JP2006501672A5 - - Google Patents

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Publication number
JP2006501672A5
JP2006501672A5 JP2004541537A JP2004541537A JP2006501672A5 JP 2006501672 A5 JP2006501672 A5 JP 2006501672A5 JP 2004541537 A JP2004541537 A JP 2004541537A JP 2004541537 A JP2004541537 A JP 2004541537A JP 2006501672 A5 JP2006501672 A5 JP 2006501672A5
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JP
Japan
Prior art keywords
channel region
region
fin fet
layer
fet body
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Pending
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JP2004541537A
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English (en)
Japanese (ja)
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JP2006501672A (ja
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Priority claimed from US10/335,474 external-priority patent/US6800910B2/en
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Publication of JP2006501672A publication Critical patent/JP2006501672A/ja
Publication of JP2006501672A5 publication Critical patent/JP2006501672A5/ja
Pending legal-status Critical Current

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JP2004541537A 2002-09-30 2003-09-12 改善されたキャリア移動度を有するフィンｆｅｔとその形成方法 Pending JP2006501672A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41522602P 2002-09-30 2002-09-30
US10/335,474 US6800910B2 (en) 2002-09-30 2002-12-31 FinFET device incorporating strained silicon in the channel region
PCT/US2003/028660 WO2004032246A1 (en) 2002-09-30 2003-09-12 Finfet having improved carrier mobility and method of its formation

Publications (2)

Publication Number Publication Date
JP2006501672A JP2006501672A (ja) 2006-01-12
JP2006501672A5 true JP2006501672A5 (enExample) 2007-02-22

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Application Number Title Priority Date Filing Date
JP2004541537A Pending JP2006501672A (ja) 2002-09-30 2003-09-12 改善されたキャリア移動度を有するフィンｆｅｔとその形成方法

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Country Link
US (1) US6800910B2 (enExample)
EP (1) EP1547156B1 (enExample)
JP (1) JP2006501672A (enExample)
KR (1) KR101020811B1 (enExample)
CN (1) CN100524827C (enExample)
AU (1) AU2003266149A1 (enExample)
DE (1) DE60335391D1 (enExample)
TW (1) TWI364095B (enExample)
WO (1) WO2004032246A1 (enExample)

Families Citing this family (166)

* Cited by examiner, † Cited by third party
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