JP2006501672A - 改善されたキャリア移動度を有するフィンｆｅｔとその形成方法 - Google Patents

改善されたキャリア移動度を有するフィンｆｅｔとその形成方法 Download PDF

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Publication number
JP2006501672A
JP2006501672A JP2004541537A JP2004541537A JP2006501672A JP 2006501672 A JP2006501672 A JP 2006501672A JP 2004541537 A JP2004541537 A JP 2004541537A JP 2004541537 A JP2004541537 A JP 2004541537A JP 2006501672 A JP2006501672 A JP 2006501672A
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Prior art keywords
silicon
layer
channel region
fin fet
region
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JP2004541537A
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Japanese (ja)
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JP2006501672A5 (enExample
Inventor
リン ミン−レン
グー ジャン−サク
ワン ハイホン
シャン キ
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication of JP2006501672A publication Critical patent/JP2006501672A/ja
Publication of JP2006501672A5 publication Critical patent/JP2006501672A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions

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  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
JP2004541537A 2002-09-30 2003-09-12 改善されたキャリア移動度を有するフィンｆｅｔとその形成方法 Pending JP2006501672A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41522602P 2002-09-30 2002-09-30
US10/335,474 US6800910B2 (en) 2002-09-30 2002-12-31 FinFET device incorporating strained silicon in the channel region
PCT/US2003/028660 WO2004032246A1 (en) 2002-09-30 2003-09-12 Finfet having improved carrier mobility and method of its formation

Publications (2)

Publication Number Publication Date
JP2006501672A true JP2006501672A (ja) 2006-01-12
JP2006501672A5 JP2006501672A5 (enExample) 2007-02-22

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JP2004541537A Pending JP2006501672A (ja) 2002-09-30 2003-09-12 改善されたキャリア移動度を有するフィンｆｅｔとその形成方法

Country Status (9)

Country Link
US (1) US6800910B2 (enExample)
EP (1) EP1547156B1 (enExample)
JP (1) JP2006501672A (enExample)
KR (1) KR101020811B1 (enExample)
CN (1) CN100524827C (enExample)
AU (1) AU2003266149A1 (enExample)
DE (1) DE60335391D1 (enExample)
TW (1) TWI364095B (enExample)
WO (1) WO2004032246A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051241A (ja) * 2003-07-25 2005-02-24 Interuniv Micro Electronica Centrum Vzw 多層ゲート半導体デバイス及びその製造方法
US7867856B2 (en) 2006-07-26 2011-01-11 Elpida Memory, Inc. Method of manufacturing a semiconductor device having fin-field effect transistor
JP2011505697A (ja) * 2007-11-30 2011-02-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ヘテロ構造逆ｔ字電界効果トランジスタ
JP2011103487A (ja) * 2003-03-17 2011-05-26 Samsung Electronics Co Ltd 半導体素子及びトランジスタ

Families Citing this family (162)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US7074623B2 (en) 2002-06-07 2006-07-11 Amberwave Systems Corporation Methods of forming strained-semiconductor-on-insulator finFET device structures
US7358121B2 (en) * 2002-08-23 2008-04-15 Intel Corporation Tri-gate devices and methods of fabrication
US6855990B2 (en) * 2002-11-26 2005-02-15 Taiwan Semiconductor Manufacturing Co., Ltd Strained-channel multiple-gate transistor
US7091068B1 (en) * 2002-12-06 2006-08-15 Advanced Micro Devices, Inc. Planarizing sacrificial oxide to improve gate critical dimension in semiconductor devices
US6803631B2 (en) 2003-01-23 2004-10-12 Advanced Micro Devices, Inc. Strained channel finfet
WO2004073044A2 (en) * 2003-02-13 2004-08-26 Massachusetts Institute Of Technology Finfet device and method to make same
US6855606B2 (en) * 2003-02-20 2005-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-rod devices
TWI231994B (en) * 2003-04-04 2005-05-01 Univ Nat Taiwan Strained Si FinFET
US7074656B2 (en) * 2003-04-29 2006-07-11 Taiwan Semiconductor Manufacturing Company, Ltd. Doping of semiconductor fin devices
US6909186B2 (en) * 2003-05-01 2005-06-21 International Business Machines Corporation High performance FET devices and methods therefor
WO2004107452A1 (ja) * 2003-05-30 2004-12-09 Matsushita Electric Industrial Co., Ltd. 半導体装置およびその製造方法
US7045401B2 (en) * 2003-06-23 2006-05-16 Sharp Laboratories Of America, Inc. Strained silicon finFET device
US7456476B2 (en) 2003-06-27 2008-11-25 Intel Corporation Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication
US6909151B2 (en) 2003-06-27 2005-06-21 Intel Corporation Nonplanar device with stress incorporation layer and method of fabrication
US7005330B2 (en) * 2003-06-27 2006-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for forming the gate electrode in a multiple-gate transistor
US6943405B2 (en) * 2003-07-01 2005-09-13 International Business Machines Corporation Integrated circuit having pairs of parallel complementary FinFETs
EP1519421A1 (en) 2003-09-25 2005-03-30 Interuniversitair Microelektronica Centrum Vzw Multiple gate semiconductor device and method for forming same
US6921982B2 (en) * 2003-07-21 2005-07-26 International Business Machines Corporation FET channel having a strained lattice structure along multiple surfaces
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
EP1503424A3 (en) * 2003-07-25 2008-06-04 Interuniversitair Micro-Elektronica Centrum (IMEC) Multiple gate semiconductor device and method for forming same
US7301206B2 (en) * 2003-08-01 2007-11-27 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
US7355253B2 (en) * 2003-08-22 2008-04-08 International Business Machines Corporation Strained-channel Fin field effect transistor (FET) with a uniform channel thickness and separate gates
US6970373B2 (en) * 2003-10-02 2005-11-29 Intel Corporation Method and apparatus for improving stability of a 6T CMOS SRAM cell
US6855588B1 (en) * 2003-10-07 2005-02-15 United Microelectronics Corp. Method of fabricating a double gate MOSFET device
US7888201B2 (en) * 2003-11-04 2011-02-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor-on-insulator SRAM configured using partially-depleted and fully-depleted transistors
KR100605497B1 (ko) * 2003-11-27 2006-07-28 삼성전자주식회사 에스오아이 기판들을 제조하는 방법들, 이를 사용하여반도체 소자들을 제조하는 방법들 및 그에 의해 제조된반도체 소자들
US6924178B2 (en) * 2003-12-08 2005-08-02 International Business Machines Corporation Oxide/nitride stacked in FinFET spacer process
US7388258B2 (en) * 2003-12-10 2008-06-17 International Business Machines Corporation Sectional field effect devices
US7105390B2 (en) 2003-12-30 2006-09-12 Intel Corporation Nonplanar transistors with metal gate electrodes
US7247912B2 (en) * 2004-01-05 2007-07-24 International Business Machines Corporation Structures and methods for making strained MOSFETs
US7705345B2 (en) * 2004-01-07 2010-04-27 International Business Machines Corporation High performance strained silicon FinFETs device and method for forming same
US6936516B1 (en) * 2004-01-12 2005-08-30 Advanced Micro Devices, Inc. Replacement gate strained silicon finFET process
US7385247B2 (en) * 2004-01-17 2008-06-10 Samsung Electronics Co., Ltd. At least penta-sided-channel type of FinFET transistor
KR100781538B1 (ko) * 2004-02-07 2007-12-03 삼성전자주식회사 성능이 향상된 멀티 게이트 트랜지스터용 액티브 구조의제조 방법, 이에 의해 제조된 액티브 구조 및 멀티 게이트트랜지스터
US7154118B2 (en) 2004-03-31 2006-12-26 Intel Corporation Bulk non-planar transistor having strained enhanced mobility and methods of fabrication
KR100625175B1 (ko) * 2004-05-25 2006-09-20 삼성전자주식회사 채널층을 갖는 반도체 장치 및 이를 제조하는 방법
US7579280B2 (en) 2004-06-01 2009-08-25 Intel Corporation Method of patterning a film
US7452778B2 (en) * 2004-06-10 2008-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor nano-wire devices and methods of fabrication
US7084461B2 (en) * 2004-06-11 2006-08-01 International Business Machines Corporation Back gate FinFET SRAM
US7042009B2 (en) 2004-06-30 2006-05-09 Intel Corporation High mobility tri-gate devices and methods of fabrication
US6951784B1 (en) * 2004-08-05 2005-10-04 International Business Machines Corporation Three-mask method of constructing the final hard mask used for etching the silicon fins for FinFETs
US7348284B2 (en) 2004-08-10 2008-03-25 Intel Corporation Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow
DE102005045078B4 (de) * 2004-09-25 2009-01-22 Samsung Electronics Co., Ltd., Suwon Feldeffekttransistor mit einer verspannten Kanalschicht an Seitenwänden einer Struktur an einem Halbleitersubstrat
KR100674914B1 (ko) * 2004-09-25 2007-01-26 삼성전자주식회사 변형된 채널층을 갖는 모스 트랜지스터 및 그 제조방법
US7422946B2 (en) 2004-09-29 2008-09-09 Intel Corporation Independently accessed double-gate and tri-gate transistors in same process flow
US7332439B2 (en) 2004-09-29 2008-02-19 Intel Corporation Metal gate transistors with epitaxial source and drain regions
US7361958B2 (en) * 2004-09-30 2008-04-22 Intel Corporation Nonplanar transistors with metal gate electrodes
US7611943B2 (en) * 2004-10-20 2009-11-03 Texas Instruments Incorporated Transistors, integrated circuits, systems, and processes of manufacture with improved work function modulation
US20060086977A1 (en) 2004-10-25 2006-04-27 Uday Shah Nonplanar device with thinned lower body portion and method of fabrication
KR100652381B1 (ko) * 2004-10-28 2006-12-01 삼성전자주식회사 다수의 나노 와이어 채널을 구비한 멀티 브릿지 채널 전계효과 트랜지스터 및 그 제조방법
CN100392859C (zh) * 2004-11-03 2008-06-04 中国科学院微电子研究所 一种鱼脊形场效应晶体管的结构和制备方法
JP2006135067A (ja) * 2004-11-05 2006-05-25 Toshiba Corp 半導体装置およびその製造方法
US20060113603A1 (en) * 2004-12-01 2006-06-01 Amberwave Systems Corporation Hybrid semiconductor-on-insulator structures and related methods
US7393733B2 (en) 2004-12-01 2008-07-01 Amberwave Systems Corporation Methods of forming hybrid fin field-effect transistor structures
KR100630723B1 (ko) * 2004-12-06 2006-10-02 삼성전자주식회사 다중가교채널을 가진 반도체 소자 및 그 제조방법
US7193279B2 (en) * 2005-01-18 2007-03-20 Intel Corporation Non-planar MOS structure with a strained channel region
WO2006087798A1 (ja) 2005-02-18 2006-08-24 Fujitsu Limited 記憶素子マトリックス、その記憶素子マトリックスの製造方法、及び、その記憶素子マトリックスを用いた半導体回路装置
JP4369379B2 (ja) * 2005-02-18 2009-11-18 富士通マイクロエレクトロニクス株式会社 半導体装置
US7518196B2 (en) 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
JP4367357B2 (ja) * 2005-02-28 2009-11-18 セイコーエプソン株式会社 半導体装置の製造方法
US20060197129A1 (en) * 2005-03-03 2006-09-07 Triquint Semiconductor, Inc. Buried and bulk channel finFET and method of making the same
US20060202266A1 (en) 2005-03-14 2006-09-14 Marko Radosavljevic Field effect transistor with metal source/drain regions
US8324660B2 (en) 2005-05-17 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US9153645B2 (en) 2005-05-17 2015-10-06 Taiwan Semiconductor Manufacturing Company, Ltd. Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
US8110863B2 (en) * 2005-06-01 2012-02-07 Sandisk 3D Llc TFT charge storage memory cell having high-mobility corrugated channel
JP4648096B2 (ja) * 2005-06-03 2011-03-09 株式会社東芝 半導体装置の製造方法
WO2006132172A1 (ja) * 2005-06-07 2006-12-14 Nec Corporation フィン型電界効果型トランジスタ、半導体装置及びその製造方法
US7858481B2 (en) 2005-06-15 2010-12-28 Intel Corporation Method for fabricating transistor with thinned channel
US7547637B2 (en) 2005-06-21 2009-06-16 Intel Corporation Methods for patterning a semiconductor film
US7902598B2 (en) 2005-06-24 2011-03-08 Micron Technology, Inc. Two-sided surround access transistor for a 4.5F2 DRAM cell
US7279375B2 (en) 2005-06-30 2007-10-09 Intel Corporation Block contact architectures for nanoscale channel transistors
US7375394B2 (en) * 2005-07-06 2008-05-20 Applied Intellectual Properties Co., Ltd. Fringing field induced localized charge trapping memory
US7402875B2 (en) 2005-08-17 2008-07-22 Intel Corporation Lateral undercut of metal gate in SOI device
US7696567B2 (en) 2005-08-31 2010-04-13 Micron Technology, Inc Semiconductor memory device
US7400031B2 (en) * 2005-09-19 2008-07-15 International Business Machines Corporation Asymmetrically stressed CMOS FinFET
US7479421B2 (en) 2005-09-28 2009-01-20 Intel Corporation Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby
US20070090416A1 (en) 2005-09-28 2007-04-26 Doyle Brian S CMOS devices with a single work function gate electrode and method of fabrication
US7947546B2 (en) * 2005-10-31 2011-05-24 Chartered Semiconductor Manufacturing, Ltd. Implant damage control by in-situ C doping during SiGe epitaxy for device applications
US7348638B2 (en) * 2005-11-14 2008-03-25 International Business Machines Corporation Rotational shear stress for charge carrier mobility modification
US7485503B2 (en) 2005-11-30 2009-02-03 Intel Corporation Dielectric interface for group III-V semiconductor device
US7402856B2 (en) * 2005-12-09 2008-07-22 Intel Corporation Non-planar microelectronic device having isolation element to mitigate fringe effects and method to fabricate same
US7439588B2 (en) * 2005-12-13 2008-10-21 Intel Corporation Tri-gate integration with embedded floating body memory cell using a high-K dual metal gate
US7512017B2 (en) * 2005-12-21 2009-03-31 Intel Corporation Integration of planar and tri-gate devices on the same substrate
US7525160B2 (en) 2005-12-27 2009-04-28 Intel Corporation Multigate device with recessed strain regions
US7396711B2 (en) 2005-12-27 2008-07-08 Intel Corporation Method of fabricating a multi-cornered film
US20070148926A1 (en) * 2005-12-28 2007-06-28 Intel Corporation Dual halo implant for improving short channel effect in three-dimensional tri-gate transistors
US20070152266A1 (en) * 2005-12-29 2007-07-05 Intel Corporation Method and structure for reducing the external resistance of a three-dimensional transistor through use of epitaxial layers
KR100719180B1 (ko) * 2006-02-28 2007-05-17 주식회사 하이닉스반도체 새들형트랜지스터와 핀형트랜지스터를 동시에 구비하는메모리소자 및 그의 제조 방법
WO2007112066A2 (en) 2006-03-24 2007-10-04 Amberwave Systems Corporation Lattice-mismatched semiconductor structures and related methods for device fabrication
US20070235763A1 (en) * 2006-03-29 2007-10-11 Doyle Brian S Substrate band gap engineered multi-gate pMOS devices
US7407847B2 (en) * 2006-03-31 2008-08-05 Intel Corporation Stacked multi-gate transistor design and method of fabrication
US7449373B2 (en) 2006-03-31 2008-11-11 Intel Corporation Method of ion implanting for tri-gate devices
US7425500B2 (en) 2006-03-31 2008-09-16 Intel Corporation Uniform silicide metal on epitaxially grown source and drain regions of three-dimensional transistors
US8143646B2 (en) 2006-08-02 2012-03-27 Intel Corporation Stacking fault and twin blocking barrier for integrating III-V on Si
EP2062290B1 (en) 2006-09-07 2019-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction using aspect ratio trapping
US7435683B2 (en) * 2006-09-15 2008-10-14 Intel Corporation Apparatus and method for selectively recessing spacers on multi-gate devices
US20080097346A1 (en) * 2006-09-19 2008-04-24 Alcon, Inc. Trocar cannula
US7700470B2 (en) 2006-09-22 2010-04-20 Intel Corporation Selective anisotropic wet etching of workfunction metal for semiconductor devices
US7875958B2 (en) 2006-09-27 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
WO2008039495A1 (en) 2006-09-27 2008-04-03 Amberwave Systems Corporation Tri-gate field-effect transistors formed by aspect ratio trapping
CN100539153C (zh) * 2006-10-02 2009-09-09 台湾积体电路制造股份有限公司 半导体结构及存储单元
WO2008051503A2 (en) 2006-10-19 2008-05-02 Amberwave Systems Corporation Light-emitter-based devices with lattice-mismatched semiconductor structures
US8368144B2 (en) * 2006-12-18 2013-02-05 Infineon Technologies Ag Isolated multigate FET circuit blocks with different ground potentials
US20080157225A1 (en) * 2006-12-29 2008-07-03 Suman Datta SRAM and logic transistors with variable height multi-gate transistor architecture
US7538391B2 (en) * 2007-01-09 2009-05-26 International Business Machines Corporation Curved FINFETs
US20080173942A1 (en) * 2007-01-22 2008-07-24 International Business Machines Corporation STRUCTURE AND METHOD OF MANUFACTURING A STRAINED FinFET WITH STRESSED SILICIDE
DE102007008562A1 (de) * 2007-02-21 2008-08-28 Qimonda Ag Feldeffekttransistor-Anordnung
US7821061B2 (en) 2007-03-29 2010-10-26 Intel Corporation Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applications
US8304805B2 (en) 2009-01-09 2012-11-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
US7825328B2 (en) 2007-04-09 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Nitride-based multi-junction solar cell modules and methods for making the same
US9508890B2 (en) 2007-04-09 2016-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. Photovoltaics on silicon
US8237151B2 (en) 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8329541B2 (en) 2007-06-15 2012-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. InP-based transistor fabrication
KR101361129B1 (ko) * 2007-07-03 2014-02-13 삼성전자주식회사 발광소자 및 그 제조방법
JP2010538495A (ja) 2007-09-07 2010-12-09 アンバーウェーブ・システムズ・コーポレーション 多接合太陽電池
US7671418B2 (en) * 2007-09-14 2010-03-02 Advanced Micro Devices, Inc. Double layer stress for multiple gate transistors
EP2070533B1 (en) * 2007-12-11 2014-05-07 Apoteknos Para La Piel, s.l. Use of a compound derived from P-hydroxyphenyl propionic acid for the treatment of psoriasis
US8183667B2 (en) 2008-06-03 2012-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial growth of crystalline material
US8362566B2 (en) 2008-06-23 2013-01-29 Intel Corporation Stress in trigate devices using complimentary gate fill materials
US8274097B2 (en) 2008-07-01 2012-09-25 Taiwan Semiconductor Manufacturing Company, Ltd. Reduction of edge effects from aspect ratio trapping
US8981427B2 (en) 2008-07-15 2015-03-17 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing of small composite semiconductor materials
US20100072515A1 (en) 2008-09-19 2010-03-25 Amberwave Systems Corporation Fabrication and structures of crystalline material
CN102160145B (zh) 2008-09-19 2013-08-21 台湾积体电路制造股份有限公司 通过外延层过成长的元件形成
US8253211B2 (en) 2008-09-24 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor sensor structures with reduced dislocation defect densities
US20100155801A1 (en) * 2008-12-22 2010-06-24 Doyle Brian S Integrated circuit, 1T-1C embedded memory cell containing same, and method of manufacturing 1T-1C memory cell for embedded memory application
US7999298B2 (en) * 2008-12-30 2011-08-16 Intel Corporation Embedded memory cell and method of manufacturing same
CN102379046B (zh) 2009-04-02 2015-06-17 台湾积体电路制造股份有限公司 从晶体材料的非极性平面形成的器件及其制作方法
US8440517B2 (en) * 2010-10-13 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET and method of fabricating the same
US8283653B2 (en) 2009-12-23 2012-10-09 Intel Corporation Non-planar germanium quantum well devices
US8796759B2 (en) 2010-07-15 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Fin-like field effect transistor (FinFET) device and method of manufacturing same
EP2477216A1 (en) * 2011-01-13 2012-07-18 Soitec Hybrid bulk/SOI device with a buried doped layer and manufacturing method thereof
US8852998B1 (en) * 2011-08-30 2014-10-07 Sandia Corporation Method to fabricate micro and nano diamond devices
US9040399B2 (en) * 2011-10-27 2015-05-26 International Business Machines Corporation Threshold voltage adjustment for thin body MOSFETs
CN103137671B (zh) * 2011-12-02 2015-06-24 中芯国际集成电路制造(上海)有限公司 多栅极场效应晶体管及其制作方法
US8796695B2 (en) 2012-06-22 2014-08-05 United Microelectronics Corp. Multi-gate field-effect transistor and process thereof
US9947773B2 (en) * 2012-08-24 2018-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor arrangement with substrate isolation
CN103219384B (zh) * 2013-04-03 2015-05-20 北京大学 一种抗单粒子辐射的多栅器件及其制备方法
CN104183488A (zh) * 2013-05-21 2014-12-03 中芯国际集成电路制造(上海)有限公司 一种FinFET半导体器件及其制备方法
US9000498B2 (en) * 2013-06-28 2015-04-07 Stmicroelectronics, Inc. FinFET with multiple concentration percentages
KR101462430B1 (ko) * 2013-07-18 2014-11-18 경북대학교 산학협력단 반도체 소자의 제조 방법
KR102135306B1 (ko) * 2013-09-27 2020-07-17 인텔 코포레이션 최대화된 컴플라이언스 및 자유 표면 완화를 갖는 Ge 및 III-V족 채널 반도체 소자들
WO2015047341A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Non-planar semiconductor devices having multi-layered compliant substrates
US9847448B2 (en) * 2013-09-27 2017-12-19 Intel Corporation Forming LED structures on silicon fins
US9391171B2 (en) 2014-01-24 2016-07-12 International Business Machines Corporation Fin field effect transistor including a strained epitaxial semiconductor shell
CN104022152B (zh) * 2014-06-04 2017-03-01 重庆大学 带有压应变薄膜应变源的双栅p沟道MOSFET及制备方法
CN105280496B (zh) 2014-06-05 2019-06-11 联华电子股份有限公司 具有鳍状结构的半导体元件及其制作方法
US9178068B1 (en) 2014-06-05 2015-11-03 International Business Machines Corporation FinFET with oxidation-induced stress
US9502565B2 (en) 2014-06-27 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Channel strain control for nonplanar compound semiconductor devices
US9306067B2 (en) 2014-08-05 2016-04-05 Taiwan Semiconductor Manufacturing Company, Ltd. Nonplanar device and strain-generating channel dielectric
US9941406B2 (en) 2014-08-05 2018-04-10 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs with source/drain cladding
CN105529241A (zh) * 2014-09-29 2016-04-27 中芯国际集成电路制造(上海)有限公司 半导体结构及其形成方法
KR102255174B1 (ko) 2014-10-10 2021-05-24 삼성전자주식회사 활성 영역을 갖는 반도체 소자 및 그 형성 방법
US9577101B2 (en) 2015-03-13 2017-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain regions for fin field effect transistors and methods of forming same
US9496259B2 (en) 2015-04-14 2016-11-15 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET semiconductor device having fins with stronger structural strength
US9583626B2 (en) 2015-04-29 2017-02-28 International Business Machines Corporation Silicon germanium alloy fins with reduced defects
US10079302B2 (en) 2015-12-28 2018-09-18 International Business Machines Corporation Silicon germanium fin immune to epitaxy defect
FR3053834B1 (fr) * 2016-07-05 2020-06-12 Stmicroelectronics Sa Structure de transistor
CN109920846B (zh) * 2019-03-11 2023-11-03 长江存储科技有限责任公司 晶体管及其形成方法、存储器
KR102796255B1 (ko) 2020-04-22 2025-04-17 삼성디스플레이 주식회사 디스플레이 장치
CN111509048A (zh) * 2020-04-28 2020-08-07 上海华力集成电路制造有限公司 N型鳍式晶体管及其制造方法
KR20250125638A (ko) * 2024-02-15 2025-08-22 주식회사 웨이버사시스템즈 집적회로 웨이퍼, 집적회로 기판 및 집적회로 전자가속화 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211128A (ja) * 1991-09-18 1993-08-20 Commiss Energ Atom 薄い半導体材料フィルムの製造方法
JP2003243667A (ja) * 2002-02-22 2003-08-29 Toshiba Corp 半導体装置、半導体装置の製造方法、半導体基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5461250A (en) * 1992-08-10 1995-10-24 International Business Machines Corporation SiGe thin film or SOI MOSFET and method for making the same
JP2002043576A (ja) * 2000-07-24 2002-02-08 Univ Tohoku 半導体装置
US6562665B1 (en) * 2000-10-16 2003-05-13 Advanced Micro Devices, Inc. Fabrication of a field effect transistor with a recess in a semiconductor pillar in SOI technology
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6475869B1 (en) * 2001-02-26 2002-11-05 Advanced Micro Devices, Inc. Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6611029B1 (en) * 2002-11-08 2003-08-26 Advanced Micro Devices, Inc. Double gate semiconductor device having separate gates

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05211128A (ja) * 1991-09-18 1993-08-20 Commiss Energ Atom 薄い半導体材料フィルムの製造方法
JP2003243667A (ja) * 2002-02-22 2003-08-29 Toshiba Corp 半導体装置、半導体装置の製造方法、半導体基板の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011103487A (ja) * 2003-03-17 2011-05-26 Samsung Electronics Co Ltd 半導体素子及びトランジスタ
JP2014220522A (ja) * 2003-03-17 2014-11-20 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 半導体素子
JP2005051241A (ja) * 2003-07-25 2005-02-24 Interuniv Micro Electronica Centrum Vzw 多層ゲート半導体デバイス及びその製造方法
US7867856B2 (en) 2006-07-26 2011-01-11 Elpida Memory, Inc. Method of manufacturing a semiconductor device having fin-field effect transistor
JP2011505697A (ja) * 2007-11-30 2011-02-24 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド ヘテロ構造逆ｔ字電界効果トランジスタ

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