JP2006352137A5 - - Google Patents
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- Publication number
- JP2006352137A5 JP2006352137A5 JP2006166127A JP2006166127A JP2006352137A5 JP 2006352137 A5 JP2006352137 A5 JP 2006352137A5 JP 2006166127 A JP2006166127 A JP 2006166127A JP 2006166127 A JP2006166127 A JP 2006166127A JP 2006352137 A5 JP2006352137 A5 JP 2006352137A5
- Authority
- JP
- Japan
- Prior art keywords
- interlayer insulating
- insulating film
- semiconductor device
- lower metal
- cell array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002184 metal Substances 0.000 claims 60
- 239000004065 semiconductor Substances 0.000 claims 38
- 239000011229 interlayer Substances 0.000 claims 35
- 239000010410 layer Substances 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 12
- 230000002093 peripheral effect Effects 0.000 claims 9
- 238000002161 passivation Methods 0.000 claims 4
- 230000000149 penetrating effect Effects 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050052654A KR100653715B1 (ko) | 2005-06-17 | 2005-06-17 | 적어도 하나의 개구부를 갖는 최상부 금속층을 구비하는반도체 소자들 및 그 제조방법들 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006352137A JP2006352137A (ja) | 2006-12-28 |
| JP2006352137A5 true JP2006352137A5 (enExample) | 2009-07-30 |
Family
ID=37572551
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006166127A Pending JP2006352137A (ja) | 2005-06-17 | 2006-06-15 | 少なくとも１つの開口部を有する最上部金属層を備える半導体素子及びその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7795731B2 (enExample) |
| JP (1) | JP2006352137A (enExample) |
| KR (1) | KR100653715B1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008108761A (ja) * | 2006-10-23 | 2008-05-08 | Elpida Memory Inc | ダイナミックランダムアクセスメモリの製造方法 |
| KR101356425B1 (ko) * | 2007-09-20 | 2014-01-28 | 삼성전자주식회사 | 모스 트랜지스터의 열화도 추정 방법 및 회로 특성 열화도추정 방법 |
| KR101412144B1 (ko) * | 2007-11-26 | 2014-06-26 | 삼성전자 주식회사 | 금속 배선의 제조 방법 및 이를 이용한 이미지 센서의 제조방법 |
| KR20120118323A (ko) * | 2011-04-18 | 2012-10-26 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
| US10056363B2 (en) * | 2015-11-10 | 2018-08-21 | Marvell World Trade Ltd. | Methods and systems to improve yield in multiple chips integration processes |
| KR102899930B1 (ko) | 2021-07-28 | 2025-12-15 | 삼성전자주식회사 | 반도체 소자 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5745259A (en) * | 1980-09-01 | 1982-03-15 | Hitachi Ltd | Resin sealing type semiconductor device |
| US5229642A (en) | 1980-09-01 | 1993-07-20 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
| US5371411A (en) * | 1980-09-01 | 1994-12-06 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
| US5552639A (en) * | 1980-09-01 | 1996-09-03 | Hitachi, Ltd. | Resin molded type semiconductor device having a conductor film |
| US5508540A (en) | 1993-02-19 | 1996-04-16 | Hitachi, Ltd. | Semiconductor integrated circuit device and process of manufacturing the same |
| JPH0817820A (ja) | 1994-06-28 | 1996-01-19 | Hitachi Ltd | 半導体集積回路装置 |
| JP3631549B2 (ja) * | 1995-05-25 | 2005-03-23 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
| JP2967745B2 (ja) * | 1997-02-06 | 1999-10-25 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP3638778B2 (ja) * | 1997-03-31 | 2005-04-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置およびその製造方法 |
| JP3144367B2 (ja) * | 1997-12-19 | 2001-03-12 | 日本電気株式会社 | Ｃｏｂ型ｄｒａｍ半導体装置及びその製造方法 |
| JP4322347B2 (ja) * | 1999-03-15 | 2009-08-26 | エルピーダメモリ株式会社 | 半導体装置およびその製造方法 |
| JP2001308181A (ja) * | 2000-04-27 | 2001-11-02 | Nec Corp | 半導体装置とその製造方法 |
| JP4439082B2 (ja) * | 2000-06-05 | 2010-03-24 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
| KR100410990B1 (ko) | 2001-02-20 | 2003-12-18 | 삼성전자주식회사 | 다층배선을 갖는 반도체 장치 및 그의 제조방법 |
| JP4260405B2 (ja) * | 2002-02-08 | 2009-04-30 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
| JP2004153037A (ja) * | 2002-10-31 | 2004-05-27 | Renesas Technology Corp | 半導体装置の製造方法 |
| JP2004311787A (ja) | 2003-04-08 | 2004-11-04 | Sharp Corp | 半導体装置 |
| KR20050001098A (ko) * | 2003-06-27 | 2005-01-06 | 주식회사 하이닉스반도체 | 반도체 소자의 보호막 제조 방법 |
-
2005
- 2005-06-17 KR KR1020050052654A patent/KR100653715B1/ko not_active Expired - Fee Related
-
2006
- 2006-03-31 US US11/395,047 patent/US7795731B2/en active Active
- 2006-06-15 JP JP2006166127A patent/JP2006352137A/ja active Pending
-
2010
- 2010-08-13 US US12/855,870 patent/US8501617B2/en active Active
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