosheet or nanoribbon channels
    • H10D30/502—FETs having stacked nanowire, nanosheet or nanoribbon channels characterised by the stacked channels
    • H10D30/504—FETs having stacked nanowire, nanosheet or nanoribbon channels characterised by the stacked channels wherein the stacked channels have different properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/702—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive fibres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Photovoltaic Devices (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW092127075A 2002-09-30 2003-09-30 Large-area nanoenabled macroelectronic substrates and uses therefor TWI309845B (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US41435902P 2002-09-30 2002-09-30
US41432302P 2002-09-30 2002-09-30
US46827603P 2003-05-07 2003-05-07
US47406503P 2003-05-29 2003-05-29
US48880103P 2003-07-22 2003-07-22

Publications (2)

Publication Number Publication Date
TW200416786A TW200416786A (en) 2004-09-01
TWI309845B true TWI309845B (en) 2009-05-11

Family

ID=32074780

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092127075A TWI309845B (en) 2002-09-30 2003-09-30 Large-area nanoenabled macroelectronic substrates and uses therefor

Country Status (8)

Country Link
US (2) US8030186B2 (enExample)
EP (2) EP1547139A4 (enExample)
JP (4) JP5336031B2 (enExample)
KR (1) KR101191632B1 (enExample)
AU (1) AU2003283973B2 (enExample)
CA (1) CA2499965C (enExample)
TW (1) TWI309845B (enExample)
WO (1) WO2004032193A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426601B (zh) * 2009-06-04 2014-02-11 立那工業股份有限公司 在具有抗反射塗層基板上的單腔中之奈米線陣列
TWI504900B (zh) * 2013-07-18 2015-10-21 Univ Nat Taiwan 射頻反射式掃描穿隧顯微鏡

Families Citing this family (176)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100791732B1 (ko) 2000-08-22 2008-01-04 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 전기 디바이스
US7301199B2 (en) 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
KR20080005303A (ko) 2000-12-11 2008-01-10 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
WO2004010552A1 (en) 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
WO2004032193A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
JP2007501525A (ja) 2003-08-04 2007-01-25 ナノシス・インコーポレイテッド ナノワイヤ複合体およびこれらに由来する電子基板を作製するためのシステムおよび方法
US7012279B2 (en) 2003-10-21 2006-03-14 Lumileds Lighting U.S., Llc Photonic crystal light emitting device
US20050205883A1 (en) 2004-03-19 2005-09-22 Wierer Jonathan J Jr Photonic crystal light emitting device
US7115971B2 (en) 2004-03-23 2006-10-03 Nanosys, Inc. Nanowire varactor diode and methods of making same
JP2008507114A (ja) 2004-04-27 2008-03-06 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ ソフトリソグラフィ用複合パターニングデバイス
CA2564220A1 (en) 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting
US20050279274A1 (en) 2004-04-30 2005-12-22 Chunming Niu Systems and methods for nanowire growth and manufacturing
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
KR101368748B1 (ko) 2004-06-04 2014-03-05 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치
US7943491B2 (en) 2004-06-04 2011-05-17 The Board Of Trustees Of The University Of Illinois Pattern transfer printing by kinetic control of adhesion to an elastomeric stamp
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
WO2006078281A2 (en) 2004-07-07 2006-07-27 Nanosys, Inc. Systems and methods for harvesting and integrating nanowires
US7442964B2 (en) 2004-08-04 2008-10-28 Philips Lumileds Lighting Company, Llc Photonic crystal light emitting device with multiple lattices
US7365395B2 (en) * 2004-09-16 2008-04-29 Nanosys, Inc. Artificial dielectrics using nanostructures
JP2008515654A (ja) * 2004-10-12 2008-05-15 ナノシス・インク． 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス
KR20070101857A (ko) 2004-12-06 2007-10-17 더 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 나노스케일 와이어 기반 데이터 스토리지
WO2006070670A1 (ja) 2004-12-28 2006-07-06 Matsushita Electric Industrial Co., Ltd. 半導体ナノワイヤ、および当該ナノワイヤを備えた半導体装置
US20060169585A1 (en) * 2005-01-31 2006-08-03 Nagahara Larry A Carbon nanotube sensor
KR101100887B1 (ko) * 2005-03-17 2012-01-02 삼성전자주식회사 박막 트랜지스터, 박막 트랜지스터 표시판 및 그 제조 방법
KR101109623B1 (ko) 2005-04-07 2012-01-31 엘지디스플레이 주식회사 박막트랜지스터와 그 제조방법.
EP1871162B1 (en) * 2005-04-13 2014-03-12 Nanosys, Inc. Nanowire dispersion compositions and uses thereof
US20100227382A1 (en) 2005-05-25 2010-09-09 President And Fellows Of Harvard College Nanoscale sensors
WO2006132659A2 (en) 2005-06-06 2006-12-14 President And Fellows Of Harvard College Nanowire heterostructures
WO2006135336A1 (en) * 2005-06-16 2006-12-21 Qunano Ab Semiconductor nanowire transistor
US8163575B2 (en) 2005-06-17 2012-04-24 Philips Lumileds Lighting Company Llc Grown photonic crystals in semiconductor light emitting devices
KR101106134B1 (ko) * 2005-07-11 2012-01-20 서울옵토디바이스주식회사 나노와이어 형광체를 채택한 발광소자
JP5116961B2 (ja) * 2005-09-29 2013-01-09 国立大学法人名古屋大学 カーボンナノウォールを用いたダイオード
US20100212728A1 (en) * 2005-09-29 2010-08-26 Masaru Hori Diode and Photovoltaic Device Using Carbon Nanostructure
WO2007089322A2 (en) * 2005-11-23 2007-08-09 William Marsh Rice University PREPARATION OF THIN FILM TRANSISTORS (TFTs) OR RADIO FREQUENCY IDENTIFICATION (RFID) TAGS OR OTHER PRINTABLE ELECTRONICS USING INK-JET PRINTER AND CARBON NANOTUBE INKS
EP1791186A1 (en) * 2005-11-25 2007-05-30 Stormled AB Light emitting diode and method for manufacturing the same
KR101232050B1 (ko) * 2005-12-31 2013-02-15 엘지디스플레이 주식회사 액정표시소자 제조방법
JP5271541B2 (ja) * 2006-01-16 2013-08-21 パナソニック株式会社 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法
JP4574634B2 (ja) * 2006-04-03 2010-11-04 キヤノン株式会社 シリコンワイヤを含み構成される物品の製造方法
JP5060740B2 (ja) * 2006-05-26 2012-10-31 シャープ株式会社 集積回路装置およびその製造方法、ならびに表示装置
CA2655340C (en) 2006-06-12 2016-10-25 President And Fellows Of Harvard College Nanosensors and related technologies
JP5312938B2 (ja) * 2006-06-21 2013-10-09 パナソニック株式会社 電界効果トランジスタ
JP2008066557A (ja) * 2006-09-08 2008-03-21 Matsushita Electric Ind Co Ltd 半導体発光装置および半導体発光装置の製造方法
WO2008033303A2 (en) 2006-09-11 2008-03-20 President And Fellows Of Harvard College Branched nanoscale wires
KR20090087467A (ko) 2006-11-07 2009-08-17 나노시스, 인크. 나노와이어 성장 시스템 및 방법
KR100819004B1 (ko) 2006-11-15 2008-04-02 삼성전자주식회사 미세 전자 소자 및 그 제조 방법
EP2076924B1 (en) * 2006-11-17 2017-03-08 Semiconductor Energy Laboratory Co, Ltd. Unerasable memory element and method for manufacturing the same
EP2095100B1 (en) 2006-11-22 2016-09-21 President and Fellows of Harvard College Method of operating a nanowire field effect transistor sensor
CN105826345B (zh) 2007-01-17 2018-07-31 伊利诺伊大学评议会 通过基于印刷的组装制造的光学系统
US8283724B2 (en) 2007-02-26 2012-10-09 Semiconductor Energy Laboratory Co., Ltd. Memory element and semiconductor device, and method for manufacturing the same
US7892610B2 (en) * 2007-05-07 2011-02-22 Nanosys, Inc. Method and system for printing aligned nanowires and other electrical devices
KR101356694B1 (ko) 2007-05-10 2014-01-29 삼성전자주식회사 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법
KR100857542B1 (ko) 2007-07-19 2008-09-08 삼성전자주식회사 탄소 나노튜브 발광소자 및 그 제조방법
DE102007043360A1 (de) * 2007-09-12 2009-03-19 Forschungszentrum Karlsruhe Gmbh Elektronisches Bauelement, Verfahren zu seiner Herstellung und seine Verwendung
EP2205522B1 (en) * 2007-10-02 2019-03-13 President and Fellows of Harvard College Carbon nanotube synthesis for nanopore devices
WO2009087793A1 (ja) * 2008-01-11 2009-07-16 National Institute Of Japan Science And Technology Agency 電界効果トランジスタ、電界効果トランジスタの製造方法、中間体及び第２中間体
KR101475520B1 (ko) 2008-01-14 2014-12-23 삼성전자주식회사 잉크젯 프린트용 양자점 잉크 조성물 및 그를 이용한전자소자
KR101006823B1 (ko) * 2008-01-29 2011-01-12 연세대학교 산학협력단 나노 와이어가 함입된 고분자 박막 구조체의 제조 방법
KR101424816B1 (ko) * 2008-02-18 2014-07-31 삼성전자주식회사 나노와이어를 포함하는 박막 트랜지스터 및 그의 제조방법
CN103872002B (zh) 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
GB2459251A (en) 2008-04-01 2009-10-21 Sharp Kk Semiconductor nanowire devices
CN101582450B (zh) 2008-05-16 2012-03-28 清华大学 薄膜晶体管
CN101582444A (zh) 2008-05-14 2009-11-18 清华大学 薄膜晶体管
CN101582447B (zh) 2008-05-14 2010-09-29 清华大学 薄膜晶体管
CN101593699B (zh) 2008-05-30 2010-11-10 清华大学 薄膜晶体管的制备方法
CN101582448B (zh) 2008-05-14 2012-09-19 清华大学 薄膜晶体管
CN101582382B (zh) 2008-05-14 2011-03-23 鸿富锦精密工业（深圳）有限公司 薄膜晶体管的制备方法
CN101582445B (zh) 2008-05-14 2012-05-16 清华大学 薄膜晶体管
CN101582446B (zh) 2008-05-14 2011-02-02 鸿富锦精密工业（深圳）有限公司 薄膜晶体管
CN101582449B (zh) 2008-05-14 2011-12-14 清华大学 薄膜晶体管
CN101587839B (zh) 2008-05-23 2011-12-21 清华大学 薄膜晶体管的制备方法
WO2010005707A1 (en) 2008-06-16 2010-01-14 The Board Of Trustees Of The University Of Illinois Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates
JP5444342B2 (ja) * 2008-07-18 2014-03-19 パナソニック株式会社 半導体デバイスおよびチャネル形成方法
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
EP2349440B1 (en) 2008-10-07 2019-08-21 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
JP5442234B2 (ja) 2008-10-24 2014-03-12 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US20110234345A1 (en) * 2008-11-28 2011-09-29 Hiroshi Onodera Combined magnetic body, combined magnetic body production method, combined magnetic body injection apparatus, combined magnetic body injection control system, magnetic field control apparatus and combined magnetic body injection control method
JP2012513119A (ja) * 2008-12-18 2012-06-07 ファースト ソーラー インコーポレイテッド 裏面金属コンタクトを含む光電変換装置
KR101706915B1 (ko) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리
US20120135158A1 (en) 2009-05-26 2012-05-31 Sharp Kabushiki Kaisha Methods and systems for electric field deposition of nanowires and other devices
US8623288B1 (en) 2009-06-29 2014-01-07 Nanosys, Inc. Apparatus and methods for high density nanowire growth
US9297796B2 (en) 2009-09-24 2016-03-29 President And Fellows Of Harvard College Bent nanowires and related probing of species
WO2011041727A1 (en) 2009-10-01 2011-04-07 Mc10, Inc. Protective cases with integrated electronics
JP4996660B2 (ja) * 2009-10-15 2012-08-08 シャープ株式会社 発光装置およびその製造方法
JP5094824B2 (ja) * 2009-10-19 2012-12-12 シャープ株式会社 棒状構造発光素子、バックライト、照明装置および表示装置
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP4887414B2 (ja) * 2009-10-19 2012-02-29 シャープ株式会社 発光装置、バックライト、照明装置および表示装置
JP5014403B2 (ja) * 2009-11-19 2012-08-29 シャープ株式会社 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置
JP4912448B2 (ja) * 2009-10-22 2012-04-11 シャープ株式会社 発光装置およびその製造方法
KR101588318B1 (ko) * 2009-11-23 2016-01-25 삼성전자주식회사 튜브형 압전 에너지 발생 장치 및 그 제조방법
JP5256176B2 (ja) * 2009-11-25 2013-08-07 シャープ株式会社 基板へのナノ構造体の塗布方法及びその装置
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
WO2011084450A1 (en) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
JP4814394B2 (ja) * 2010-03-05 2011-11-16 シャープ株式会社 発光装置の製造方法
JP5616659B2 (ja) * 2010-03-19 2014-10-29 シャープ株式会社 液晶表示装置
CN102782892B (zh) 2010-03-12 2015-07-01 夏普株式会社 发光装置的制造方法、发光装置、照明装置、背光灯、液晶面板、显示装置、显示装置的制造方法、显示装置的驱动方法及液晶显示装置
JP4848464B2 (ja) * 2010-03-12 2011-12-28 シャープ株式会社 発光装置の製造方法
JP2011211047A (ja) * 2010-03-30 2011-10-20 Sharp Corp 表示装置、表示装置の製造方法および表示装置の駆動方法
EP2974673B1 (en) 2010-03-17 2017-03-22 The Board of Trustees of the University of Illionis Implantable biomedical devices on bioresorbable substrates
JP2011198697A (ja) * 2010-03-23 2011-10-06 Sharp Corp 発光装置、発光装置の製造方法、照明装置およびバックライト
FR2959867B1 (fr) * 2010-05-05 2013-08-16 Commissariat Energie Atomique Dispositif microelectronique a portions disjointes de semi-conducteur et procede de realisation d'un tel dispositif
KR101359349B1 (ko) * 2010-05-12 2014-02-11 전자부품연구원 나노 와이어 복합체 및 이를 이용한 바이오 센서
US8394710B2 (en) * 2010-06-21 2013-03-12 International Business Machines Corporation Semiconductor devices fabricated by doped material layer as dopant source
WO2012097163A1 (en) 2011-01-14 2012-07-19 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
JP5713472B2 (ja) * 2011-03-04 2015-05-07 独立行政法人産業技術総合研究所 熱電変換材料及び該材料を用いたフレキシブル熱電変換素子
JP2014123583A (ja) * 2011-04-11 2014-07-03 Sharp Corp 発光装置、発光装置の製造方法、照明装置、バックライトおよび表示装置
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
US9159635B2 (en) 2011-05-27 2015-10-13 Mc10, Inc. Flexible electronic structure
EP2713863B1 (en) 2011-06-03 2020-01-15 The Board of Trustees of the University of Illionis Conformable actively multiplexed high-density surface electrode array for brain interfacing
US8356262B1 (en) * 2011-06-22 2013-01-15 Taiwan Semiconductor Manufacturing Co., Ltd. Cell architecture and method
JP2013021165A (ja) * 2011-07-12 2013-01-31 Sony Corp 蒸着用マスク、蒸着用マスクの製造方法、電子素子および電子素子の製造方法
US8852998B1 (en) * 2011-08-30 2014-10-07 Sandia Corporation Method to fabricate micro and nano diamond devices
JP5422628B2 (ja) * 2011-10-17 2014-02-19 シャープ株式会社 発光装置の製造方法
WO2013078127A1 (en) 2011-11-22 2013-05-30 Siemens Healthcare Diagnostics Inc. Interdigitated array and method of manufacture
HK1204205A1 (en) 2011-12-01 2015-11-06 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
US8575009B2 (en) * 2012-03-08 2013-11-05 International Business Machines Corporation Two-step hydrogen annealing process for creating uniform non-planar semiconductor devices at aggressive pitch
EP2830492B1 (en) 2012-03-30 2021-05-19 The Board of Trustees of the University of Illinois Appendage mountable electronic devices conformable to surfaces and method of making the same
US9237646B2 (en) * 2012-05-14 2016-01-12 The Hong Kong University Of Science And Technology Electrical and thermal conductive thin film with double layer structure provided as a one-dimensional nanomaterial network with graphene/graphene oxide coating
KR20150023794A (ko) * 2012-06-18 2015-03-05 이노바 다이나믹스, 인코포레이티드 용기에 보관된 나노와이어 현탁액 중의 응집체 감소
US20140034905A1 (en) 2012-08-01 2014-02-06 International Business Machines Corporation Epitaxially Thickened Doped or Undoped Core Nanowire FET Structure and Method for Increasing Effective Device Width
JP6122598B2 (ja) * 2012-09-27 2017-04-26 シャープ株式会社 Ｌｅｄプリントヘッド
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US10376146B2 (en) 2013-02-06 2019-08-13 California Institute Of Technology Miniaturized implantable electrochemical sensor devices
BR112015013928A2 (pt) * 2012-12-13 2017-07-11 California Inst Of Techn fabricação de eletrodos tridimensionais com área de superfície elevada
US8994077B2 (en) 2012-12-21 2015-03-31 International Business Machines Corporation Field effect transistor-based bio sensor
JPWO2014126211A1 (ja) * 2013-02-15 2017-02-02 国立大学法人 奈良先端科学技術大学院大学 ｎ型熱電変換材料および熱電変換素子、ならびにｎ型熱電変換材料の製造方法
US20200191655A1 (en) * 2018-12-15 2020-06-18 William N. Carr Photonic- and Phononic-structured pixel for electromagnetic radiation and detection
US9429769B2 (en) * 2013-05-09 2016-08-30 Johnson & Johnson Vision Care, Inc. Ophthalmic device with thin film nanocrystal integrated circuits
US20160072034A1 (en) * 2013-05-21 2016-03-10 The Regents Of The University Of California Metals-semiconductor nanowire composites
CN104211024B (zh) * 2013-06-04 2016-02-10 中国科学院上海硅酸盐研究所 P型可逆相变高性能热电材料及其制备方法
JP6256912B2 (ja) * 2013-11-12 2018-01-10 国立研究開発法人産業技術総合研究所 カーボンナノチューブ集合体を用いた電界効果トランジスタ
WO2015077629A1 (en) 2013-11-21 2015-05-28 Atom Nanoelectronics, Inc. Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays
US9287516B2 (en) * 2014-04-07 2016-03-15 International Business Machines Corporation Forming pn junction contacts by different dielectrics
US9917240B2 (en) 2014-07-24 2018-03-13 Samsung Electronics Co., Ltd. Thermoelectric element, method of manufacturing the same and semiconductor device including the same
US10276370B2 (en) * 2014-12-29 2019-04-30 Georgia Tech Research Corporation Methods for the continuous, large-scale manufacture of functional nanostructures
EP3054486B1 (en) 2015-02-04 2021-07-07 Nokia Technologies Oy A field-effect apparatus, associated apparatus and methods
JP2018524677A (ja) 2015-06-01 2018-08-30 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシティー オブ イリノイ 無線電力及び近距離無線通信機能を備えた小型電子システム
US11029198B2 (en) 2015-06-01 2021-06-08 The Board Of Trustees Of The University Of Illinois Alternative approach for UV sensing
US10829605B2 (en) 2015-07-02 2020-11-10 Sabic Global Technologies B.V. Process and material for growth of adsorbed compound via nanoscale-controlled resistive heating and uses thereof
US10368788B2 (en) 2015-07-23 2019-08-06 California Institute Of Technology System and methods for wireless drug delivery on command
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
US10683404B2 (en) 2015-11-17 2020-06-16 Sabic Global Technologies B.V. Porous polymer nanocomposites with ordered and tunable crystalline and amorphous phase domains
CN106783669B (zh) * 2015-11-25 2019-04-12 无锡华瑛微电子技术有限公司 半导体处理装置及方法
US10505094B2 (en) * 2015-12-29 2019-12-10 Massachusetts Institute Of Technology Superconducting nanowire avalanche photodetectors with reduced current crowding
US11231382B2 (en) 2016-06-15 2022-01-25 William N. Carr Integrated thermal sensor comprising a photonic crystal
US11300453B2 (en) 2017-06-18 2022-04-12 William N. Carr Photonic- and phononic-structured pixel for electromagnetic radiation and detection
CN107564948B (zh) * 2016-07-01 2021-01-05 清华大学 纳米异质结构及纳米晶体管的制备方法
JP6893344B2 (ja) * 2016-10-18 2021-06-23 国立研究開発法人物質・材料研究機構 銅ガリウムテルル系ｐ型熱電半導体、及びそれを用いた熱電発電素子
CN108336142B (zh) * 2017-01-20 2020-09-25 清华大学 薄膜晶体管
EP3373347A1 (en) * 2017-03-09 2018-09-12 Riccardo Raccis Conversion material
US10873026B2 (en) * 2017-03-10 2020-12-22 Wisconsin Alumni Research Foundation Alignment of carbon nanotubes in confined channels
US10847757B2 (en) 2017-05-04 2020-11-24 Carbon Nanotube Technologies, Llc Carbon enabled vertical organic light emitting transistors
US10978640B2 (en) 2017-05-08 2021-04-13 Atom H2O, Llc Manufacturing of carbon nanotube thin film transistor backplanes and display integration thereof
US20190011477A1 (en) * 2017-06-26 2019-01-10 William N. Carr Convective inertial accelerometer with metamaterial thermal structure
CN109428008B (zh) * 2017-08-30 2020-01-07 清华大学 有机发光二极管的制备方法
DE112019000577T5 (de) * 2018-01-29 2020-11-12 Massachusetts Institute Of Technology Back-gate-feldeffekttransistoren und verfahren zu deren herstellung
CN110118725B (zh) * 2018-02-07 2021-08-31 清华大学 光电流扫描系统
US11451189B1 (en) * 2018-02-16 2022-09-20 The United States Of America As Represented By The Secretary Of The Navy Method for improving mechanical integrity of crystalline silicon solar cells
CN112585457A (zh) 2018-06-08 2021-03-30 麻省理工学院 用于气体感测的系统、装置和方法
KR20180077114A (ko) * 2018-06-22 2018-07-06 피에스아이 주식회사 전기적 컨택이 향상된 초소형 led 전극 어셈블리
JP7209952B2 (ja) * 2018-07-05 2023-01-23 一般財団法人ファインセラミックスセンター 強誘電体ナノ粒子集積方法及び電子部品の製造方法
CN109256429B (zh) * 2018-08-03 2021-01-26 Tcl华星光电技术有限公司 氧化物半导体薄膜晶体管及其制作方法
KR102626051B1 (ko) 2018-08-14 2024-01-19 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 픽셀 구조체 및 그 제조 방법
WO2020086181A2 (en) 2018-09-10 2020-04-30 Massachusetts Institute Of Technology Systems and methods for designing integrated circuits
CN112840448B (zh) 2018-09-24 2024-10-11 麻省理工学院 通过工程化原子层沉积对碳纳米管的可调掺杂
CN113632254B (zh) 2019-01-04 2026-07-21 阿汤姆H20有限责任公司 基于碳纳米管的射频设备
CN121888767A (zh) * 2019-01-29 2026-04-17 奥斯兰姆奥普托半导体股份有限两合公司 微型发光二极管、微型发光二极管装置、显示器及其方法
US11016055B2 (en) * 2019-07-09 2021-05-25 Globalfoundries Singapore Pte. Ltd. Sensors with a front-end-of-line solution-receiving cavity
US20240081150A1 (en) * 2019-10-10 2024-03-07 Sony Semiconductor Solutions Corporation Electromagnetic wave detection device, electromagnetic wave detection system, and electromagnetic wave detection method
KR20220111299A (ko) 2019-12-05 2022-08-09 아톰 에이치투오, 엘엘씨 단일벽 탄소 나노튜브 막과 그 제조 방법 및 제조 장치
US12464788B2 (en) * 2020-03-31 2025-11-04 Peking University Method for depositing nanostructures on substrate and nanostructure arrays
WO2021237180A1 (en) * 2020-05-22 2021-11-25 Roswell Biotechnologies, Inc. Near-room-temperature processable amorphous semiconductor nano-ribbon bridge biosensors and memory devices
KR102812357B1 (ko) * 2020-10-16 2025-05-23 삼성전자주식회사 반도체 소자 및 그 동작방법
EP4533544B1 (en) * 2023-06-20 2025-10-22 Ideaded, S.L. Vertical field effect device and method of manufacturing

Family Cites Families (90)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6267872A (ja) * 1985-09-20 1987-03-27 Toshiba Corp 非晶質シリコン薄膜トランジスタ
US4769683A (en) * 1987-06-22 1988-09-06 Motorola Inc. Superlattice gate field effect transistor
US4817842A (en) * 1988-01-29 1989-04-04 International Business Machines Corporation Door and spring assembly for a paper feed mechanism
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5274602A (en) * 1991-10-22 1993-12-28 Florida Atlantic University Large capacity solid-state memory
JPH07109881B2 (ja) * 1993-03-22 1995-11-22 株式会社日立製作所 量子細線導波路
US5962863A (en) * 1993-09-09 1999-10-05 The United States Of America As Represented By The Secretary Of The Navy Laterally disposed nanostructures of silicon on an insulating substrate
JP3165324B2 (ja) * 1994-04-13 2001-05-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP0661733A2 (en) * 1993-12-21 1995-07-05 International Business Machines Corporation One dimensional silicon quantum wire devices and the method of manufacture thereof
US5581091A (en) * 1994-12-01 1996-12-03 Moskovits; Martin Nanoelectric devices
US5895631A (en) * 1995-03-20 1999-04-20 Precision System Science Co., Ltd. Liquid processing method making use of pipette device and apparatus for same
JP3734183B2 (ja) * 1995-05-11 2006-01-11 株式会社ルネサステクノロジ 電子デバイスの製造方法及び電子デバイス
US6445006B1 (en) * 1995-12-20 2002-09-03 Advanced Technology Materials, Inc. Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same
WO1997049132A1 (en) * 1996-06-20 1997-12-24 Jeffrey Frey Light-emitting semiconductor device
US5858256A (en) * 1996-07-11 1999-01-12 The Board Of Trustees Of The Leland Stanford, Jr. University Method of forming small aperture
US7193124B2 (en) * 1997-07-22 2007-03-20 Battelle Memorial Institute Method for forming material
US20030077625A1 (en) * 1997-05-27 2003-04-24 Hutchison James E. Particles by facile ligand exchange reactions
US6890624B1 (en) * 2000-04-25 2005-05-10 Nanogram Corporation Self-assembled structures
US6074725A (en) * 1997-12-10 2000-06-13 Caliper Technologies Corp. Fabrication of microfluidic circuits by printing techniques
JP3902883B2 (ja) * 1998-03-27 2007-04-11 キヤノン株式会社 ナノ構造体及びその製造方法
KR100277881B1 (ko) * 1998-06-16 2001-02-01 김영환 트랜지스터
US6294401B1 (en) * 1998-08-19 2001-09-25 Massachusetts Institute Of Technology Nanoparticle-based electrical, chemical, and mechanical structures and methods of making same
JP4403321B2 (ja) * 1999-01-25 2010-01-27 ソニー株式会社 酸化膜の形成方法及びｐ形半導体素子の製造方法
US7030408B1 (en) * 1999-03-29 2006-04-18 Hewlett-Packard Development Company, L.P. Molecular wire transistor (MWT)
US6256767B1 (en) * 1999-03-29 2001-07-03 Hewlett-Packard Company Demultiplexer for a molecular wire crossbar network (MWCN DEMUX)
US6815218B1 (en) * 1999-06-09 2004-11-09 Massachusetts Institute Of Technology Methods for manufacturing bioelectronic devices
WO2001001475A1 (en) * 1999-06-30 2001-01-04 The Penn State Research Foundation Electrofluidic assembly of devices and components for micro- and nano-scale integration
DE60044972D1 (de) * 1999-07-02 2010-10-28 Harvard College Nanoskopischen draht enthaltende anordnung, logisc
US6438025B1 (en) * 1999-09-08 2002-08-20 Sergei Skarupo Magnetic memory device
AU7701300A (en) * 1999-09-10 2001-04-10 Starmega Corporation Strongly textured atomic ridges and dots
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
US20020096246A1 (en) * 1999-10-06 2002-07-25 Michael S. Sennet Non-woven elastic microporous membranes
WO2001030694A1 (en) * 1999-10-27 2001-05-03 William Marsh Rice University Macroscopic ordered assembly of carbon nanotubes
RU2173003C2 (ru) * 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
DE19960076C2 (de) * 1999-12-13 2002-12-05 November Ag Molekulare Medizin Verfahren und Vorrichtung zum Nachweis und zur Quantifizierung von Biomolekülen
BR0016661B1 (pt) * 1999-12-21 2013-11-26 Métodos para formação de um dispositivo eletrônico, dispositivo eletrônico e dispositivo de exibição
JP2001180920A (ja) * 1999-12-24 2001-07-03 Nec Corp ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法
US6659598B2 (en) * 2000-04-07 2003-12-09 University Of Kentucky Research Foundation Apparatus and method for dispersing nano-elements to assemble a device
AU2001261625B2 (en) * 2000-05-16 2006-04-06 Regents Of The University Of Minnesota High mass throughput particle generation using multiple nozzle spraying
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
US6586785B2 (en) * 2000-06-29 2003-07-01 California Institute Of Technology Aerosol silicon nanoparticles for use in semiconductor device fabrication
EP1170799A3 (de) * 2000-07-04 2009-04-01 Infineon Technologies AG Elektronisches Bauelement und Verfahren zum Herstellen eines elektronischen Bauelements
WO2002003482A1 (de) * 2000-07-04 2002-01-10 Infineon Technologies Ag Feldeffekttransistor
GB2364933B (en) * 2000-07-18 2002-12-31 Lg Electronics Inc Method of horizontally growing carbon nanotubes
US6447663B1 (en) * 2000-08-01 2002-09-10 Ut-Battelle, Llc Programmable nanometer-scale electrolytic metal deposition and depletion
KR100791732B1 (ko) * 2000-08-22 2008-01-04 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 전기 디바이스
US7301199B2 (en) * 2000-08-22 2007-11-27 President And Fellows Of Harvard College Nanoscale wires and related devices
JP2002082082A (ja) * 2000-09-07 2002-03-22 Matsushita Refrig Co Ltd 臭気センサー及びその製造方法
KR20080005303A (ko) * 2000-12-11 2008-01-10 프레지던트 앤드 펠로우즈 오브 하버드 칼리지 나노센서
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US6444495B1 (en) * 2001-01-11 2002-09-03 Honeywell International, Inc. Dielectric films for narrow gap-fill applications
JP4512176B2 (ja) * 2001-02-08 2010-07-28 株式会社日立製作所 カーボンナノチューブ電子素子および電子源
US6593065B2 (en) * 2001-03-12 2003-07-15 California Institute Of Technology Method of fabricating nanometer-scale flowchannels and trenches with self-aligned electrodes and the structures formed by the same
JP4091265B2 (ja) * 2001-03-30 2008-05-28 株式会社東芝 半導体装置及びその製造方法
TW554388B (en) * 2001-03-30 2003-09-21 Univ California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
AU2002307090A1 (en) * 2001-04-03 2002-10-21 Surromed, Inc. Methods and reagents for multiplexed analyte capture, surface array self-assembly, and analysis of complex biological samples
CN100399487C (zh) * 2001-04-24 2008-07-02 松下电工株式会社 场致发射型电子源及其制法
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
US6896864B2 (en) * 2001-07-10 2005-05-24 Battelle Memorial Institute Spatial localization of dispersed single walled carbon nanotubes into useful structures
CN100334263C (zh) * 2001-08-09 2007-08-29 旭化成株式会社 有机半导体元件
US6672925B2 (en) * 2001-08-17 2004-01-06 Motorola, Inc. Vacuum microelectronic device and method
NZ513637A (en) * 2001-08-20 2004-02-27 Canterprise Ltd Nanoscale electronic devices & fabrication methods
AUPR725601A0 (en) * 2001-08-24 2001-09-20 Commonwealth Scientific And Industrial Research Organisation Strain gauges
WO2003019586A1 (en) * 2001-08-30 2003-03-06 Koninklijke Philips Electronics N.V. Magnetoresistive device and electronic device
JP2003108021A (ja) * 2001-09-28 2003-04-11 Hitachi Ltd 表示装置
WO2003050854A2 (en) * 2001-12-12 2003-06-19 The Pennsylvania State University Chemical reactor templates: sacrificial layer fabrication and template use
US6882767B2 (en) * 2001-12-27 2005-04-19 The Regents Of The University Of California Nanowire optoelectric switching device and method
US6887450B2 (en) * 2002-01-02 2005-05-03 Zyvex Corporation Directional assembly of carbon nanotube strings
JP4148517B2 (ja) * 2002-01-15 2008-09-10 インターナショナル・ビジネス・マシーンズ・コーポレーション 微細構造
US20030236760A1 (en) * 2002-06-05 2003-12-25 Alex Nugent Multi-layer training in a physical neural network formed utilizing nanotechnology
US7049625B2 (en) * 2002-03-18 2006-05-23 Max-Planck-Gesellschaft Zur Fonderung Der Wissenschaften E.V. Field effect transistor memory cell, memory device and method for manufacturing a field effect transistor memory cell
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US6872645B2 (en) * 2002-04-02 2005-03-29 Nanosys, Inc. Methods of positioning and/or orienting nanostructures
US6831017B1 (en) * 2002-04-05 2004-12-14 Integrated Nanosystems, Inc. Catalyst patterning for nanowire devices
US20030189202A1 (en) * 2002-04-05 2003-10-09 Jun Li Nanowire devices and methods of fabrication
WO2003091458A1 (en) * 2002-04-26 2003-11-06 The Penn State Research Foundation Integrated nanomechanical sensor array chips
US6760245B2 (en) * 2002-05-01 2004-07-06 Hewlett-Packard Development Company, L.P. Molecular wire crossbar flash memory
WO2004010552A1 (en) * 2002-07-19 2004-01-29 President And Fellows Of Harvard College Nanoscale coherent optical components
US6963077B2 (en) * 2002-07-25 2005-11-08 California Institute Of Technology Sublithographic nanoscale memory architecture
JP4338948B2 (ja) * 2002-08-01 2009-10-07 株式会社半導体エネルギー研究所 カーボンナノチューブ半導体素子の作製方法
US6784017B2 (en) * 2002-08-12 2004-08-31 Precision Dynamics Corporation Method of creating a high performance organic semiconductor device
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US7115916B2 (en) * 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
WO2004032193A2 (en) * 2002-09-30 2004-04-15 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US7135728B2 (en) * 2002-09-30 2006-11-14 Nanosys, Inc. Large-area nanoenabled macroelectronic substrates and uses therefor
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
US7067867B2 (en) * 2002-09-30 2006-06-27 Nanosys, Inc. Large-area nonenabled macroelectronic substrates and uses therefor
US20050253137A1 (en) * 2003-11-20 2005-11-17 President And Fellows Of Harvard College Nanoscale arrays, robust nanostructures, and related devices
CA2564220A1 (en) * 2004-04-30 2005-12-15 Nanosys, Inc. Systems and methods for nanowire growth and harvesting

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426601B (zh) * 2009-06-04 2014-02-11 立那工業股份有限公司 在具有抗反射塗層基板上的單腔中之奈米線陣列
TWI504900B (zh) * 2013-07-18 2015-10-21 Univ Nat Taiwan 射頻反射式掃描穿隧顯微鏡

Also Published As

Publication number Publication date
US20110312163A1 (en) 2011-12-22
CA2499965C (en) 2013-03-19
JP6047533B2 (ja) 2016-12-21
AU2003283973B2 (en) 2008-10-30
JP2006507692A (ja) 2006-03-02
US8030186B2 (en) 2011-10-04
JP2011101047A (ja) 2011-05-19
WO2004032193A3 (en) 2005-01-27
EP1547139A4 (en) 2009-08-26
KR101191632B1 (ko) 2012-10-17
EP2194026A1 (en) 2010-06-09
JP2016225659A (ja) 2016-12-28
TW200416786A (en) 2004-09-01
JP2015046600A (ja) 2015-03-12
WO2004032193A2 (en) 2004-04-15
KR20050060080A (ko) 2005-06-21
US8293624B2 (en) 2012-10-23
JP5336031B2 (ja) 2013-11-06
US20110045660A1 (en) 2011-02-24
CA2499965A1 (en) 2004-04-15
EP1547139A2 (en) 2005-06-29
AU2003283973A1 (en) 2004-04-23

Similar Documents

Publication Publication Date Title
CA2499965C (en) Large-area nanoenabled macroelectronic substrates and uses therefor
US7262501B2 (en) Large-area nanoenabled macroelectronic substrates and uses therefor
US7233041B2 (en) Large-area nanoenabled macroelectronic substrates and uses therefor
CN1745468B (zh) 大面积纳米启动宏电子衬底及其用途
CN101401210B (zh) 在以纳米线为基础的电子装置中用于栅极构造和改进触点的方法、系统和设备
McAlpine et al. High-performance nanowire electronics and photonics on glass and plastic substrates
US9455256B2 (en) Inverter including two-dimensional material, method of manufacturing the same and logic device including inverter
US9269775B2 (en) Tunneling devices and methods of manufacturing the same
TW200425513A (en) Field effect transistor and manufacturing method thereof
US10263068B2 (en) Field effect transistor device
Yu et al. Self-assembled nanowire-on-insulator (SANOI) for nano-chip technology

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees